Search

We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected temperature dependent longitudinal resistance consistent with semi-metallic bismuth, however it surprisingly showed no hint of a magnetoresistance for magnetic fields between $\pm30$ T. Even though bismuth is a diamagnetic material which {\it a priori} does not break time-reversal symmetry (TRS), our analysis of the reconstructed conductivities points towards the AHE to be of the intrinsic type, which does not emanate from magnetic impurities. Finally, as pure bismuth has been shown numerically to host a Berry curvature at its surface which breaks inversion symmetry, we propose it as a possible explanation for the temperature independent AHE observed here.

The concept of fluidic viscosity is ubiquitous in our everyday life and for it to arise the fluidic medium must necessarily form a continuum where macroscopic properties can emerge. While a powerful concept for tangible liquids, hydrodynamic manifestation of collective flow in electronic systems such as two-dimensional electron gases (2DEGs) has only been shown recently to occur in graphene and GaAs/AlGaAs. Here, we present nonlocal electronic transport measurements in concentric annular rings formed in high-mobility GaAs/AlGaAs 2DEGs and the resulting data strongly suggest that viscous hydrodynamic flow can occur far away from the source-drain current region. Our conclusion of viscous electronic transport is further corroborated by simulations of the Navier-Stokes equations that are found to be in agreement with our measurements below 1K temperature. Most importantly, our work emphasizes the key role played by viscosity via electron-electron (e-e) interaction when hydrodynamic transport is restricted radially, and for which a priori should not have played a major role.

Bismuth, the heaviest of all group V elements with strong spin-orbit coupling, is famously known to exhibit many interesting transport properties, and effects such as Shubnikov-de Haas and de Haas-van Alphen were first revealed in its bulk form. However, the transport properties have not yet been fully explored experimentally in thin bismuth nor in its 2D limit. In this work, bismuth flakes with average thicknesses ranging from 29 to 69 nm were mechanically exfoliated by a micro-trench technique and were used to fabricate four-point devices. Due to mixing of components, Onsager's relations were used to extract the longitudinal ($R_{xx}$) and Hall ($R_{xy}$) resistances where the latter shows a Hall anomaly that is consistent with the Anomalous Hall Effect (AHE). Our work strongly suggests that that there could be a hidden mechanism for time-reversal symmetry breaking in pure bismuth thin films.

The 5/2 fractional quantum Hall effect in the second Landau level of extremely clean two-dimensional electron gases has attracted much attention due to its topological order predicted to host quasiparticles that obey non-Abelian quantum statistics and could serve as a basis for fault-tolerant quantum computations. While previous works have establish the Fermi liquid (FL) nature of its putative composite fermion (CF) normal phase, little is known regarding its thermodynamics properties and as a result its effective mass is entirely unknown. Here, we report on time-resolved specific heat measurements at filling factor 5/2, and we examine the ratio of specific heat to temperature as a function of temperature. Combining these specific heat data with existing longitudinal thermopower data measuring the entropy in the clean limit we find that, unless a phase transition/crossover gives rise to large specific heat anomaly, both datasets point towards a large effective mass in the FL phase of CFs at 5/2. We estimate the effective-to-bare mass ratio m*/me to be ranging from ~2 to 4, which is two to three times larger than previously measured values in the first Landau level.

We theoretically calculate the fundamental noise that is present in gaseous (dilute fluid) flow in channels in the classical and degenerate quantum regime, where the Fermi-Dirac and Bose- Einstein distribution must be considered. Results for both regimes are analogous to their electrical counterparts. The quantum noise is calculated for a two terminal system and is a complicated function of the thermal and shot noise with the thermal noise dominating when $2k_BT >> m\Delta P$ and vice versa. The cumulant generating function for mass flow, which generates all the higher order statistics related to our mass flow distribution, is also derived and is used to find an expression for the third cumulant of flow across a fluidic channel.

We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$ $cm^2/Vs)$ and with distinct electron density of $1.7$ and $3.6\times 10^{11}~cm^{-2}$. In both Corbino samples, a non-monotonic behavior is observed in the temperature dependence of the resistance below 1~$K$. Surprisingly, a sharp {\it decrease} in resistance is observed with {\it increasing} temperature in the sample with lower electron density, whereas an opposite behavior is observed in the sample with higher density. To investigate further, transport measurements were performed in large van der Pauw samples having identical heterostructures, and as expected they exhibit resistivity that is monotonic with temperature. Finally, we discuss the results in terms of various lengthscales leading to ballistic and hydrodynamic electronic transport, as well as a possible Gurzhi effect.

Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications., Comment: 10 pages, 5 figures, plus supporting information

We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive, in-plane, magnetoresistance to Pauli-blockade of hopping conduction induced by spin polarization. Our work shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer., Comment: 6 pages, 3 figures, and supplemental information

Charge density waves (CDW) in the second and third Landau levels (LL) are investigated by both non-linear electronic transport and noise. The use of a Corbino geometry ensures that only bulk properties are probed, with no contribution from edge states. Sliding transport of CDWs is revealed by narrow band noise in re-entrant quantum Hall states R2a and R2c of the second LL as well as in pinned CDWs of the third LL. Competition between various phases - stripe, pinned CDW or fractional quantum Hall liquid - in both LL are clearly revealed by combining noise data with maps of conductivity versus magnetic field and bias voltage., Comment: 7 pages, 10 figures

We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of various semiconductor systems. Performance comparable to that of the hydrate (CMN) is predicted.

Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_\phi$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_\phi$ was also investigated and above 1~K, it was found to decrease weaker than the $L_\phi \propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium

Specific heat has had an important role in the study of superfluidity and superconductivity, and could provide important information about the fractional quantum Hall effect as well. However, traditional measurements of the specific heat of a two-dimensional electron gas are difficult due to the large background contribution of the phonon bath, even at very low temperatures. Here, we report measurements of the specific heat per electron in the second Landau level by measuring the thermalization time between the electrons and phonons. We observe activated behaviour of the specific heat of the 5/2 and 7/3 fractional quantum Hall states, and extract the entropy by integrating over temperature. Our results are in excellent agreement with previous measurements of the entropy via longitudinal thermopower. Extending the technique to lower temperatures could lead to detection of the non-Abelian entropy predicted for bulk quasiparticles at 5/2 filling

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect. In this work, we demonstrate the room temperature operation of a dual gated black phosphorus transistor operating as a velocity modulated transistor, whereby modification of hole density distribution within a black phosphorus quantum well leads to a two-fold modulation of hole mobility. Simultaneous modulation of Schottky barrier resistance leads to a four-fold modulation of transcon- ductance at a fixed hole density. Our work explicitly demonstrates the critical role of charge density distribution upon charge carrier transport within 2D atomic crystals.

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.

For certain measurements, the Corbino geometry has a distinct advantage over the Hall and van der Pauw geometries, in that it provides a direct probe of the bulk 2DEG without complications due to edge effects. This may be important in enabling detection of the non-Abelian entropy of the 5/2 fractional quantum Hall state via bulk thermodynamic measurements. We report the successful fabrication and measurement of a Corbino-geometry sample in an ultra-high mobility GaAs heterostructure, with a focus on transport in the second and higher Landau levels. In particular, we report activation energy gaps of fractional quantum Hall states, with all edge effects ruled out, and extrapolate the conductivity prefactor from the Arrhenius fits. Our results show that activated transport in the second Landau level remains poorly understood. The development of this Corbino device opens the possibility to study the bulk of the 5/2 state using techniques not possible in other geometries.

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility., Comment: 5 pages, 3 figures

In one of the most celebrated examples of the theory of universal critical phenomena, the phase transition to the superfluid state of $^{4}$He belongs to the same three dimensional $\mathrm{O}(2)$ universality class as the onset of ferromagnetism in a lattice of classical spins with $XY$ symmetry. Below the transition, the superfluid density $\rho_s$ and superfluid velocity $v_s$ increase as power laws of temperature described by a universal critical exponent constrained to be equal by scale invariance. As the dimensionality is reduced towards one dimension (1D), it is expected that enhanced thermal and quantum fluctuations preclude long-range order, thereby inhibiting superfluidity. We have measured the flow rate of liquid helium and deduced its superfluid velocity in a capillary flow experiment occurring in single $30~$nm long nanopores with radii ranging down from 20~nm to 3~nm. As the pore size is reduced towards the 1D limit, we observe: {\it i)} a suppression of the pressure dependence of the superfluid velocity; {\it ii)} a temperature dependence of $v_{s}$ that surprisingly can be well-fitted by a powerlaw with a single exponent over a broad range of temperatures; and {\it iii)} decreasing critical velocities as a function of radius for channel sizes below $R \simeq 20$~nm, in stark contrast with what is observed in micron sized channels. We interpret these deviations from bulk behaviour as signaling the crossover to a quasi-1D state whereby the size of a critical topological defect is cut off by the channel radius.

