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38 results on '"Goffard, Julie"'

1. Synthesis and SERS application of SiO2@Au nanoparticles

Author

Saini, Apurve, Maurer, Thomas, Lorenzo, Irene Izquierdo, Santos, Andre Ribeiro, Beal, Jérémie, Goffard, Julie, Gérard, Davy, Vial, Alexandre, and Plain, Jérôme

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

In this letter, we report a chemical route for synthesizing SiO2@Au core-shell nanoparticles. The process includes four steps: i) preparation of the silica cores, ii) grafting gold nanoparticles over SiO2 cores, iii) priming of the silica-coated gold nanoparticles with 2 and 10 nm gold colloids and finally iv) formation of complete shell. The optical extinction spectra were experimentally measured and compared to numerical calculations in order to confirm the dimensions deduced from SEM images. Finally, the potential of such core-shell nanoparticles for biosensing was probed by means of Surface Enhanced Raman Scattering measurements and revealed higher sensitivities with much lower gold quantity of such core-shell nanoparticles compared to Au nanoparticles exhibiting similar diameters.

Published
2014

3. Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts

Author

Gouillart, Louis, Cattoni, Andrea, Chen, Wei-Chao, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, Edoff, Marika, Collin, Stephane, Gouillart, Louis, Cattoni, Andrea, Chen, Wei-Chao, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, Edoff, Marika, and Collin, Stephane

Abstract

Cu(In,Ga)Se-2-based (CIGS) solar cells with ultrathin (<= 500 nm) absorber layers suffer from the low reflectivity of conventional Mo back contacts. Here, we design and investigate ohmic and reflective back contacts (RBC) made of multilayer stacks that are compatible with the direct deposition of CIGS at 500 degrees C and above. Diffusion mechanisms and reactions at each interface and in the CIGS layer are carefully analyzed by energy dispersive X-ray (EDX)/scanning transmission electron microscopy (STEM). It shows that the highly reflective silver mirror is efficiently encapsulated in ZnO:Al layers. The detrimental reaction between CIGS and the top In2O3:Sn (ITO) layer used for ohmic contact can be mitigated by adding a 3 nm thick Al2O3 layer and by decreasing the CIGS coevaporation temperature from 550 degrees C to 500 degrees C. It also improves the compositional grading of Ga toward the CIGS back interface, leading to increased open- circuit voltage and fill factor. The best ultrathin CIGS solar cell on RBC exhibits an efficiency of 13.5% (+1.0% as compared to our Mo reference) with a short-circuit current density of 28.9 mA/cm(2) (+2.6 mA/cm(2)) enabled by double-pass absorption in the 510 nm thick CIGS absorber. RBC are easy to fabricate and could benefit other photovoltaic devices that require highly reflective and conductive contacts subject to high temperature processes.

Published
2021
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4. Fabrication and optical characterization of ultrathin III-V transferred heterostructures for hot-carrier absorbers

Author

Giteau, Maxime, Watanabe, Kentaroh, Miyashita, Naoya, Sodabanlu, Hassanet, Suchet, Daniel, Goffard, Julie, Delamarre, Amaury, Tamaki, Ryo, Jehl, Zacharie, Lombez, Laurent, Sugiyama, Masakazu, Cattoni, Andrea, Collin, Stéphane, Guillemoles, Jean-François, Okada, Yoshitaka, Tokyo University of Science [Tokyo], Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Fabrication, Materials science, Band gap, Population, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, law, 0103 physical sciences, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, education, ComputingMilieux_MISCELLANEOUS, Power density, 010302 applied physics, education.field_of_study, [PHYS.PHYS]Physics [physics]/Physics [physics], business.industry, Photovoltaic system, Heterojunction, 021001 nanoscience & nanotechnology, Light intensity, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

A hot-carrier solar cell (HCSC) is a high-efficiency photovoltaic concept where electrons and holes are at a higher temperature than the lattice, allowing an additional thermoelectric energy conversion. There are two requirements for a HCSC: establishing a hot-carrier population and converting the temperature into extra voltage through energy-selective contacts. We focus on the generation of hot carriers, and the design of absorbers that can make this generation easier. Fundamentally, this requires to increase the power density absorbed per volume unit, so the photocarriers cannot fully thermalize (phonon bottleneck). Beyond simply increasing the light intensity, the main control knobs to favor hot carriers include reducing the thickness of the absorber, increasing its absorptivity, and reducing its bandgap. In this proceeding, we report the fabrication of structures that aim at measuring the influence of these different parameters. We justify our choices for sample structure and fabrication method from the need for high thermal conductivity, in order to prevent lattice heating. We characterize our structures in order to determine precisely the final thickness of all layers, and the absorptivity of the absorber layer. These samples are to be used for an analysis of the temperature with many variable parameters, in order to better understand the thermalization mechanisms and design better absorbers. Ultimately, our objective is to implement all solutions together in order to evidence a hot carrier population under concentrated sunlight illumination.

