Search

The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference., Comment: 12 pages (incl. 8 pages main text and 4 pages supplementary information), with 6 figures and 2 tables

A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $\Phi_{\text{Mn}}$/$\Phi_{\text{Sb}}=1.24\pm0.02$ are closest to the stoichiometric composition, for which the N\'{e}el temperature ($T_\text{N}$) attains its maximum values. Mn-related structural defects are believed to be the driving contribution to changes in the vertical lattice parameter. Having established the optimum growth conditions, a second set of samples with CuMnSb layer thickness varied from 5 to 510 nm is fabricated. We show that for sufficiently large thicknesses, the magnetic characteristics ($T_\text{N}\simeq62$ K, Curie-Weiss temperature $\Theta_\text{CW} = -100$ K) of the stoichiometric layers do correspond to the parameters reported for bulk samples. On the other hand, we observe a reduction of $T_\text{N}$ as a function of the CuMnSb thickness for our thinnest layers. All findings reported here are of particular relevance for studies aiming at the demonstration of N\'{e}el vector switching and detection in this noncentrosymmetric antiferromagnet, which have been recently proposed., Comment: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://doi.org/10.1063/5.0092828

MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.

In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator.

Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb., Comment: 29 pages, 13 figures

In this work, BV RI light curves of 55 Type II supernovae (SNe II) from the Lick Observatory Supernova Search program obtained with the Katzman Automatic Imaging Telescope and the 1 m Nickel telescope from 2006 to 2018 are presented. Additionally, more than 150 spectra gathered with the 3 m Shane telescope are published. We conduct an analyse of the peak absolute magnitudes, decline rates, and time durations of different phases of the light and colour curves. Typically, our light curves are sampled with a median cadence of 5.5 days for a total of 5093 photometric points. In average V-band plateau declines with a rate of 1.29 mag (100 days)-1, which is consistent with previously published samples. For each band, the plateau slope correlates with the plateau length and the absolute peak magnitude: SNe II with steeper decline have shorter plateau duration and are brighter. A time-evolution analysis of spectral lines in term of velocities and pseudoequivalent widths is also presented in this paper. Our spectroscopic sample ranges between 1 and 200 days post-explosion and has a median ejecta expansion velocity at 50 days post-explosion of 6500 km/s (Halpha line) and a standard dispersion of 2000 km/s. Nebular spectra are in good agreement with theoretical models using a progenitor star having a mass <16 Msol. All the data are available to the community and will help to understand SN II diversity better, and therefore to improve their utility as cosmological distance indicators., Comment: 24 pages, 12 figures, accepted for publication in MNRAS

A cryogenic apparatus is described that enables a new experiment, nEDM@SNS, with a major improvement in sensitivity compared to the existing limit in the search for a neutron Electric Dipole Moment (EDM). It uses superfluid $^4$He to produce a high density of Ultra-Cold Neutrons (UCN) which are contained in a suitably coated pair of measurement cells. The experiment, to be operated at the Spallation Neutron Source at Oak Ridge National Laboratory, uses polarized $^3$He from an Atomic Beam Source injected into the superfluid $^4$He and transported to the measurement cells as a co-magnetometer. The superfluid $^4$He is also used as an insulating medium allowing significantly higher electric fields, compared to previous experiments, to be maintained across the measurement cells. These features provide an ultimate statistical uncertainty for the EDM of $2-3\times 10^{-28}$ e-cm, with anticipated systematic uncertainties below this level.

Novel experimental techniques are required to make the next big leap in neutron electric dipole moment experimental sensitivity, both in terms of statistics and systematic error control. The nEDM experiment at the Spallation Neutron Source (nEDM@SNS) will implement the scheme of Golub & Lamoreaux [Phys. Rep., 237, 1 (1994)]. The unique properties of combining polarized ultracold neutrons, polarized $^3$He, and superfluid $^4$He will be exploited to provide a sensitivity to $\sim 10^{-28}\,e{\rm \,\cdot\, cm}$. Our cryogenic apparatus will deploy two small ($3\,{\rm L}$) measurement cells with a high density of ultracold neutrons produced and spin analyzed in situ. The electric field strength, precession time, magnetic shielding, and detected UCN number will all be enhanced compared to previous room temperature Ramsey measurements. Our $^3$He co-magnetometer offers unique control of systematic effects, in particular the Bloch-Siegert induced false EDM. Furthermore, there will be two distinct measurement modes: free precession and dressed spin. This will provide an important self-check of our results. Following five years of "critical component demonstration," our collaboration transitioned to a "large scale integration" phase in 2018. An overview of our measurement techniques, experimental design, and brief updates are described in these proceedings., Comment: Submitted to proceedings of PPNS 2018 - International Workshop on Particle physics at Neutron Sources (https://www.webofconferences.org/epj-web-of-conferences-forthcoming-conferences/1148-ppns-2018)

We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of $\frac{1}{2} e^2/h$ in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from $\frac{1}{2} e^2/h$ Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics., Comment: 4+6 pages, 5+9 figures

The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutrality. Within a narrow range at about 80% Sb content, the Hall resistivity shows a maximum of about 10 k$\Omega$ at 4 K and quantizes at mK temperatures. Under these conditions, thin layers grown on Si(111) or InP(111) and with or without a Te cap exhibit quantization. The quantization persists independently of the interfaces between cap, layer and substrate, the limited crystalline quality, and the degradation of the layer proving the robustness of the quantum anomalous Hall effect.

