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We model a spin-phase transition in a two-dimensional square array, or a lateral superlattice, of quantum rings in an external perpendicular homogeneous magnetic field. The electron system is placed in a circular cylindrical far-infrared photon cavity with a single circularly symmetric photon mode. Our numerical results reveal that the spin ordering of the two-dimensional electron gas in each quantum ring can be influenced or controlled by the electron-photon coupling strength and the energy of the photons. The Coulomb interaction between the electrons is described by a spin-density functional approach, but the para- and the diamagnetic electron-photon interactions are modeled via a configuration interaction formalism in a truncated many-body Fock-space, which is updated in each iteration step of the density functional approach. In the absence of external electromagnetic pulses this spin-phase transition is replicated in the orbital magnetization of the rings. The spin-phase transition can be suppressed by a strong electron-photon interaction. In addition, fluctuations in the spin configuration are found in dynamical calculations, where the system is excited by a time-dependent scheme specially fit for emphasizing the diamagnetic electron-photon interaction., Comment: RevTeX - pdfLaTeX, 11 pages with 9 included pdf figures

The equilibrium properties and interminiband transitions for Hartree-interacting two-dimensional electron gas in a one-dimensional chain of planar quantum rings subjected to a transverse homogeneous magnetic field are examined theoretically and numerically. The proposed analytical models for the external modulation potential and the basis wave-function reflect the symmetry and the topology of the system allowing to get high accuracy results in comparatively short computational times. The calculated dependencies of the electronic band structure versus magnetic field show two detached minibands in the region of low energies, while higher minibands manifest multiple crossings and anticrossings. The existence of highly degenerate energy levels (referred to as miniband nodes) for certain values of magnetic field is revealed. The miniband nodes are preserved when taking into account the Coulomb interaction of the electrons. The interaction leads to an up-shift and a broadening of the minibands, as well as to a shift of the nodes toward the larger values of the magnetic field. The miniband nodes have their signature in the magnetization of the electron gas and in the interminiband transitions. The number of electrons per a unite cell of the system has a strong impact on the current density distribution, magnetization and the oscillator strength. The obtained results open new opportunities for a flexible manipulation of magneto-optical properties of future devices operating in far-infrared and THz regimes.

We employ a ``real-time'' excitation scheme to calculate the excitation spectra of a two-dimensional electron system in a square array of quantum dots placed in a circular cylindrical far-infrared photon cavity subjected to a perpendicular homogeneous external magnetic field. The Coulomb interaction of the electrons is handled via spin density functional theory and the para- and the diamagnetic parts of the electron-photon coupling are updated according to a configuration interaction method in each iteration of the density functional calculation. The results show that an excitation scheme built on using the symmetry of the lateral square superlattice of the dots and the cylindrical cavity produces both para- and diamagnetic resonance peaks with oscillator strengths that can be steered by the excitation pulse parameters. The excitation method breaks the conditions for the generalized Kohn theorem and allows for insight into the subband structure of the electron system and can be used both in and outside the linear response regime., Comment: RevTeX - pdfLaTeX, 14 pages with 15 included pdf and png figures

We model the equilibrium properties of a two-dimensional electron gas in a square lateral superlattice of quantum dots in a GaAs heterostructure subject to an external homogeneous perpendicular magnetic field and a far-infrared circular cylindrical photon cavity with one quantized mode, the TE011 mode. In a truncated linear basis constructed by a tensor product of the single-electron states of the noninteracting system and the eigenstates of the photon number operator, a local spin density approximation of density functional theory is used to compute the electron-photon states of the two-dimensional electron gas in the cavity. The common spatial symmetry of the vector fields for the external magnetic field and the cavity photon field in the long wavelength approximation enhances higher order magnetic single- and multi-photon processes for both the para- and the diamagnetic electron-photon interactions. The electron-photon coupling introduces explicit photon replicas into the bandstructure and all subbands gain a photon content, constant for each subband, that can deviate from an integer value as the coupling is increased or the photon energy is varied. The subbands show a complex Rabi anticrossing behavior when the photon energy and the coupling bring subbands into resonances. The complicated energy subband structure leads to photon density variations in reciprocal space when resonances occur in the spectrum. The electron-photon coupling polarizes the charge density and tends to reduce the Coulomb exchange effects as the coupling strength increases., Comment: RevTeX - pdfLaTeX, 12 pages with 8 included pdf figures

We investigate the electronic, the thermal, and the optical properties of BN-codoped MgO monolayers taking into account the interaction effects between the B and the N dopant atoms. The relatively wide indirect band gap of a pure MgO nanosheet can be changed to a narrow direct band gap by tuning the B-N attractive interaction. The band gap reduction does not only enhance the optical properties, including the absorption spectra and the optical conductivity, but also the most intense peak is shifted from the Deep-UV to the visible light region. The red shifting of the absorption spectra and the optical conductivity are caused by the attractive interaction. In addition, both isotropic and anisotropic characteristics are seen in the optical properties depending on the strength of the B-N attractive interaction. The heat capacity is reduced for the BN-doped MgO monolayer, which can be referred to changes in the bond dissociation energy. The bond dissociation energy decreases as the difference in the electronegativities of the bonded atoms decreases. The lower difference in the electronegativities leads to a weaker endothermic process resulting in reduction of the heat capacity. An ab initio molecular dynamics, AIMD, calculation is utilized to check the thermodynamic stability of the pure and the BN-codoped MgO monolayers. We thus confirm that the BN-codopant atoms can be used to gain control of the properties of MgO monolayers for thermo- and opto-electronic devices., Comment: RevTeX - pdfLaTeX, 10 pages with 8 included pdf figures