Published
2020

5. Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations

Author

Lontchi, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro M. P., Goffard, Julie, Cattoni, Andrea, Gouillart, L., Collin, Stephane, Gusak, Viktoria, Flandre, Denis, Lontchi, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro M. P., Goffard, Julie, Cattoni, Andrea, Gouillart, L., Collin, Stephane, Gusak, Viktoria, and Flandre, Denis

Abstract

We present a simulation strategy using ATLAS-2D to optimize the back-contact hole grid (i.e., size and pitch of openings) of the Al 2 O 3 -rear-passivation layer in ultrathin Cu(In,Ga)Se 2 photovoltaic cells. We first discuss and compare our simulation model with a series of experimental nonpassivated and passivated cells to decouple the crucial passivation parameters. The simulation results follow the experimental trends, highlighting the beneficial effects of the passivation on the cell performances. Furthermore, it stresses the influence of the passivation quality at the Al 2 O 3 /Cu(In,Ga)Se 2 (CIGS) interface and of the contact resistance at the Mo/CIGS interface within the openings. Further simulations quantify significant improvements in short-circuit current and open-circuit voltage for different sizes of openings in the Al 2 O 3 layer, relative to an excellent passivation quality (i.e., high density of negative charges in the passivation layer). However, a degradation is predicted for a poor passivation (i.e., low density of such charges) or a high contact resistance. Consequently, we point out an optimum in efficiency when varying the opening widths at fixed hole-pitch and fixed contact resistance. At equivalent contact resistance, simulations predict that the sizes of the pitch and openings can be increased without optimal performance losses when maintaining a width to pitch ratio around 0.2. This simulation trends have been confirmed by a series of experiments, indicating that it is crucial to care about the dimensions of the opening grid and the contact resistance of passivated cells. These simulation results provide significant insights for optimal cell design and characterizations of passivated UT-CIGS PV cells.

Published
2020
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6. Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells

Author

Gouillart, Louis, Chen, Wei-Chao, Cattoni, Andrea, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, Edoff, Marika, Collin, Stéphane, Gouillart, Louis, Chen, Wei-Chao, Cattoni, Andrea, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, Edoff, Marika, and Collin, Stéphane

Abstract

We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In 2 O 3 :Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm 2 (+2.2 mA/cm 2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).

Published
2020
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7. Ultra-thin CIGS: 2D Modelling and impactful results for optimal cell design and characterizations

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Lontchi Jioleo, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro, Goffard, Julie, Cattoni, Andrea, Collin, Stéphane, Flandre, Denis, 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Lontchi Jioleo, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro, Goffard, Julie, Cattoni, Andrea, Collin, Stéphane, Flandre, Denis, and 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)

Abstract

We present a 2D model of an Al2O3-passivated ultrathin Cu(In,Ga)Se2 photovoltaic cell with rear-contact pattern. Simulation results follow the experimental trends, highlighting the significant effects of the passivation quality and of the Mo/CIGS contact resistance. Improvements in Jsc and Voc are discussed for different sizes of openings, relative to an excellent passivation quality (i.e. high density of negative charges in the passivation layer). However, a degradation is predicted for a poor passivation (i.e. low density of such charges) or a high contact resistance. We point out an optimum in efficiency when varying the opening widths at fixed hole-pitch and fixed contact resistance for a width to pitch ratio around 0.2. These simulation results provide significant insights for optimal cell design and characterizations of passivated UT-CIGS PV cells.