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schr\"odinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP., Comment: 7 pages, 8 figures

Geometrical Berry phase is recognized as having profound implications for the properties of electronic systems. Over the last decade, Berry phase has been essential to our understanding of new materials, including graphene and topological insulators. The Berry phase can be accessed via its contribution to the phase mismatch in quantum oscillation experiments, where electrons accumulate a phase as they traverse closed cyclotron orbits in momentum space. The high-temperature cuprate superconductors are a class of materials where the Berry phase is thus far unknown despite the large body of existing quantum oscillations data. In this report we present a systematic Berry phase analysis of Shubnikov - de Haas measurements on the hole-doped cuprates YBa$_2$Cu$_3$O$_{y}$, YBa$_2$Cu$_4$O$_8$, HgBa$_2$CuO$_{4 + \delta}$, and the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$. For the hole-doped materials, a trivial Berry phase of 0 mod $2\pi$ is systematically observed whereas the electron-doped Nd$_{2-x}$Ce$_x$CuO$_4$ exhibits a significant non-zero Berry phase. These observations set constraints on the nature of the high-field normal state of the cuprates and points towards contrasting behaviour between hole-doped and electron-doped materials. We discuss this difference in light of recent developments related to charge density-wave and broken time-reversal symmetry states., Comment: new version with added supplementary information

We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed in three distinct devices at a temperature $T^* \sim 1.6$ K. This crossover in Coulomb drag behaviour is consistent with Tomonaga-Luttinger liquid models for the 1D-1D drag between quantum wires., Comment: 16 pages, 3 figures

The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2\Delta were observed, in agreement with BCS theory with 2\Delta(T=0) \equiv \Delta_0=275\mueV. Several additional transport resonances scaling linearly in energy were observed at high-bias above 2\Delta, up to E\simeq 15\Delta_0, consistent with McMillan-Rowell oscillations. The persistence of McMillan-Rowell oscillations at high-bias and under applied magnetic field were investigated.

We have performed quantum Monte Carlo simulations measuring the finite size and temperature superfluid response of helium-4 to the linear and rotational motion of the walls of a nanopore. Within the two-fluid model, the portion of the normal liquid dragged along with the boundaries is dependent on the type of motion and the resulting anisotropic superfluid density saturates far below unity at T=0.5 K. The origin of the saturation is uncovered by computing the spatial distribution of superfluidity, with only the core of the nanopore exhibiting any evidence of phase coherence. The superfluid core displays scaling behavior consistent with Luttinger liquid theory, thereby providing an experimental test for the emergence of a one dimensional quantum liquid., Comment: Added a figure and extended discussion

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}\lambda)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed., Comment: 4 pages, 4 figures + supplemental info

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear temperature dependence below 10 K and the exponential temperature dependence above 40 K agree with existing theory of electron-phonon scattering, a field induced resistivity saturation behaviour characterized by an almost complete suppression of the temperature dependence is observed from approximately 20 to 40 K, which is in sharp contrast to the phenomenology observed when the current is parallel to the field. Possible origins of this intriguing intermediate temperature phenomenon are discussed., Comment: 5 pages, 3 figures

The flow of liquid helium through a single nanohole with radius smaller than 25 nm was studied for the first time. Mass flow was induced by applying a pressure difference of up to 1.4 bar across a 50 nm thick Si3N4 membrane and was measured directly by means of mass spectrometry. In liquid He I, we experimentally show that the fluid is not clamped by the short pipe with diameter-to-length ratio D/L~1, despite the small diameter of the nanohole. This viscous flow is quantitatively understood by making use of a model of flow in short pipes. In liquid He II, a two-fluid model for mass flow is used to extract the superfluid velocity in the nanohole for different pressure heads at temperatures close to the superfluid transition. These velocities compare well to existing data for the critical superflow of liquid helium in other confined systems., Comment: To appear in Physical Review Letters

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the insulating phase at higher field shows a large negative temperature dependence at resistances much smaller than the quantum of resistance, $h/e^2$. We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the 2DEG and the in-plane magnetic field., Comment: 4 pages, 2 figures

Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier $\gtrsim$ 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by $\sim$ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%., Comment: 4 pages, 4 figures

Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant tip/cantilever structure, we can extract electrostatic potential information of the 2DEG from the dynamics of the oscillator. We present measurements using a quartz tuning fork oscillator and a 2DEG with a cleaved edge overgrowth structure. The sensitivity of the quartz tuning fork as force sensor is demonstrated by observation of Shubnikov de Haas oscillations at a large tip-2DEG separation distance of more than 500 nm.

