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2. Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations.

Author

Merzi, Stefano, Acerbi, Fabio, Aicardi, Corinne, Fiore, Daniela, Goiffon, Vincent, Gola, Alberto Giacomo, Marcelot, Olivier, Materne, Alex, and Saint-Pe, Olivier

Subjects
PHOTON detectors, NONIONIZING radiation, RADIATION damage, PHOTON flux, PHOTOMULTIPLIERS
Abstract

Silicon Photomultipliers (SiPMs) are single photon detectors that gained increasing interest in many applications as an alternative to photomultiplier tubes. In the field of space experiments, where volume, weight and power consumption are a major constraint, their advantages like compactness, ruggedness, and their potential to achieve high quantum efficiency from UV to NIR makes them ideal candidates for spaceborne, low photon flux detectors. During space missions however, SiPMs are usually exposed to high levels of radiation, both ionizing and non-ionizing, which can deteriorate the performance of these detectors over time. The goal of this work is to compare process and layout variation of SiPMs in terms of their radiation damage effects to identify the features that helps reduce the deterioration of the performance and develop the next generation of more radiation-tolerant detectors. To do this, we used protons and X-rays to irradiate several Near Ultraviolet High-Density (NUV-HD) SiPMs with small areas (single microcell, 0.2 × 0.2 mm2 and 1 × 1 mm2) produced at Fondazione Bruno Kessler (FBK), Italy. We performed online current-voltage measurements right after each irradiation step, and a complete functional characterization before and after irradiation. We observed that the main contribution to performance degradation in space applications comes from proton damage in the form of an increase in primary dark count rate (DCR) proportional to the proton fluence and a reduction in activation energy. In this context, small active area devices show a lower DCR before and after irradiation, and we propose light or charge-focusing mechanisms as future developments for high-sensitivity radiation-tolerant detectors. [ABSTRACT FROM AUTHOR]

Published
2024
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4. Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-CMOS Image Sensor

Author

Salih Alj, Antoine, Touron, Pierre, Roy, Francois, Tournier, Arnaud, Michelot, Julien, Demiguel, Stephane, Virmontois, Cedric, Lalucaa, Valerian, Magnan, Pierre, and Goiffon, Vincent

Abstract

The charge-coupled device (CCD) is an essential image sensor for spaceborne scientific applications, high-resolution Earth observation, and low-light imaging due its charge transfer feature yielding intrinsically a high dynamic range. To create a high-performance image sensor that can integrate with CMOS technology, a new design of CCDs using advanced CMOS manufacturing has been developed. In this article, a charge domain fully depleted CCD-on-CMOS image sensor built with capacitive deep trench isolation (CDTI) is described and characterized. Dark current and clock-induced charges (CICs) are investigated through their dependence on operational parameters, such as biasing, clocking, and temperature. The contributions of each charge generation source are separated, identified, and quantified to provide an accurate depiction of the device behavior in multipinned phase (MPP) charge transfer mode. In the light of the physical phenomena at play, involving interface state charge generation and impact ionization, an optimization on the device’s clocking is proposed as the best trade-off on CICs and dark current. Perspectives aiming at further enlarging the applicative field of this image sensor are discussed.

Published
2024
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5. Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Author

Alj, Antoine Salih, Touron, Pierre, Roy, Francois, Demiguel, Stephane, Michelot, Julien, Lalucaa, Valerian, Virmontois, Cedric, Magnan, Pierre, and Goiffon, Vincent

Abstract

Total ionizing dose (TID) effects are explored in a fully depleted n-type CCD-on-CMOS based on capacitive deep trench isolation (CDTI). The root cause of the observed degradation on full well charge (FWC), charge transfer efficiency (CTE), and dark current is investigated by discriminating the role of interface states and oxide traps. Biasing conditions on irradiation and long-term annealing are explored to provide more elements of comparison with the state of the art of TID effects on modern CMOS devices.

