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10 results on '"Gu, Jiangjiang J."'

1. Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Author

Gu, Jiangjiang J., Wang, Xinwei, Wu, Heng, Gordon, Roy G., and Ye, Peide D.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors., Comment: to appear in IEEE Electron Device Letters (3 pages, 5 figures)

Published
2013
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2. Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Author

Gu, Jiangjiang J., Wu, Heng, Liu, Yiqun, Neal, Adam T., Gordon, Roy G., and Ye, Peide D.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart., Comment: 3 pages, 4 figures, to appear in IEEE Electron Device Letters

Published
2012
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9. Sub-100nm Non-Planar 3D InGaAs MOSFETs: Fabrication and Characterization

Author

Gu, Jiangjiang J. and Ye, Peide D.

Abstract

InGaAs MOSFETs have been considered promising candidate for post-Si logic devices beyond 14nm technology node. To meet the increasing demand in electrostatic control at sub-100nm channel lengths, non-planar 3D structures have been introduced to the fabrication of InGaAs MOSFETs. In this paper, the fabrication and characterization of various non-planar 3D InGaAs MOSFETs have been demonstrated and summarized, including InGaAs heterostructure FinFETs, InGaAs-on-nothing nanowire MOSFETs, and InGaAs gate-all-around nanowire MOSFETs. It is shown that the implementation of 3D structure greatly reduces short channel effect and improves scalability of InGaAs MOSFETs. The gate-all-around nanowire structure has been fabricated by a novel top-down approach for the first time and is found to offer great scalability down to at least 50nm channel length with good transport property, making InGaAs gate-all-around nanowire MOSFETs strong candidate for ultimately scaled III-V logic technology.

Published
2012

10. Size-Dependent-Transport Study of \In0.53 \Ga0.47\As Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion.

Author

Gu, Jiangjiang J., Wu, Heng, Liu, Yiqun, Neal, Adam T., Gordon, Roy G., and Ye, Peide D.

Subjects
TRANSPORT theory, ARSENIDES, GATE array circuits, NANOWIRES, METAL oxide semiconductor field-effect transistors, QUANTUM theory, MICROFABRICATION, NANOSCIENCE
Abstract

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart. [ABSTRACT FROM AUTHOR]

Published
2012
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