The electronic, thermal, magnetic and optical properties of BN-codoped strontium oxide (SrO) monolayers are studied taking into account the interaction effects between the B and the N dopant atoms. The indirect band gap of a pure two dimensional SrO is modified to a narrow direct band gap by tuning the B-N attractive interaction. The B or N separately doped SrO leads to a metallic behavior, while a BN-codoped SrO has a semiconductor character. The strong B-N attractive interaction changes a non-magnetic SrO to a magnetic system and reduces its heat capacity. An ab initio molecular dynamics, AIMD, calculations are also utilized to check the thermodynamic stability of the pure and BN-codoped SrO monolayers. The band gap reduction of SrO increases the optical conductivity shifting the most intense peak from the Deep-UV to the visible light region. The red shifted optical conductivity emerges due to the B-N attractive interaction. In addition, both iso- and anisotropic characters are seen in the optical properties depending on the strength of the B-N attractive interaction. It can thus be confirmed that the interaction effects of the BN-codopants can be used to control the properties of SrO monolayers for thermo- and opto-electronic devices., Comment: RevTeX - pdfLaTeX, 9 pages with 10 included pdf figures

The electronic, the thermal, and the optical properties of hexagonal MgX monolayers (where X=C, N, and O) are investigated via first principles studies. Ab-initio molecular dynamic, AIMD, simulations using NVT ensembles are performed to check the thermodynamic stability of the monolayers. We find that an MgO monolayer has semiconductor properties with a good thermodynamic stability, while the MgC and the MgN monolayers have metallic characters. The calculated phonon band structures of all the three considered monolayers shows no imaginary nonphysical frequencies, thus indicating that they all have excellent dynamic stability. The MgO monolayer has a larger heat capacity then the MgC and the MgN monolayers. The metallic monolayers demonstrate optical response in the IR as a consequence of the metal properties, whereas the semiconducting MgO monolayer demonstrates an active optical response in the near-UV region. The optical response in the near-UV is beneficial for nanoelectronics and photoelectric applications. A semiconducting monolayer is a great choice for thermal management applications since its thermal properties are more attractive than those of the metallic monolayer in terms of heat capacity, which is related to the change in the internal energy of the system., Comment: RevTeX - pdfLaTeX, 9 pages with 8 included pdf figures

The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of the 2D nanomaterial, according to our results. The electron density of a planar SiC monolayer is calculated, as well as the effects of buckling on it. According to our findings, a siligraphene monolayer is a semiconductor nanomaterial with a direct electronic band gap that decreases as the planar buckling rises. The contributions to the density of states differ owing to changes in the system's structure. Another explanation is that planar buckling reduces the sp$^2$ overlapping, breaking the bond symmetry causing it to become a sp$^3$ bond. We show that increased planar buckling between the Si and the C atoms alters the monolayer's optical, mechanical, and thermal properties. A managed planar buckling increases the optical conductivity with a significant shift in the far visible range, as all optical spectra features are red shifted, still remaining visible. Instead of a $\sigma\text{-}\sigma$ covalent bond, the sp$^3$ hybridization produces a stronger $\sigma\text{-}\pi$ bond. Optical characteristics such as the dielectric function, the absorbance, and the optical conductivity of a SiC monolayer are investigated for both parallel and perpendicular polarization of the incoming electric field for both flat and planar buckled systems. The findings show that the optical properties are influenced for both of these two polarizations, with a significant change in the optical spectrum from the near visible to the far visible. The ability to manipulate the optical and electrical characteristics of this critical 2D material through planar buckling opens up new technological possibilities, especially for optoelectronic devices., Comment: RevTeX - pdfLaTeX, 11 pages with 11 included pdf figure

The structural, electronic, and optical properties of flat and buckled AlN monolayers are investigated using first-principles approaches. The band gap of a flat AlN monolayer is changed from an indirect one to a direct one, when the planar buckling increases, primarily due to diminishing sp$^2$ overlapping and bond symmetry breaking in the conversion to sp$^3$ bonds. The sp$^3$ hybridization thus results in a stronger $\sigma\text{-}\pi$ bond rather than a $\sigma\text{-}\sigma$ covalent bond. The calculations of the phonon band structure indicates that the buckled AlN monolayers are structurally and dynamically stable. The optical properties, such as the dielectric function, the refractive index, and the optical conductivity of an AlN monolayer are evaluated for both flat systems and those impacted with planar buckling. The flat AlN monolayer has outstanding optical characteristics in the Deep-UV and absorbs more effectively in the UV spectrum due to its large band gap. The results reveal that optical aspects are enhanced along different directions of light polarization, with a considerable shift in the optical spectrum from Deep-UV into the visible range. Additionally, depending on the polarization direction of the incoming light, increased planar buckling enhances the optical conductivity in both the visible and the Deep-UV domains. The ability to modify the optical and electronic properties of these essential 2D materials using planar buckling technique opens up new technological possibilities, particularly for optoelectronic devices., Comment: RevTeX - pdfLaTeX, 9 pages with 7 included pdf figures