We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi$_2$Te$_2$Se$_1$ reaches a maximum of only $\approx$ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 X-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films., Comment: Accepted for publication in Journal of Physics: Condensed Matter (JPCM)

Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.

Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dilute magnetic doping. Indeed, recent experiments suggest that the ferromagnetism exhibits at least some superparamagnetic character. We report on transport measurements in a sample that shows perfect quantum anomalous Hall quantization, while at the same time exhibits traits in its transport data which suggest inhomogeneities. We speculate that this may be evidence that the percolation path interpretation used to explain the transport during the magnetic reversal may actually have relevance over the entire field range., Comment: 5 pages, 4 figure

We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds., Comment: 5 pages, 3 figures and Supplementary materials, to be published in Physical Review Letters

The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.

We summarize the nuclear physics interests in the Oklo natural nuclear reactors, focusing particularly on developments over the past two decades. Modeling of the reactors has become increasingly sophisticated, employing Monte Carlo simulations with realistic geometries and materials that can generate both the thermal and epithermal fractions. The water content and the temperatures of the reactors have been uncertain parameters. We discuss recent work pointing to lower temperatures than earlier assumed. Nuclear cross sections are input to all Oklo modeling and we discuss a parameter, the $^{175}$Lu ground state cross section for thermal neutron capture leading to the isomer $^{176\mathrm{m}}$ Lu, that warrants further investigation. Studies of the time dependence of dimensionless fundamental constants have been a driver for much of the recent work on Oklo. We critically review neutron resonance energy shifts and their dependence on the fine structure constant $\alpha$ and the ratio $X_q=m_q/\Lambda$ (where $m_q$ is the average of the $u$ and $d$ current quark masses and $\Lambda$ is the mass scale of quantum chromodynamics). We suggest a formula for the combined sensitivity to $\alpha$ and $X_q$ that exhibits the dependence on proton number $Z$ and mass number $A$, potentially allowing quantum electrodynamic and quantum chromodynamic effects to be disentangled if a broader range of isotopic abundance data becomes available., Comment: 40 pages, 7 figures. Review paper

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution X-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F \approx 0.4$, nearly independent of the charge density. Our shot noise results are consistent with theoretical models for disordered graphene ribbons with a dimensionless scattering strength $K_0 \approx 10$ corresponding to rather strong disorder. Close to charge neutrality, an increase in $F$ up to $\sim 0.7$ is found, which indicates the presence of a dominant Coulomb gap possibly due to a single quantum dot in the transport gap., Comment: 5 pages, 5 figures

We give a short overview of the DarkLight detector concept which is designed to search for a heavy photon A' with a mass in the range 10 MeV/c^2 < m(A') < 90 MeV/c^2 and which decays to lepton pairs. We describe the intended operating environment, the Jefferson Laboratory free electon laser, and a way to extend DarkLight's reach using A' --> invisible decays., Comment: 8 pages, 4 figures, contributed to the Community Summer Study 2013 "Snowmass on the Mississippi" in the New, Light, Weakly Coupled Particles (NLWCP) subgroup of the Intensity Frontier

Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy., Comment: 4 pages, 4 figures

Uncertainty in the operating temperatures of Oklo reactor zones impacts the precision of bounds derived for time variation of the fine structure constant $\alpha$. Improved $^{176}$Lu/$^{175}$Lu thermometry has been discussed but its usefulness may be complicated by photo excitation of the isomeric state $^{176m}$Lu by $^{176}$Lu($\gamma,\gamma^\prime $) fluorescence. We calculate prompt, delayed and equilibrium $\gamma$-ray fluxes due to fission of $^{235}$U in pulsed mode operation of Oklo zone RZ10. We use Monte Carlo modeling to calculate the prompt flux. We use improved data libraries to estimate delayed and equilibrium spectra and fluxes. We find $\gamma$-ray fluxes as a function of energy and derive values for the coefficients $\lambda_{\gamma,\gamma^\prime}$ that describe burn-up of $^{176}$Lu through the isomeric $^{176m}$Lu state. The contribution of the ($\gamma,\gamma^\prime $) channel to the $^{176}$Lu/$^{175}$Lu isotopic ratio is negligible in comparison to the neutron burn-up channels. Lutetium thermometry is fully applicable to analyses of Oklo reactor data., Comment: 9 pages, 3 figures

Recent years have seen a renewed interest in the Oklo phenomenon, particularly in relation to the study of time variation of the fine structure constant. The neutron fluence is one of the crucial parameters for Oklo reactors. Several approaches to its determination were elaborated in the past. We consider whether it possible to use the present isotopic La138/139 data for RZ10 as an additional indicator of neutron fluences in the active cores of the reactors. We calculate the dependence of the Oklo La138 abundance on neutron fluence and elemental lanthanum concentration. The neutron fluence in RZ10 can be deduced from lanthanum isotopic data, but requires reliable data on the primordial elemental abundance. Conversely, if the fluence is known, the isotope ratio provides information on the primordial lanthanum abundance that is not otherwise easily determined., Comment: 4 pages, 2 figures

