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The accurate prediction of electronic and optical properties in chalcopyrite semiconductors has been a persistent challenge for density functional theory (DFT) based approaches. Addressing this issue, we demonstrate that very accurate results can be obtained using a non-empirical screened dielectric-dependent hybrid (DDH) functional. This novel approach showcases its impressive capability to accurately determine band gaps, optical bowing parameters, and optical absorption spectra for chalcopyrite systems. What sets the screened DDH functional apart is its adeptness in capturing the many-body physics associated with highly localized $d$ electrons. Notably, the accuracy is comparable to the many-body perturbation based methods (such as $G_0W_0$ or its various approximations for band gaps and Bethe-Salpeter equation (BSE) on the top of the $G_0W_0$ or its various approximations for optical spectra) with less computational cost, ensuring a more accessible application across various research domains. The present results show the predictive power of the screened DDH functional, pointing toward promising applications where computational efficiency and predictive accuracy are crucial considerations. Overall, the screened DDH functional offers a compelling balance between cost-effectiveness and precision, making it a valuable tool for future endeavors in exploring chalcopyrite semiconductors and beyond., Comment: 15 pages, 11 figures

A simple effective screening parameter for screened range-separated hybrid is constructed from the compressibility sum rule in the context of linear-response time-dependent Density Functional Theory. When applied to the dielectric-dependent hybrid (DDH), it becomes remarkably accurate for bulk solids compared to those obtained from fitting with the model dielectric function or depending on the valence electron density of materials. The present construction of the screening parameter is simple and realistic. The screening parameter developed in this way is physically appealing and practically useful as it is straightforward to obtain using the average over the unit cell volume of the bulk solid, bypassing high-level calculations of the dielectric function depending on random-phase approximation. Furthermore, we have obtained a very good accuracy for energy band gaps, positions of the occupied d-bands, ionization potentials, optical properties of semiconductors and insulators, and geometries of bulk solids (equilibrium lattice constants and bulk moduli) from the constructed DDH., Comment: 13 pages

Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient approximation (GGA) significantly underestimate the bulk band gaps. This, in turn, results in inaccurate estimates of the band offsets at the heterointerfaces. In this paper, we investigate the performance of several advanced meta-GGA functionals in the computational prediction of band offsets at semiconductor heterojunctions. In particular, we investigate the performance of r2SCAN (revised strongly-constrained and appropriately-normed functional), rMGGAC (revised semilocal functional based on cuspless hydrogen model and Pauli kinetic energy density functional), mTASK (modified Aschebrock and K\"ummel meta-GGA functional), and LMBJ (local modified Becke-Johnson) exchange-correlation functionals. Our results strongly suggest that these meta-GGA functionals for supercell calculations perform quite well, especially, when compared to computationally more demanding GW calculations. We also present band offsets calculated using ionization potentials and electron affinities, as well as band alignment via the branch point energies. Overall, our study shows that the aforementioned meta-GGA functionals can be used within the DFT framework to estimate the band offsets in semiconductor heterostructures with predictive accuracy.

The relative energetic stability of the structural phases of common antiferromagnetic transition-metal oxides (MnO, FeO, CoO, and NiO) within the semilocal and hybrid density functionals are fraught with difficulties. In particular, MnO is known to be the most difficult case for almost all common semilocal and hybrid density approximations. Here, we show that the meta-generalized gradient approximation (meta-GGA) constructed from the cuspless hydrogen model and Pauli kinetic energy density (MGGAC) can lead to the correct ground state of MnO. The relative energy differences of zinc-blende (zb) and rock-salt (rs) structures as computed using MGGAC are found to be in nice agreement with those obtained from high-level correlation methods like the random phase approximation or quantum Monte Carlo techniques. Besides, we have also applied the onsite hybrid functionals (closely related to DFT+U ) based on GGA and meta-GGA functionals, and it is shown that a relatively high amount of Hartree-Fock exchange is necessary to obtain the correct ground-state structure. Our present investigation suggests that the semilocal MGGAC and onsite hybrids, both being computationally cheap, as methods of choice for the calculation of the relative stability of antiferromagnetic transition-metal oxides having potential applications in solid-state physics and structural chemistry.

The correct treatment of d electrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect of d states is linked with the anion displacement parameter u, which in turn influences the bandgap of these systems. Semilocal exchange-correlation functionals which yield good structural properties of semiconductors and insulators often fail to predict reasonable u because of the underestimation of the bandgaps arising from the strong interplay between d electrons. In the present study, we show that the meta-generalized gradient approximation (meta-GGA) obtained from the cuspless hydrogen density (MGGAC) [Phys. Rev. B 100, 155140 (2019)] performs in an improved manner in apprehending the key features of the electronic properties of chalcopyrites, and its bandgaps are comparative to that obtained using state-of-art hybrid methods. Moreover, the present assessment also shows the importance of the Pauli kinetic energy enhancement factor, $\alpha=(\tau-\tau^W)/\tau^{unif}$ in describing the d electrons in chalcopyrites. The present study strongly suggests that the MGGAC functional within semilocal approximations can be a better and preferred choice to study the chalcopyrites and other solid-state systems due to its superior performance and significantly low computational cost., Comment: 12 pages, 8 figures