Published
2020

8. Ultra-thin CIGS : 2D Modelling and impactful results for optimal cell design and characterizations

Author

Lontchi, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro, Goffard, Julie, Cattoni, Andrea, Collin, Stéphane, Flandre, Denis, Lontchi, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salomé, Pedro, Goffard, Julie, Cattoni, Andrea, Collin, Stéphane, and Flandre, Denis

Abstract

We present a 2D model of an Al 2 O 3 -passivated ultrathin Cu(In, Ga)Se 2 photovoltaic cell with rear-contact pattern. Simulation results follow the experimental trends, highlighting the significant effects of the passivation quality and of the Mo/CIGS contact resistance. Improvements in Jsc and Voc are discussed for different sizes of openings, relative to an excellent passivation quality (i.e. high density of negative charges in the passivation layer). However, a degradation is predicted for a poor passivation (i.e. low density of such charges) or a high contact resistance. We point out an optimum in efficiency when varying the opening widths at fixed hole-pitch and fixed contact resistance for a width to pitch ratio around 0.2. These simulation results provide significant insights for optimal cell design and characterizations of passivated UT-CIGS PV cells.

Published
2020
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10. Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations

Author

Lontchi, Jackson, primary, Zhukova, Maria, additional, Kovacic, Milan, additional, Krc, Janez, additional, Chen, Wei-Chao, additional, Edoff, Marika, additional, Bose, Sourav, additional, Salome, Pedro M. P., additional, Goffard, Julie, additional, Cattoni, Andrea, additional, Gouillart, L., additional, Collin, Stephane, additional, Gusak, Viktoria, additional, and Flandre, Denis, additional

Published
2020
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14. Experimental investigation of performances enhancement in hot carrier solar cells: improvements and perspectives (Conference Presentation)

Author

Lombez, Laurent, primary, Nguyen, Dac-Trung, additional, Gibelli, François, additional, Goffard, Julie, additional, Cattoni, Andrea, additional, Boyer-Richard, Soline, additional, Le Corre, Alain, additional, Durand, Olivier, additional, Collin, Stéphane, additional, and Guillemoles, Jean-François, additional

Published
2019
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15. Light absorption enhancement in ultra-thin layers for hot-carrier solar cells: first developments towards the experimental demonstration of an enhanced hot-carrier effect with light trapping

Author

Miyashita, Naoya, primary, Goffard, Julie, primary, Jehl, Zacharie, primary, Tamaki, Ryo, primary, Lombez, Laurent, primary, Suchet, Daniel, primary, Giteau, Maxime, primary, Okada, Yoshitaka, primary, Guillemoles, Jean-François, primary, Collin, Stephane, primary, Cattoni, Andrea, primary, Watanabe, Kentaroh, primary, Delamarre, Amaury, primary, Sodabanlu, Hassanet, primary, and Sugiyama, Masakazu, primary

Published
2019
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17. Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts.

Author

Gouillart, Louis, Cattoni, Andrea, Chen, Wei‐Chao, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, Edoff, Marika, and Collin, Stéphane

Subjects
COPPER-zinc alloys, SOLAR cells, SILICON solar cells, OHMIC contacts, SHORT-circuit currents, TRANSMISSION electron microscopy, ENGINEERING
Abstract

Cu(In,Ga)Se2‐based (CIGS) solar cells with ultrathin (≤500 nm) absorber layers suffer from the low reflectivity of conventional Mo back contacts. Here, we design and investigate ohmic and reflective back contacts (RBC) made of multilayer stacks that are compatible with the direct deposition of CIGS at 500°C and above. Diffusion mechanisms and reactions at each interface and in the CIGS layer are carefully analyzed by energy dispersive X‐ray (EDX)/scanning transmission electron microscopy (STEM). It shows that the highly reflective silver mirror is efficiently encapsulated in ZnO:Al layers. The detrimental reaction between CIGS and the top In2O3:Sn (ITO) layer used for ohmic contact can be mitigated by adding a 3 nm thick Al2O3 layer and by decreasing the CIGS coevaporation temperature from 550°C to 500°C. It also improves the compositional grading of Ga toward the CIGS back interface, leading to increased open‐ circuit voltage and fill factor. The best ultrathin CIGS solar cell on RBC exhibits an efficiency of 13.5% (+1.0% as compared to our Mo reference) with a short‐circuit current density of 28.9 mA/cm2 (+2.6 mA/cm2) enabled by double‐pass absorption in the 510 nm thick CIGS absorber. RBC are easy to fabricate and could benefit other photovoltaic devices that require highly reflective and conductive contacts subject to high temperature processes. [ABSTRACT FROM AUTHOR]

Published
2021
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18. Light absorption enhancement in ultra-thin layers for hot-carrier solar cells: first developments towards the experimental demonstration of an enhanced hot-carrier effect with light trapping.