In this paper a comparative study of the electronic and magnetic properties of quasi-two-dimensional electrons in an artificial graphene-like superlattice composed of circular and elliptical quantum dots is presented. A complete orthonormal set of basis wave functions, which has previously been constructed in the frame of the Coulomb gauge for the vector potential has been implemented for calculation of the energy dispersions, the Hofstadter spectra, the density of states and the orbital magnetization of the considered systems, taking into account both the translational symmetry of the superlattice and the wave function phase-shifts due to the presence of a transverse external magnetic field. Our calculations indicate a topological change in the miniband structure due to the ellipticity of the quantum dots, and non-trivial modifications of the electron energy dispersion surfaces in reciprocal space with the change of the number of magnetic flux quanta through the unit cell of the superlattice. The ellipticity of the QDs leads to an opening of a gap and considerable modifications of the Hofstadter spectrum. The orbital magnetization is shown to reveal significant oscillations with the change of the magnetic flux. The deviation from the circular geometry of quantum dots has a qualitative impact on the dependencies of the magnetization on both the magnetic flux and the temperature.

We apply quantum electrodynamical density functional theory to obtain the electronic density, the spin polarization, as well as the orbital and the spin magnetization of square periodic arrays of quantum dots or antidots subjected to the influence of a far-infrared cavity photon field. A gradient-based exchange-correlation functional adapted to a two-dimensional electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non-trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and the spin magnetization. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron-photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dots structure, while they weaken the paramagnetic effect in an antidot structure. As the number of electrons per unit cell of the lattice increases the electron-photon interaction reduces the exchange forces that would otherwise promote strong spin splitting for both the dot and the antidot array.

We use a recently proposed quantum electrodynamical density functional theory (QEDFT) functional in a real-time excitation calculation for a two-dimensional electron gas in a square array of quantum dots in an external constant perpendicular magnetic field to model the influence of cavity photons on the excitation spectra of the system. The excitation is generated by a short elecrical pulse. The quantum dot array is defined in an AlGaAs-GaAs heterostructure, which is in turn embedded in a parallel plate far-infrared photon-microcavity. The required exchange and correlation energy functionals describing the electron-electron and electron-photon interactions have therefore been adapted for a two-dimensional electron gas in a homogeneous external magnetic field. We predict that the energies of the excitation modes activated by the pulse are generally red-shifted to lower values in the presence of a cavity. The red-shift can be understood in terms of the polarization of the electron charge by the cavity photons and depends on the magnetic flux, the number of electrons in a unit cell of the lattice, and the electron-photon interaction strength. We find an interesting interplay of the exchange forces in a spin polarized two-dimensional electron gas and the square lattice structure leading to a small but clear blue-shift of the excitation mode spectra when one electron resides in each dot., Comment: RevTeX - pdfLaTeX, 11 pages with 8 included pdf figures

We report the electronic, the thermal, and the optical properties of a Germagraphene (GeC) monolayer taking into account buckling effects. The relatively wide direct band gap of a flat GeC nanosheet can be changed by tuning the planar buckling. A GeC monolayer has an sp$^2$ hybridization in which the contribution of an $s$-orbital is half of the contribution of a $p$-orbital leading to stronger $\sigma\text{-}\sigma$ bonds compared to the $\sigma\text{-}\pi$ bonds. Increasing the planar buckling, the contribution of an $s$-orbital is decreased while the contribution of a $p$-orbital is increased resulting in a sp$^3$-hybridization in which the $\sigma\text{-}\pi$ bond becomes stronger than the $\sigma\text{-}\sigma$ bond. As a result, the band gap of a buckled GeC is reduced and thus the thermal and the optical properties are significantly modified. We find that the heat capacity of the buckled GeC is decreased at low values of planar buckling, which is caused by the anticrossing of the optical and the acoustic phonon modes affecting phonon scattering processes. The resulting optical properties, such as the dielectric function, the refractive index, the electron energy loss spectra, the absorption, and the optical conductivity show that a buckled GeC nanosheet has increased optical activities in the visible light region compared to a flat GeC. The optical conductivity is red shifted from the near ultraviolet to the visible light region, when the planar buckling is increased. We can thus confirm that the buckling can be seen as another parameter to improve GeC monolayers for optoelectronic devices., Comment: RevTeX - pdfLaTeX, 10 pages with 12 included pdf figures

We perform theoretical calculations to study steady-state electron transport in a double quantum dot, DQD, coupled to a quantized cavity photon field both in resonance and off-resonance regimes considering weak and strong coupling. In the resonant strong coupling regime, photon exchanges between the energy states of the DQD and the cavity are found reflecting multiple Rabi-resonances. The electron occupation of the states and the transport current can be smoothly increased by tuning the cavity-environment coupling strength. Making the system off-resonant, but still in the strong coupling regime, the photon exchange is diminished and the electron occupation of the system and the transport current through it are prominent for high cavity-environment coupling strength. In the weak coupling regime between the DQD and the cavity, the system has almost the same response in the resonant and the off-resonant regimes at high values of the cavity-environment coupling strength., Comment: arXiv admin note: text overlap with arXiv:2206.15193

We study electron transport through double quantum dots (DQD) coupled to a cavity with a single photon mode. The DQD is connected to two electron reservoirs, and the total system is under an external perpendicular magnetic field. The DQD system exhibits a complex multi-level energy spectrum. By varying the photon energy, several anti-crossings between photon dressed electron states of the DQD-cavity system are found at low strength of the magnetic field. The anti-crossings are identified as multiple Rabi resonances arising from the photon exchange between these states. As the results, a dip in the current is seen caused by the multiple Rabi resonances. By increasing the strength of the external magnetic field, a dislocation of the current dip to a lower photon energy is found and the current dip can be diminished. The interplay of the strength of the magnetic field and the geometry of the states the DQD system can weaken the multiple Rabi resonances in which the exchange of photon between the anti-crossings is decreased. We can therefore confirm that the electron transport behavior in the DQD-cavity system can be controlled by manipulating the external magnetic field and the photon cavity parameters., Comment: arXiv admin note: text overlap with arXiv:2206.15193

