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Your search keyword '"Gnatyuk, D. L."' showing total 14 results
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14 results on '"Gnatyuk, D. L."'

9. Measurement of radio transparency of polycrystalline CVD-diamond in millimeter-wave range by free-space method

Author

null Ralchenko V. G., null Sovyk D. N., null Maltsev P. P., null Krapukhin D. V., null Zuev A. V., and null Gnatyuk D. L.

Abstract

Radio transparency of polycrystalline CVD-diamond disks with diameter up to 75 mm in millimeter-wave range was measured by free-space method. The structure of the disks was characterized by Raman spectroscopy and scanning electron microscopy. Dielectric loss tangent of the samples in the frequency range of 50-67 GHz was found to be in the range of 7.5· 10-3-8· 10-2, increasing with frequency. The transmission loss due to the radiation absorption is about 1%. Keywords: millimeter-waves, polycrystalline diamond, radio transparency.

Published
2022
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14. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz.

Author

Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu., Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., and Ustinov, V. M.

Subjects
BREAKDOWN voltage, ELECTRIC breakdown, OSCILLATIONS, ELECTRIC power, TRANSISTORS, ELECTRONICS
Abstract

The N-Al0.27Ga0.73N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L g (ranging from 170 nm to 0.5 μm) and gate widths W s (ranging from 100 to 1200 μm) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f t, the maximum oscillation frequency fmax, and the power gain MSG/MAG and Mason’s coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f t and fmax attain their maximum values of f t = 48 GHz and fmax = 100 GHz at L g = 170 nm and W g = 100 μm. The optimum values of W g and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al0.27Ga0.73N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz). [ABSTRACT FROM AUTHOR]

Published
2009
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