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This article describes novel composite thin films consisting of GaN, C, and Ga (termed "GaCN", as an analogue to BCN and other carbonitrides) as a prospective material for future optical applications. This is due to their tunable refractive index that depends on the carbon content. The composites are prepared by introducing alternating pulses of trimethylgallium (TMG) and ammonia (NH 3 ) on silicon substrates to mimic an atomic layer deposition process. Because the GaCN material is hardly reported to the best of our knowledge, a comprehensive characterization is performed to investigate into its chemical nature, primarily to determine whether or not it exists as a single-phase material. It is revealed that GaCN is a composite, consisting of phase-segregated, nanoscale clusters of wurtzitic GaN polycrystals, in addition to inclusions of carbon, nitrogen, and gallium, which are chemically bonded into several forms, but not belonging to the GaN crystals itself. By varying the deposition temperature between 400 and 600 °C and the NH 3 partial pressure between 0.7 × 10 -3 and 7.25 mbar, layers with a wide compositional range of Ga, C, and N are prepared. The role of carbon on the GaCN optical properties is significant: an increase of the refractive index from 2.19 at 1500 nm (for carbon-free polycrystalline GaN) to 2.46 (for GaCN) is achieved by merely 10 at. % of carbon addition. The presence of sp 2 -hybridized C=N clusters and carbon at the interface of the GaN polycrystals are proposed to determine their optical properties. Furthermore, the formation of the GaN polycrystals in the composite occurs through a TMG:NH 3 surface-adduct assisted pathway, whereas the inclusions of carbon, nitrogen, and gallium are formed by the thermal decomposition of the chemisorbed TMG species., Competing Interests: The authors declare no competing financial interest.

Affinity layers play a crucial role in chemical sensors for the selective and sensitive detection of analytes. Here, we report the use of composite affinity layers containing Metal Organic Frameworks (MOFs) in a polymeric matrix for sensing purposes. Nanoparticles of NH 2 -MIL-53(Al) were dispersed in a Matrimid polymer matrix with different weight ratios (0-100 wt %) and drop-casted on planar capacitive transducer devices. These coated devices were electrically analyzed using impedance spectroscopy and investigated for their sensing properties toward the detection of a series of alcohols and water in the gas phase. The measurements indicated a reversible and reproducible response in all devices. Sensor devices containing 40 wt % NH 2 -MIL-53(Al) in Matrimid showed a maximum response for methanol and water. The sensor response time slowed down with increasing MOF concentration until 40 wt %. The half time of saturation response (τ 0.5 ) increased by ∼1.75 times for the 40 wt % composition compared to devices coated with Matrimid only. This is attributed to polymer rigidification near the MOF/polymer interface. Higher MOF loadings (≥50 wt %) resulted in brittle coatings with a response similar to the 100 wt % MOF coating. Cross-sensitivity studies showed the ability to kinetically distinguish between the different alcohols with a faster response for methanol and water compared to ethanol and 2-propanol. The observed higher affinity of the pure Matrimid polymer toward methanol compared to water allows also for a higher uptake of methanol in the composite matrices. Also, as indicated by the sensing studies with a mixture of water and methanol, the methanol uptake is independent of the presence of water up to 6000 ppm of water. The NH 2 -MIL-53(Al) MOFs dispersed in the Matrimid matrix show a sensitive and reversible capacitive response, even in the presence of water. By tuning the precise compositions, the affinity kinetics and overall affinity can be tuned, showing the promise of this type of chemical sensors.

An imaging method has been developed based on charge collection in a scanning electron microscope (SEM) that allows discrimination between the amorphous and crystalline states of Phase-change Random Access Memory (PRAM) line cells. During imaging, the cells are electrically connected and can be switched between the states and the resistance can be measured. This allows for electrical characterization of the line cells in-situ in the SEM. Details on sample and measurement system requirements are provided which turned out to be crucial for the successful development of this method. Results show that the amorphous or crystalline state of the line cells can be readily discerned, but the spatial resolution is relatively poor. Nevertheless, it is still possible to estimate the length of the amorphous mark, and also for the first time, we could directly observe the shift of the amorphous mark from one side of the line cell to the other side when the polarity of the applied (50 ns) RESET pulse was reversed.

A computer-controlled procedure is outlined here that first determines the position of the amorphous-crystalline interface in an image. Subsequently, from a time series of these images, the velocity of the crystal growth front is quantified. The procedure presented here can be useful for a wide range of applications, and we apply the new approach to determine growth rates in a so-called fast-growth-type phase-change material. The growth rate (without nucleation) of this material is of interest for comparison with identical material used in phase-change random access memory cells. Crystal growth rates in the amorphous phase-change layers have been measured at various temperatures using in situ heating in a transmission electron microscope. Doped SbTe films (20 nm thick) were deposited on silicon nitride membranes, and samples with and without silicon oxide capping layer were studied. The activation energy for growth was found to be 3.0 eV. The samples without capping layer exhibit a nucleation rate that is an order of magnitude higher than the samples with a silicon oxide capping layer. This difference can be attributed to the partial oxidation of the phase-change layer in air. However, the growth rates of the samples with and without capping are quite comparable.

The amorphous to crystalline transition in the semiconductor GaSb has been studied as a recording mechanism for write-once optical storage. Amorphous as-deposited films, 100 nm thick, are transformed locally to the crystalline state by a focused laser beam. This recording process can be accomplished within 10 ns. The dimensions of the crystalline marks can be accurately controlled. Optical storage media based on GaSb are suitable for the archival storage of information modulated according to the compact disk format.

Stoichiometric amorphous films of InSb or GaSb are found to have very short (< 15 ns) crystallization times when heated to temperatures close to their melting point. They can be used for write-once amorphous to crystalline optical recording. By adding Te to InSb the crystallization time can be tuned so that erasable crystalline to amorphous optical recording is feasible with a 1-microm sized circular erase spot. Carrier-to-noise ratios of more than 50 dB are achievable at compact disk (CD) recording conditions. The erasable medium allows for CD - type run - length - !imited encoding at user bit densities of < 0.6 pm/bit.