Published
2024
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6. Investigating Dark Current Random Telegraph Signal in a HgCdTe H4RG-10 Infrared Detector for Space Application

Author

Antonsanti, Aubin, Ryder, Landen D., Le Roch, Alexandre, Waczynski, Augustyn, Miko, Laddawan, Delo, Greg, Cillis, Analia, Waczynski, Stefan, Feggans, Keith, Barth, Jonathan D., Goiffon, Vincent, Virmontois, Cedric, Hill, Robert J., Wollack, Edward, and Lauenstein, Jean-Marie

Abstract

Dark current random telegraph signal (DC-RTS, RTS in the following) characteristics of astronomical H4RG-10 HgCdTe near-infrared (NIR) image sensors are investigated before irradiation, for cumulative radiation dose up to 5 krad(Si), and for subsequent thermal annealing. This study is carried out as part of the qualification testing for the Roman Space Telescope (RST) Wide Field Instrument (WFI) sensor chip assembly (SCA). Two proton energies, 64 and 9 MeV, are explored using one detector per energy. Prerad results show an RTS part-to-part variability that is highly correlated with initial dark current variability. Prerad and post-rad RTS pixels share the same physical characteristics, suggesting a common physical origin. RTS pixel occurrence and location are also found to be very sensitive to room-temperature annealing. Results show that the RTS pixel population after irradiation approximates 0.037% of the pixels in the worst case, thus resulting in a very limited impact on the sensor’s performance degradation up to the proton fluences in this study.

Published
2024
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7. Effects of X-Ray and γ-Ray Irradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs

Author

Jouni, Ali, Mamdy, Bastien, Malherbe, Victor, Lalucaa, Valerian, Virmontois, Cedric, Gasiot, Gilles, and Goiffon, Vincent

Abstract

X-ray and $\gamma $ -ray irradiations are performed on frontside-illuminated (FSI) 2-D-planar and backside-illuminated (BSI) 3-D-stacked CMOS single-photon avalanche diodes (SPADs). Different degradations are observed for nearly the same deposited total ionizing dose (TID). The 2-D SPADs are only slightly degraded, with a dark count rate (DCR), which increases after 320 krad(SiO2) with X-rays, while the DCR spectrum after 300 krad(SiO2) with $\gamma $ -rays is spread toward high DCR (3 to 4 decade increase). As these SPADs are less sensitive to ionizing radiation effects, this suggests a strong domination of the displacement damage contribution of $\gamma $ -rays due to secondary electrons induced by Compton scattering, leading to point defects inside the silicon bulk. A large DCR tail in the distribution is also observed with 3-D-stacked SPAD pixels, but the histogram peak is close to the one caused by X-rays. This suggests that 3-D-stacked SPADs are more sensitive to ionizing radiation due to a larger Si/SiO2 interface area that can be degraded and a designed electric field imposed by the BSI configuration that maximizes charge collections in the avalanche region. Activation energy measurements confirm this result, by comparing data with a 62-MeV proton irradiation. The DCR alteration dependence with the SPAD voltage during X-ray irradiations is also studied, with an increasing degradation with the SPAD bias. Then, the random telegraph signal (RTS) behavior of the DCR is studied: while X-rays do not induced DCR fluctuations, different RTS characteristics are observed between the two technologies, suggesting a major role of point defects. Comparisons with proton irradiations and an annealing study strengthen this assumption.

Published
2024
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8. Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

Author

Benfante, Marco, Reverchon, Jean-Luc, Durnez, Clementine, Virmontois, Cedric, Demiguel, Stephane, and Goiffon, Vincent

Abstract

In this work, we study the dark current random telegraph signal (DC-RTS) on 14.4-MeV proton-irradiated InGaAs single photodiodes. The analyzed diodes showed a two-level DC-RTS. DC-RTS amplitudes and lifetimes of the level “high” and level “low” are thermally activated. Moreover, a reverse bias dependence of the lifetimes of the levels has been observed.

