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Alternative polyadenylation (APA) has been widely recognized as a crucial step during the post-transcriptional regulation of eukaryotic genes. Recent studies have demonstrated that APA exerts key regulatory roles in many biological processes and often occurs in a tissue- and cell-type-specific manner. However, to our knowledge, there is no database incorporating information about APA at the cell-type level. Single-cell RNA-seq is a rapidly evolving and powerful tool that enable APA analysis at the cell-type level. Here, we present a comprehensive resource, scAPAatlas (http://www.bioailab.com:3838/scAPAatlas), for exploring APA across different cell types, and interpreting potential biological functions. Based on the curated scRNA-seq data from 24 human and 25 mouse normal tissues, we systematically identified cell-type-specific APA events for different cell types and examined the correlations between APA and gene expression level. We also estimated the crosstalk between cell-type-specific APA events and microRNAs or RNA-binding proteins. A user-friendly web interface has been constructed to support browsing, searching and visualizing multi-layer information of cell-type-specific APA events. Overall, scAPAatlas, incorporating a rich resource for exploration of APA at the cell-type level, will greatly help researchers chart cell type with APA and elucidate the biological functions of APA.

Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with...

Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with optical cavities are emerging as a promising platform for studying strong light-matter interactions as a route to explore a variety of exotic many-body effects. Here, in few-layered WS

We study exciton–plasmon coupling in two-dimensional semiconductors coupled with Ag plasmonic lattices via angle-resolved reflectance spectroscopy and by solving the equations of motion (EOM) in a coupled oscillator model accounting for all the resonances of the system. Five resonances are considered in the EOM model: semiconductor A and B excitons, localized surface plasmon resonances (LSPRs) of plasmonic nanostructures, and the lattice diffraction modes of the plasmonic array. We investigated the exciton–plasmon coupling in different 2D semiconductors and plasmonic lattice geometries, including monolayer MoS2 and WS2 coupled with Ag nanodisk and bowtie arrays and examined the dispersion and line shape evolution in the coupled systems via the EOM model with different exciton–plasmon coupling parameters. The EOM approach provides a unified description of the exciton–plasmon interaction in the weak, intermediate, and strong coupling cases with correctly explaining the dispersion and lineshapes of the compl...

Weyl semimetals (WSMs) are gapless topological states of matter with broken inversion and/or time reversal symmetry. WSMs can support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. Here, we report a spatially dispersive circular photogalvanic effect (s-CPGE) in a WSM that occurs with a spatially varying beam profile. Our analysis shows that the s-CPGE is controlled by a symmetry selection rule combined with asymmetric carrier excitation and relaxation dynamics. By evaluating the s-CPGE for a minimal model of a WSM, a frequency-dependent scaling behaviour of the photocurrent is obtained. Wavelength-dependent measurements from the visible to mid-infrared range show evidence of Berry curvature singularities and band inversion in the s-CPGE response. We present the s-CPGE as a promising spectroscopic probe for topological band properties, with the potential for controlling photoresponse by patterning optical fields on topological materials to store, manipulate and transmit information. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version RA acknowledges the support from the Office of Naval Research MURI (grant #N00014-17-1-2661) and the US Army Research Office (grant # W911NF-17-1-0436). Work by EJM and ZA was supported by the Department of Energy (grant# DE FG02 84ER45118). The crystal growth effort (PY and ZL) was supported by the Singapore National Research Foundation under NRF RF Award No. NRF-RF2013-08 and Tier 2 MOE2016-T2-2-153. RA, EJM, CLK and AMR acknowledge the support from the Center of Excellence for Materials Research and Innovation Seed Grant and the MRSEC iSuperSEED Supplement.

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage., Polar metals such as GeTe could store information using electric domains but the high conductivity screens electric fields, preventing the use of usual domain control techniques. Here, the authors demonstrate that polar domains in GeTe can be manipulated using electrically generated heat shocks.

Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude suppression of electronic cooling compared with clean graphene. The effect is stronger in graphene with more vacancies, confirming its vacancy-induced nature. The dependence of the coupling constant on the phonon temperature implies its link to the dynamics of disorder. Our study highlights the effect of disorder on electron-phonon interaction in graphene. In addition, the suppression of electronic cooling holds great promise for improving the performance of graphene-based bolometer and photo-detector devices., Comment: 13 pages, 4 figures

A bolometer is a device that makes an electrical resistive response to the electromagnetic radiation resulted from a raise of temperature due to heating. The combination of the extremely weak electron-phonon interactions along with its small electron heat capacity makes graphene an ideal material for applications in ultra-fast and sensitive hot electron bolometer. However, a major issue is that the resistance of pristine graphene weakly depends on the electronic temperature. We propose using disordered graphene to obtain a strongly temperature dependent resistance. The measured electrical responsivity of the disordered graphene bolometer reaches 6 × 106 V/W at 1.5 K, corresponding to an optical responsivity of 1.6 × 105 V/W. The deduced electrical noise equivalent power is 1.2 "Equation missing", corresponding to the optical noise equivalent power of 44 "Equation missing". The minimal device structure and no requirement for high mobility graphene make a step forward towards the applications of graphene hot electron bolometers.