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130 results on '"Grisard, Arnaud"'

1. Fabrication and characterization of Transverse Orientation Patterned Gallium Phosphide waveguides for high efficiency second harmonic generation

Author

Lemoine, Antoine, Corre, Brieg Le, Morice, Lise, Harouri, Abdelmounaïm, Gratiet, Luc Le, Beaudoin, Grégoire, Pouliquen, Julie Le, Tavernier, Karine, Grisard, Arnaud, Combrié, Sylvain, Gérard, Bruno, Cornet, Charles, Dumeige, Yannick, Pantzas, Konstantinos, Sagnes, Isabelle, and Léger, Yoan

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

Achieving high conversion efficiencies in second-order nonlinear optical processes is a key challenge in integrated photonics for both classical and quantum applications. This paper presents the first demonstration of Transverse Orientation-Patterned gallium phosphide (TOP-GaP) waveguides showing high-efficiency second harmonic generation. In such devices, first order modal phase matching is unlocked and optimized through the inversion of the nonlinear susceptibility along the vertical direction. We discuss here the theory behind modal phase matching in TOP structures, describe the fabrication process, and present linear and nonlinear characterizations of the TOP-GaP waveguides.

Published
2024

2. Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

Author

Pantzas, Konstantinos, Combrié, Sylvain, Bailly, Myriam, Mandouze, Raphaël, Talenti, Francesco Rinaldi, Harouri, Abdelmounaim, Gérard, Bruno, Beaudoin, Grégoire, Gratiet, Luc Le, Patriarche, Gilles, de Rossi, Alfredo, Léger, Yoan, Sagnes, Isabelle, and Grisard, Arnaud

Subjects
Physics - Optics, Condensed Matter - Materials Science
Abstract

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide., Comment: 21 pages, 6 figures

Published
2022

3. Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates

Author

Pantzas, Konstantinos, Beaudoin, Grégoire, Bailly, Myriam, Martin, Aude, Grisard, Arnaud, Dolfi, Daniel, Mauguin, Olivia, Largeau, Ludovic, Sagnes, Isabelle, and Patriarche, Gilles

Subjects
Condensed Matter - Materials Science
Abstract

The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template., Comment: 6 figures

Published
2021
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4. GaAs-chip-based mid-infrared supercontinuum generation

Author

Granger, Geoffroy, Bailly, Myriam, Delahaye, Hugo, Jimenez, Cristian, Tiliouine, Idris, Leventoux, Yann, Orlianges, Jean-Christophe, Couderc, Vincent, Gérard, Bruno, Becheker, Rezki, Idlahcen, Said, Godin, Thomas, Hideur, Ammar, Grisard, Arnaud, Lallier, Eric, and Février, Sébastien

Published
2023
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5. Near-infrared to visible upconversion imaging using a broadband pump laser

Author

Demur, Romain, Garioud, Renaud, Grisard, Arnaud, Lallier, Eric, Leviandier, Luc, Morvan, LoÏc, Treps, Nicolas, and Fabre, Claude

Subjects
Physics - Optics
Abstract

We present an upconversion imaging experiment from the near-infrared to the visible spectrum. Using a dedicated broadband pump laser to increase the number of resolved elements converted in the image we obtain up to 56x64 spatial elements with a 2.7 nm wide pump spectrum, more than 10 times the number of elements accessible with a narrowband laser. Results in terms of field of view, resolution and conversion efficiency are in good agreement with simulations. The computed sensitivity of our experiment favorably compares with direct InGaAs camera detection.

Published
2018
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6. Robust, frequency-stable and accurate mid-IR laser spectrometer based on frequency comb metrology of quantum cascade lasers up-converted in orientation-patterned GaAs

Author

Hansen, Michael G., Ernsting, Ingo, Vasilyev, Sergey V., Grisard, Arnaud, Lallier, Eric, Gérard, Bruno, and Schiller, Stephan

Subjects
Physics - Optics
Abstract

We demonstrate a robust and simple method for measurement, stabilization and tuning of the frequency of cw mid-infrared (MIR) lasers, in particular of quantum cascade lasers. The proof of principle is performed with a quantum cascade laser at 5.4 \mu m, which is upconverted to 1.2 \mu m by sum-frequency generation in orientation-patterned GaAs with the output of a standard high-power cw 1.5 \mu m fiber laser. Both the 1.2 \mu m and the 1.5 \mu m waves are measured by a standard Er:fiber frequency comb. Frequency measurement at the 100 kHz-level, stabilization to sub-10 kHz level, controlled frequency tuning and long-term stability are demonstrated.

