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We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20 $\mu$m-thick sensors achieving around 20 ps. Uniform performance is attainable with optimized sheet resistance, making these sensors ideal for future timing detectors. Conversely, 20 $\mu$m-thick strip sensors exhibit higher jitter than similar pixel sensors, negatively impacting time resolution, despite reduced Landau fluctuations with respect to the 50 $\mu$m-thick versions. Additionally, it is observed that a low resistivity in strip sensors limits signal size and time resolution, whereas higher resistivity improves performance. This study highlights the importance of tuning the n$^{+}$ sheet resistance and suggests that further improvements should target specific applications like the Electron-Ion Collider or other future collider experiments. In addition, the detailed performance of four AC-LGADs sensor designs is reported as examples of possible candidates for specific detector applications. These advancements position AC-LGADs as promising candidates for future 4D tracking systems, pending the development of specialized readout electronics.

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the the range of hundreds of MHz. Here, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

Low-Gain Avalanche Diodes are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the Low-Gain Avalanche Diode paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While Low-Gain Avalanche Diodes are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of Low-Gain Avalanche Diodes: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to breakdown voltage. The signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

We present the first beam test results with centimeter-scale AC-LGAD strip sensors, using the Fermilab Test Beam Facility and sensors manufactured by the Brookhaven National Laboratory. Sensors of this type are envisioned for applications that require large-area precision 4D tracking coverage with economical channel counts, including timing layers for the Electron Ion Collider (EIC), and space-based particle experiments. A survey of sensor designs is presented, with the aim of optimizing the electrode geometry for spatial resolution and timing performance. Several design considerations are discussed towards maintaining desirable signal characteristics with increasingly larger electrodes. The resolutions obtained with several prototypes are presented, reaching simultaneous 18 micron and 32 ps resolutions from strips of 1 cm length and 500 micron pitch. With only slight modifications, these sensors would be ideal candidates for a 4D timing layer at the EIC.

4-dimensional (4D) trackers with ultra fast timing (10-30 ps) and very fine spatial resolution (O(few $\mu$m)) represent a new avenue in the development of silicon trackers, enabling new physics capabilities beyond the reach of the existing tracking detectors. This paper reviews the impact of integrating 4D tracking capabilities on several physics benchmarks both in potential upgrades of the HL-LHC experiments and in several detectors at future colliders, and summarizes the currently available sensor technologies as well as electronics, along with their limitations and directions for R$\&$D., Comment: 26 pages, contribution to Snowmass 2021

Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experiments, 2) the ongoing efforts towards dedicated MAPS for the Electron-Ion Collider (EIC) at BNL, for which the EIC Silicon Consortium was already instantiated, and 3) space-born applications for MeV $\gamma$-ray experiments with MAPS based trackers (AstroPix)., Comment: 25 pages, 18 figures, contribution to Snowmass 2021

We present measurements of AC-LGADs performed at the Fermilab's test beam facility using 120 GeV protons. We studied the performance of various strip and pad AC-LGAD sensors that were produced by BNL and HPK. The measurements are performed with our upgraded test beam setup that utilizes a high precision telescope tracker, and a simultaneous readout of up to 7 channels per sensor, which allows detailed studies of signal sharing characteristics. These measurements allow us to assess the differences in designs between different manufacturers, and optimize them based on experimental performance. We then study several reconstruction algorithms to optimize position and time resolutions that utilize the signal sharing properties of each sensor. We present a world's first demonstration of silicon sensors in a test beam that simultaneously achieve better than 6-10 micron position and 30 ps time resolution. This represents a substantial improvement to the spatial resolution than would be obtained with binary readout of sensors with similar pitch.

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2e15 neq/cm2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). This paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for several applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. In addition to high time resolution and thanks to the AC-coupling of the electrodes, LGAD silicon sensors can provide high resolution in the measurement of spatial coordinates of an incident minimum ionizing particle. Such AC-coupled LGADs, also known as AC-LGADs, are therefore considered as candidates for future detectors to provide 4-dimensional measurements in a single sensing device with 100$\%$ fill factor. This article presents the first characterization of an AC-LGAD sensor with a proton beam of 120 GeV momentum at Fermilab. The sensor consists of strips with 80 $\mu$m width, fabricated at Brookhaven National Laboratory. The signal properties, efficiency, spatial, and time resolution are presented. The experimental results show that the time resolution of such an AC-LGAD is compatible to standard LGADs with similar gain, and that AC-LGADs can be segmented with fine pitches as standard strip or pixel detectors.

Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit excellent timing performance. Since pads much larger than the substrate thickness are necessary to achieve a spatially uniform multiplication, a fine pad pixelation is difficult. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. At Brookhaven National Laboratory, we have designed and fabricated prototypes of AC-coupled LGAD sensors. The performance of small test structures with different particle beams from radioactive sources are shown., Comment: 12 pages, 10 figures

We developed a new front-end application specific integrated circuit (ASIC) for the upgrade of the Maia x-ray microprobe. The ASIC instruments 32 configurable front-end channels that perform either positive or negative charge amplification, pulse shaping, peak amplitude and time extraction along with buffered analog storage. At a gain of 3.6 V/fC, 1 $\mu$s peaking time and a temperature of 248 K, an electronic resolution of 13- and 10 electrons rms was measured with and without a SDD sensor respectively. A spectral resolution of 170 eV FWHM at 5.9 keV was obtained with an $^{55}$Fe source. The channel linearity was better than $\pm$ 1 % with rate capabilities up to 40 kcps. The ASIC was fabricated in a commercial 250 nm process with a footprint of 6.3 mm x 3.9 mm and dissipates 167 mW of static power.

Low-Gain Avalanche Detectors are gathering interest in the High-Energy Physics community thanks to their fast-timing and radiation-hardness properties, which are planned to be exploited, for example, in timing detectors for the upgrades of the ATLAS and CMS detectors at the High Luminosity LHC. This new technology has also raised interest for its possible application for photon detection in medical physics, imaging and photon science. The main characteristic of this type of device is a thin and highly-doped layer that provides internal and moderate gain, in the order of 10-20, that enhances the signal amplitude. Furthermore, the thin substrate of a few tens of microns allows fast carrier collection. This paper details on the fabrication technology, specifically developed at Brookhaven National Laboratory for the detection of minimum ionizing particles. The static electrical characterization and the gain measurements on prototypes will be reported, too., Comment: 13 pages, 9 figures

To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 {\mu}m thick n-on-p sensors with active edge, a second one composed of 100 and 130 {\mu}m thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented., Comment: 10 pages, 7 figures, to appear in the proceedings of the PSD11 conference, 3th-8th September 2017, Open University (Milton Keynes)

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings., Comment: 14 pages, 11 figures

We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes., Comment: 4 pages, 7 figures, 2015 Pisa Meeting

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given., Comment: 4 pages, 9 figures, conference record of 2015 IEEE NSS, San Diego (CA), 31/10-7/11/2015

In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track. The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2 MeV He microbeam scanning over a sub-100 lm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems [2]. In this report, we show that the Monte Carlo method [3] can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch., Comment: 10 pages, 8 figures, proceedings of the conference IPRD13, Siena (Italy)