Author

Giteau, Maxime, Kentaroh Watanabe, Naoya Miyashita, Sodabanlu, Hassanet, Goffard, Julie, Delamarre, Amaury, Suchet, Daniel, Ryo Tamaki, Jehl, Zacharie, Lombez, Laurent, Masakazu Sugiyama, Cattoni, Andrea, Collin, Stéphane, Guillemoles, Jean-François, and Yoshitaka Okada

Published
2018
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19. Light Trapping in Ultrathin CIGS Solar Cells withNanostructured Back Mirrors

Author

Goffard, Julie, Colin, Clément, Mollica, Fabien, Cattoni, Andrea, Sauvan, Christophe, Lalanne, Philippe, Guillemoles, Jean-Francois, Naghavi, Negar, Collin, Stéphane, Goffard, Julie, Colin, Clément, Mollica, Fabien, Cattoni, Andrea, Sauvan, Christophe, Lalanne, Philippe, Guillemoles, Jean-Francois, Naghavi, Negar, and Collin, Stéphane

Abstract

Novel architectures for light trapping in ultrathinCu(In,Ga)Se2 (CIGS) solar cells are proposed and numericallyinvestigated. They are composed of a flat CIGS layer withnanostructured back mirrors made of highly reflective metals.Multi-resonant absorption is obtained for two different patternsof nanostructured mirrors. It leads to a dramatic increase in theshort-circuit current predicted for solar cells with very thin CIGSlayers. We analyze the resonance phenomena and the density ofphotogenerated carriers in the absorber. We discuss the impactof the material used for the buffer layer (CdS and ZnS) and theback mirror (Mo, Cu, Au, and Ag). We investigate various CIGSthicknesses from 100 to 500 nm, and we compare our numericalresults with experimental data taken from the literature. Wepredict a short-circuit current of Jsc = 33.6 mA/cm2 for a realisticsolar cell made of a 200-nm-thick CIGS absorber with a coppernanostructured mirror. It opens a way toward ultrathin CIGSsolar cells with potential conversion efficiencies up to 20%.

Published
2017
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21. 200nm-thick GaAs solar cells with a nanostructured silver mirror

Author

Chen, Hung-Ling, primary, Cattoni, Andrea, additional, Vandamme, Nicolas, additional, Goffard, Julie, additional, Lemaitre, Aristide, additional, Delamarre, Amaury, additional, Behaghel, Benoit, additional, Watanabe, Kentaroh, additional, Sugiyama, Masakazu, additional, Guillemoles, Jean-Francois, additional, and Collin, Stephane, additional

Published
2017
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23. Exalter l’émission de nanocristaux de silicium

Author

Gérard, Davy, Goffard, Julie, Miska, Patrice, Plain, Jerome, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and VU VAN, Jean-Baptiste

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Dans cette communication, nous présenterons des résultats obtenus sur l’exaltation de l’émission spontanée issue de nanocristaux de silicium. Ces nanocristaux sont préparés par voie physique, grâce à une évaporation suivie d’un recuit à haute température (1040°C). Cette méthode permet de contrôler à la fois le diamètre des nanocristaux (ici 4 nm) et la distance à laquelle ils se trouvent de la surface. Des nanostructures métalliques sont ensuite déposées à la surface par lithographie électronique. Nous avons étudié l’effet des résonances plasmoniques supportées par des nanodisques d’or sur l ‘émission des nanocristaux. Une exaltation de l’émission des cristaux d’un facteur 5 a ainsi été démontrée lorsque la distance entre le plan de cristaux et les particules métalliques est de 8 nm. Nous présenterons également l’effet de nanobâtonnets d’or et d’argent sur l’émission et montrerons que des résonances plasmonique d’ordre plus élevé (quadrupole) affectent aussi l’émission des cristaux.