Published
2013
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7. Contributors

Author

Ajay, A., primary, Al-Saymari, F., additional, Arkani, R., additional, Broderick, C.A., additional, Carrington, P.J., additional, Cerutti, Laurent, additional, Chi, Chaodan, additional, Delga, Alexandre, additional, Du, Wei, additional, Eales, Timothy D., additional, Gérard, Bruno, additional, Grisard, Arnaud, additional, Kaspi, Ron, additional, Krier, A., additional, Krier, S.E., additional, Kudrawiec, Robert, additional, De La Mata, M., additional, Lallier, Eric, additional, Lambrecht, Armin, additional, Lulla, K.J., additional, Lyakh, Arkadiy, additional, MacGregor, C., additional, Marko, Igor P., additional, Marshall, A.R.J., additional, Masselink, W.Ted, additional, Matsuoka, Yohei, additional, Molina, S.I., additional, Monroy, E., additional, O’Reilly, E., additional, Ou, Xin, additional, Patimisco, Pietro, additional, Pavanello, Fabio, additional, Qi, L., additional, Razeghi, Manijeh, additional, Repiso, E., additional, Roelkens, Günther, additional, Rogalski, A., additional, Schmitt, Katrin, additional, Semtsiv, Mykhaylo P., additional, Sorel, M., additional, Spagnolo, Vincenzo, additional, Steenbergen, Elizabeth H., additional, Steer, M., additional, Suttinger, Matthew, additional, Sweeney, Stephen J., additional, Tittel, Frank K., additional, Tournié, Eric, additional, Vicet, Aurore, additional, Wang, Ruijun, additional, Wang, Shumin, additional, Yu, Shui-Qing, additional, Zhang, Liping, additional, and Zhang, Xiaolei, additional

Published
2020
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11. Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping

Author

Manavaimaran, Balaji, Strömberg, Axel, Tassev, Vladimir L., Vangala, Shivashankar R., Bailly, Myriam, Grisard, Arnaud, Gerard, Bruno, Lourdudoss, Sebastian, Sun, Yan-Ting, Manavaimaran, Balaji, Strömberg, Axel, Tassev, Vladimir L., Vangala, Shivashankar R., Bailly, Myriam, Grisard, Arnaud, Gerard, Bruno, Lourdudoss, Sebastian, and Sun, Yan-Ting

Abstract

Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 mu m/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors' knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to i, QC 20230316

Published
2023
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12. Orientation-patterned gallium phosphide for integrated nonlinear photonics.

Author

Pantzas, Konstantinos, Combrie, Sylvain, Leger, Yoan, Beaudoin, Grégoire, Le Gratiet, Luc, Harouri, Abdel mounaim, Gerard, Bruno, Patriarche, Gilles, Sagnes, Isabelle, and Grisard, Arnaud

Subjects
GALLIUM phosphide, OPTICAL losses, HYDROGEN evolution reactions
Abstract

Gallium phosphide has long held promise for integrated nonlinear photonics, owing to its high non-linear figure of merit, broad transparency and compatibility with silicon. The recent development of orientation patterning in gallium phosphide has now brought this promise within grasp. Current research efforts are focused on demonstrating and evaluating a variety of second and third-order non-linear processes on the platform, reducing optical losses, and investigating integration with Si. [ABSTRACT FROM AUTHOR]

Published
2023
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13. Mid-IR supercontinuum in gallium arsenide waveguide

Author

Granger, Geoffroy, primary, Bailly, Myriam, additional, Delahaye, Hugo, additional, Jimenez, Cristian, additional, Tiliouine, Idris, additional, Leventoux, Yann, additional, Orlianges, Jean-Christophe, additional, Couderc, Vincent, additional, Gérard, Bruno, additional, Becheker, Rezki, additional, Idlahcen, Said, additional, Godin, Thomas, additional, Hideur, Ammar, additional, Grisard, Arnaud, additional, Lallier, Eric, additional, and Fevrier, Sebastien, additional

Published
2023
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18. Quasi-Phase Matched Second Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides

Author

Pantzas, Konstantinos, primary, Combrié, Sylvain, additional, Bailly, Myriam, additional, Mandouze, Raphaël, additional, Talenti, Francesco, additional, Harouri, Abdelmounaim, additional, Gérard, Bruno, additional, Beaudoin, Grégoire, additional, LeGratiet, Luc, additional, Patriarche, Gilles, additional, De Rossi, Alfredo, additional, Léger, Yoan, additional, Sagnes, Isabelle, additional, and Grisard, Arnaud, additional

Published
2022
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19. Near-infrared active polarimetric and multispectral laboratory demonstrator for target detection

Author

Alouini, Mehdi, Goudail, Francois, Grisard, Arnaud, Bourderionnet, Jerome, Dolfi, Daniel, Beniere, Arnaud, Baarstad, Ivar, Loke, Trond, Kaspersen, Peter, Normandin, Xavier, and Berginc, Gerard

Subjects
Polariscope -- Research, Near infrared spectroscopy -- Methods, Image processing -- Methods, Astronomy, Physics
Abstract

We report on the design and exploitation of a real-field laboratory demonstrator combining active polarimetric and multispectral functions. Its building blocks, including a multiwavelength pulsed optical parametric oscillator at the emission side and a hyperspectral imager with polarimetric capability at the reception side, are described. The results obtained with this demonstrator are illustrated on some examples and discussed. In particular it is found that good detection performances rely on joint use of intensity and polarimetric images, with these images exhibiting complementary signatures in most cases. OCIS codes: 260.5430, 100.2960, 030.4280, 290.5880.

Published
2009

24. Single-frequency Tm:YAP laser tunable between 1.94 and 1.96 µm for the generation of LWIR radiation

Author

Berthomé, Quentin, Grisard, Arnaud, Faure, Basile, Souhaité, Grégoire, Lallier, Eric, Melkonian, Jean-Michel, Godard, Antoine, Teem photonics (TEEM PHOTONICS), Teem photonics, DPHY, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, Thales Research and Technology [Palaiseau], THALES, DPHY, ONERA, Université Paris Saclay (COmUE) [Palaiseau], and ONERA-Université Paris Saclay (COmUE)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], SINGLE LONGITUDINAL MODE, NANOSECOND, LASER À DÉCLENCHEMENT ACTIF, Physics::Optics, MIDDLE INFRARED, LASER, LASER MONOMODE, Physics::Atomic Physics, ACTIVE Q-SWITCHING, INFRAROUGE MOYEN, NANOSECONDE
Abstract

International audience; A pulsed, single longitudinal mode, wavelength-tunable Tm:YAP laser is reported. We demonstrate 1 kHz stable operation with 270 μJ, 50 ns pulses and a spectrum linewidth narrowed below 4 pm (FWHM) close to the Fourier transform limit with a volume Bragg grating and a YAG etalon. The output wavelength was tuned from 1940 to 1960 nm owing to a transverse chirp of the period of the Bragg grating.

Published
2020

25. Compact tunable laser source emitting in the LWIR for standoff gas sensing

Author

Favier, Marine, Faure, Basile, Souhaité, Grégoire, Melkonian, Jean-Michel, Godard, Antoine, Raybaut, Myriam, Grisard, Arnaud, Lallier, Eric, Teem photonics (TEEM PHOTONICS), Teem photonics, DPHY, ONERA, Université Paris Saclay (COmUE) [Palaiseau], ONERA-Université Paris Saclay (COmUE), Thales Research and Technology [Palaiseau], THALES, DPHY, ONERA, Université Paris Saclay [Palaiseau], and ONERA-Université Paris-Saclay

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], NANOSECOND, LASER, LASER MONOMODE, SINGLE MODE, INFRAROUGE LOINTAIN, NANOSECONDE, LONG INFRARED, OPTICAL PARAMETRIC OSCILLATION, OSCILLATEUR PARAMETRIQUE OPTIQUE
Abstract

International audience; Tunable coherent sources emitting in the Long Wave Infra Red (LWIR), between 7 and 14 µm can be used in defense application such as standoff detection of hazardous gas and chemical warfare agents. In a previous ANR/DGA project called MUSTARD, we demonstrated, in the laboratory, a single longitudinal mode optical parametric oscillator (OPO) emitting in the 8-11 µm domain. This OPO used a quasi-phase-matched (QPM) GaAs crystal, pumped by a Tm:YAP microlaser [1] [2]. Now we present the development, as part of the DGA SPICE project, of a compact (~600 cm² footprint) and robust industrial prototype (Figure 1) based on the same architecture including an original setup for real time measurement of the emitted wavelength.