We consider the issue of the appropriate underlying wavefunction describing the enigmatic 5/2 fractional quantum Hall effect (FQHE), the only even denominator FQHE unambiguously observed in a single layer two dimensional (2D) electron system. Using experimental transport data and theoretical analysis, we argue that the possibility of the experimental 5/2 FQH state being not fully spin-polarized cannot be ruled out. We also establish that the parallel field-induced destruction of the 5/2 FQHE arises primarily from the enhancement of effective disorder by the parallel field with the Zeeman energy playing an important quantitative role., Comment: 4 pages, 2 figures

We show in this Letter that the ground state degeneracy associated with the presence of non-Abelian anyons can be probed by using an adiabatic cooling process based on the non-Abelian entropy. In particular, we show that when the number of such anyons is increased adiabatically at sufficiently low temperatures, the non-Abelian liquid undergoes cooling, whereas heating occurs in the Abelian case. Estimates are provided for the cooling power produced by the non-Abelian anyon refrigerator, and its implementation in non-Abelian fractional quantum Hall liquids is discussed.

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ~300 from 0 to 45T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree-of-freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures., Comment: 4 pages, 3 figures, modified version as accepted in APL

When a strong magnetic field is applied perpendicularly (along z) to a sheet confining electrons to two dimensions (x-y), highly correlated states emerge as a result of the interplay between electron-electron interactions, confinement and disorder. These so-called fractional quantum Hall (FQH) liquids form a series of states which ultimately give way to a periodic electron solid that crystallizes at high magnetic fields. This quantum phase of electrons has been identified previously as a disorder-pinned two-dimensional Wigner crystal with broken translational symmetry in the x-y plane. Here, we report our discovery of a new insulating quantum phase of electrons when a very high magnetic field, up to 45T, is applied in a geometry parallel (y-direction) to the two-dimensional electron sheet. Our data point towards this new quantum phase being an electron solid in a "quasi-3D" configuration induced by orbital coupling with the parallel field.

The mass flow conductance of single nanoholes with diameter ranging from 75 to 100 nm was measured using mass spectrometry. For all nanoholes, a smooth crossover is observed between single-particle statistical flow (effusion) and the collective viscous flow emanating from the formation of a continuum. This crossover is shown to occur when the gas mean free path matches the size of the nanohole diameter. As a consequence of the pinhole geometry, the breakdown of the Poiseuille approximation is observed in the power-law temperature exponent of the measured conductance.

Electrically detected nuclear magnetic resonance was studied in detail in a two-dimensional electron gas as a function of current bias and temperature. We show that applying a relatively modest dc-current bias, I_dc ~ 0.5 microAmps, can induce a re-entrant and even enhanced nuclear spin signal compared with the signal obtained under similar thermal equilibrium conditions at zero current bias. Our observations suggest that dynamic nuclear spin polarization by small current flow is possible in a two-dimensional electron gas, allowing for easy manipulation of the nuclear spin by simple switching of a dc current., Comment: 5 pages, 3 figs

Using a tilted field geometry, the effect of an in-plane magnetic field on the even denominator nu = 5/2 fractional quantum Hall state is studied. The energy gap of the nu = 5/2 state is found to collapse linearly with the in-plane magnetic field above ~0.5 T. In contrast, a strong enhancement of the gap is observed for the nu = 7/3 state. The radically distinct tilted-field behaviour between the two states is discussed in terms of Zeeman and magneto-orbital coupling within the context of the proposed Moore-Read pfaffian wavefunction for the 5/2 fractional quantum Hall effect.

We consider theoretically the possibility of observing unusual quantum fluid behavior in liquid $^{3}$He and solutions of $^{3}$He in $^{4}$He systems confined to nano-channels. In the case of pure ballistic flow at very low temperature conductance will be quantized in units of $2m^{2}/h$. We show that these steps should be sensitive to increases in temperature. We also use of a random scattering matrix simulation to study flow with diffusive wall scattering. Universal conductance fluctuations analogous to those seen in electron systems should then be observable. Finally we consider the possibility of the cross-over to a one-dimensional system at sufficiently low temperature where the system could form a Luttinger liquid.