We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $\Delta$. By tuning the $\Delta$, the strong $\sigma\text{-}\sigma$ bond through sp$^2$ hybridization of a flat form of these monolayers can be changed to a stronger $\sigma\text{-}\pi$ bond through sp$^3$ hybridization. Consequently, the band gaps of the monolayers are tuned due to a dislocation of the $s$- and $p$-orbitals towards the Fermi energy. The band gaps decrease with increasing $\Delta$ for those flat monolayers, which have a band gap greater than $1.0$ eV, while no noticeable change or a flat dispersion of the band gap is seen for the flat monolayers, that have a band gap less than $1.0$ eV. The decreased band gap causes a decrease in the excitation energy, and thus the static dielectric function, refractive index, and the optical conductivity are increased. In contrast, the flat band gap dispersion of few monolayers in the group III-Nitride induces a reduction in the static dielectric function, the refractive index, and the optical conductivity. We therefore confirm that tuning of the planar buckling can be used to control the physical properties of these monolayers, both for an enhancement and a reduction of the optical properties. These results are of interest for the design of optoelectric devices in nanoscale systems., Comment: RevTeX - pdfLaTeX, 7 pages with 7 included pdf figures

We study electron transport properties through a double quantum dot (DQD) system coupled to a single mode photon cavity, DQD-cavity. The DQD system has a complex multilevel energy spectrum, in which by tuning the photon energy several anti-crossings between the electron states of the DQD system and photon dressed states are produced, which have not been seen in a simple two level DQD system. Three different regions of the photon energy are studied based on anti-crossings, where the photon energy ranges are classified as "low", "intermediate", and "high". The anti-crossings represent multiple Rabi-resonances, which lead to a current dip in the electron transport at the "intermediate" photon energy. Increasing the electron-photon coupling strength, $g_\gamma$, the photon exchanges between the anti-crossing states are changed leading to a dislocation of the multiple Rabi resonance states. Consequently, the current dip at the intermediate photon energy is further reduced. Additionally, we tune the cavity-environment coupling, $\kappa$, to see how the transport properties in the strong coupling regime, g$_{\gamma}>\kappa$, are changed for different directions of the photon polarization. Increasing $\kappa$ with a constant value of $g_\gamma$, a current enhancement in the intermediate photon energy is found, and a reduction in the current is seen for the "high" photon energy range. The current enhancement in the intermediate photon energy is caused by the weakening of the multiple Rabi-resonance in the system.

The orbital and spin magnetization of a cavity-embedded quantum dot array defined in a GaAs heterostructure are calculated within quantum-electrodynamical density-functional theory (QEDFT). To this end a gradient-based exchange-correlation functional recently employed for atomic systems is adapted to the hosting two-dimensional electron gas (2DEG) submitted to an external perpendicular homogeneous magnetic field. Numerical results reveal the polarizing effects of the cavity photon field on the electron charge distribution and nontrivial changes of the orbital magnetization. We discuss its intertwined dependence on the electron number in each dot, and on the electron-photon coupling strength. In particular, the calculated dispersion of the photon-dressed electron states around the Fermi energy as a function of the electron-photon coupling strength indicates the formation of magnetoplasmon-polaritons in the dots., Comment: RevTeX - pdfLaTeX, 12 pages with 9 included pdf figures

We study thermoelectric transport through a serial double quantum dot (DQD) coupled to two metallic leads with different thermal energies. We take into account the electron sequential and cotunneling effects via different master equation approaches. In the absence of intra- and inter-dot Coulomb interactions, a small peak in thermoelectric and heat currents is found for $E_{\rm L} \text{=} E_{\rm R}$ indicating the Coulomb blockade DQD regime, where $E_{\rm L}(E_{\rm R})$ is the energy of the state of the left(right) quantum dot. In the presence of intra- and inter-dot Coulomb interactions with strengths U$_{\rm intra}$, and U$_{\rm inter}$, respectively, avoided crossings or resonance energies between the intra- and the inter-dot two-electron states, 2ES, are found. These resonances induce extra transport channels through the DQD leading to strong side peaks in the thermoelectric and heat currents at $ E_{\rm L} \text{-} E_{\rm R} = \pm (U_{\rm intra} \text{-} U_{\rm inter})$ in addition to the main peak generated at $E_{\rm L} \text{=} E_{\rm R}$. The current side peaks are enhanced by increased strength of the Coulomb interactions. Interestingly, the current side peaks are enhanced when cotunneling terms are considered in which the resonances of the 2ESs assist the electron cotunneling process through the system. Furthermore, the issue of coherences is carefully checked in the DQD-leads system via different approaches to the master equation, which are the Pauli, the Redfield, a first order Lindblad, and the first- and second order von-Neumann methods. We realize that the Pauli method gives a wrong results for the thermoelectric transport when the role of the coherences is relevant., Comment: RevTeX - pdfLaTeX, 9 pages with 9 pdf-figures included

