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304 results on '"Gerardin, S."'

1. RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC

Author

Loddo, F., Andreazza, A., Arteche, F., Barbero, M.B., Barillon, P., Beccherle, R., Bilei, G.M., Bjalas, W., Bonaldo, S., Bortoletto, D., Calderini, G., Caratelli, A., Christian, D.C., Christiansen, J., Conti, E., Crescioli, F., Daas, M., De Robertis, G., Demaria, N., Deptuch, G.C., Dieter, Y., Dimitrievska, A., Ding, L., Esposito, S., Exarchou, D., Fahim, F., Fioriti, A., Fougeron, D., Gaioni, L., Garcia-Sciveres, M., Gerardin, S., Gnani, D., Grippo, M., Gromov, V., Hamer, M., Havranek, M., Heim, T., Hemperek, T., Hinterkeuser, F., Hoff, J., Huiberts, S., Janssen, J., Jara Casas, L.M., Jirsa, J., John, J.J., Kampkotter, J., Karagounis, M., Khwaira, Y., Kluit, R., Krieger, A., Krueger, H., Lalic, J., Lauritzen, M., Licciulli, F., Lipton, R., Liu, T., Lopez Morillo, E., Lounis, A., Luongo, F., Magazzu, G., Marcisovsky, M., Marconi, S., Marquez Lasso, F., Marzocca, C., Mattiazzo, S., Menouni, M., Minuti, M., Mironova, M., Miryala, S., Monteil, E., Moustakas, K., Muõz Chavero, F., Neue, G., Orfanelli, S., Paccagnella, A., Pacher, L., Palla, F., Palomo Pinto, F.R., Papadopoulou, A., Paterno, A., Petri, A., Placidi, P., Pohl, D., Pradas, A., Prydderch, M.L., Pulli, A., Ratti, L., Re, V., Rehman, A., Rymaszewski, P., Solal, M.C., Standke, M., Stiller, A., Strebler, T., Stugu, B., Thomas, S., Traversi, G., Vogrig, D., Vogt, M., Wang, T., Yang, H., Zdenko, J., and Zimmerman, T.

Published
2024
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2. Nuclear physics midterm plan at Legnaro National Laboratories (LNL)

Author

Ballan, M., Bottoni, S., Caamaño, M., Caciolli, A., Campostrini, M., Cicerchia, M., Crespi, F. C. L., Cristallo, S., Dell’Aquila, D., Depalo, R., Fioretto, E., Galtarossa, F., Gasques, L. R., Gottardo, A., Gramegna, F., Gulminelli, F., Kurtukian-Nieto, T., La Cognata, M., Lenzi, S. M., Marchi, T., Mazurek, K., Mengoni, D., Mou, L., Nania, R., Pupillo, G., Valiente-Dobón, J. J., Zanon, I., Acosta, L., Alvarez, M. A. G., Andrighetto, A., Arazi, A., Arzenton, A., Assié, M., Bagatin, M., Barbaro, F., Barbieri, C., Barlini, S., Basiricò, L., Battistoni, G., Beaumel, D., Bentley, M. A., Benzoni, G., Bertoldo, S., Bertulani, C., Bonasera, A., Camaiani, A., Canton, L., Capirossi, V., Carante, M. P., Carraro, C., Carturan, S. M., Casini, G., Cavanna, F., Centofante, L., Chávez, E. R., Chbihi, A., Ciemała, M., Cisternino, S., Colombi, A., Colucci, M., Compagnucci, A., Corradetti, S., Corradi, L., D’Agata, G., de Angelis, G., De Dominicis, L., De Salvador, D., DeFilippo, E., Del Fabbro, M., Di Nitto, A., Ditalia Tchernij, S., Donzella, A., Duguet, T., Esposito, J., Favela, F., Fernández-García, J. P., Flavigny, F., Fontana, A., Fornal, B., Forneris, J., Fraboni, B., Frankland, J., Gamba, E., Geraci, E., Gerardin, S., Giuliani, S. A., Gnoffo, B., Groppi, F., Gruyer, D., Haddad, F., Isaak, J., Kmiecik, M., Koning, A., Lamia, L., Le Neindre, N., Leoni, S., Lépine-Szily, A., Lilli, G., Lombardo, I., Loriggiola, M., Loriggiola, L., Lunardon, M., Maggioni, G., Maj, A., Manenti, S., Manzolaro, M., Marcucci, L. E., Marín-Lámbarri, D. J., Mariotti, E., Martin Hernandez, G., Massimi, C., Mastinu, P., Mazzocco, M., Mazzolari, A., Mijatović, T., Mishenina, T., Mizuyama, K., Monetti, A., Montagnoli, G., Morselli, L., Moschini, L., Musacchio Gonzalez, E., Nannini, A., Niu, Y. F., Ota, S., Paccagnella, A., Palmerini, S., Pellegri, L., Perego, A., Piantelli, S., Piatti, D., Picollo, F., Pignatari, M., Pinna, F., Pirrone, S., Pizzone, R. G., Polettini, M., Politi, G., Popescu, L., Prete, G., Quaranta, A., Raabe, R., Ramos, J. P., Raniero, W., Rapisarda, G. G., Recchia, F., Rigato, V., Roca Maza, X., Rocchini, M., Rodriguez, T., Roncolato, C., Rudolph, D., Russotto, P., Sánchez-Benítez, Á. M., Savran, D., Scarpa, D., Scheck, M., Sekizawa, K., Sergi, M. L., Sgarbossa, F., Silvestrin, L., Singh Khwairakpam, O., Skowronski, J., Somà, V., Spartà, R., Spieker, M., Stefanini, A. M., Steiger, H., Stevanato, L., Stock, M. R., Vardaci, E., Verney, D., Vescovi, D., Vittone, E., Werner, V., Wheldon, C., Wieland, O., Wimmer, K., Wyss, J., Zago, L., and Zenoni, A.

