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The angular dependence of the deposition rates due to ions and neutrals in high-power impulse magnetron sputtering (HiPIMS) discharges with a titanium target were determined experimentally using a magnetically shielded and charge-selective quartz crystal microbalance (or ionmeter). These rates have been established as a function of the argon working gas pressure, the peak discharge current density, and the pulse length. For all explored cases, the total deposition rate exhibits a heart-shaped profile and the ionized flux fraction peaks on the discharge axis normal to the cathode target surface. This heart-shaped pattern is found to be amplified at increasing current densities and reduced at increased working gas pressures. Furthermore, it is confirmed that a low working gas pressure is beneficial for achieving high deposition rates and high ionized flux fractions in HiPIMS operation., Funding Agencies|Swedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University (Faculty Grant SFO-Mat-LiU ) [2009-00971]; Icelandic Research Fund [196141]; Evatec AG

The high power impulse magnetron sputtering (HiPIMS) discharge brings about increased ionization of the sputtered atoms due to an increased electron density and efficient electron energization during the active period of the pulse. The ionization is effective mainly within the electron trapping zone, an ionization region (IR), defined by the magnet configuration. Here, the average extension and the volume of the IR are determined based on measuring the optical emission from an excited level of the argon working gas atoms. For particular HiPIMS conditions, argon species ionization and excitation processes are assumed to be proportional. Hence, the light emission from certain excited atoms is assumed to reflect the IR extension. The light emission was recorded above a 100 mm diameter titanium target through a 763 nm bandpass filter using a gated camera. The recorded images directly indicate the effect of the magnet configuration on the average IR size. It is observed that the shape of the IR matches the shape of the magnetic field lines rather well. The IR is found to expand from 10 and 17 mm from the target surface when the parallel magnetic field strength 11 mm above the racetrack is lowered from 24 to 12 mT at a constant peak discharge current., Funding Agencies|Icelandic Research Fund [196141]; Swedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

In magnetron sputtering, only a fraction of the sputtered target material leaving the ionization region is directed toward the substrate. This fraction may be different for ions and neutrals of the target material as the neutrals and ions can exhibit a different spread as they travel from the target surface toward the substrate. This difference can be significant in high power impulse magnetron sputtering (HiPIMS) where a substantial fraction of the sputtered material is known to be ionized. Geometrical factors or transport parameters that account for the loss of produced film-forming species to the chamber walls are needed for experimental characterization and modeling of the magnetron sputtering discharge. Here, we experimentally determine transport parameters for ions and neutral atoms in a HiPIMS discharge with a titanium target for various magnet configurations. Transport parameters are determined to a typical substrate, with the same diameter (100 mm) as the cathode target, and located at a distance 70 mm from the target surface. As the magnet configuration and/or the discharge current are changed, the transport parameter for neutral atoms xi(tn) remains roughly the same, while transport parameters for ions xi(ti) vary greatly. Furthermore, the relative ion-to-neutral transport factors, xi(ti)/xi(tn), that describe the relative deposited fractions of target material ions and neutrals onto the substrate, are determined to be in the range from 0.4 to 1.1., Funding Agencies|Icelandic Research Fund [196141]; Free State of Saxony; European Regional Development Fund [100336119]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

The influence of pulse length, working gas pressure, and peak discharge current density on the deposition rate and ionised flux fraction in high power impulse magnetron sputtering discharges of copper is investigated experimentally using a charge-selective (electrically biasable) magnetically shielded quartz crystal microbalance (or ionmeter). The large explored parameter space covers both common process conditions and extreme cases. The measured ionised flux fraction for copper is found to be in the range from approximate to 10% to 80%, and to increase with increasing peak discharge current density up to a maximum at approximate to 1.25Acm-2 , before abruptly falling off at even higher current density values. Low working gas pressure is shown to be beneficial in terms of both ionised flux fraction and deposition rate fraction. For example, decreasing the working gas pressure from 1.0 Pa to 0.5 Pa leads on average to an increase of the ionised flux fraction by approximate to 14 percentage points (pp) and of the deposition rate fraction by approximate to 4pp taking into account all the investigated pulse lengths., Funding Agencies|Swedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University [2009-00971]; Icelandic Research Fund (Grant No. 196141), and Evatec AG [196141]; Evatec AG