The optical properties of a hexagonal Boron Nitride (BN) monolayer across the UV spectrum are studied by tuning its planar buckling. The strong $\sigma\text{-}\sigma$ bond through sp$^2$ hybridization of a flat BN monolayer can be changed to a stronger $\sigma\text{-}\pi$ bond through sp$^3$ hybridization by increasing the planar buckling. This gives rise to the $s$- and $p$-orbital contributions to form a density of states around the Fermi energy, and these states dislocate to a lower energy in the presence of an increased planar buckling. Consequently, the wide band gap of a flat BN monolayer is reduced to a smaller band gap in a buckled BN monolayer enhancing its optical activity in the Deep-UV region. The optical properties such as the dielectric function, the reflectivity, the absorption, and the optical conductivity spectra are investigated. It is shown that the absorption rate can be enhanced by $(12\text{-}15)\%$ for intermediate values of planar buckling in the Deep-UV region, and $(15\text{-}20)\%$ at higher values of planar buckling in the near-UV region. Furthermore, the optical conductivity is enhanced by increased planar buckling in both the visible and the Deep-UV regions depending on the direction of the polarization of the incoming light. Our results may be useful for optoelectronic BN monolayer devices in the UV range including UV spectroscopy, deep-UV communications, and UV photodetectors., Comment: RevTeX - pdfLaTeX, 9 pages with 7 pdf-figures included

The electronic and the optical properties of metallic nitride (MN) monolayers are studied using a DFT formalism. In most of these monolayers, the electron density of the metallic atoms is much higher than that of the nitride atoms, and ionic, covalent, and metallic bonds are found in M-N bonds, resulting in fascinating electronic and optical properties. The optical band gap is varied from almost $0.0$ to $3.0$~eV for the MN monolayers depending on the bond type between the metallic and the nitride atoms, as well as the contribution of the type of orbitals around the Fermi energy. The optical properties such as the dielectric function, the excitation spectra, the refractive index, the reflectivity, and the optical conductivity of MN monolayers are calculated. The excitation energy and static dielectric constant are found to be inversely proportional to the band gap at low photon energy. The MN monolayers with a large band gap have good visible light functionality, while the MN monolayers with a lower band gap are found to be active in the infrared region. Furthermore, it is shown that the optical properties of MN monolayers show a strong anisotropy with respect to the polarization of the incoming light. Consequently, our results for the optical properties of MN monolayers show that they could be beneficial in optoelectronic device applications., Comment: RevTeX - pdfLaTeX, 8 pages with 7 pdf-figures included

Thermal transport through a Coulomb-blockade quantum dot (QD) coupled to two metallic leads is studied using five different approaches to the master equation in which sequential and coutuneling terms are taken into account. In the presence of intradot Coulomb interactions, a plateau in the thermo-particle, the heat, and the energy currents is seen. The current plateau diminishes at a high thermal bias between the leads. It is shown that the Pauli, the Redfield, the Lindblad-type equation with first order tunneling rates, and first-order von-Neumann master equations give very similar thermal transport indicating the conservation of coherency in the electron transport in sequential tunneling between the QD and leads. In contrast, the thermal transport is suppressed when coutuneling processes are taken into account via a second-order von-Neumann master equation. The consideration of second order effects with respect to the QD-leads coupling brings in a wealth of virtual processes at the contact to each lead. These virtual processes directly weaken the effects of the contribution of the first order direct processes to the overall transport, and introduce important other aspects of the transport, as level broadening, energy shifts, and lifetimes in the time-domain. As a result the current plateau formed via the Coulomb interaction diminishes, when second order and cotunneling processes are considered., Comment: RevTeX - pdfLaTeX, 8 pages with 9 pdf-figures included

We present theoretical calculations for the cyclotron resonance and various magnetoplasmon modes of a Coulomb interacting two-dimensional GaAs electron gas (2DEG) modulated as a lateral superlattice of quantum dots subjected to an external perpendicular constant magnetic field. We use a real-time excitation approach based on the Liouville-von Neumann equation for the density operator, that can go beyond linear response delivering information of all longitudinal and transverse collective modes of interest to the same order. We perform an extensive analysis of the coexisting collective modes due to the lateral confinement and the magnetic field for a different number of electrons in each dot. In the limit of vanishing dot modulation of the 2DEG we find signs of the structure of the Hofstadter butterfly in the excitation spectra., Comment: RevTeX - pdfLaTeX, 10 pages with 9 pdf-figures included

The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied doping distances, and atomic dopant interactions for the same substitutional doping concentration. The results indicate that the Ga atoms alter the band structure and the band gap in the silicene monolayer at various concentrations, which can be referred back to to the repulsive interaction of Ga-Ga atoms. The band gap is determined by the interaction strength of the Ga-Ga atoms, the Coulomb repulsive force, and it does not always widen as doping concentration increases. In addition, our spin-polarized DFT calculations show that these monolayers behave like nonmagnetic semiconductors, exhibiting symmetric spin-up and spin-down channels. The repulsive interaction between the Ga atoms causes a symmetry breaking of the monolayers. As a consequence, a Ga dopant can open the band gap, leading to better thermoelectric properties such as the Seebeck coefficient and the figure of merit, as well as an increase in the optical response. As a result of our estimates, Ga doped silicene monolayers could be advantageous in thermoelectric and optoelectronic devices., Comment: 9 pages and 7 figures