Published
2023
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5. DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments

Author

Bonaldo, S, Ma, T, Mattiazzo, S, Baschirotto, A, Enz, C, Fleetwood, D, Paccagnella, A, Gerardin, S, Bonaldo S., Ma T., Mattiazzo S., Baschirotto A., Enz C., Fleetwood D. M., Paccagnella A., Gerardin S., Bonaldo, S, Ma, T, Mattiazzo, S, Baschirotto, A, Enz, C, Fleetwood, D, Paccagnella, A, Gerardin, S, Bonaldo S., Ma T., Mattiazzo S., Baschirotto A., Enz C., Fleetwood D. M., Paccagnella A., and Gerardin S.

Abstract

Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at doses up to 1 Grad(SiO2) for applications in high-energy physics experiments. The TID effects are evaluated through DC and low-frequency noise measurements by varying irradiation bias conditions, transistor channel lengths, and fin/finger layouts. The TID response of nFinFETs irradiated under positive gate bias at ultrahigh doses shows a rebound of threshold voltage with significant increase in the 1/f noise amplitude. The degradation is related to the generation of border and interface traps at the upper corners of STI oxides and at the gate oxide/channel interfaces. In contrast, pFinFETs have the worst degradation due to positive charge trapping in STI oxides, which severely degrades the device transconductance and total drain current, while negligible effects are visible in the threshold voltage and 1/f noise. The TID sensitivity depends strongly on the transistor layout. Short-channel devices have the best TID tolerance thanks to the influence of halo implantations, while pFinFETs designed with low number of fins have the worst degradation because of high densities of positive charge in the surrounding thick STI oxides. As a guideline for IC design, short-channel transistors with more than 4-fins may be preferred in order to facilitate circuit qualification.

Published
2022

6. Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Author

Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., Gerardin S., Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., and Gerardin S.

Abstract

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO2) and then annealed for 24 h at 100 °C. The TID responses of nFinFETs are insensitive to the fin number, as dominated by border and interface trap generation in shallow trench isolation (STI) and/or gate oxide. However, pFinFETs show a visible fin-number dependence with worst tolerance of transistors with the smallest number of fins. The fin number dependence may be related to a larger charge trapping in STI located at the opposite lateral sides of the first and last fins. In addition, both n- and p-FinFETs exhibit an almost TID insensitivity to the finger number. During the design of integrated circuits, the TID tolerance of electronic systems can be enhanced by preferably using transistors with a higher number of fins than fingers.

Published
2022

7. Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Author

Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., Gerardin S., Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., and Gerardin S.

Abstract

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC static characteristic measurements show that below 100 Mrad(SiO2) the device variability is slightly affected by the total accumulated dose. However, when the total dose reaches 100 Mrad(SiO2), the device variability increases significantly showing a correlation with pre-irradiation electrical responses of the devices. Transistors characterized by higher drain current exhibit the worst TID degradation. This phenomenon is likely due to the impact of random dopant fluctuations on the TID effects and/or to variations in the hydrogen concentration responsible for the TID-induced interface traps.

Published
2022

9. Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells

Author

Gerardin, S., Bagatin, M., Paccagnella, A., Beltrami, S., Benvenuti, A., and Cazzaniga, C.

Abstract

The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous at the center of the pillar, mainly due to the impact of top-to-bottom tapering on the electrical characteristics of the floating gate (FG) cells and, to a smaller extent, to a different generation of neutron secondaries as a function of depth.

Published
2024
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10. Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Author

Bonaldo, S., Martinella, C., Race, S., Fur, N., Mattiazzo, S., Bagatin, M., Gerardin, S., Paccagnella, A., and Grossner, U.

