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Hydrovoltaic power generation from liquid water and ambient moisture has attracted considerable research efforts. However, there is still limited consensus on the optimal material properties required to maximize the power output. Here, we used laminates of two different phases of layered MoS$_2$ -- metallic 1T' and semiconducting 2H -- as representative systems to investigate the critical influence of specific characteristics, such as hydrophilicity, interlayer channels, and structure, on the hydrovoltaic performance. The metallic 1T' phase was synthesized via a chemical exfoliation process and assembled into laminates, which can then be converted to the semiconducting 2H phase by thermal annealing. Under liquid water conditions, the 1T' laminates, having a channel size of 6 angstroms, achieved a peak power density of 2.0 mW m$^{-2}$, significantly outperforming the 2H phase, lacking defined channels, that produced a power of 2.4 microW m$^{-2}$. Our theoretical analysis suggests that energy generation in these hydrophilic materials primarily arises from electro-kinetic and surface diffusion mechanisms. These findings highlight the crucial role of phase-engineered MoS$_2$ and underscore the potential of 2D material laminates in advancing hydrovoltaic energy technologies., Comment: 27 Pages with Supplementary Information, 5 Main Figures, 8 Supplementary Figures, 1 Supplementary Table

Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 {\AA}. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices., Comment: 20 pages, 15 figures

In the osmotic power generation field, reaching the industrial benchmark has been challenging because of the need for capillaries close to the sizes of ions and molecules. Here, we fabricated well-controlled 'along-the-capillary' membranes of Na-vermiculite with a capillary size of ~5 Angstrom. They exhibit 1600 times enhanced conductivity compared to commonly studied 'across-the-capillary' membranes. Interestingly, they show a very high cation selectivity of 0.83 for NaCl solutions, which resulted in large power densities of 9.6 W.m^-2 and 12.2 W.m^-2 at concentration gradients of 50 and 1000, respectively, at 296 K, for an unusually large membrane length of 100 micron. The power density shows an exponential increase with temperature, reaching 65.1 W.m-2 for a concentration gradient of 50 at 333 K. This markedly differs from the classical behavior and indicates the role of ion (de)hydration in enhancing power density, opening new possibilities for exploiting such membranes for energy harvesting applications., Comment: 34 pages, 4 main figures

Fluidic channels with physical dimensions approaching molecular sizes are crucial for novel desalination, chemical separation, and sensing technologies. However, fabrication of precisely controlled fluidic channels in the angstrom size is extremely challenging. This, along with our limited understanding of nanofluidic transport, hinders practical applications. Here, we fabricated high-quality salt-intercalated vermiculite membranes with channel sizes 3-5 Angstrom, highly dependent on intercalant. Unlike pristine samples, the salt-intercalated membranes are highly stable in water. We tested several such membranes, of which 0.6 micron thick membranes showed dye rejection efficiencies greater than 98 percent with exceptionally high water permeance of 5400 L m-2 h-1 bar-1 at a differential pressure of 0.9 bar. Interestingly, the same membrane also rejected NaCl ions, with efficiencies of 95 percent. Our highly confined channels exhibit sub-linear ionic conductance related to hydration sizes, steric exclusion, K+ mobility enhancement, and conductance saturation at concentrations less than or equal to 10 mM. This makes highly confined channels interesting for both fundamental science and applications., Comment: 23 pages, 17 figures

We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to spin-orbit coupling can generate a nonnegligible contribution to the spin Hall magnetoresistance and the interfacial spin-orbit coupling effect is therefore key to the understanding of various spin-orbit-coupling-related phenomena in magnetic/non-magnetic bilayers., Comment: 6 pages, 4 figures

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect., Comment: 22 pages, 4 figures, ACS Nano, March 09, 2016

Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In this paper, we report the wetting behaviour of vdW heterostructures which include, chemical vapor deposition (CVD) grown graphene, molybdenum disulfide (MoS2) and tungsten disulfide (WS2) on few layers of hexagon boron nitride (h-BN) and SiO2/Si. Our study clearly shows that while this class of two-dimensional materials are not wetting transparent, there seems to be a significant amount of influence on their wetting properties by the underlying substrate due to dominant vdW forces. Contact angle measurements indicate that graphene and graphene-like layered transitional metal dichalcogenides invariably have intrinsically dispersive surfaces with a dominating London-vdW force-mediated wettability. Electric field controlled wetting studies of MoS2/WS2/SiO2/Si heterostructures were performed and no notable changes to the water contact angle was seen with applied voltage although two orders of magnitude change in resistance was observed. We postulate that the highly dispersive nature of these surfaces arising from the predominant London-vdW forces could be the reason for such observation.

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

We demonstrate a current tunable Rashba spin orbit interaction in LaAlO3/SrTiO3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 uA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching.

Manipulating spin-orbit coupling (SOC) is important for devices such as spin-orbit torque based memory and its understanding is neccessary to answer several fundamental open questions in triplet state superconductivity, topological insulators and Majorana fermions. Here we report spin splitting of 25 meV at the LaAlO3/SrTiO3 (110) interface for in-plane spins at a current density of 1.4x104 A/cm2, which is large compared to that found in semiconductor heterostructures or the LaAlO3/SrTiO3 (100) interface, and in addition it is anisotropic. The anisotropy arises from the difference in electron effective mass along the [001] and [1-10] directions. Our study predicts a spin splitting energy > 1000 meV at a current density of 107 A/cm2, which is enormous compared to metallic systems and will be an ideal spin polarized source. In addition to the in-plane effect, there is an unexpected gate-tunable out-of-plane SOC at the LaAlO3/SrTiO3 (110) interface when the spins lie out-of-plane due to broken symmetry in the plane of the interface. We demonstrate that this can be manipulated by varying the LaAlO3 thickness showing that this interface can be engineered for spin-orbit torque devices., Comment: 17 pages, 5 figures in Advanced Electronic Materials (Wiley) Vol. 1, Issue 8, 2015

A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum Hall effect are also observed for the same sample., Comment: Phys. Rev. B (2013)

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.

The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance values suggests higher Cl for low TMR junctions. Using Cole-Cole plots the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values.