The electronic, thermal and optical properties of a monolayer BeO with Boron (B) and Nitrogen (N) co-dopant atoms are studied by means of a density functional theory computation. Our calculations reveal that BeO with BN-codopant atoms can give rise to more effective and outstanding performance for the thermal and optical responses. More significantly, the monolayer BeO with BN codopant atoms becomes a semiconductor with a direct band gap in comparison with the insulator behavior of pristine BeO. The particular attention of this work is paid to the influence of the atomic configuration and the interaction of the B and N dopant atoms with BeO. The interaction of the B and N atoms with the BeO monolayer diminishes degenerate energy states forming flat bands. It is also found that there is a strong attractive interaction between the O and N atoms forming a strong sigma bond breaking the symmetry of BeO structure. Consequently, the band gap is reduced leading to a semiconductor behavior with improved thermoelectric properties such as the Seebeck coefficient and the figure of merit. The reduced band gap and the flat bands induce a high optical responses such as the refractive index, the reflectivity and the optical conductivity in the visible light region. In addition, the anisotropy of a monolayer BeO with B and N atoms regarding different direction of electromagnetic polarization is presented. We anticipate that our results can be useful for design of both thermoelectric and optoelectronic devices., Comment: 10 pages, 8 figures

In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using substitutional N or B dopant atoms, we find that the band gap can be tuned and the optical properties can be improved. In the N(B)-doped BeO monolayer, the Fermi energy slightly crosses the valence(conduction) band forming a degenerate semiconductor structure. The N or B atoms thus generate new states around the Fermi energy increasing the optical conductivity in the visible light region. Furthermore, the influences of dopant atoms on the electronic structure, the stability, the dispersion energy, the density of states, and optical properties such as the plasmon frequency, the excitation spectra, the dielectric functions, the static dielectric constant, and the electron energy loss function are discussed for different directions of polarizations for the incoming electric field., Comment: 10 pages, 13 figures

We theoretically study the electronic and the thermal characteristics of Tantalum, Ta, doped Molybdenum disulfide, MoS$_2$, using density functional theory. It has been shown that the MoS$_2$ monolayer is not a good material for thermoelectric devices due to its relatively large band gap. We find that a Ta doped MoS$_2$ forming a TaMoS$_2$ monolayer can be useful for thermoelectric devices. The particular attention of this work is paid to the interaction effect between the Ta atoms in the MoS$_2$ structure. We find that the interaction type is repulsive. It introduces an asymmetry in the density of states, DOS, reducing the band gap. In the presence of a strong repulsive interaction of Ta-Ta atoms, new states in the DOS around the Fermi energy are found leading to a reduction of the band gap. Consequently, a high Seebeck coefficient and figure of merit are seen over a wide range of energy around the Fermi energy. In contrast, a small reduction of the band gap and a vanishing degeneracy of the valence and the conduction bands are observed for the case of a weak Ta-Ta repulsive interaction leading to less promising thermoelectric properties., Comment: 7 pages, 7 figure

Physical quilities such as electronic, mechanical, thermal, and optical properties of Al and P codoped silicene forming AlSi$_6$P nanosheets are investigated by first-principle calculations within density functional theory. A particular attention of this study is paid to the interaction effect between the Al and P atoms in the buckled silicene structure. We infer that the interaction type is attractive and it leads to an asymmetry in the density of states opening up a band gap. In contrast to BN-codoped silicene, the buckling in the Al-P codoped silicene is not much influenced by the dopants as the bond lengths of Si-P and Al-P are very similar to the Si-Si bond lengths. On the other hand, the longer bond length of Si-Al decreases the stiffness and thus induces fractures at smaller values of applied strain in AlSi$_6$P. The elastic and nonelastic regions of the stress-strain curve of AlSi$_6$P depend on the placement of the Al and P atoms. The finite band gap caused by the Al-P dopant leads to enhancement of the Seebeck coefficient and the figure of merit, and induces a redshift of peaks in the dielectric response, and the optical conductivity. Finally, properties of the real and imaginary parts of the dielectric function, the excitation spectra, the refractive index, and the optical response of AlSi$_6$P are reported., Comment: 9 pages, 8 figures

The properties of graphene-like BC$_6$N semiconductor are studied using density functional theory taking into account the attractive interaction between B and N atoms. In the presence of a strong attractive interaction between B and N dopant atoms, the electron charge distribution is highly localized along the B-N bonds, while for a weaker attractive interaction the electrons are delocalized along the entire hexagonal ring of BC$_6$N. Furthermore, when both B and N atoms are doped at the same site of the hexagon, the breaking of the sub-lattice symmetry is low producing a small bandgap. In contrast, if the dopant atoms are at different sites, a high sub-lattice symmetry breaking is found leading to a large bandgap. The influences of electron localization/delocalization and the tunable bandgap on thermal behaviors such as the electronic thermal conductivity, the Seebeck coefficient, and the figure of merit, and optical properties such as the dielectric function, the excitation spectra, the refractive index, the electron energy loss spectra, the reflectivity, and the optical conductivity are presented. An enhancement with a red shift of the optical conductivity at low energy range is seen while a reduction at the high energy range is found indicating that the BC$_6$N structure may be useful for optoelectronic devices in the low energy, visible range., Comment: 9 pages with including 11 figures