Published
2024
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10. Comments by the Editors

Author

Fleetwood, Dan, primary, Quinn, Heather, additional, Robinson, William, additional, Moss, Steven, additional, Goiffon, Vincent, additional, Paillet, Philippe, additional, Ding, Lili, additional, Loveless, Daniel, additional, Black, Jeffrey, additional, Faccio, Federico, additional, and Barth, Janet, additional

Published
2023
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11. Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications

Author

Durnez, Clémentine, primary, Virmontois, Cédric, additional, Panuel, Pierre, additional, Antonsanti, Aubin, additional, Goiffon, Vincent, additional, Estribeau, Magali, additional, Saint-Pé, Olivier, additional, Lalucaa, Valérian, additional, Berdin, Erick, additional, Larnaudie, Franck, additional, Belloir, Jean-Marc, additional, Codreanu, Catalin, additional, and Chavanne, Ludovic, additional

Published
2023
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12. Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Author

Jouni, Ali, primary, Sicre, Mathieu, additional, Malherbe, Victor, additional, Mamdy, Bastien, additional, Thery, Thomas, additional, Belloir, Jean-Marc, additional, Soussan, Dimitri, additional, De Paoli, Serge, additional, Lorquet, Vincent, additional, Lalucaa, Valérian, additional, Virmontois, Cédric, additional, Gasiot, Gilles, additional, and Goiffon, Vincent, additional

Published
2023
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15. Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs Photodiodes

Author

Benfante, Marco, Reverchon, Jean-Luc, Virmontois, Cedric, Demiguel, Stephane, and Goiffon, Vincent

Abstract

The increase in the dark current induced by proton irradiation is studied and the definition of an InGaAs damage factor is discussed. We investigate the dependencies of the radiation-induced dark current increase on the doping level, proton energy, and irradiation temperature. The doping level plays an important role in the dark current level because of electric field enhancement (EFE) effects in the thermal generation of carriers. If we call the increase in the dark current per proton the dark-current-related damage rate (DCDR), at low reverse bias, the less-doped photodiodes have higher DCDR, and at high reverse bias, the situation is inverted. The effect of the proton energy is discussed and the nonionizing energy loss (NIEL) scaling hypothesis is studied as a function of the reverse bias. At low reverse bias, we observe a higher DCDR for lower proton energy, which is consistent with the NIEL scaling hypothesis. At high reverse bias, however, the trend is inverted, and a lower DCDR is observed. Lastly, we observe a slightly higher DCDR for a lower irradiation temperature.

Published
2024
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16. Effect of Proton Energy and Bias Conditions During Irradiation on CMOS Single-Photon Avalanche Diodes

Author

Jouni, Ali, Malherbe, Victor, Mamdy, Bastien, Thery, Thomas, Correas, Vincent, De Paoli, Serge, Lalucaa, Valerian, Virmontois, Cedric, Gasiot, Gilles, and Goiffon, Vincent

Abstract

Different proton energies were used to irradiate 2-D- and 3-D-CMOS single-photon avalanche diodes (SPADs) under different biasing conditions. Discrepancies are highlighted between biased SPADs (active irradiation) and unbiased SPADs (passive irradiation) in terms of mean dark count rate (DCR) degradation. Non-ionizing energy loss (NIEL) scaling of the average DCR is then discussed for the two technologies studied, followed by a discussion on the median DCR increase. Coulomb scattering, nuclear elastic and inelastic interactions, and their contributions to the total NIEL are used to explain similarities and differences observed for the mean and the median DCR increase, depending on the proton energy. Radiation tolerance comparison between 2-D- and 3-D-technology is also tackled. Finally, DCR increase distributions are investigated to understand and confirm the analysis of the mean and median DCR alteration.

Published
2024
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17. Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging.

Author

Marcelot, Olivier, Morvan, Marjorie, Salih Alj, Antoine, Demiguel, Stephane, Virmontois, Cedric, Rouvie, Anne, Estribeau, Magali, and Goiffon, Vincent

Subjects
CMOS image sensors, IMAGE sensors, COMPLEMENTARY metal oxide semiconductors, CHARGE coupled devices, CAPACITIVE sensors, CHARGE transfer, CHARGE exchange
Abstract

This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology. The CDTI transfer register offers a charge transfer inefficiency lower than 10 − 4 and a low dark current o 0.11 nA / cm 2 at room temperature. In this work, the timing diagram is adapted to use this CDTI transfer register in an electron multiplication mode. The results highlight some limitations of this device in such an EM configuration: for instance, an unexpected increase in the dark current is observed. A design modification is then proposed to overcome these limitations and rely on the addition of an electrode on the top of the register. Thus, this new device preserves the good transfer performance of the register while adding an electron multiplication function. Technology computer-aided design (TCAD) simulations in 2D and 3D are performed with this new design and reveal a very promising structure. [ABSTRACT FROM AUTHOR]

