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32 results on '"Gong, Penglai"'

1. Fermi-level depinning in metal-2D multilayered semiconductor junctions

Author

Wang, Qian, Shao, Yangfan, Gong, Penglai, and Shi, Xingqiang

Subjects
Condensed Matter - Materials Science
Abstract

Thicknesses-dependent performance of metal-two-dimensional (2D) semiconductor junctions (MSJ) in electronics/optoelectronics have attracted increasing attention, but till present, people have little knowledge about the micro-mechanism of the thicknesses (or layer-number) dependence. Here, by first-principles calculations based on density functional theory, we show that the Fermi-level pinning (FLP) factor of MSJ depends sensitively on the layer-number of few-layer 2D semiconductors, and, an extended FLP theory is proposed for metal-2D multilayered semiconductor junctions (MmSJ). Taking multilayered MoS2 as a typical example for van der Waals (vdW) semiconductor in MmSJ, the extended FLP theory has the following character: strong pinning right at the metal-1st-layer semiconductor interface while depinning occurs between MoS2 layers. This depinning effect between vdW layers has several important consequences: 1) the overall pinning in MmSJ is greatly weakened; 2) p-type contact, rarely obtained in metal-monolayer MoS2 junctions, becomes favored in MmSJ, which is important for CMOS logical devices; 3) depinning between MoS2 layers result in type II band alignment in MoS2 'homojunction' supported on metals, which is useful for optoelectronics. Moreover, our extended FLP theory sheds light on the recent controversial experimental observation and paves a new and universal route to type II band alignment in vdW 'homojunctions'., Comment: 16 pages, 4 figures

Published
2019

3. Exploration of Electrode‐Electrolyte‐in‐One System Based on Fluorine/Chloride Ion Battery.

Author

Wu, Mengqi, Hu, Xuechen, Cui, Fuhan, Wang, Jianglong, Zhao, Chunyu, Shi, Xingqiang, Liu, Huanjuan, Wang, Ruining, Zhang, Hu, Jin, Chendong, Gong, Penglai, Cai, Dong, Wei, Yingjin, and Lian, Ruqian

Subjects
CHLORIDE ions, ELECTROCHEMICAL electrodes, SOLID electrolytes, FLUORINE, ELECTRIC conductivity, ENERGY storage
Abstract

With an increasingly profound understanding of battery materials, strategies designed for interface protection have become more sophisticated. However, it is inherent that different materials used in electrodes and electrolytes tend to react with each other. To address this issue, this study proposes an "Electrode‐Electrolyte‐In‐One" (EEIO) concept, where a single energy storage material can serve as both electrode and solid‐state electrolyte (SSE) during its different ion storage stages. The EEIO materials of chloride ion batteries and fluorine ion batteries are preliminarily studied, establishing reasonable screening procedures and predicting their operational mechanisms. The analysis of Cl− and F− affinity indicates that the EEIO system in the anion storage batteries comprises the anode and SSE. Through comprehensive evaluation of ion binding capacity, phase transformation mechanism, electrical conductivity, and ion diffusion kinetic properties, several potential EEIO materials are identified. In the EEIO system, the material interface and the conductive‐insulation interface are separated, which solves the material compatibility problem between the anode and SSE. Furthermore, the EEIO system has an inherent correlation between the anode electrochemical reaction and the SSE decomposition reaction, ensuring that the electrochemical voltage of EEIO batteries never exceeds the decomposition voltage of SSE. Therefore, SSE in the EEIO battery has absolute electrochemical stability. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Phase transitions in transition-metal dichalcogenides with strain: Insights from first-principles calculations

Author

Liu, Rui-Qi, primary, Mi, Jiu-Long, additional, Wang, Bo-Jing, additional, Hou, Yi-Na, additional, Liu, Lin, additional, Shi, Yan-Nan, additional, Song, Yu-Shan, additional, Jin, Chendong, additional, Zhang, Hu, additional, Gong, Penglai, additional, Lian, Ruqian, additional, Wang, Jianglong, additional, Shi, Xingqiang, additional, and Wang, Rui-Ning, additional

Published
2023
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13. Abnormal linear dichroism transition in two-dimensional PdPS

Author

Li, Gang, primary, Chen, Zheng, additional, Zhang, Hanlin, additional, Yu, Mengxi, additional, Zhang, Hui, additional, Chen, Jiawnag, additional, Wang, Zihan, additional, Yin, Shiqi, additional, Lin, Weichang, additional, Gong, Penglai, additional, Zeng, Longhui, additional, Zhu, Xiangde, additional, Wei, Wensen, additional, Tian, Mingliang, additional, and Li, Liang, additional

Published
2022
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14. Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution

Author

Liu, Kailang, primary, Chen, Xiang, additional, Gong, Penglai, additional, Yu, Ruohan, additional, Wu, Jinsong, additional, Li, Liang, additional, Han, Wei, additional, Yang, Sanjun, additional, Zhang, Chendong, additional, Deng, Jinghao, additional, Li, Aoju, additional, Zhang, Qingfu, additional, Zhuge, Fuwei, additional, and Zhai, Tianyou, additional