We study the effects of an attractive interaction between the boron (B) and the nitrogen (N) atoms doped in a bilayer graphene (BLG), BC$_{14}$N, on the electronic, the thermal and the optical properties for two different types of a doping process: First, both the B and the N atoms are doped in the same layer while the other layer is undoped. Second, the B and N atoms are doped in both layers. An attractive interaction between the B and N atoms does not influence the interlayer interaction in the first case, while it does in the second case. We find that the strong B-N attractive interaction in one layer induces metallic behavior due to the crossing of the valence band and the Fermi energy, while the strong attractive interaction between both layers induces a semiconductor property arising from the emergence a bandgap. We therefore confirm that the metallic-like BLG is not a good material for thermal devices because it has a low figure of merit, while we notice that the semiconductor-like BLG has a high Seebeck coefficient and figure of merit as well as a low thermal conductivity. The strong attractive interaction of the B-N atoms between the layers gives rise to a prominent peak to appear in dielectric function, the excitation and the absorption spectra in the low energy, visible range, while a very weak peak is seen in the case of a strong attractive interaction between the B and N doped in one layer. Controlling the B and N atomic configurations in the BLG may help to improve the material for use in both thermoelectric and optoelectronic devices., Comment: 6 pages with including 6 figures

We demonstrate that the electronic, thermal, and optical properties of a graphene bilayer with boron and nitrogen dopant atoms can be controlled by the interlayer distance between the layers in which the interaction energy and the van der Waals interaction between the dopant atoms play an essential role. We find a conversion of an AA- to an AB-stacked bilayer graphene caused by the repulsive interaction between dopant atoms. At a short interlayer distance, a strong repulsive interaction inducing a strong electric dipole moment of the dopant atoms is found. This gives rise to a breaking of the high symmetry, opening up a bandgap. Consequently, a considerable change in thermoelectric properties such as the Seebeck coefficient and the figure of merit are seen. The repulsive interaction is reduced by increasing the interlayer distance, and at a large interlayer distance the conversion process of the stacking order vanishes. A small bandgap is found leading to a low Seebeck coefficient and a figure of merit. For both short and large interlayer distances, a prominent peak in the optical response is found in the visible range and the peak position is inversely proportional to the interlayer distance., Comment: RevTeX, 7 pages with 7 included figures

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In the presence of the attractive interaction, an AA-stacking of BN-codoped BLG is formed with a less stable structure leading to weak mechanical properties of the system. Low values of the Young modulus, the ultimate strength and stress, and the fracture strength are observed comparing to a pure BLG. In addition, the attractive interaction induces a small bandgap that deteriorates the thermal and optical properties of the system. In contrast, in the presence of a repulsive interaction between the B and N atoms, the AA-stacking is converted to a AB-stacking with a more stable structure. Improved mechanical properties such as higher Young modulus, the ultimate strength and stress, fracture strength are obtained comparing to the AA-stacked BN-codoped BLG. Furthermore, a larger bandgap of the AB-stacked bilayer enhances the thermal and the optical characteristics of the system., Comment: RevTeX, 10 pages with 8 included figures

The geometric, electronic, magnetic, thermal, and optical properties of transition metal (TM) doped silicene are systematically explored using spin-dependent density functional computation. We find that the TM atoms decrease the buckling degree of the silicene structure caused by the interaction between the dopant TM atoms and the Si atoms in the silicene layer plane which is quite strong. In some TM-silicenes, parallel bands and the corresponding van Hove singularities are observed in the electronic band structure without and with spin-polarization. These parallel bands are the origin of most of the transitions in the visible and the UV regions. A high Seebeck coefficient is found in some TM-silicene without spin-polarization. In the presence of emergent spin-polarization, a reduction or a magnification of the Seebeck coefficient is seen due to a spin-dependent phase transition. We find that the preferred state is a ferromagnetic state with a very high Curie temperature. We observe a strong interaction and large orbital hybridization between the TM atoms and the silicene. As a result, a high magnetic moment emerges in TM-silicene. Our results are potentially beneficial for thermospin, and optoelectronic nanodevices., Comment: RevTeX, 8 pages with 11 included eps figures

We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the interlayer interactions play important roles shaping the physical properties of the systems. We find the interlayer interaction in Si$_2$C$_{14}$ to be repulsive due to the interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive interlayer interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive interlayer interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive interaction decreases the Young modulus while the attractive interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $\pi{\text -}\pi^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $\pi{\text -}\pi^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N., Comment: RevTeX, 11 pages with 5 included figures

The buckling effects due to BN-bonds in BN-codoped silicene, BSi$_6$N, on structural stability, electronic band structure, and mechanical, thermal and optical properties are studied systematically by first-principle calculations within density functional theory. In the presence of BN-bonds, a high warping in BSi$_6$N indicating a high buckling effect is found due to the presence of a repulsive interaction between B and N atoms. It thus breaks the sublattice symmetry of silicene and opens up a bandgap. The high buckling of BSi$_6$N leads to a decrease in its stiffness and thus induces fractures at small values of applied strain. The finite bandgap caused by the BN-bonds leads to enhancement of the Seebeck coefficient and the figure of merit, and induces a redshift of a peak in the dielectric response. By increasing the distance between the B and N atoms i.e. for the BSi$_6$N without BN-bonds, a flatter BSi$_6$N is found compared to pristine silicene. The stiffness of the structure and the ultimate strain are increased. The breaking of the sublattice symmetry is very weak and a very small bandgap is revealed. As a result, the Seebeck coefficient and the figure of merit stay very small. A reduction in the optical response is seen due to an indirect bandgap., Comment: RevTeX, 9 pages with 6 included figures