The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous measurements performed on samples with similar mobility, but with electronic density larger by a factor of two. The role of disorder on the nu=5/2 gap is examined. Comparison between experiment and theory indicates that a large discrepancy remains for the intrinsic gap extrapolated from the infinite mobility (zero disorder) limit. In contrast, no such large discrepancy is found for the nu=1/3 Laughlin state. The observation of the nu=5/2 state in the low-field regime implies that inclusion of non-perturbative Landau level mixing may be necessary to better understand the energetics of half-filled fractional quantum hall liquids., Comment: 5 pages, 4 figures; typo corrected, comment expanded

A study of the resistively detected nuclear magnetic resonance (RDNMR) lineshape in the vicinity of $\nu=1$ was performed on a high-mobility 2D electron gas formed in GaAs/AlGaAs. In higher Landau levels, application of an RF field at the nuclear magnetic resonance frequency coincides with an observed minimum in the longitudinal resistance, as predicted by the simple hyperfine interaction picture. Near $\nu=1$ however, an anomalous dispersive lineshape is observed where a resistance peak follows the usual minimum. In an effort to understand the origin of this anomalous peak we have studied the resonance under various RF and sample conditions. Interestingly, we show that the lineshape can be completely inverted by simply applying a DC current. We interpret this as evidence that the minima and maxima in the lineshape originate from two distinct mechanisms., Comment: 5 pages, 3 figures, EP2DS 17, to be published in Physica E

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e. a Skyrmion crystal.

The specific heat of superfluid $^{3}$He, disordered by a silica aerogel, is found to have a sharp discontinuity marking the thermodynamic transition to superfluidity at a temperature reduced from that of bulk $^{3}$He. The magnitude of the discontinuity is also suppressed. This disorder effect can be understood from the Ginzburg-Landau theory which takes into account elastic quasiparticle scattering suppressing both the transition temperature and the amplitude of the order parameter. We infer that the limiting temperature dependence of the specific heat is linear at low temperatures in the disordered superfluid state, consistent with predictions of gapless excitations everywhere on the Fermi surface., Comment: accpeted for publication in Physical Review Letters

Magnetotransport measurements were performed in a ultra-high mobility GaAs/AlGaAs quantum well of density $\sim 3.0 \times 10^{11}$ $cm^{-2}$. The temperature dependence of the magnetoresistance $R_{xx}$ was studied in detail in the vicinity of $\nu={9/2}$. In particular, we discovered new minima in $R_{xx}$ at filling factor $\nu\simeq 4{1/5}$ and $4{4/5}$, but only at intermediate temperatures $80\lesssim T\lesssim 120$ mK. We interpret these as evidence for a fractional quantum Hall liquid forming in the N=2 Landau level and competing with bubble and Wigner crystal phases favored at lower temperatures. Our data suggest that a magnetically driven insulator-insulator quantum phase transition occurs between the bubble and Wigner crystal phases at T=0., Comment: Phys. Rev. Lett.93 266804 (2004)

The phase diagram of the superfluid phases of $^{3}$He in 98% aerogel was determined in the range of pressure from 15 to 33 bars and for fields up to 3 kG using high-frequency sound. The superfluid transition in aerogel at 33.4 bars is field independent from 0 to 5 kG and shows no evidence of an $A_{1}-A_{2}$ splitting. The first-order transition between the A and B-phases is suppressed by a magnetic field, and exhibits strong supercooling at high pressures. We show that the equilibrium phase in zero applied field is the B-phase with at most a region of A-phase {\small $\alt$} 20 $\mu$K just below T${_c}$ at a pressure of 33.4 bars. This is in contrast to pure $^{3}$He which has a large stable region of A-phase and a polycritical point. The quadratic coefficient for magnetic field suppression of the AB-transition, $g_{a}(\beta)$, was obtained. The pressure dependence of $g_{a}(\beta)$ is markedly different from that for the pure superfluid, $g_{0}(\beta)$, which diverges at a polycritical pressure of 21 bars. We compare our results with calculations from the homogeneous scattering model for $g_{a}(\beta)$, defined in a Ginzburg-Landau theory in terms of strong-coupling parameters $\beta$. We find qualitatively good agreement with the experiment if the strong-coupling corrections are rescaled from known values of the $\beta$'s for pure $^{3}$He, reduced by the suppression of the superfluid transition temperature. The calculations indicate that the polycritical pressure in the aerogel system is displaced well above the melting pressure and out of experimental reach. We cannot account for the puzzling supercooling of the aerogel AB-transition in zero applied field within the framework of known nucleation scenarios., Comment: 10 pages, 8 figures

The nucleation of the first order phase transition of superfluid 3He-B from superfluid 3He-A is quite remarkable since it requires a seed of the order of a micron. We have studied this nucleation for 3He confined to a very dilute silica aerogel. This dirty superfluid behaves in a manner similar to previous reports for the pure superfluid. But we have discovered a novel magnetically driven nucleation switch acting on the pure superfluid B-phase. Lastly, we find the surprising result that the proximity effect between the pure and dirty superfluids at their interface is insufficient to nucleate the B-phase in either superfluid., Comment: 4 pages, 4 figures, to be published in Physical Review Letters