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The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a broad range of materials with high sensitivity. Analyzing the foils with Rutherford forward scattering, sputtered Al, Si and P surface densities down to 5 x 10 to the 13th per sq cm with uncertainties of about 20 percent have been measured.

The sputtering of UF4 targets by energetic beams of O-16, F-19, and Cl-35 ions has been investigated for beam energies in the range 0.12 to 1.5 MeV/amu. The sputtering yields, which follow the same trend as the electronic part of the projectile energy loss in the material, are observed to have a strong dependence on the charge state of the incident ions. Data have been taken both in transmission and reflection (0 and 180 deg to the incident beam direction, respectively). Energy spectra of the neutral sputtered particles have been obtained for 5 MeV F-19 ions and for 13 MeV Cl-35 ions; in both cases the spectrum has a Maxwellian form. The data obtained are compared with several models of the high energy sputtering process.

Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).

In this paper recent experimental results on sputtering of UF4 and H2O (ice) by fast heavy ions are reviewed. Measurements have been made of the dependence of the sputtering yield on the incident ion type, charge state, and energy. In the case of UF4, the energy spectra of neutral sputtered particles have been obtained as well. There is a clear dependence of the sputtering yield on the electronic part of the stopping power, and the yield is strongly affected by the charge state of the incident ion, which shows that in the near-surface region from which sputtered particles arise, the charge state of the incident ion has not reached equilibrium. The shape of the energy spectra observed for UF4 targets is that expected from a thermal distribution rather than that of the collision cascade form typical of ordinary sputtering. A model of the sputtering-track registration process that has arisen from these data is shown to provide a framework of understanding the close relationship of these observations to the 'plasma desorption' of marcromolecules.

Because of recent interest in the role played by the thermal properties of materials that exhibit high energy sputtering, Al2O3 and LiNbO3 were sputtered with chlorine ions at energies between 3 MeV and 25 MeV. To detect the sputtered Al and Nb we employ thin carbon catcher foils, which are analyzed with Rutherford scattering in the forward direction. Al surface densities of 10 to the 14th/sq cm and Nb surface densities of 10 to the 13th/sq cm are easily measured. The sputtering yields for both Al2O3 and LiNbO3 increase rapidly with increasing chlorine energy, and the Al and Nb yields are both approximately 0.2 at 20 MeV. Tests for dose, beam current, and contamination effects will be discussed.

The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed.

A velocity spectrum of neutral sputtered particles as well as a low resolution mass spectrum of sputtered molecular ions was measured for 4.74 MeV F-19(+2) incident of UF4. The velocity spectrum is dramatically different from spectra taken with low energy (keV) bombarding ions, and is shown to be consistent with a hot plasma of atoms in thermal equilibrium inside the target. A thermalized ion explosion model is proposed for high energy sputtering which is expected to describe track formation in dielectric materials. The model is shown to be consistent with the observed total sputtering yield and the dependence of the yield on the primary ionization rate of the incident ion.