Published
2015

24. Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations

Author

Lontchi, Jackson, Zhukova, Maria, Kovacic, Milan, Krc, Janez, Chen, Wei-Chao, Edoff, Marika, Bose, Sourav, Salome, Pedro M. P., Goffard, Julie, Cattoni, Andrea, Gouillart, L., Collin, Stephane, Gusak, Viktoria, and Flandre, Denis

Abstract

We present a simulation strategy using ATLAS-2D to optimize the back-contact hole grid (i.e., size and pitch of openings) of the Al2O3-rear-passivation layer in ultrathin Cu(In,Ga)Se2 photovoltaic cells. We first discuss and compare our simulation model with a series of experimental nonpassivated and passivated cells to decouple the crucial passivation parameters. The simulation results follow the experimental trends, highlighting the beneficial effects of the passivation on the cell performances. Furthermore, it stresses the influence of the passivation quality at the Al2O3/Cu(In,Ga)Se2 (CIGS) interface and of the contact resistance at the Mo/CIGS interface within the openings. Further simulations quantify significant improvements in short-circuit current and open-circuit voltage for different sizes of openings in the Al2O3 layer, relative to an excellent passivation quality (i.e., high density of negative charges in the passivation layer). However, a degradation is predicted for a poor passivation (i.e., low density of such charges) or a high contact resistance. Consequently, we point out an optimum in efficiency when varying the opening widths at fixed hole-pitch and fixed contact resistance. At equivalent contact resistance, simulations predict that the sizes of the pitch and openings can be increased without optimal performance losses when maintaining a width to pitch ratio around 0.2. This simulation trends have been confirmed by a series of experiments, indicating that it is crucial to care about the dimensions of the opening grid and the contact resistance of passivated cells. These simulation results provide significant insights for optimal cell design and characterizations of passivated UT-CIGS PV cells.

Published
2020
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25. Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells

Author

Gouillart, Louis, Collin, Stephane, Chen, Wei-Chao, Cattoni, Andrea, Goffard, Julie, Riekehr, Lars, Keller, Jan, Jubault, Marie, Naghavi, Negar, and Edoff, Marika

Abstract

We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).

Published
2020
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26. Study of silicon nanocrystals coupled to localized surface plasmons

Author

Goffard, Julie, Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Université de Technologie de Troyes, Davy Gérard, Patrice Miska, and STAR, ABES

Subjects
Plasmons, Résonance plasmonique de surface, Nanosilicium, Théorie du, Couplage, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Surface plasmon resonance, Matching theory, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Nanosilicon, Plasmons (Physics)
Abstract

The discovery of photoluminescence of nanometric silicon paves the way to use silicon in optoelectronic devices. However this photoluminescence remains low and a lot of works aim at improving silicon optical properties. In this dissertation we study localized surface plasmons to improve optical properties of silicon nanocrystals. Thanks to the control of all geometrical parameters of silicon nanocrystals and metallic nanoparticles during the fabrication process, the coupling process between these two objects has been studied. The modification of silicon nanocrystals emission as a function of the distance, the size and the nature of metallic nanoparticles has been investigated. Thanks to the development of experimental optical characterization techniques we showed that silicon nanocrystals photoluminescence is modified both spectrally and spatially by localized surface plasmons. This work shows that it’s possible to enhance silicon’s optical properties and thus to devise optoelectronic devices with silicon and plasmons, La découverte de la photoluminescence du silicium sous sa forme nanométrique a ouvert la voie de l’utilisation du silicium dans les composants optoélectroniques. Cependant cette photoluminescence reste trop peu efficace et de nombreuses recherches portent aujourd’hui sur l’amélioration des propriétés optiques du silicium. Ce travail de thèse s’intéresse particulièrement à l’utilisation de plasmons de surface localisés afin d’améliorer les propriétés optiques de nanocristaux de silicium. Grâce au contrôle de tous les paramètres géométriques des nanocristaux de silicium et des nanoparticules métalliques lors de la fabrication des échantillons, il a été possible d’étudier les phénomènes physiques du couplage entre ces deux objets. Une modification de l’émission des nanocristaux de silicium en fonction de la distance, de la taille et de la nature des nanoparticules métalliques a été étudiée. Grâce au développement de différentes techniques de caractérisation optique, il a été possible de montrer que la photoluminescence des nanocristaux de silicium était modifiée à la fois spectralement et spatialement par les plasmons de surface localisés. Ce travail montre que grâce aux plasmons de surface localisés il est possible de grandement améliorer la photoluminescence des nanocristaux de silicium et ainsi il est possible d’imaginer de nouveaux composants optoélectroniques à base de silicium et de plasmons