We explore higher order dynamical effects in the transport through a two-dimensional nanoscale electron system embedded in a three-dimensional far-infrared photon cavity. The nanoscale system is considered to be a short quantum wire with a single circular quantum dot defined in a GaAs heterostructure. The whole system, the external leads and the central system are placed in a constant perpendicular magnetic field. The Coulomb interaction of the electrons, the para- and diamagnetic electron-photon interactions are all treated by a numerically exact diagonalization using step-wise truncations of the appropriate many-body Fock spaces. We focus on the difference in transport properties between a description within an electric dipole approximation and a description including all higher order terms in a single photon mode model. We find small effects mostly caused by an electrical quadrupole and a magnetic dipole terms that depend strongly on the polarization of the cavity field with respect to the transport direction and the photon energy. When the polarization is aligned along the transport direction we find indications of a weak self-induction that we analyze and compare to the classical counterpart, and the self-energy contribution of high-order interaction terms to the states the electrons cascade through on their way through the system. Like expected the electron-photon interaction is well described in the dipole approximation when it is augmented by the lowest order diamagnetic part for a nanoscale system in a cavity in an external magnetic field., Comment: RevTeX - pdfLaTeX, 15 pages with 15 included pdf-figures

We investigate the electronic, thermal, and optical characteristics of graphene like SiC$_x$ structure using model calculations based on density functional theory. The change in the energy bandgap can be tuned by the Si atomic configuration, rather than the dopants ratio. The effects of the concentration of the Si atoms and the shape of supercell are kept constant, and only the interaction effects of two Si atoms are studied by varying their positions. If the Si atoms are at the same sublattice positions, a maximum bandgap is obtained leading to an increased Seebeck coefficient and figure of merit. A deviation in the Wiedemann-Franz ratio is also found, and a maximum value of the Lorenz number is thus discovered. Furthermore, a significant red shift of the first peak of the imaginary part of the dielectric function towards the visible range of the electromagnetic radiation is observed. On the other hand, if the Si atoms are located at different sublattice positions, a small bandgap is seen because the symmetry of sublattice remains almost unchanged. Consequently, the Seebeck coefficient and the dielectric function are only slightly changed compared to pristine graphene. In addition, the electron energy loss function is suppressed in Si-doped graphene. These unique variations of the thermal and the optical properties of Si-doped graphene are of importance to understand experiments relevant to optoelectronic applications., Comment: RevTeX, 7 pages with 5 included jpg figures

We model monolayer graphene-like materials with BC$_6$N stoichiometry where the bonding between the B and the N atoms plays an important role for their physical and chemical properties. Two types of BC$_6$N are found based on the BN bonds: In the presence of BN bonds, an even number of $\pi$-bonds emerges indicating an aromatic structure and a large direct bandgap appears, while in the absence of BN bonds, an anti-aromatic structure with an odd-number of $\pi$-bonds is found resulting a direct small bandgap. The stress-strain curves shows high elastic moduli and tensile strength of the structures with BN-bonds, compared to structures without BN-bonds. Self-consistent field calculations demonstrate that BC$_6$N with BN-bonds is energetically more stable than structures without BN-bonds due to a strong binding energy between the B and the N atoms, while their phonon dispersion displays that BC$_6$N without BN-bonds has more dynamical stability. Furthermore, all the BC$_6$N structures considered show a large absorption of electromagnetic radiation with polarization parallel to the monolayers in the visible range. Finer detail of the absorption depend on the actual structures of the layers. A higher electronic thermal conductivity and specific heat are seen in BC$_6$N systems caused by hot carrier--assisted charge transport. This opens up a possible optimization for bolometric applications of graphene based material devices., Comment: RevTeX, 9 pages with 6 included jpg figures

We model boron and nitrogen doped/codoped monolayer graphene to study its stability, interaction energy, electronic and thermal properties using density functional theory. It is found that a doped graphene sheet with non-bonded B or N atoms induces an attractive interaction and thus opens up the bandgap. Consequently, the power factor is enhanced. Additionally, bonded B or N atoms in doped graphene generate a repulsive interaction leading to a diminished bandgap, and thus a decreased power factor. We emphasis that enhancement of the power factor is not very sensitive to the concentration of the boron and nitrogen atoms, but it is more sensitive to the positions of the B or N atoms in ortho, meta, and para positions of the hexagonal structure of graphene. In the B and N codoped graphene, the non-bonded dopant atoms have a weak attractive interaction and interaction leading to a small bandgap, while bonded doping atoms cause a strong attractive interaction and a large bandgap. As a result, the power factor of the graphene with non-bonded doping atoms is reduced while it is enhanced for graphene with bonded doping atoms., Comment: RevTeX, 10 pages with 9 included pdf figures

We consider tubular nanowires with a polygonal cross-section. In this geometry the lowest energy states are separated in two sets, one of corner and one of side-localized states, respectively. The presence of an external magnetic field transverse to the nanowire imposes an additional localization mechanism, the electrons being pushed sideways relatively to the direction of the field. This effect has important implications on the current density, as it creates current loops induced by the Lorentz force. We calculate numerically the electromagnetic field radiated by hexagonal, square, and triangular nanowires. We demonstrate that, because of the aforementioned localization properties, the radiated field can have a complex distribution determined by the internal geometry of the nanowire. We suggest that measuring the field in the neighborhood of the nanowire could be the basic idea of a tomography of the electron distribution inside it, if a smaller receiver antenna could be placed in that zone., Comment: 12 pages 8 figures