Published
2020

26. Ferroelectric integrated optics: Recent developments

Author

Grisard, Arnaud, Lallier, Eric, Garry, Guy, and Aubert, Pascal

Subjects
Erbium -- Usage, Lithium -- Usage, Rare earth lasers -- Usage, Quantum electronics -- Observations, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The implementation of high-speed electrooptic components with low drive power is reported. A spectroscopic investigation of neodymium and erbium-doped lithium niobate is described. Nd:LiNbOsub3 and Nd:MgO:LiNbOsub3 crystals were characterized. Rare-earth-doped device fabrication and characterization is discussed.

Published
1997

27. Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications

Author

Strömberg, Axel, Omanakuttan, Giriprasanth, Mu, Tangjie, Natesan, Pooja Vardhini, Tofa, Tajka Syeed, Bailly, Myriam, Grisard, Arnaud, Gérard, Bruno, Jang, Hoon, Pasiskevicius, Valdas, Laurell, Fredrik, Lourdudoss, Sebastian, Sun, Yan-Ting, Strömberg, Axel, Omanakuttan, Giriprasanth, Mu, Tangjie, Natesan, Pooja Vardhini, Tofa, Tajka Syeed, Bailly, Myriam, Grisard, Arnaud, Gérard, Bruno, Jang, Hoon, Pasiskevicius, Valdas, Laurell, Fredrik, Lourdudoss, Sebastian, and Sun, Yan-Ting

Abstract

Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two‐photon absorption properties of GaP with the matured processing technologies and higher‐quality substrates afforded by GaAs. First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [-110]‐oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP‐GaP on OP‐GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP‐GaP on OP‐GaAs is studied. High OP‐GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h−1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi‐insulating GaAs is studied by terahertz time‐domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP‐GaP growth on OP‐GaAs for frequency conversion by quasi‐phase‐matching in the mid‐infrared and terahertz regions., QC 20191111

Published
2020
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29. Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Author

Strömberg, Axel, primary, Omanakuttan, Giriprasanth, additional, Mu, Tangjie, additional, Natesan, Pooja Vardhini, additional, Tofa, Tajka Syeed, additional, Bailly, Myriam, additional, Grisard, Arnaud, additional, Gérard, Bruno, additional, Jang, Hoon, additional, Pasiskevicius, Valdas, additional, Laurell, Fredrik, additional, Lourdudoss, Sebastian, additional, and Sun, Yan-Ting, additional

Published
2019
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30. Development of Orientation-Patterned GaP Growth on GaAs for Nonlinear Frequency Conversion

Author

Stromberg, Axel, primary, Laurell, Fredrik, additional, Lourdudoss, Sebastian, additional, Sun, Yan-Ting, additional, Omanakuttan, Giriprasanth, additional, Jang, Hoon, additional, Natesan, Pooja V., additional, Tofa, Tajkia S., additional, Bailly, Myriam, additional, Grisard, Arnaud, additional, Gerard, Bruno, additional, and Pasiskevicius, Valdas, additional

Published
2019
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32. Development of Orientation-Patterened GaP Growth on GAas for Nonlinear Frequency Conversion

Author

Strömberg, Axel, Omanakuttan, Giriprasanth, Jang, Hoon, Natesan, Pooja Vardhini, Tofa, Tajkia Syeed, Bailly, Myriam, Grisard, Arnaud, Gerard, Bruno, Pasiskevicius, Valdas, Laurell, Fredrik, Lourdudoss, Sebastian, Sun, Yan-Ting, Strömberg, Axel, Omanakuttan, Giriprasanth, Jang, Hoon, Natesan, Pooja Vardhini, Tofa, Tajkia Syeed, Bailly, Myriam, Grisard, Arnaud, Gerard, Bruno, Pasiskevicius, Valdas, Laurell, Fredrik, Lourdudoss, Sebastian, and Sun, Yan-Ting

Abstract

QC 20220301Conference ISBN: 978-1-7281-0469-0

Published
2019

35. 100 W-level peak power laser system tunable in the LWIR applied to detection of persistent chemical agents

