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1. In silico screening for As/Se-free ovonic threshold switching materials

2. Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

3. Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

38. Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

47. NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector

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