Search

In light optics, beams with orbital angular momentum (OAM) can be produced by employing a properly-tuned two-cylinder-lens arrangement, also called $\pi$/2 mode converter. It is not possible to convey this concept directly to the beam in an electron microscope due to the non-existence of cylinder lenses in commercial transmission electron microscope (TEM). A viable work-around are readily-available electron optical elements in the form of quadrupole lenses. In a proof-of-principle experiment in 2012, it has been shown that a single quadrupole in combination with a Hilbert phase plate produces a spatially-confined, transient vortex mode. Here, an analogue to an optical $\pi$/2 mode converter is realized by repurposing a CEOS DCOR probe corrector in an aberration corrected TEM in a way that it resembles a dual cylinder lens using two quadrupoles. In order to verify the presence of OAM in the output beam, a fork dislocation grating is used as an OAM analyser. The possibility to use magnetic quadrupole fields instead of, e.g., prefabricated fork dislocation gratings to produce electron beams carrying OAM enhances the beam brightness by almost an order of magnitude and delivers switchable high-mode purity vortex beams without unwanted side-bands.

We report a combined inelastic neutron and X-ray scattering study of the phonon density of states of the nano- and microcrystalline lanthanide-based materials NaY$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$ and NaGd$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$. While large (20 nm) nanocrystals display the same vibrational spectra as their microcrystalline counterparts, we find an enhanced phonon density of states at low energies, $E \leq 15\,\rm{meV}$, in ultra-small (5 nm) NaGd$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$ nanocrystals which we assign to an increased relative spectral weight of surface phonon modes. Based on our observations for ultra-small nanocrystals, we rationalize that an increase of the phonon density of states in large nanocrystals due to surface phonons is too small to be observed in the current measurements. The experimental approach described in this report constitutes the first step toward the rationalization of size effects on the modification of the absolute upconversion quantum yield of upconverting nanocrystals.

The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the electrical properties of $AlO_x$ layers. This study aims to close this gap by applying transmission electron microscopy in combination with electron energy loss spectroscopy to analyze the structural and nanochemical properties of differently fabricated $AlO_x$ layers and correlate them with fabrication parameters. With respect to the application of $AlO_x$ as tunnel barrier in superconducting Josephson junctions, $Al/AlO_x/Al$-layer systems were deposited on Si substrates. We will show that the oxygen content and structure of amorphous $AlO_x$ layers is strongly dependent on the fabrication process and oxidation parameters. Dynamic and static oxidation of Al yields oxygen-deficient amorphous $AlO_x$ layers, where the oxygen content ranges from x = 0.5 to x = 1.3 depending on oxygen pressure and substrate temperature. Thicker layers of stoichiometric crystalline $\gamma-Al_2O_3$ layers were grown by electron-beam evaporation of $Al_2O_3$ and reactive sputter deposition.

$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of $Al/AlO_x/Al$-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the $AlO_x$-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the $Al/AlO_x/Al$-layer systems to determine the thickness homogeneity of the $AlO_x$ layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the $Al/AlO_x$ interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole $Al/AlO_x/Al$-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 $\mu m$ and large lateral grain sizes up to 1 $\mu m$. Thickness fluctuations of the $AlO_x$-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms.

This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlO$_{x}$-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are derived towards the fabrication of Al/AlO$_{x}$/Al-layers systems with improved properties., Comment: 28 pages, 4 figures

Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be the main sources for electronic anisotropy. Anisotropic defect scattering likewise alters magnetoresistance at low temperature remarkably and influences spin-orbit coupling significantly by the Elliot Yafet mechanism of spin relaxation resulting in anisotropic weak localization. Applying a magnetic field parallel to the interface results in an additional field induced anisotropy of the conductance, which can be attributed to Rashba spin orbit interaction. Compared to LaAlO3 SrTiO3, Rashba coupling seems to be reduced indicating a weaker polarity in Al2O3 SrTiO3 heterostructures.

Thin-film based phase plates are meanwhile a widespread tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration under the intense electron-beam illumination. Recent investigations have focused on the search for alternative materials with an improved material stability. This work presents thin-film based phase plates fabricated from metallic glass alloys, which are characterized by a high electrical conductivity and an amorphous structure. Thin films of the zirconium-based alloy Zr65.0Al7.5Cu27.5 (ZAC) are prepared and their phase-shifting properties are tested. The ZAC-alloy film is investigated by different TEM techniques, which reveal a range of beneficial characteristics. Particularly favorable is the small probability for inelastic plasmon scattering, which is promising to improve the performance of thin-film based phase plates in phase-contrast TEM.

