Search

Uniform dispersion of nanosized secondary phases in bulk thermoelectric materials has proven to be an effective strategy to reduce the lattice part of thermal conductivity and improve the thermoelectric efficiency. In this work, reduced graphene oxide (rGO) was uniformly dispersed in the In0.5Co4Sb12 bulk material by ultrasonication. The formation of impurity phases of InSb and CoSb2 in the In-filled Co4Sb12 is inevitable, as observed from XRD and EPMA analyses. The Raman spectra of the nanocomposites showed broad peaks suggesting phonon softening and additional peaks corresponding to rGO. Electron transport was not affected by rGO addition, resulting in little change in the electrical resistivity and Seebeck coefficient. The lattice thermal conductivity of the bulk material was significantly reduced by the addition of a small amount of rGO, primarily attributed to the interface scattering of phonons. Hence, the highest zT of ∼1.53 at 773 K was achieved for the In0.5Co4Sb12/0.25 vol% rGO composite in the temperature range from 723 K to 773 K. [ABSTRACT FROM AUTHOR]

Ti2−xNiCoSnSb (x = 0.125, 0.250, 0.375, and 0.500) half Heusler (HH) high-entropy thermoelectric alloys were synthesized by the arc melting—ball milling—spark plasma sintering route. The impact of secondary phase content on the thermoelectric properties in these alloys was examined. Ni-rich intermetallic (Ni3Sn2, Ni3Sn4) compounds were observed; the intermetallic content increased for lower Ti content, e.g., Ti1.5NiCoSnSb. A Ni-rich full Heusler (FH) secondary phase was also observed. These results were consistent with first-principles calculations that show that the formation enthalpy of Ti1.5NiCoSnSb was higher than that of Ti2NiCoSnSb and the full Heusler (FH) TiNi2Sn phase. In lower Ti content samples, the electrical conductivity increased, and lattice thermal conductivity decreased at the expense of thermopower owing to higher FH and the Ni3Sn2 phase content. Ti1.5NiCoSnSb exhibited lower lattice thermal conductivity of 3.5 W/mK, compared to 5.4 W/mK at 823 K for Ti2NiCoSnSb due to increased phonon scattering at HH/Ni3Sn2 interfaces. But considering the decreasing power factor with lower Ti content, the maximum ZT obtained in Ti1.875NiCoSnSb (0.171 at 973 K) was only marginally higher than the value for Ti2NiCoSnSb. Further, compositional tuning is hence necessary to maximize the power factor. [ABSTRACT FROM AUTHOR]

In this study, aluminum, a p-block element, is substituted at the Cu(1) site, and its effect on the structural and thermoelectric properties of tetrahedrite Cu12−xAlxSb4S13 (x = 0.1, 0.25, 0.5, and 0.75) was investigated. The samples were prepared via solid-state synthesis followed by induction hot pressing. The theoretical calculations, using density functional theory (DFT), showed that the Al substitution results in lowering the band degeneracy near the Fermi level (EF) with EF moving towards the bandgap, indicating effective compensation of holes. The projected density of states (PDOS) revealed almost negligible hybridization of Al states with Cu 3d and S 3p states near EF, thus resulting in relatively low DOS near EF. The electrical resistivity and Seebeck coefficient increased with increasing Al content due to the compensation of holes and reduction of the charge carrier concentration. However, the Seebeck coefficient values were relatively low due to a low DOS near EF, as indicated by the DFT calculations. Although the electronic thermal conductivity (κe) decreased with increasing Al concentration, the magnitudes of the total thermal conductivity (κT) could not be reduced significantly. As a result, a maximum zT of 0.6 at 673 K was obtained for Cu11.9Al0.1Sb4S13. Based on the current study and previously reported results, the paper demonstrates how the phase stability and transport properties of the tetrahedrite are affected significantly by the nature of the substituent at the Cu(1) tetrahedral site. [ABSTRACT FROM AUTHOR]