Published
2023
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20. Study of Proton-Induced Defects in 40-nm CMOS SPADs

Author

Jouni, Ali, primary, Malherbe, Victor, additional, Mamdy, Bastien, additional, Thery, Thomas, additional, Sicre, Mathieu, additional, Soussan, Dimitri, additional, Lorquet, Vincent, additional, De Paoli, Serge, additional, Belloir, Jean-Marc, additional, Lalucaa, Valerian, additional, Virmontois, Cedric, additional, Gasiot, Gilles, additional, and Goiffon, Vincent, additional

Published
2023
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24. Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities

Author

Paillet, Philippe, primary, Girard, Sylvain, additional, Goiffon, Vincent, additional, Duhamel, O., additional, Morana, Adriana, additional, Lambert, Damien, additional, De Michele, Vincenzo, additional, Campanella, Cosimo, additional, Melin, Gilles, additional, Robin, Thierry, additional, Vidalot, Jeoffray, additional, Meyer, Arnaud, additional, Boukenter, Aziz, additional, Ouerdane, Youcef, additional, Marin, Emmanuel, additional, Glebov, Vladimir Yu., additional, and Pien, Gregory, additional

Published
2022
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27. Comments by the Editors

Author

Fleetwood, Dan, primary, Brown, Dennis, additional, Quinn, Heather, additional, Robinson, William, additional, Moss, Steven, additional, Goiffon, Vincent, additional, Paillet, Philippe, additional, Ding, Lili, additional, and Loveless, Daniel, additional

Published
2022
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28. Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose

Author

Salih Alj, Antoine, Touron, Pierre, Roy, Francois, Demiguel, Stephane, Michelot, Julien, Virmontois, Cedric, Magnan, Pierre, and Goiffon, Vincent

Abstract

This work presents a new type of charge-coupled device (CCD) manufactured using a CMOS process and featuring capacitive deep trench isolation (CDTI). The device is used in a multi-pinned phase mode (MPP) enabling almost constant oxide interface passivation. Flatband shift, dark current, and charge transfer inefficiency (CTI) induced by total ionizing dose (TID) are investigated. Despite the increase of interface states, results show that dark current can be efficiently mitigated by the use of short charge transfer duration, avoiding full interface depletion and free charge generation. It is further shown that trapping by interface states is only lightly affecting CTI as the buried channel keeps electrons far from interfaces. Finally, a clear correlation between flatband shift with full well charge (FWC) reduction is established.

Published
2023
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34. Comments by the Editors

Author

Fleetwood, Dan, primary, Brown, Dennis, additional, Quinn, Heather, additional, Robinson, William, additional, Moss, Steven, additional, Goiffon, Vincent, additional, Paillet, Philippe, additional, Ding, Lili, additional, and Loveless, Daniel, additional

Published
2021
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36. Electric Field-Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

Author

Benfante, Marco, Reverchon, Jean-Luc, Gilard, Olivier, Demiguel, Stephane, Virmontois, Cedric, Durnez, Clementine, Dartois, Thierry, and Goiffon, Vincent

Abstract

Dark current degradation due to 49.7 MeV proton irradiation is studied on lattice-matched indium gallium arsenide (InGaAs) p-i-n photodiodes. This degradation is described in terms of electric field-enhanced Shockley–Read–Hall (SRH) generation current in the depletion region. In this article, we present a model of the radiation-induced generation current which includes the role of the electric field through the generation rate field enhancement factor (GRFEF). Using a combination of dark current–voltage and capacitance–voltage measurements, an experimental GRFEF is extracted for the thermal generation rate. This GRFEF has been used to define a new damage factor for InGaAs at low electric field that has been compared to previous literature studies. As a final result, the low-field generation lifetime degradation as a function of the fluence has been extracted.

