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The experimental demonstration of a p-type 2D WSe2transistor with a ferroelectric perovskite BaTiO3gate oxide is presented. The 30 nm thick BaTiO3gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm2and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe2/BaTiO3stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO3and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.

This article reports a comprehensive statistical analysis of uncooled infrared (IR) detectors based on radio frequency (RF) aluminum nitride (AlN) contour mode resonators (CMRs) integrated with spectrally selective IR metasurfaces. Moreover, it reports the lowest noise equivalent power (NEP) recorded from these types of devices ( $\sim $ 11 pW $/\sqrt {\text {Hz}}$ ). The metasurfaces are printed on top of the AlN resonator body to decouple mechanical, RF, and IR responses. Optical lithography is used to pattern the metasurfaces, allowing the fabrication of hundreds of spectrally selective IR detectors with different sensing performances within the same chip. An automated characterization system is employed to quickly record parameters such as quality factor, noise, and responsivity. This approach allows to experimentally determine the geometrical dimensions of quasi-optimal IR detectors that exhibit NEP in the pW $/\sqrt {\text {Hz}}$ range and responsivities in the Hz/nW range. Additionally, the detector performance versus IR light is explored using different interrogation mechanisms, namely monitoring the CMR resonance frequency as well as the amplitude and phase of an RF signal that excites the device at resonance. The statistical analysis of hundreds of IR sensors reveals trends between parameters such quality factor and noise floor, and NEP and responsivity. These trends provide useful guidelines for the development of quasi-optimal spectrally selective IR sensors operating at room temperature.