Population densities of excited states of argon atoms in a high power impulse magnetron sputtering (HiPIMS) discharge are examined using a global discharge model and a collisional-radiative model. Here, the ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model are combined to obtain the population densities of the excited levels of the argon atom in a HiPIMS discharge. The IRM is a global plasma chemistry model based on particle and energy conservation of HiPIMS discharges. OBELIX is a collisional-radiative model where the electron energy distribution is calculated self-consistently from an isotropic Boltzmann equation. The collisional model constitutes 65 individual and effective excited levels of the argon atom. We demonstrate that the reduced population density of high-lying excited argon states scales with (p*)(-6), where p * is the effective quantum number, indicating the presence of a multistep ladder-like excitation scheme, also called an excitation saturation. The reason for this is the dominance of electron impact processes in the population and de-population of high-lying argon states in combination with a negligible electron-ion recombination., Funding Agencies|Free State of Saxony; European Regional Development FundEuropean Commission [100336119]; Icelandic Research Fund [196141]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Magnetron sputtering combines a glow discharge with sputtering from a target that simultaneously serves as a cathode for the discharge. The electrons of the discharge are confined between overarching magnetic field lines and the negatively biased cathode. As the target erodes during the sputter process, the magnetic field strengthens in the cathode vicinity, which can influence discharge parameters with the risk of impairing reproducibility of the deposition process over time. This is of particular concern for high-power impulse magnetron sputtering (HiPIMS) as the discharge current and voltage waveforms vary strongly with the magnetic field strength. We here discuss ways to limit the detrimental effect of target erosion on the film deposition process by choosing an appropriate mode of operation for the discharge. The goal is to limit variations of two principal flux parameters, the deposition rate and the ionized flux fraction. As an outcome of the discussion, we recommend operating HiPIMS discharges by maintaining the peak discharge current constant., Funding Agencies|Free State of Saxony; European Regional Development Fund [100336119]; Icelandic Research Fund [196141]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

The ionization region model (IRM) is applied to model high power impulse magnetron sputtering (HiPIMS) discharges with a Cu target. We apply the model to three discharges that were experimentally explored in the past, or applied to deposit thin copper films, with the aim to quantify internal plasma process parameters and thereby understand how these discharges differ from each other. The temporal variation of the various neutral and ionic species, the electron density and temperature, as well as internal discharge parameters, such as the ionization probability, back attraction probability, and ionized flux fraction of the sputtered species, are determined. We demonstrate that the Cu+ ions dominate the total ion current to the target surface and that all the discharges are dominated by self-sputter recycling to reach high discharge currents. Furthermore, the ion flux into the diffusion region is dominated by Cu+ ions, which represents roughly 80% of the total ion flux onto the substrate, in agreement with experimental findings. For the discharges operated with peak discharge current densities in the range 0.9 - 1.3 A cm-2, the ion back-attraction probability of the Cu+ ion (beta t) is low compared to previously investigated HiPIMS discharges, or in the range 44 - 50%, while the ionization probability (alpha t) is in the range 61 - 69%, and the ionized flux fraction is in the range 32 - 40%. It is, furthermore, found that operating these Cu HiPIMS discharges at lower working gas pressures (in the present case around 0.5 Pa) is beneficial in terms of optimizing ionization of the sputtered species., Funding Agencies|Icelandic Research Fund [196141]; Swedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Free State of Saxony; European Regional Development Fund [100336119]; Evatec AG

The magnetic field is a key feature that distinguishes magnetron sputtering from simple diode sputtering. It effectively increases the residence time of electrons close to the cathode surface and by that increases the energy efficiency of the discharge. This becomes apparent in high power impulse magnetron sputtering (HiPIMS) discharges, as small changes in the magnetic field can result in large variations in the discharge characteristics, notably the peak discharge current and/or the discharge voltage during a pulse. Here, we analyze the influence of the magnetic field on the electron density and temperature, how the discharge voltage is split between the cathode sheath and the ionization region, and the electron heating mechanism in a HiPIMS discharge. We relate the results to the energy efficiency of the discharge and discuss them in terms of the probability of target species ionization. The energy efficiency of the discharge is related to the fraction of pulse power absorbed by the electrons. Ohmic heating of electrons in the ionization region leads to higher energy efficiency than electron energization in the sheath. We find that the electron density and ionization probability of the sputtered species depend largely on the discharge current. The results suggest ways to adjust electron density and electron temperature using the discharge current and the magnetic field, respectively, and how they influence the ionization probability., Funding Agencies|Free State of Saxony; European Regional Development FundEuropean Commission [100336119]; Icelandic Research Fund [196141]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

