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In the strive for energy efficient computing, many different neuromorphic computing and engineering schemes have been introduced. Nanoparticle networks (NPNs) at the percolation threshold have been established as one of the promising candidates, e.g., for reservoir computing because among other useful properties they show self‐organization and brain‐like avalanche dynamics. The dynamic resistance changes trace back to spatio‐temporal reconfigurations in the connectivity upon resistive switching in distributed memristive nano‐junctions and nano‐gaps between neighboring nanoparticles. Until now, however, there has not yet been any direct imaging or monitoring of current paths in NPN. In this study, an NPN comprising of Ag/CxOyHz core/shell and Ag nanoparticles at the percolation threshold is reported. It is shown that this NPN is within a critical regime, exhibiting avalanche dynamics. To monitor in situ the evolving current paths in this NPN, active voltage contrast and resistive contrast imaging are used complementarily. Including simulations, the results provide experimental insight toward understanding the complex current response of the memristive NPN. As such, this study paves the way toward an experimental characterization of dynamic reorganizations in current paths inside NPN, which is highly relevant for validating and improving simulations and finally establishing a deeper understanding of switching dynamics in NPNs. [ABSTRACT FROM AUTHOR]

Memristive devices are under intense development as non‐volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel computing primitives. In this respect, interface‐based memristive devices are promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming to replicate the information processing of nervous systems. A device composed of Nb/NbOx/Al2O3/HfO2/Au that shows promising features like analog switching, no electro‐forming, and high current‐voltage non‐linearity is reported. Synchrotron‐based X‐ray photoelectron spectroscopy and depth‐dependent hard X‐ray photoelectron spectroscopy are used to probe in situ different resistance states and thus the origin of memristive switching. Spectroscopic evidence for memristive switching based on the charge state of electron traps within HfO2 is found. Electron energy loss spectroscopy and transmission electron microscopy support the analysis. A device model is proposed that considers a two‐terminal metal–insulator–semiconductor structure in which traps within the insulator (HfO2/Al2O3) modulate the space charge region within the semiconductor (NbOx) and, thereby, the overall resistance. The experimental findings are in line with impedance spectroscopy data reported in the companion paper (Marquardt et al). Both works complement one another to derive a detailed device model, which helps to engineer device performance and integrate devices into silicon technology. [ABSTRACT FROM AUTHOR]

The layered compound Ni2P2S6 was electrochemically characterized for application as an anode material in sodium-ion batteries (SIBs). A high reversible capacity of 621 mA h g−1 at 1 A g−1 was achieved after 190 cycles. The investigation of the complex reaction mechanism of the conversion reaction was performed applying complementary techniques including X-ray powder diffraction, pair distribution function analysis, X-ray absorption spectroscopy, 19F/23Na/31P MAS NMR, TEM and nano-EDX. The results highlight that Na uptake for up to 5 Na per formula unit (f.u.) led to reduction of Ni2+ to metallic Ni nanoparticles and concomitant formation of an intermediate compound Na4P2S6. Increasing the Na content to 12 Na per f.u. generates nanocrystalline Na2S, which is accompanied by the loss of the long-range order of the pristine sample. In the completely discharged state elemental Ni and Na2S are present, but in contrast to literature reports, no evidence for the formation of NaxP phases was found. During the charge process, Ni3S2 is formed upon the release of ∼11.7 Na per f.u. [ABSTRACT FROM AUTHOR]

Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible nanoscale devices. Here, we report on epitaxial ferroelectric thin films of doped HfO 2 deposited on La 0.7 Sr 0.3 MnO 3 -buffered SrTiO 3 substrates, La 0.7 Sr 0.3 MnO 3 SrTiO 3 -buffered Si (100) wafers, and trigonal Al 2 O 3 substrates. The investigated films appear to consist of four domains in a rhombohedral phase for films deposited on La 0.7 Sr 0.3 MnO 3 -buffered SrTiO 3 substrates and two domains for those deposited on sapphire. These findings are supported by extensive transmission electron microscopy characterization of the investigated films. The doped hafnia films show ferroelectric behavior with a remanent polarization up to 25 μC/cm 2 and they do not require wake-up cycling to reach the polarization, unlike the reported polycrystalline orthorhombic ferroelectric hafnia films.

In this study, a strategy to prepare CuO/Cu 2 O/Cu microwires that are fully covered by a nanowire (NW) network using a simple thermal-oxidation process is developed. The CuO/Cu 2 O/Cu microwires are fixed on Au/Cr pads with Cu microparticles. After thermal annealing at 425 °C, these CuO/Cu 2 O/Cu microwires are used as room-temperature 2-propanol sensors. These sensors show different dominating gas responses with operating temperatures, e.g., higher sensitivity to ethanol at 175 °C, higher sensitivity to 2-propanol at room temperature and 225 °C, and higher sensitivity to hydrogen gas at ∼300 °C. In this context, we propose the sensing mechanism of this three-in-one sensor based on CuO/Cu 2 O/Cu. X-ray diffraction (XRD) studies reveal that the annealing time during oxidation affects the chemical appearance of the sensor, while the intensity of reflections proves that for samples oxidized at 425 °C for 1 h the dominating phase is Cu 2 O, whereas upon further increasing the annealing duration up to 5 h, the CuO phase becomes dominant. The crystal structures of the Cu 2 O-shell/Cu-core and the CuO NW networks on the surface were confirmed with a transmission electron microscope (TEM), high-resolution TEM (HRTEM), and selected area electron diffraction (SAED), where (HR)TEM micrographs reveal the monoclinic CuO phase. Density functional theory (DFT) calculations bring valuable inputs to the interactions of the different gas molecules with the most stable top surface of CuO, revealing strong binding, electronic band-gap changes, and charge transfer due to the gas molecule interactions with the top surface. This research shows the importance of the nonplanar CuO/Cu 2 O layered heterostructure as a bright nanomaterial for the detection of various gases, controlled by the working temperature, and the insight presented here will be of significant value in the fabrication of new p-type sensing devices through simple nanotechnology.

In recent years, heterogeneous photocatalysis has gained enormous interest due to increasing concerns about environmental pollution. Here we propose a facile approach to synthesize cauliflower-like CeO 2 -TiO 2 hybrid structures by magnetron reactive sputtering, exhibiting an extremely high photocatalytic activity. While heating and air-quenching of the sputter deposited TiO 2 thin film (first layer) triggered the formation of a nanocrack network, the second heat-treatment led to transformation of the CeO 2 film (second layer) into CeO 2 nanoclusters (NCs). We attribute the resulting high photocatalytic activity to the confined structure of the CeO 2 NCs and the CeO 2 -TiO 2 interface, which allows Ce 3+ /Ce 4+ dynamic shifting. In addition to high photocatalytic activity in an aqueous medium, the prepared CeO 2 -TiO 2 hybrid structures exhibited significant self-cleaning properties in air (non-aqueous).