Search

A submillisecond response, wide view and single-cell-gap transflective (TR) display employing a blue-phase liquid crystal is proposed. The device employs polar opposite in-plane switching (IPS) electrodes. To balance the optical phase retardation between transmissive (T) and reflective (R) regions, the IPS electrodes are formed with unequal gaps in the two regions. This display exhibits reasonably high optical efficiency and well-matched voltage-dependent transmittance and reflectance curves.

A polarisation-independent blue-phase liquid crystal lens array using gradient electrodes is proposed. A high dielectric constant layer helps to smoothen out the horizontal electric field a...

A blue phase liquid crystal (BPLC) lens with multifunction using multi-electrode structure and a dielectric layer with high dielectric constant is proposed. The refractive index of the BPLC can be changed flexibly in different regions. Some functional or technical requirements such as switch between positive and negative lenses can be achieved. The lens reveals a good parabolic refractive index distribution and focus adjustment capacity simultaneously. The applied voltage on the electrodes is regular and computable. To decrease the applied voltage of the proposed lens with a large diameter, a drive-type adopted Fresnel lens is introduced.

A single-cell-gap transflective polymer-stabilised blue-phase liquid crystal display with opposite polar pixel electrodes on an etched substrate is proposed. In the proposed structure, the space between common electrodes is adopted as transmissive region, and the space above the common electrode is adopted as reflective region. By optimising the electrode parameters of the transmissive and reflective regions, well-matched voltage-dependent transmittance and reflectance curves can be obtained. In addition, the device has good performances of low operating voltage (~3.2 V), high optical efficiency and a wide viewing angle.

A transflective polymer-stabilised blue-phase liquid crystal display (BP-LCD) with alternate electrodes is proposed. The alternate electrodes are composed of right triangle electrodes and slanted e...

The concept of “phonon-liquid electron-crystal” (PLEC) have attracted many researchers for thermoelectric materials. In this study, a series of Ag-doped β-Cu2Se films were prepared on single crystalline Si(111) substrate by magnetron sputtering and the influence of Ag doping on the phase composition, chemical component and thermoelectric performance of the deposited β-Cu2Se films were studied. An energy dispersive spectrometer (EDS) showed that the Cu-rich β-Cu2Se films in which the ratio of Cu to Se in β-Cu2Se lattice varied from 3.59 to 4.96 as Ag atomic percent content increased from 0 to 2.97 were obtained. The Ag existed in the form of CuAgSe phase which increased electrical resistivity and Seebeck coefficient. The phase transition from α to β phase of Cu2Se only took place at ~60 °C. The variation of electrical resistivity with Ag content relied on the combined action of the amounts of CuAgSe phase and the ratio of Cu to Se in β-Cu2Se lattice of deposited films. The power factor of 1.37 at% Ag samples at whole measured temperature was the highest in all samples due to high Seebeck coefficient. It was attributed to lower resistivity than that of bulk Ag-doped β-Cu2Se materials of references that the power factor of our deposited films reached the order of mW.m−1K−2.

To avoid the uncontrollable Mg content in deposited films caused by the easy evaporation of Mg in alloy target, the Mg2(Sn,Si,Bi) solid solutions films with a tiny of excess Mg metal phase were prepared using a Mg-Sn-Si-Bi alloy target and a high pure Mg target by magnetron sputtering alternately. The phase components, microstructures as well as the thermoelectric properties were systematically investigated. The excess metal Mg phase with a few micron size uniformly distributes in the Mg2(Sn,Si,Bi) solid solution films and the size of the excess metal Mg phase becomes bigger and bigger and the phase gradually convert a narrow strip shape as Mg target sputtering time increase from 40 to 60 s. It is beneficial to an increase in both Seebeck coefficient and electrical conductivity that a tiny excess metal Mg phase exists in Mg2(Sn,Si) based films. The Mg2(Sn,Si) based films containing tiny excess metal Mg phase with an appropriate size posses the highest absolute value of Seebeck coefficient and appropriate electrical conductivity, resulting in the maximum power factor.