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Here, a photocatalytic asymmetric multicomponent cascade Minisci reaction of β‐carbolines with enamides and diazo compounds is reported, enabling an effective enantioselective radical C─H functionalization of β‐carbolines with high yields and enantioselectivity (up to 83% yield and 95% ee). This enantioselective multicomponent Minisci protocol exhibits step economy, high chemo‐/enantio‐selective control, and good functional group tolerance, allowing access to a variety of valuable chiral β‐carbolines. Notably, diazo compounds are suitable radical precursors in enantioselective cascade radical reactions. Moreover, the efficiency and practicality of this approach are demonstrated by the asymmetric synthesis of bioactive compounds and natural products. [ABSTRACT FROM AUTHOR]

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Chiral cyclopentadienyl‐rhodium(III) CpxRh(III) catalysis has been demonstrated to be competent for catalyzing highly enantioselective aziridination of challenging unactivated terminal alkenes and nitrene sources. The chiral CpxRh(III) catalysis system exhibited outstanding catalytic performance and wide functional group tolerance, yielding synthetically important and highly valuable chiral aziridines with good to excellent yields and enantioselectivities (up to 99 % yield, 93 % ee). This protocol presents a novel and effective strategy for synthesizing enantioenriched aziridines from simple alkenes. Various transformations were performed on the aziridine products, illustrating the versatility and synthetic potential of this protocol for constructing highly functionalized compounds. [ABSTRACT FROM AUTHOR]

In this study, environmentally friendly, low cost, and easy to synthesize InSn and VSn co-doped SnSe materials was designed and prepared via vacuum melting and spark plasma sintering technology, which avoids the shortcomings of high-performance Pb, Ge, and Na-doped SnSe samples. InSn and VSn, doping achieved appropriate bandgap (Eg) and energy band degeneracy (NV) from the valence and conduction band, obtaining the highest electrical conductivity of 4726 S m−1 at 773 K. The impurity state controls the carrier transport process below 573 K, while Eg and NV control the process above 573 K. InSn and VSn doping induces quality fluctuation and local strain, which decreases the lattice thermal conductivity. Owing to the higher power factor and low lattice thermal conductivity, the ZT value of the Sn0.985In0.01Se sample was 1.3 at 773 K. Dual regulation of the valence and conduction band provides a new idea for adjusting the transport behavior of semiconductors. [ABSTRACT FROM AUTHOR]