A method is described for the reconstruction of the amplitude and phase of the object exit wave function by phase-plate transmission electron microscopy. The proposed method can be considered as in-line holography and requires three images, taken with different phase shifts between undiffracted and diffracted electrons induced by a suitable phase-shifting device. The proposed method is applicable for arbitrary object exit wave functions and non-linear image formation. Verification of the method is performed for examples of a simulated crystalline object wave function and a wave function acquired with off-axis holography. The impact of noise on the reconstruction of the wave function is investigated.

In this theoretical study we analyze contrast transfer of weak-phase objects in a transmission electron microscope, which is equipped with an aberration corrector (Cs-corrector) in the imaging lens system and a physical phase plate in the back focal plane of the objective lens. For a phase shift of pi/2 between scattered and unscattered electrons induced by a physical phase plate, the sine-type phase contrast transfer function is converted into a cosine-type function. Optimal imaging conditions could theoretically be achieved if the phase shifts caused by the objective lens defocus and lens aberrations would be equal zero. In reality this situation is difficult to realize because of residual aberrations and varying, non-zero local defocus values, which in general result from an uneven sample surface topography. We explore the conditions - i.e. range of Cs-values and defocus - for most favourable contrast transfer as a function of the information limit, which is only limited by the effect of partial coherence of the electron wave in Cs-corrected transmission electron microscopes. Under high-resolution operation conditions we find that a physical phase plate improves strongly low- and medium-resolution object contrast, while improving tolerance to defocus and Cs-variations, compared to a microscope without a phase plate.

Single atoms can be considered as basic objects for electron microscopy to test the microscope performance and basic concepts for modeling of image contrast. In this work high-resolution transmission electron microscopy was applied to image single platinum atoms in an aberration-corrected transmission electron microscope. The atoms are deposited on a self-assembled monolayer substrate which induces only negligible contrast. Single-atom contrast simulations were performed on the basis of Weickenmeier-Kohl and Doyle-Turner scattering factors. Experimental and simulated intensities are in full agreement on an absolute scale.

Epitaxially strained LaCoO3 (LCO) thin films were grown with different film thickness, t, on (001) oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. After initial pseudomorphic growth the films start to relieve their strain partly by the formation of periodic nano-twins with twin planes predominantly along the <100> direction. Nano-twinning occurs already at the initial stage of growth, albeit in a more moderate way. Pseudomorphic grains, on the other hand, still grow up to a thickness of at least several tenths of nanometers. The twinning is attributed to the symmetry lowering of the epitaxially strained pseudo-tetragonal structure towards the relaxed rhombohedral structure of bulk LCO. However, the unit-cell volume of the pseudo-tetragonal structure is found to be nearly constant over a very large range of t. Only films with t > 130 nm show a significant relaxation of the lattice parameters towards values comparable to those of bulk LCO., Comment: 31 pages, 10 figures

Electron holography in a transmission electron microscope was applied to measure the phase shift induced by Au clusters as a function of the cluster size. Large phase shifts Df observed for small Au clusters cannot be described by the well-known equation Df=C_E V_0 t (C_E: interaction constant, V_0: mean inner Coulomb potential (MIP) of bulk gold, t: cluster thickness). The rapid increase of the Au MIP with decreasing cluster size derived from Df, can be explained by the compressive strain of surface atoms in the cluster.

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and three-dimensional growth mode. In-concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can be well described applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557]. Calculated photoluminescence peak positions on the basis of the measured concentration profiles are in good agreement with the experimental ones. Evaluating experimental In-concentration profiles it is found that the transition from the two-dimensional to the three-dimensional growth mode occurs if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers. The measured exponential decrease of the In-concentration within the cap layer on top of the islands reveals that the In-floating layer is not consumed during island formation. The segregation efficiency above the islands is increased compared to the quantum wells which is explained tentatively by strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As quantum wells were grown at different temperatures between 500 oC and 550 oC. The evaluation of concentration profiles shows that the segregation efficiency increases from R=0.65 to R=0.83., Comment: 16 pages, 6 figures, 1 table, sbmitted in Phys. Rev. B

Needle-shaped atom probe specimens containing a single grain boundary were produced using the focused ion beam (FIB) of a dual-beam FIB/SEM (scanning electron microscope) system. The presented specimen preparation approach allows the unprecedented study of a grain boundary which is well characterised in its crystallographic orientation by means of the field ion microscope (FIM) and the tomographic atom probe (TAP). The analysis of such specimens allows in particular the determination of solute excess atoms at this specific grain boundary and hence the investigation of the segregation behaviour. The crucial preparation steps are discussed in detail in the present study for the S 19a {331} <110> grain boundary of a 40 at.ppm-Bi doped Cu bi-crystal. Transmission electron microscope (TEM) images and TAP analyses of the atom probe tips demonstrate unambiguously the presence of the selectively prepared grain boundary in the apex region of some of the specimens., Comment: 21 pages, 6 figures