Published
2023
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40. Finding Reaction Pathways and Transition States: r-ARTn and d-ARTn as an Efficient and Versatile Alternative to String Approaches

Author

Jay, Antoine, primary, Huet, Christophe, additional, Salles, Nicolas, additional, Gunde, Miha, additional, Martin-Samos, Layla, additional, Richard, Nicolas, additional, Landa, Georges, additional, Goiffon, Vincent, additional, De Gironcoli, Stefano, additional, Hémeryck, Anne, additional, and Mousseau, Normand, additional

Published
2020
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41. Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

Author

Le Roch, Alexandre, primary, Virmontois, Cedric, additional, Paillet, Philippe, additional, Belloir, Jean-Marc, additional, Rizzolo, Serena, additional, Marcelot, Olivier, additional, Dewitte, Hugo, additional, Van Uffelen, Marco, additional, Casellas, Laura Mont, additional, Magnan, Pierre, additional, and Goiffon, Vincent, additional

Published
2020
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42. Comments by the Editors

Author

Fleetwood, Dan, primary, Brown, Dennis, additional, Quinn, Heather, additional, Robinson, William, additional, Moss, Steven, additional, Goiffon, Vincent, additional, Paillet, Philippe, additional, and Ding, Lili, additional

Published
2020
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44. Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Author

Goiffon, Vincent, primary, Jay, Antoine, additional, Paillet, Philippe, additional, Bilba, Teddy, additional, Deladerriere, Theo, additional, Beaugendre, Guillaume, additional, Le Roch, Alexandre, additional, Dion, Arnaud, additional, Virmontois, Cedric, additional, Belloir, Jean-Marc, additional, and Gaillardin, Marc, additional

Published
2020
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47. Comments by the Editors

Author

Fleetwood, Dan, Quinn, Heather, Moss, Steven, Goiffon, Vincent, Paillet, Philippe, Ding, Lili, Loveless, Daniel, Black, Jeffrey, Faccio, Federico, Barth, Janet, Meng, Cui, and Zhang, Enxia

Abstract

The August 2024 special issue of the IEEE Transactions on Nuclear Science (TNS) contains more than 60 peer-reviewed journal articles prepared on the basis of presentations made at the 2023 Conference on Radiation and Its Effects on Components and Systems (RADECS), held in Toulouse, France, September 25–29, 2023. Additional papers presented at RADECS 2023 are available in the conference proceedings, available through IEEE Xplore.

Published
2024
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48. CAMRAD: Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations

Author

Goiffon, Vincent, Allanche, Timothé, Muller, Cyprien, Girard, Sylvain, Paillet, Philippe, Macé, Jean-Reynald, Osmond, Mélanie, Burnichon, P., Plumeri, Stéphane, Baudu, J-P, Boukenter, Aziz, Magnan, Pierre, Rizzolo, Serena, Corbière, Franck, Duhamel, Olivier, Rousson, Johanna, Desjonqueres, H., Molina, Romain, Ouerdane, Y., Lépine, Thierry, Clerc, Raphael, Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), Laboratoire Hubert Curien (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS), DAM Île-de-France (DAM/DIF), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ORANO, Institut de Radioprotection et de Sûreté Nucléaire (IRSN), OPTSYS, and Agence Nationale pour la Gestion des Déchets Radioactifs (ANDRA)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

49. Radiation Effects on the Photometric Budget of a MGy Radiation-Hardened Camera

Author

Muller, Cyprien, Allanche, Timothé, Paillet, Philippe, Duhamel, Olivier, Goiffon, Vincent, Rizzolo, Serena, Lépine, Thierry, Ouerdane, Y., Boukenter, Aziz, Girard, Sylvain, DAM Île-de-France (DAM/DIF), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Hubert Curien (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS), and Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; We characterized the response of different subparts of a color-imaging camera at 1MGy (SiO2), namely white LEDs and radiation-hardened glasses and image sensor, to evaluate its photometric losses and potential color change under radiations.

Published
2018

50. Méthode de mesure de l'évolution de l'atténuation induite par radiation dans des verres optiques pendant et après irradiation

Author

Allanche, Timothé, Girard, Sylvain, Paillet, Philippe, Goiffon, Vincent, Muller, Cyprien, Boukenter, Aziz, Ouerdane, Y., Laboratoire Hubert Curien (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS), DAM Île-de-France (DAM/DIF), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

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