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Hereby the possible applications of oxide nanoparticles in the cancer diagnostics and therapy are presented. Cancer diseases are nowadays one of the most common causes of death in the highly-developed countries. Discussed will be the current clinical cancer detection methods with their shortcomings. The role of nanomedicine in cancer medicine and the potential applications of nanoparticles debated in the literature will be critically evaluated. In the second part, the most common methods for the nanoparticle synthesis will be discussed. Finally, the system for cancer detection based on the enhanced permeation-retention of multimodal high-k oxide nanoparticles doped with lanthanides will be proposed for both for themagnetic resonance imaging (non-gadolinium contrast agents) and for fluorescence guided biopsy and surgery.

In this work, the results of ellipsometric studies of thin films of broadband oxides (ZnO, TiO2, ZrO2) and broadband oxides doped with Al2O3 (Al2O3–ZnO, Al2O3–TiO2, Al2O3–ZrO2) are presented. All layers have been produced using the atomic layer deposition method. Ellipsometric studies were performed in the wavelength range of 193–1690 nm. Sellmeier and Cauchy models were used to describe the optical properties of the tested layers. Dispersion dependencies of refractive indices were determined for thin layers of broadband oxides on silicon substrates, and then for layers of Al2O3 admixture. The EDX investigations enabled estimation of the composition of the alloys. The Bruggeman effective medium approximation (EMA) model was used to determine the theoretical dependencies of the dispersion refractive indices of the studied alloys. The refractive index values determined using the Bruggeman EMA model are in good agreement with the values determined from the ellipsometric measurements. The doping of thin layers of ZnO, ZrO2 and TiO2 with Al2O3 enables the creation of anti-reflective layers and filters with a specific refractive index. [ABSTRACT FROM AUTHOR]

Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2–1.6 Å. At low temperatures (≤100 °C), the films grew faster and are structurally more disordered, amorphous and/or polycrystalline with crystal sizes up to 29 nm, compared to the films grown at higher temperatures. At high temperatures of 240 °C, the films are better crystallized with crystal sizes of 38–40 nm but grew slower. GPC, dielectric constant, and crystalline structure are improved by depositing at temperatures above 300 °C. The dielectric constant value and the roughness of the films have been determined for monoclinic HfO2, a mixture of orthorhombic and monoclinic, as well as for amorphous HfO2. Moreover, the present study shows that the increase in the dielectric constant of the films can be achieved by using ammonia water as an oxygen precursor in the ALD growth. The detailed investigations of the relationship between HfO2 properties and growth parameters presented here have not been reported so far, and the possibilities of fine-tuning and controlling the structure and performance of these layers are still being sought. [ABSTRACT FROM AUTHOR]

Calcination and microwave-assisted hydrothermal processing of precipitated zirconium dioxide are compared. Characterization of synthesized products of these two technologies is presented. The infiuence of thermal treatment up to 1200oC on the structural and spectroscopic properties of the so-obtained zirconium dioxide is examined. It was found that initial crystallization of material inhibits the crystal growth up to the 800oC (by means of XRD and TEM techniques), while the material crystallized from amorphous hydroxide precursor at 400oC, exhibits 26 nm sized crystallites already. It was found using the TG technique that the temperature range 100–200oC during the calcination process is equivalent to a microwave hydrothermal process by means of water content. Mass loss is estimated to be about 18%. Based on X-ray investigations it was found that the initial hydroxide precursor is amorphous, however, its luminescence activity suggests the close range ordering in a material.

This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfOxNy layers, up to 800 °C, was also investigated. The presented results demonstrated the correctness of the optimization methodology. The results also demonstrated the significant stability of hafnia-based layers at up to 800 °C. No electrical parameters or surface morphology deteriorations were demonstrated. The structural analysis revealed comparable electrical properties and significantly greater immunity to high-temperature treatment in HfOxNy layers formed using HiPIMS, as compared to those formed using the standard pulsed magnetron sputtering technique. The results presented in this study confirmed that the investigated hafnium oxynitride films, fabricated through the HiPIMS process, could potentially be used as a thermally-stable gate dielectric in self-aligned MOS structures and devices. [ABSTRACT FROM AUTHOR]