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1. Magnonic Crystals By Means Of Patterned Ion Implantation

Author

Fassbender, J., Körner, M., Lenz, K., Strache, T., Banholzer, A., Grebin, J., Lindner, J., Barsukov, I., Römer, F., Meckenstock, R., Hemken To Krax, S., Farle, M., McCord, J., Mönch, I., and Mattheis, R.

Subjects
modification, magnetic films, ion irradiation, ion implantation, magnonics, dynamics
Abstract

Ion implantation is a standard process in semiconductor tech¬nology. However, since a doping of metals typically does not have such a tremendous effect as compared to semiconductors ion implantation in metals to achieve a desired electrical, optical or magnetic property is much less explored. A combination of litho-graphy and ion implantation to achieve a lateral ion implantation pattern is a novel route to design and construct artificial materials like photonic or magnonic crystal which rely on the local band gap or spin wave dispersion engineering [1]. The contribution will provide an overview over the different physical mechanisms which allow modifying and tailoring the dynamical magnetic properties, i. e., magnetic damping even in an anisotropic fashion, aiming at the creation of new functional materials. In one example [2] it is demonstrated that the mag¬netic damping parameter in a ferromagnetic/antiferromag¬ne¬tic/ferro¬magnetic trilayer stack can be continuously and spatially varied between two extremal values (see Fig. 1). In a second example [3] the creation of a lateral magnetization pattern by ion implantation gives rise to additional and anisotropic relaxation channels. Potential areas of application are magnonic crystals and band-stop filters in the GHz range. Acknowledgement: This work was supported by Deutsche Forschungsgemeinschaft SFB491, FA 314/3, FA314/6-1 and MC 9/7. [1] J. Fassbender, J. McCord, J. Magn. Magn. Mater. 320, 579 (2008). [2] J. McCord, T. Strache, I. Mönch, R. Mattheis, J. Fassbender, Phys. Rev. B 83, 224407 (2011). [3] I. Barsukov, F. M. Römer, R. Meckenstock, K. Lenz, J. Lindner, S. Hemken to Krax, A. Banholzer, M. Körner, J. Grebing, J. Fassbender, M. Farle, Phys. Rev. B 84, 140410(R) (2011).

Published
2012

2. Magnonic Crystals By Means Of Patterned Ion Implantation

Author

(0000-0003-3893-9630) Fassbender, J., Körner, M., Lenz, K., Strache, T., Banholzer, A., Grebin, J., Lindner, J., Barsukov, I., Römer, F., Meckenstock, R., Hemken To Krax, S., Farle, M., McCord, J., Mönch, I., Mattheis, R., (0000-0003-3893-9630) Fassbender, J., Körner, M., Lenz, K., Strache, T., Banholzer, A., Grebin, J., Lindner, J., Barsukov, I., Römer, F., Meckenstock, R., Hemken To Krax, S., Farle, M., McCord, J., Mönch, I., and Mattheis, R.

Abstract

Ion implantation is a standard process in semiconductor tech¬nology. However, since a doping of metals typically does not have such a tremendous effect as compared to semiconductors ion implantation in metals to achieve a desired electrical, optical or magnetic property is much less explored. A combination of litho-graphy and ion implantation to achieve a lateral ion implantation pattern is a novel route to design and construct artificial materials like photonic or magnonic crystal which rely on the local band gap or spin wave dispersion engineering [1]. The contribution will provide an overview over the different physical mechanisms which allow modifying and tailoring the dynamical magnetic properties, i. e., magnetic damping even in an anisotropic fashion, aiming at the creation of new functional materials. In one example [2] it is demonstrated that the mag¬netic damping parameter in a ferromagnetic/antiferromag¬ne¬tic/ferro¬magnetic trilayer stack can be continuously and spatially varied between two extremal values (see Fig. 1). In a second example [3] the creation of a lateral magnetization pattern by ion implantation gives rise to additional and anisotropic relaxation channels. Potential areas of application are magnonic crystals and band-stop filters in the GHz range. Acknowledgement: This work was supported by Deutsche Forschungsgemeinschaft SFB491, FA 314/3, FA314/6-1 and MC 9/7. [1] J. Fassbender, J. McCord, J. Magn. Magn. Mater. 320, 579 (2008). [2] J. McCord, T. Strache, I. Mönch, R. Mattheis, J. Fassbender, Phys. Rev. B 83, 224407 (2011). [3] I. Barsukov, F. M. Römer, R. Meckenstock, K. Lenz, J. Lindner, S. Hemken to Krax, A. Banholzer, M. Körner, J. Grebing, J. Fassbender, M. Farle, Phys. Rev. B 84, 140410(R) (2011).

Published
2012

3. Electrical stimulation of the anterior nucleus of thalamus for treatment of refractory epilepsy.

Author

Fisher R, Salanova V, Witt T, Worth R, Henry T, Gross R, Oommen K, Osorio I, Nazzaro J, Labar D, Kaplitt M, Sperling M, Sandok E, Neal J, Handforth A, Stern J, DeSalles A, Chung S, Shetter A, Bergen D, Bakay R, Henderson J, French J, Baltuch G, Rosenfeld W, Youkilis A, Marks W, Garcia P, Barbaro N, Fountain N, Bazil C, Goodman R, McKhann G, Babu Krishnamurthy K, Papavassiliou S, Epstein C, Pollard J, Tonder L, Grebin J, Coffey R, and Graves N

Subjects
Adult, Deep Brain Stimulation adverse effects, Deep Brain Stimulation methods, Depression etiology, Double-Blind Method, Electric Stimulation Therapy adverse effects, Epilepsies, Partial epidemiology, Epilepsies, Partial prevention & control, Epilepsies, Partial therapy, Epilepsy epidemiology, Epilepsy prevention & control, Female, Follow-Up Studies, Functional Laterality physiology, Humans, Longitudinal Studies, Male, Memory Disorders epidemiology, Memory Disorders etiology, Treatment Outcome, Anterior Thalamic Nuclei physiology, Electric Stimulation Therapy methods, Epilepsy therapy
Abstract

Purpose: We report a multicenter, double-blind, randomized trial of bilateral stimulation of the anterior nuclei of the thalamus for localization-related epilepsy., Methods: Participants were adults with medically refractory partial seizures, including secondarily generalized seizures. Half received stimulation and half no stimulation during a 3-month blinded phase; then all received unblinded stimulation., Results: One hundred ten participants were randomized. Baseline monthly median seizure frequency was 19.5. In the last month of the blinded phase the stimulated group had a 29% greater reduction in seizures compared with the control group, as estimated by a generalized estimating equations (GEE) model (p = 0.002). Unadjusted median declines at the end of the blinded phase were 14.5% in the control group and 40.4% in the stimulated group. Complex partial and "most severe" seizures were significantly reduced by stimulation. By 2 years, there was a 56% median percent reduction in seizure frequency; 54% of patients had a seizure reduction of at least 50%, and 14 patients were seizure-free for at least 6 months. Five deaths occurred and none were from implantation or stimulation. No participant had symptomatic hemorrhage or brain infection. Two participants had acute, transient stimulation-associated seizures. Cognition and mood showed no group differences, but participants in the stimulated group were more likely to report depression or memory problems as adverse events., Discussion: Bilateral stimulation of the anterior nuclei of the thalamus reduces seizures. Benefit persisted for 2 years of study. Complication rates were modest. Deep brain stimulation of the anterior thalamus is useful for some people with medically refractory partial and secondarily generalized seizures.

Published
2010
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