Published
2022
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17. Van der Waals epitaxial growth of single-crystal molecular film

Author

Liu, Lixin, Gong, Penglai, Liu, Kailang, Huang, Bingrong, Zhang, Zhihao, Fu, Yingshuang, Wu, Yu, Zhao, Yinghe, Wang, Meihui, Xu, Yongshan, Li, Huiqiao, and Zhai, Tianyou

Abstract

Epitaxy is the cornerstone of semiconductor technology, enabling the fabrication of single-crystal film. Recent advancements in van der Waals (vdW) epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals. However, when it comes to molecular crystals, the overall weak vdW force means that it is a significant challenge for small molecules to form a well-ordered structure during epitaxy. Here we demonstrate that the vdW epitaxy of Sb2O3molecular crystal, where the whole growth process is governed by vdW interactions, can be precisely controlled. The nucleation is deterministically modulated by epilayer–substrate interactions and unidirectional nuclei are realized through designing the lattice and symmetry matching between epilayer and substrate. Moreover, the growth and coalescence of nuclei as well as the layer-by-layer growth mode are kinetically realized via tackling the Schwoebel-Ehrlich barrier. Such precise control of vdW epitaxy enables the growth of single-crystal Sb2O3molecular film with desirable thickness. Using the ultrathin highly oriented Sb2O3film as a gate dielectric, we fabricated MoS2-based field-effect transistors that exhibit superior device performance. The results substantiate the viability of precisely managing molecule alignment in vdW epitaxy, paving the way for large-scale synthesis of single-crystal 2D molecular crystals.This paper reports the van der Waals epitaxial growth of single-crystal Sb2O3, paving the way for precisely managing molecule alignment over nucleation and growth kinetics.

Published
2024
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18. Wafer-scale van der Waals Dielectrics of Inorganic Molecular Crystals

Author

Liu, Kailang, primary, Jin, Bao, additional, Han, Wei, additional, Chen, Xiang, additional, Gong, Penglai, additional, Huang, Li, additional, Zhao, Yinghe, additional, Li, Liang, additional, Yang, Sanjun, additional, Hu, Xiaozong, additional, Duan, Junyuan, additional, Liu, Lixin, additional, Zhuge, Fuwei, additional, and Zhai, Tianyou, additional

Published
2021
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28. Raman investigation of layered ZrGeTe4 semiconductor.

Author

Gong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, and Tang, Dongsheng

Subjects
SEMICONDUCTORS, ZIRCONIUM, GERMANIUM, RAMAN spectroscopy, NANOELECTRONICS
Abstract

This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2019
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30. H‐/dT‐MoS2‐on‐MXene Heterostructures as Promising 2D Anode Materials for Lithium‐Ion Batteries: Insights from First Principles.

Author

Shao, Yangfan, Gong, Penglai, Pan, Hui, and Shi, Xingqiang

Abstract

Experimental synthesis of two‐dimensional MoS2‐on‐MXene heterostructures and phase control of MoS2 have been demonstrated recently. Here, the electronic, electrochemical, mechanical properties, and structural morphology of MoS2@Ti2C and MoS2@Ti2CO2 heterostructures as anode materials for lithium‐ion batteries are systematically investigated by taking advantages of van der Waals corrected spin‐polarized density functional theory to give atomistic insights. The results herein demonstrate that, for the MoS2@Ti2CO2 heterostructure, MoS2 polymorph drastically affects the electronic structure and lithium (Li) diffusion at the interface. Li diffusion barrier at the interface of dT‐MoS2@Ti2CO2 along zigzag direction (0.15 eV) is much smaller than that of H‐MoS2@Ti2CO2 (0.67 eV). For the MoS2@Ti2C heterostructure, however, the Li diffusion behavior and electronic structure are relatively insensitive to MoS2 morphology. Especially, the MoS2@Ti2C heterostructures shows ultralow diffusion barrier, high charge–discharge rate, very low open‐circuit voltage (0.62–0.25 V), and high mechanical flexibility. These results suggest that MoS2@MXene heterostructures are promising anode materials for lithium‐ion batteries. [ABSTRACT FROM AUTHOR]

Published
2019
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32. Approaching strain limit of two-dimensional MoS 2 via chalcogenide substitution.

Author

Liu K, Chen X, Gong P, Yu R, Wu J, Li L, Han W, Yang S, Zhang C, Deng J, Li A, Zhang Q, Zhuge F, and Zhai T

Abstract

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS 2 , remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS 2 via chalcogenide substitution reaction (CSR) of MoTe 2 with lattice inheritance. The MoS 2 resulting from the sulfurized MoTe 2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS 2 /MoTe 2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS 2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices., Competing Interests: Conflict of interest The authors declare that they have no conflict of interest., (Copyright © 2021 Science China Press. Published by Elsevier B.V. All rights reserved.)

Published
2022
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