The ionization region model (IRM) is applied to model a high power impulse magnetron sputtering discharge in argon with a graphite target. Using the IRM, the temporal variation of the various species and the average electron energy, as well as internal parameters such as the ionization probability, back-attraction probability, and the ionized flux fraction of the sputtered species, is determined. It is found that thedischarge develops into working gas recycling and most of the discharge current at the cathode target surface is composed of Ar+ ions, which constitute over 90% of the discharge current, while the contribution of the C+ ions is always small (<5%), even for peak current densities close to 3 A cm(-2). For the target species, the time-averaged ionization probability is low, or 13-27%, the ion back-attraction probability during the pulse is high (>92%), and the ionized flux fraction is about 2%. It is concluded that in the operation range studied here it is a challenge to ionize carbon atoms, that are sputtered off of a graphite target in a magnetron sputtering discharge, when depositing amorphous carbon films., Funding Agencies|Free State of Saxony; European Regional Development FundEuropean Commission [100336119]; Icelandic Research Fund [196141]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 201804139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

We report on the effect of varying the substrate bias on the morphology, composition, structural, and electrical properties of vanadium nitride films deposited by high power impulse magnetron sputtering (HiPIMS). The optimum substrate bias is found to be −50 V, which gives the highest film density, the lowest electrical resistivity, and the lowest surface roughness at the highest deposition rate. We demonstrate how increasing the substrate bias voltage leads to a highly textured film. The preferred orientation of the film changes from (111) to (200) as the substrate bias voltage is increased. An X-ray pole scan shows that the (111) plane grows parallel to the SiO2 substrate when the substrate is grounded while it is gradually replaced by the (200) plane as the substrate bias voltage is increased up to −200 V. The lowest electrical resistivity is measured as 48.4 μΩ cm for the VN film deposited under substrate bias of −50 V. This is among the lowest room temperature values that have been reported for a VN film. We found that the nitrogen concentration presents a decline by 6.5 percentage points as the substrate bias is changed from ground to −200 V., Export Date: 22 October 2018; Article; CODEN: THSFA; Correspondence Address: Gudmundsson, J.T.; Science Institute, University of Iceland, Dunhaga 3, IS-107, Iceland; email: tumi@hi.is; Funding details: 2014-04876, VINNOVA; Funding details: 130029; Funding text: The authors are thankful to Dr. Arni S. Ingason for assistance with the interpretation of the polar figure data. This work was partially supported by the University of Iceland Research Fund for Doctoral Students, the Icelandic Research Fund Grant No. 130029 , and the Swedish Government Agency for Innovation Systems (VINNOVA) contract no. 2014-04876 .

The oxygen dynamics in a reactive Ar/O-2 high power impulse magnetron sputtering discharge has been studied using a new reactive ionization region model. The aim has been to identify the dominating physical and chemical reactions in the plasma and on the surfaces of the reactor affecting the oxygen plasma chemistry. We explore the temporal evolution of the density of the ground state oxygen molecule O-2(X-1 Sigma(-)(g)), the singlet metastable oxygen molecules O-2(a(1)Delta(g)) and O-2(b(1) Sigma(g)), the oxygen atom in the ground state O(P-3), the metastable oxygen atom O(D-1), the positive ions O-2(+) and O+, and the negative ion O-. We furthermore investigate the reaction rates for the gain and loss of these species. The density of atomic oxygen increases significantly as we move from the metal mode to the transition mode, and finally into the compound (poisoned) mode. The main gain rate responsible for the increase is sputtering of atomic oxygen from the oxidized target. Both in the poisoned mode and in the transition mode, sputtering makes up more than 80% of the total gain rate for atomic oxygen. We also investigate the possibility of depositing stoichiometric TiO2 in the transition mode. Published by AIP Publishing., Funding Agencies|Icelandic Research Fund [130029]; Swedish Government Agency [2014-04876]