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We report the fabrication of Hf0.5Zr0.5O2 (HZO) based ferroelectric memory crosspoints using a complementary metal-oxide-semiconductor-compatible damascene process. In this work, we compared 12 and 56 µ m2 crosspoint devices with the 0.02 mm2 round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition on planarized bottom electrodes. The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm2 benchmark, while all the devices reached a 2Pr value of ∼50 µ C cm−2 after 105 cycles with 3 V/10 µ s squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching experiments were performed, revealing a switching time <170 ns for our 12 and 56 µ m2 devices, while it remained in the µ s range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed. [ABSTRACT FROM AUTHOR]

A novel reprogrammable optical phase array (ROPA) device is presented as a reconfigurable electro-optic element. One specific application of the ROPA, a 1 x 6 electro-optic space switch, is fully described. Switching angles are within 2[degrees], and switching is achieved through a complementary metal-oxide semiconductor (CMOS) controlled, diffraction based, optical phase array in a bulk BaTi[O.sub.3] crystal. The crystal is flip-chipped to the CMOS chip, creating a compact fully integrated device. The design, optical simulation, and fabrication of the device are described, and preliminary experimental results are presented. OCIS codes: 230.2090, 050.5080.

We propose two novel electro-optic (EO) deflectors based on two new nonrectangular geometries: the parabolic and the half-horn configurations. These devices not only provide excellent deflection angles, but also have the potential to build nonblocking 2 x 2 optical switches. A deflector figure of merit is defined, and comparisons with existing EO deflectors are given. Devices fabricated in LiTa[O.sub.3] demonstrate 3 dB of average insertion loss and 3[degrees] deflection angles. These results represent the best deflection performances to our knowledge reported to date for bulk EO deflectors. OCIS codes: 230.0230, 230.2090.

We report the fabrication of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric memory crosspoints using a complementary metal-oxide-semiconductor-compatible damascene process. In this work, we compared 12 and 56 µ m 2 crosspoint devices with the 0.02 mm 2 round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition on planarized bottom electrodes. The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm 2 benchmark, while all the devices reached a 2P r value of ∼50 µ C cm -2 after 10 5 cycles with 3 V/10 µ s squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching experiments were performed, revealing a switching time <170 ns for our 12 and 56 µ m 2 devices, while it remained in the µ s range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed., (Creative Commons Attribution license.)

We propose a method to fabricate interference filters using Plasma Enhanced Chemical Vapor Deposition (PECVD) to reduce blue and near-infrared wavelengths that are inherent to LED lighting, but that have a negative impact on human health and the environment respectively. We developed a Si-rich silicon nitride (Si-rich Si x N y ) material, with a very high refractive index, a high extinction coefficient in the blue range and a very low extinction coefficient in the rest of the spectrum. We combined this Si-rich Si x N y with silicon oxide (SiO x ) to realize an LED interference filter. The use of a material with a selective absorbance and high refractive index allows a simple fabrication process of the filter composed of six layers only, even for a complex spectral response. Moreover, the filter response is uniform and tolerant to incidence angle variation. With this work, we demonstrate the high potential of PECVD technique for the fabrication of low cost and reproducible interference filters that could be used in various applications.