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We report on the Gilbert damping parameter $\alpha$, the effective magnetization $4\pi M_{eff}$, and the asymmetry of the $g$-factor in bottom-CoFeB(0.93~nm)/MgO(0.90--1.25~nm)/CoFeB(1.31~nm)-top as-deposited systems. Magnetization of CoFeB layers exhibits a specific noncollinear configuration with orthogonal easy axes and with $4\pi M_{eff}$ values of $+2.2$ kG and $-2.3$ kG for the bottom and top layers, respectively. We show that $4\pi M_{eff}$ depends on the asymmetry $g_\perp - g_\parallel$ of the $g$-factor measured in the perpendicular and the in-plane directions revealing a highly nonlinear relationship. In contrast, the Gilbert damping is practically the same for both layers. Annealing of the films results in collinear easy axes perpendicular to the plane for both layers. However, the linewidth is strongly increased due to enhanced inhomogeneous broadening.

We report broadband ferromagnetic resonance (FMR) measurements based on a coplanar waveguide (CPW) of ultrathin magnetic film structures that comprise in-plane/out-of-plane decoupled layers deposited on nonmagnetic buffer layers of various thickness or other buffer structures with a diverse sheet resistance. We show that the excitation of the fundamental mode can be substantially (up to 10 times) enhanced in the structures deposited on buffer layers with a low sheet resistance in comparison to the structures deposited on thin or weakly conducting buffer layers. The results are analyzed in terms of shielding of the electromagnetic field of CPW by the conducting buffer layers. The effect of enhancement of FMR absorption can be attractive for applications in spintronic devices that utilize magnetization dynamics of ultrathin ferromagnetic layers.

We present a micromagnetic approach to exchange bias (EB) in ferromagnetic (FM)/antiferromagnetic (AFM) thin film systems with a small number of irreversible interfacial magnetic moments. We express the exchange bias field $H_{EB}$ in terms of fundamental micromagnetic length scale---the exchange length $l_{ex}$. The benefit from this approach is a better separation of a term related to FM layer from a term related to FM/AFM coupling at interfaces. Using this approach we estimate the highest limit of $H_{EB}$ in real FM/AFM systems., Comment: 14 pages, 5 figures, version 3