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Abdullahi Yusuf Ali,1 Ahmet Biyikli,1 Abdishakur Mohamed Abdi,1 Ilkay Guler2 1Department of Pediatric Surgery, Somalia Turkish Training and Research Hospital, Mogadishu, Somalia; 2General Directorate of Public Hospitals, Ministry of Health of Republic of Turkiye, Ankara, TurkeyCorrespondence: Abdullahi Yusuf Ali, Tel +252615474485, Email abdullahiped@gmail.comAbstract: The infantile intestinal obstruction associated with situs inversus totalis and polysplenia is extremely rare, with only a few cases reported in the literature. Furthermore, the management of this association is complicated. We report a case of a 2-month-old boy with intestinal obstruction due to malrotation and volvulus with thin translucent omentum sac encasing the small intestine associated with situs inversus totalis, polysplenia, and pulmonary hypertension. To the best of our knowledge, this is the first case of situs inversus totalis with polysplenia, pulmonary hypertension, and intestinal obstruction due to malrotation and volvulus with thin translucent omentum sac encasing the small intestine.Keywords: situs inversus, polysplenia, dextrocardia, malrotation, midgut volvulus

A 46 year-old female patient presented to the hospital with ongoing and progressively increasing fatigue, severe nausea and vomiting, loss of appetite, constipation, palpitations and somnolence. Laboratory evaluation revealed a severe hypercalcaemia and overt hyperthyroidism. She was diagnosed with primary hyperparathyroidism accompanied by Graves’ disease. The patient underwent total thyroidectomy and right inferior parathyroid gland adenoma excision on the 24th day of her admission to the hospital after calcium levels and free thyroid hormone levels were brought to normal ranges. We suggest that a possibility of simultaneous thyrotoxicosis and primary hyperparathyroidism in cases presenting with a hypercalcaemic crisis should be considered

In this study, linear and nonlinear optical characteristics of NaBi(Mo0.5W0.5O4)2 crystal, a new material that may have potential for optoelectronic applications, were investigated. NaBi(Mo0.5W0.5O4)2 single crystals were grown via the Czochralski method. Two sharp and well-defined peaks were observed in the x-ray diffraction pattern. These peaks were associated with tetragonal crystal structure. The data obtained from ellipsometer measurements was matched with a suitable optical model. This allowed for the presentation of the spectral dependence of various optical parameters like refractive index, dielectric constant, optical conductivity, extinction, and absorption coefficients in the range of 1.2–5.0 eV. As a result of studying the spectral dependence of the absorption coefficient under Tauc relationship, bandgap energy of the compound was found to be 3.20 eV. Using the spectral dependence of the dielectric function, the existence of two critical points with energy values of 3.72 and 4.44 eV was revealed. The change of the refractive index in the region under the bandgap was studied using the single oscillator model. Single oscillator and dispersion energies were determined from the analysis results. Nonlinear optical parameters of NaBi(Mo0.5W0.5O4)2 crystal were also determined. With this study, the optical properties of the NaBi(Mo0.5W0.5O4)2 are presented in more detail and valuable information is presented for the potential use of the material in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The compound NaBi(MoO4)2 has garnered significant interest in optoelectronic fields. This study employs spectroscopic ellipsometry to thoroughly examine the linear and nonlinear optical characteristics of NaBi(MoO4)2 crystals, offering detailed insights into their optical behavior. Our investigation presents a precise method for discerning the crystal's spectral features, revealing the spectral variations of key optical parameters such as refractive index, extinction coefficient, dielectric function, and absorption coefficient within the 1.2-5.0 eV range. Through analysis, we determined optical attributes including bandgap energy, critical point energy, and single oscillator parameters. Additionally, we explored the nonlinear optical properties of NaBi(MoO4)2, unveiling potential applications such as optoelectronic devices, frequency conversion, and optical sensors. This study enhances comprehension of optical properties of NaBi(MoO4)2, underscoring its significance in future optical and electronic advancements. [ABSTRACT FROM AUTHOR]

Double tungstates (DT) and double molybdates (DM) have significant importance because of their optoelectronic applications. Regarding the importance of DT and DM, we investigated experimentally structural and optical properties of (Na0.5Bi0.5)(Mo1−xWx)O4 (x = 0.25) crystal that belongs to the NaBi-DT and DM crystals group. Czochralski method was used to grow the single crystals. The structure of the crystal was identified using X-ray diffraction (XRD) measurements. Two sharp peaks associated with tetragonal crystal structure appeared in the pattern. Vibrational modes of the studied crystal were obtained from the Raman experiments. By the help of the Fourier transform infrared spectrophotometer (FTIR) measurements, infrared transmittance spectrum of the studied compound was recorded. Band gap energy wase found around 3.04 eV using two methods, Tauc and derivative analysis, based on transmission spectrum. Based on the analysis of absorption coefficient, Urbach energy was obtained as 0.22 eV. The revealed structural and optical properties of the crystal indicated that the material may be a candidate for optoelectronic devices in which NaBi(MoO4)2 and NaBi(WO4)2 materials are utilized. [ABSTRACT FROM AUTHOR]

TlInSSe [(TlInS2)0.5(TlInSe2)0.5] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25–6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals. [ABSTRACT FROM AUTHOR]

The optical properties of TlIn(S0.25Se0.75)2 crystals were studied by ellipsometry measurements. X-ray diffraction pattern presented well-defined peaks associated with monoclinic structure. Energy dependent graphs of various linear optical parameters of the crystal were presented in the 1.25–4.50 eV range. The band gap and Urbach energies of the compound were found as 1.96 and 0.68 eV, respectively, from the analyses of the absorption coefficient. Refractive index spectrum was analyzed considering the single-effective-oscillator model to get oscillator and dispersion energies, zero and high frequency dielectric constants, plasma frequency. Moreover, the nonlinear refractive index, first-order and third-order nonlinear susceptibilities of TlIn(S0.25Se0.75)2 crystal were revealed in the present paper. [ABSTRACT FROM AUTHOR]

Layered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)0.75(TlInSe2)0.25] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV. [ABSTRACT FROM AUTHOR]