Sn-doped TiFe0.5Ni0.5Sb1−xSnx (x = 0, 0.05, 0.1, 0.2) were synthesized by vacuum arc melting (VAM). In addition to the half-Heusler phase, secondary phases of Fe–Sb-rich compound and Ti-rich compounds were obtained after VAM. The alloys were then subjected to ball milling for 1 h and 5 h. Ball milling for 1h led to microcrystalline grains, while that for 5 h led to nanocrystalline grains. Ball milling followed by spark plasma sintering (SPS) at 1173 K led to significant reduction in size of secondary phases in the microstructure. The undoped sample exhibited a ZT of 0.008 at 873 K for both 1h and 5h BM-SPS samples. [ABSTRACT FROM AUTHOR]

Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by combining these two approaches—inserting In into the voids of skutterudite Co4Sb12 as well as dispersing nanoparticles (GaSb)—we have synthesized various samples via ball-milling and spark plasma sintering. InSb as the secondary phase of the matrix, mixed with GaSb, forms the solid solution Ga1−xInxSb. Nanocrystalline grains together with a few larger grains (10–30 μm) are found to be spread in In0.2Co4Sb12. The former is comprised of either InSb, GaSb or Ga1−xInxSb. Because of their identical space group and similar lattice parameters, InSb, GaSb and Ga1−xInxSb could not be detected separately in EBSD. High resolution transmission electron microscopy (HRTEM) was used to resolve different phases, which showed GaSb grains of size ∼10–30 nm and InSb grains of size ∼30–100 nm. Scattering of charge carriers at the interfaces of InSb, GaSb and Ga1−xInxSb as well as the matrix phases increased both the electrical resistivity and Seebeck coefficient. The multi-scale size distribution of grains, of both the matrix phase and the secondary phases, scattered phonons within a broad wavelength range, resulting in very low lattice thermal conductivities. As a result, an enhanced figure of merit of 1.4 was achieved for the (GaSb)0.1 + In0.2Co4Sb12 nanocomposite at 773 K. [ABSTRACT FROM AUTHOR]

Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by combining these two approaches—inserting In into the voids of skutterudite Co4Sb12 as well as dispersing nanoparticles (GaSb)—we have synthesized various samples via ball-milling and spark plasma sintering. InSb as the secondary phase of the matrix, mixed with GaSb, forms the solid solution Ga1−xInxSb. Nanocrystalline grains together with a few larger grains (10–30 μm) are found to be spread in In0.2Co4Sb12. The former is comprised of either InSb, GaSb or Ga1−xInxSb. Because of their identical space group and similar lattice parameters, InSb, GaSb and Ga1−xInxSb could not be detected separately in EBSD. High resolution transmission electron microscopy (HRTEM) was used to resolve different phases, which showed GaSb grains of size ∼10–30 nm and InSb grains of size ∼30–100 nm. Scattering of charge carriers at the interfaces of InSb, GaSb and Ga1−xInxSb as well as the matrix phases increased both the electrical resistivity and Seebeck coefficient. The multi-scale size distribution of grains, of both the matrix phase and the secondary phases, scattered phonons within a broad wavelength range, resulting in very low lattice thermal conductivities. As a result, an enhanced figure of merit of 1.4 was achieved for the (GaSb)0.1 + In0.2Co4Sb12 nanocomposite at 773 K. [ABSTRACT FROM AUTHOR]

A new single phase high entropy alloy, Ti2NiCoSnSb with half-Heusler (HH) structure is synthesized for the first time by vacuum arc melting (VAM) followed by ball-milling (BM). The BM step is necessary to obtain the single phase. Local electrode atom probe (LEAP) analysis showed that the elements are homogeneously and randomly distributed in the HH phase without any clustering tendency. When the BM was carried out for 1 hour on the VAM alloy, microcrystalline alloy is obtained with traces of Sn as secondary phase. When BM was carried out for 5 h, single HH phase formation is realized in nanocrystalline form. However, when the BM samples were subjected to Spark plasma sintering (SPS), secondary phases were formed by the decomposition of primary phase. Nanostructuring leads to simultaneous increase in S and σ with increasing temperature. The micro (1 h BM-SPS) and nanocrystalline (5 h BM-SPS) alloys exhibited a power factor (S2σ) of 0.57 and 1.02 mWm−1K−2, respectively, at 860 K. The microcrystalline sample had a total thermal conductivity similar to bulk TiNiSn sample. The nanocrystalline alloy exhibited a ZT of 0.047 at 860 K. The microcrystalline alloy showed a ZT to 0.144 at 860 K, in comparison to the nanocrystalline alloy. [ABSTRACT FROM AUTHOR]