The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a combined experimental and theoretical analysis, that this does not hold for the quantum Hall effect in narrow graphene ribbons. In our graphene Hall bar, which is only 60 nm wide, we observe the quantum Hall effect up to Landau level index k=2 and show within a zero free-parameter model that the spatial extent of the compressible and incompressible strips is of a similar magnitude as the magnetic length. We conclude that in narrow graphene ribbons the single-particle picture is a more appropriate description of the quantum Hall effect and that electrostatic effects are of minor importance., Comment: RevTex, 5 pages, 4 figures (matches published version)

Lutetium thermometry has been used to analyze Oklo natural nuclear reactor zones but leads to widely varying and puzzling predictions for the temperatures $T_O$ which in turn impacts bounds on time variation of the fine structure constant $\alpha$. We revisit results for reactor zone RZ10 in light of new measurements of the isomer branching ratio $B^g$ in $^{175}$Lu neutron capture at 5 and 25 keV. We recalculate predictions for $T_O$ as a function of $B^g$ using realistic models of the Oklo neutron flux. We find $T_O = 100 \pm 30$ C using a new value of $B^g$, in contrast to $350 < T_O < 500 $ C using the evaluated value at thermal energy. Lutetium thermometry can be applicable to analyses of Oklo reactor data, but a better measurement of $B^g$ with thermal neutrons is needed to confirm the reliability of temperature predictions., Comment: 7 pages, 2 figures

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.

A significant fraction of the research effort at the Triangle Universities Nuclear Laboratory (TUNL) focuses on weak interaction studies and searches for physics beyond the Standard Model. One major effort is the development of a new experimental technique to search for the neutron electric dipole moment (nEDM) that offers the potential for a factor of 100 increase in sensitivity over existing measurements. The search for this moment has the potential to reveal new sources of time reversal (T) and charge-conjugation-and-parity (CP) violation and to challenge calculations that propose extensions to the Standard Model. We provide a brief overview of the experiment as a whole and discuss the work underway at TUNL as part of this effort., Comment: 8 pages, Proceedings of the DPF-2011 Conference, Providence, RI, August 8-13, 2011

Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of intermediate $Zn_{0.943}Be_{0.057}Se$ nonmagnetic barrier between the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ semimagnetic barrier and $ZnSe$ quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the $Mn$ complexes in the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer. The change of the band gap as well as of the donor and acceptor levels energies under the effect of biaxial compression of the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer by the $Zn_{0.943}Be_{0.057}Se$ are estimated. It is concluded that the $Zn_{0.943}Be_{0.057}Se$ intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ barrier energy levels on the movement of the energy levels of $ZnSe$ quantum well in a magnetic field and on polarization of the quantum well exciton emission.

We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is highly spin polarized at zero magnetic field due to the zero field splitting. Detailed modeling demonstrates that the local spin polarization efficiency exceeds 90% without an external magnetic field., Comment: 7 pages, 10 figures (including supplementary information)

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device., Comment: 4 pages, 4 figures

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic semiconductor. The effect originates from the tunneling injection from the LSMO contact and can thus occur even for organic layers which are too thick to support the assumption of tunneling through the layer. Magnetoresistance measurements show a clear spin-valve signal, with the typical two step switching pattern caused by the magnetocrystalline anisotropy of the epitaxial magnetic electrode., Comment: 10 pages 5 figures Paper has been rewritten, new results have been added

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer., Comment: 5 pages, 7 figures

We report on the observation of Fermi edge enhanced resonant tunneling transport in a II-VI semiconductor heterostructure. The resonant transport through a self assembled CdSe quantum dot survives up to 45 K and probes a disordered two dimensional (2D) like emitter which dominates the magnetic field dependence of the transport. An enhancement of the tunnel current through many particle effects is clearly observable, even without an applied magnetic field. Additional fine structure in the tunneling current suggests that while conventional Fermi edge singularity theory successfull reproduces the general features of the increased transmission, it is not adequate to describe all details of the current enhancement.

We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy components are always present. The primary biaxial along ([100] and [010]) along with both uniaxial components along the [110] and [010] crystal directions which are often reported separately. Various fingerprints of typical (Ga,Mn)As transport samples at 4 K are included to illustrate the variation of the relative strength of these anisotropy terms. We further investigate the temperature dependence of the magnetic anisotropy and the domain wall nucleation energy with the help of the fingerprint method.

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material., Comment: 10 pages, 12 figures

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound hole states., Comment: 9 pages, 10 figures

We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth., Comment: 10 pages, 4 figures

We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained. This strong anisotropy can not be explained by shape anisotropy and is attributed solely to lattice strain relaxation. Upon increasing the uniaxial strain anisotropy in the (Ga,Mn)As stripes, we also observe an increase in magnetic anisotropy.

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.