Author

Piatkowski, Tadeusz, primary, Brygo, François, primary, Awanzino, Cédric, primary, Wilsenack, Frank, primary, Gutty, Francois, primary, Grisard, Arnaud, primary, Larat, Christian, primary, Papillon, Dominique, primary, Schwarz, Muriel, primary, Lallier, Eric, primary, Tholl, Hans D., primary, Münzhuber, Franz, primary, Kunz, Jürgen, primary, Raab, Michael, primary, Rattunde, Marcel, primary, Hugger, Stefan, primary, and Kastek, Mariusz, primary

Published
2018
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37. First results of a QCL-OPA based standoff system, for detecting hazardous substances in the IR-fingerprint domain

Author

Wilsenack, Frank, primary, Lorenzen, Arne, primary, Awanzino, Cédric, primary, Grisard, Arnaud, primary, Larat, Christian, primary, Papillon, Dominique, primary, Lallier, Eric, primary, Tholl, Hans Dieter, primary, Raab, Michael, primary, Brygo, François, primary, Gutty, François, primary, Schwarz, Muriel, primary, Münzhuber, Franz, primary, Kunz, Jürgen, primary, Rattunde, Marcel, primary, Hugger, Stefan, primary, Kastek, Mariusz, primary, and Piatkowski, Tadeusz, primary

Published
2018
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41. 140 W peak power laser system tunable in the LWIR

Author

Gutty, François, primary, Grisard, Arnaud, additional, Larat, Christian, additional, Papillon, Dominique, additional, Schwarz, Muriel, additional, Gerard, Bruno, additional, Ostendorf, Ralf, additional, Rattunde, Marcel, additional, Wagner, Joachim, additional, and Lallier, Eric, additional

Published
2017
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42. 100 W-level peak-power laser system tunable from 8 to 10 μm

Author

Gutty, Francois, primary, Grisard, Arnaud, additional, Larat, Christian, additional, Papillon, Dominique, additional, Schwarz, Muriel, additional, Gerard, Bruno, additional, Ostendorf, Ralf, additional, Rattunde, Marcel, additional, Wagner, Joachim, additional, and Lallier, Eric, additional

Published
2017
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45. High peak-power laser system tuneable from 8 to 10 μm

Author

Gutty, François, primary, Grisard, Arnaud, additional, Larat, Christian, additional, Papillon, Dominique, additional, Schwarz, Muriel, additional, Gérard, Bruno, additional, Ostendorf, Ralf, additional, Wagner, Joachim, additional, and Lallier, Eric, additional

Published
2017
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47. Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide

Author

Donelan, Brenda, primary, Kneis, Christian, additional, Scurria, Giuseppe, additional, Cadier, Benoît, additional, Robin, Thierry, additional, Lallier, Eric, additional, Grisard, Arnaud, additional, Gérard, Bruno, additional, Eichhorn, Marc, additional, and Kieleck, Christelle, additional

Published
2016
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49. Nonlinear diffraction in orientation-patterned semiconductors

Author

Karpinski, Pawel, Chen, Xin, Shvedov, Vladlen, Hnatovsky, Kyrylo (Cyril), Grisard, Arnaud, Lallier, Eric, Luther-Davies, Barry, Krolikowski, Wieslaw, Sheng, Yan, Karpinski, Pawel, Chen, Xin, Shvedov, Vladlen, Hnatovsky, Kyrylo (Cyril), Grisard, Arnaud, Lallier, Eric, Luther-Davies, Barry, Krolikowski, Wieslaw, and Sheng, Yan

Abstract

This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinearˇ Cerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

Published
2015

50. Visualization of the internal structure of orientation-patterned III-V semiconductors

Author

Karpinski, Pawel, Chen, Xin, Shvedov, Vladlen, Hnatovsky, Kyrylo (Cyril), Grisard, Arnaud, Lallier, Eric, Luther-Davies, Barry, Sheng, Yan, Krolikowski, Wieslaw, Karpinski, Pawel, Chen, Xin, Shvedov, Vladlen, Hnatovsky, Kyrylo (Cyril), Grisard, Arnaud, Lallier, Eric, Luther-Davies, Barry, Sheng, Yan, and Krolikowski, Wieslaw

Abstract

We investigate nonlinear diffraction in orientation-patterned semiconductors and identify Čerenkov second harmonic generation in a transverse geometry of interaction. Čerenkov second harmonic allows nondestructive 3D visualization of the internal structure of orientationpatterned semiconductor.

Published
2015

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