Practical application of thermoelectric generators necessitates materials that combine high heat-to-electricity conversion efficiency with long-term functional stability under operation conditions. While Mg 2 (Si,Sn)-based materials exhibit promising thermoelectric properties and module prototypes have been demonstrated, their stability remains a challenge, demanding thorough investigation. Utilizing atomic force microscopy (AFM) and scanning electron microscopy (SEM), we investigate the surface degradation of a composite material comprising Si-rich and Sn-rich Mg 2 (Si,Sn) solid solutions. The investigation reveals a pronounced dependence of stability on Sn content, with the Sn-rich phase Mg 2 Si 0.13 Sn 0.87 displaying the formation of a nonprotective oxide layer. Subsequent AFM measurements provide evidence of dominating grain boundary diffusion of loosely bound Mg, compared to bulk diffusion, observed within a few days, ultimately resulting in a complete surface oxidation of the Sn-rich phase within several weeks. On the other hand, Mg 2 Si and Si-rich Mg 2 Si 0.80±0.05 Sn 0.20±0.05 remain stable against Mg diffusion to the surface even after prolonged exposure. Comparison with previous investigations confirms that the degradation rate is found to be highly dependent on the Sn content, with markedly higher rates observed for x = 0.87 compared to x = 0.70 in Mg 2 Si 1- x Sn x . These findings contribute to a better understanding of the stability challenges associated with Mg 2 (Si,Sn)-based materials, essential for the development of robust thermoelectric materials for practical applications.

Uniform dispersion of nanosized secondary phases in bulk thermoelectric materials has proven to be an effective strategy to reduce the lattice part of thermal conductivity and improve the thermoelectric efficiency. In this work, reduced graphene oxide (rGO) was uniformly dispersed in the In 0.5 Co 4 Sb 12 bulk material by ultrasonication. The formation of impurity phases of InSb and CoSb 2 in the In-filled Co 4 Sb 12 is inevitable, as observed from XRD and EPMA analyses. The Raman spectra of the nanocomposites showed broad peaks suggesting phonon softening and additional peaks corresponding to rGO. Electron transport was not affected by rGO addition, resulting in little change in the electrical resistivity and Seebeck coefficient. The lattice thermal conductivity of the bulk material was significantly reduced by the addition of a small amount of rGO, primarily attributed to the interface scattering of phonons. Hence, the highest zT of ∼1.53 at 773 K was achieved for the In 0.5 Co 4 Sb 12 /0.25 vol% rGO composite in the temperature range from 723 K to 773 K.

The thermoelectric efficiency of skutterudite materials can be improved by lowering the lattice thermal conductivity via the uniform dispersion of a nanosized second phase in the matrix of filled Co 4 Sb 12 . In this work, nanocomposites of Ba 0.3 Co 4 Sb 12 and InSb were synthesized using ball-milling and spark plasma sintering. The thermoelectric transport properties were studied from 4.2 to 773 K. The InSb nanoparticles of ∼20 nm were found to be dispersed in the Ba 0.3 Co 4 Sb 12 grains with a few larger grains of about 10 μm due to the agglomeration of the InSb nanoparticles. The +2 oxidation state of Ba in Co 4 Sb 12 resulted in a low electrical resistivity, ρ, value of the matrix. The enhancement of the Seebeck coefficient, S , and the electrical resistivity values of Ba 0.3 Co 4 Sb 12 with the addition of InSb can be credited to the energy-filtering effect of electrons with low energy at the interfaces. The power factor of the composites could not be enhanced compared to the matrix because of the very high ρ value. A minimum possible lattice thermal conductivity (0.45 W/m·K at 773 K) was achieved due to the combined effect of rattling of Ba atoms in the voids and enhanced phonon scattering at the interfaces induced by nanosized InSb particles. As a result, the (InSb) 0.15 + Ba 0.3 Co 4 Sb 12 composite exhibited improved thermoelectric properties with the highest zT of 1.4 at 773 K and improved mechanical properties with a higher hardness, higher Young's modulus, and lower brittleness.

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.