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1,247 results on '"Glass G"'

26. Ultra-highly doped Si(sub 1-x)Ge(sub x)(001): B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

Author

Kim, H., Glass, G., Desjardins, P., and Greene, J.E.

Subjects
Epitaxy -- Research, Germanium -- Spectra, Germanium -- Electric properties, Silicon compounds -- Electric properties, Physics
Abstract

Si(sub1-x)Ge(sub x)(001) layers doped with B concentrations C(sub B) between 2 x 10(super 16) and 2 x 10 (super 21) cm(super -3) are grown on Si(001)2x1 at T(sub s) = 500-700 degree C by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6, Ge2H6, and B2H6. TPD experiments show that the Ultra high B doping leads to the appearance of the replica peaks, corresponding to B- backbonded surface species.

Published
2001

33. ERF‐related craniosynostosis: The phenotypic and developmental profile of a new craniosynostosis syndrome

Author

Glass, G, O’Hara, J, Canham, N, Cilliers, D, Dunaway, D, Fenwick, A, Jeelani, N, Johnson, D, Lester, T, Lord, H, Morton, J, Nishikawa, H, Noons, P, Schwiebert, K, Shipster, C, Taylor-Beadling, A, Twigg, S, Vasudevan, P, Wall, S, Wilkie, A, and Wilson, L

Subjects
Adult, Male, Adolescent, phenotype, Infant, Newborn, intracranial pressure, Infant, Syndrome, Original Articles, facial dysmorphism, Repressor Proteins, Craniosynostoses, Young Adult, craniosynostosis, ERF, Child, Preschool, Mutation, Humans, Chiari‐1 malformation, Female, Original Article, Age of Onset, Child
Abstract

Mutations in the ERF gene, coding for ETS2 repressor factor, a member of the ETS family of transcription factors cause a recently recognized syndromic form of craniosynostosis (CRS4) with facial dysmorphism, Chiari‐1 malformation, speech and language delay, and learning difficulties and/or behavioral problems. The overall prevalence of ERF mutations in patients with syndromic craniosynostosis is around 2%, and 0.7% in clinically nonsyndromic craniosynostosis. Here, we present findings from 16 unrelated probands with ERF‐related craniosynostosis, with additional data from 20 family members sharing the mutations. Most of the probands exhibited multisutural (including pan‐) synostosis but a pattern involving the sagittal and lambdoid sutures (Mercedes‐Benz pattern) predominated. Importantly the craniosynostosis was often postnatal in onset, insidious and progressive with subtle effects on head morphology resulting in a median age at presentation of 42 months among the probands and, in some instances, permanent visual impairment due to unsuspected raised intracranial pressure (ICP). Facial dysmorphism (exhibited by all of the probands and many of the affected relatives) took the form of orbital hypertelorism, mild exorbitism and malar hypoplasia resembling Crouzon syndrome but, importantly, a Class I occlusal relationship. Speech delay, poor gross and/or fine motor control, hyperactivity and poor concentration were common. Cranial vault surgery for raised ICP and/or Chiari‐1 malformation was expected when multisutural synostosis was observed. Variable expressivity and nonpenetrance among genetically affected relatives was encountered. These observations form the most complete phenotypic and developmental profile of this recently identified craniosynostosis syndrome yet described and have important implications for surgical intervention and follow‐up.

Published
2019

36. Si(001):B gas-source molecular-beam epitaxy: boron surface segregation and its effect on film growth kinetics

Author

Kim, H., Glass, G., Spila, T., Taylor, N., Park, S.Y., Abelson, J.R., and Greene, J.E.

Subjects
Semiconductors -- Research, Silicon crystals, Effect of radiation on -- Research, Molecular beams -- Usage, Physics
Abstract

B-doped Si(100) films, with concentrations C (sub B) up to 1.7X10 (super 22) cubic cm, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts=500-800 degrees C. D2 temperature-programmed desorption spectra were used to determine B coverages theta B as a function of C (sub B) and Ts. As-deposited films were flash heated to desorb surface hydrogen, cooled and exposed to atomic deuterium until saturation coverage.

Published
1997

42. Airway area by acoustic reflection: the two-microphone method

Author

Louis, B., Glass, G., Kresen, B., and Fredberg, J.

Subjects
Acoustic imaging, Airway (Medicine) -- Measurement, Engineering and manufacturing industries, Science and technology
Abstract

This report deals with noninvasive imaging of airway geometry based upon information contained in acoustic reflections measured at the mouth. Here we describe a new theoretical approach that enables development of a new miniaturized apparatus. Unlike the single-transducer systems used currently, this new strategy is based upon a two-transducer system that is a variant of that suggested originally by Shroeder (1967). We have developed, implemented, and tested computational algorithms necessary to reconstruct airway dimensions from acoustic reflection data using this two-transducer strategy.

Published
1993

44. S8B-01 SESSION 8B

Author

Boonipat, T., primary, Asaad, M., additional, Lin, J., additional, Glass, G., additional, Stotland, M., additional, Mardini, S., additional, Boonipat, T., additional, and Abu-Ghname, A., additional

Published
2019
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45. S14-08 SESSION 14

Author

Glass, G. E., primary, O’Hara, J., additional, Canham, N., additional, Cilliers, D., additional, Dunaway, D., additional, Fenwick, A., additional, Jeelani, N.-O., additional, Johnson, D., additional, Lester, T., additional, Lord, H., additional, Morton, J., additional, Nishikawa, H., additional, Noons, P., additional, Shipster, C., additional, Schwiebert, K., additional, Taylor-Beadling, A., additional, Twigg, S., additional, Vasudevan, P., additional, Wall, S., additional, Wilkie, A. O. M., additional, and Wilson, L., additional

Published
2019
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49. X-band ultralow-noise maser amplifier performance

Author

Glass, G. W, Ortiz, G. G, and Johnson, D. L

Subjects
Lasers And Masers
Abstract

Noise temperature measurements of an 8440-MHz ultralow noise maser amplifier (ULNA) have been performed at subatmospheric, liquid-helium temperatures. The traveling-wave maser was operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.43 +/- 0.16 K at a physical temperature of 1.60 K. At this physical temperature, the observed gain per centimeter of ruby was 4.9 dB/cm. The amplifier had a 3-dB bandwidth of 76 MHz.

Published
1994

50. X-Band Ultra-Low Noise Maser Amplifier Performance

Author

Glass, G, Johnson, D, and Ortiz, G

Subjects
Lasers And Masers
Abstract

Noise temperature measurements of an 8440 MHz ultra-low noise maser amplifier (ULNA) have been performed at sub-atmospheric, liquid helium temperatures. The traveling wave maser operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.23 plus or minus 0.16 K at a physical temperature of 1.60 kelvin. At this physical temperature the observed gain per unit length of ruby was 4.6 dB/cm, and the amplifier had a 3 dB-bandwidth of 76 MHz.

Published
1993

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