Published
2014

27. Tailoring the luminescence from silicon nanocrystals with plasmonic nanostructures

Author

Goffard, Julie, Miska, Patrice, Plain, Jerome, Gérard, Davy, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and VU VAN, Jean-Baptiste

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

28. 200nm-Thick GaAs solar cells with a nanostructured silver mirror

Author

Chen, Hung-Ling, primary, Cattoni, Andrea, additional, Vandamme, Nicolas, additional, Goffard, Julie, additional, Lemaitre, Aristide, additional, Delamarre, Amaury, additional, Behaghel, Benoit, additional, Watanabe, Kentaroh, additional, Sugiyama, Masakazu, additional, Guillemoles, Jean-Francois, additional, and Collin, Stephane, additional

Published
2016
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29. Multi-resonant light trapping in ultrathin CIGS solar cells

Author

Goffard, Julie, primary, Cattoni, Andrea, additional, Mollica, Fabien, additional, Jubault, Marie, additional, Colin, Clement, additional, Guillemoles, Jean-Francois, additional, Lincot, Daniel, additional, Naghavi, Negar, additional, and Collin, Stephane, additional

Published
2016
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30. Tailoring the spontaneous emission from silicon nanocrystals with surface plasmons

Author

Goffard, Julie, Gérard, Davy, Miska, Patrice, Baudrion, Anne-Laure, Vergnat, Michel, Plain, Jerome, VU VAN, Jean-Baptiste, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT), and Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; The use of silicon nanocrystals (SiNC) in optoelectronic devices has risen from a decade thanks to the discovery of photoluminescence in porous silicon in 1991. However SiNCs exhibit a low quantum yield, which prevent from currently using them in optoelectronic devices. This problem can be bypassed thanks to the use of localized surface plasmons (LSP). Indeed LSPs can modify emitters’ photoluminescence by changing the optical local density of states and/or increasing the local excitation field. Numerous studies have been realized with different emitters but the study of LSP coupled with SiNC is scarce. Seminal studies by Biteen and coworkers have paved the way for increasing SiNCs’ performances with LSPs. In these preliminary works only the SiNCs’ emission wavelength was coupled to LSPs. In this work, we present a study where LSPs resonances are coupled simultaneously with the absorption and emission wavelengths of SiNCs. Our original fabrication method gives us the control of all the geometrical parameters that modify the SiNCs-LSPs coupling. The use of nanorods with different shapes and metals allows us to have two plasmon modes. One is located at the SiNC’s absorption wavelength and the other is located at the SiNC’s emission wavelength. The SiNC’s photoluminescence enhancement is thus due to two physical phenomena. To understand these phenomena, we study the influence on SiNC’s photoluminescence intensity, polarization and spatial redirection. We also extract the SiNCs’ radiative quantum yield enhancement in presence of these rods.

Published
2013

31. Light absorption enhancement in ultra-thin layers for hot-carrier solar cells: first developments towards the experimental demonstration of an enhanced hot-carrier effect with light trapping

Author

Freundlich, Alexandre, Lombez, Laurent, Sugiyama, Masakazu, Giteau, Maxime, Watanabe, Kentaroh, Miyashita, Naoya, Sodabanlu, Hassanet, Goffard, Julie, Delamarre, Amaury, Suchet, Daniel, Tamaki, Ryo, Jehl, Zacharie, Lombez, Laurent, Sugiyama, Masakazu, Cattoni, Andrea, Collin, Stéphane, Guillemoles, Jean-François, and Okada, Yoshitaka

Published
2019
Full Text
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32. Exaltation Plasmonique de la luminescence de nanocristaux de silicium

Author

Goffard, Julie, Gérard, Davy, Miska, Patrice, Baudrion, Anne-Laure, Vergnat, Michel, Plain, Jerome, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), VU VAN, Jean-Baptiste, Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT), and Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2012

33. Silicon nanocrystals coupled with gold nanoparticles

Author

Goffard, Julie, Gérard, Davy, Miska, Patrice, Baudrion, Anne-Laure, Vergnat, Michel, Plain, Jerome, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and VU VAN, Jean-Baptiste

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2012

34. Spontaneous light emission modification from silicon nanocrystals coupled with surface plasmons

Author

Goffard, Julie, Gérard, Davy, Miska, Patrice, Baudrion, Anne-Laure, Vergnat, Michel, Plain, Jerome, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), VU VAN, Jean-Baptiste, Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT), and Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2011

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