Abstract

Total-ionizing dose (TID) and displacement damage (DD) are investigated in SiC power MOSFETs at ultrahigh doses with 10-keV X-ray and 3-MeV protons. Significant parametric shifts in the electrical responses of the devices are observed depending on the bias condition and on the fabrication technology. Worst TID degradation is measured when positive gate bias is applied during the irradiation, due to positive charge trapping in the gate oxide. Devices built in the latest generation SiC technology reveal a smaller subthreshold swing degradation, thanks to a better quality of the SiC/SiO2 interface. Devices exposed to 3-MeV protons exhibit a complex combination of TID and DD effects. The $I-V$ and capacitance–voltage ( $C-V$ ) measurements in SiC power MOSFETs identify two main degradation mechanisms: 1) TID-induced charge trapping in the gate oxide and SiC/SiO2 interface and 2) DD-induced lattice damage in the SiC drift region, which degrades the series resistance of the devices.

Published
2024
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16. TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Author

Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., Gerardin S., Ma, T, Bonaldo, S, Mattiazzo, S, Baschirotto, A, Enz, C, Paccagnella, A, Gerardin, S, Ma T., Bonaldo S., Mattiazzo S., Baschirotto A., Enz C., Paccagnella A., and Gerardin S.

Abstract

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 °C. Irradiated devices show significant degradation in transconductance and OFF-state leakage currents with slight subthreshold stretch-out and negligible threshold voltage shifts. At doses up to 10 Mrad(SiO2), the TID response is dominated by positive trapped charges in the shallow trench isolation (STI). At ultrahigh doses approaching 1 Grad(SiO2), dc static measurements suggest generation of trapped charge at the STI/Si interface and/or at the corner between the STI and the gate dielectric. The TID sensitivity depends on the bias condition and channel length. Halo implantations fortuitously increase the radiation tolerance of short-channel FinFETs due to the increased channel doping caused by the overlap of the source and the drain halos. The worst degradation is found when a high electric field is applied to the gate during irradiation.

Published
2021

18. Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Author

Bonaldo, S, Mattiazzo, S, Enz, C, Baschirotto, A, Fleetwood, D, Paccagnella, A, Gerardin, S, Bonaldo S., Mattiazzo S., Enz C., Baschirotto A., Fleetwood D. M., Paccagnella A., Gerardin S., Bonaldo, S, Mattiazzo, S, Enz, C, Baschirotto, A, Fleetwood, D, Paccagnella, A, Gerardin, S, Bonaldo S., Mattiazzo S., Enz C., Baschirotto A., Fleetwood D. M., Paccagnella A., and Gerardin S.

Abstract

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel length, the channel width, and the bias condition. Halo implantations improve the radiation tolerance of shorter-channel transistors. Worst case bias for TID-induced degradation is found with high electric field applied to the gate during irradiation, due to increased charge trapping in the upper corner of the shallow trench isolation (STI) and in the gate oxide. DC and low-frequency noise measurements show that, at doses up to 100 Mrad(SiO2), radiation-induced degradation is primarily due to the positive charge buildup in the STI oxides. At ultrahigh doses approaching 1 Grad(SiO2), TID degradation is influenced by charge buildup in the gate oxide and traps at or near the gate/dielectric interface and/or along the STI sidewalls. Worst case degradation is found in narrower and longer-channel devices, due to the enhanced charge buildup in the STI oxide and along its interfaces.

Published
2020

21. Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Author

Bonaldo, S, Mattiazzo, S, Enz, C, Baschirotto, A, Paccagnella, A, Jin, X, Gerardin, S, Bonaldo S., Mattiazzo S., Enz C., Baschirotto A., Paccagnella A., Jin X., Gerardin S., Bonaldo, S, Mattiazzo, S, Enz, C, Baschirotto, A, Paccagnella, A, Jin, X, Gerardin, S, Bonaldo S., Mattiazzo S., Enz C., Baschirotto A., Paccagnella A., Jin X., and Gerardin S.

Abstract

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations.

Published
2019

24. Methodologies to study frequency-dependent single event effects sensitivity in flash-based FPGAs

Author

Battezzati, N., Gerardin, S., Manuzzato, A., Merodio, D., Paccagnella, A., Poivey, C., Sterpone, L., and Violante, M.

Subjects
Digital integrated circuits -- Testing, Digital integrated circuits -- Electric properties, Flash memory -- Testing, Flash memory -- Electric properties, Programmable logic array, Flash memory, Business, Electronics, Electronics and electrical industries
Published
2009

25. Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters

Author

Martin-Martinez, J., Gerardin, S., Amat, E., Rodriguez, R., Nafria, M., Aymerich, X., Paccagnella, A., and Ghidini, G.

Subjects
Complementary metal oxide semiconductors -- Design and construction, Direct current -- Usage, Metal oxide semiconductors -- Evaluation, Business, Electronics, Electronics and electrical industries
Abstract

The article studies the channel-hot-carrier (CHC) degradation and bias temperature instabilities (BTIs) of NMOS and PMOS transistors within CMOS inverters. Findings reveal BTI as the mechanism that controls the device degradation when a dc signal is applied at the input.

Published
2009

26. Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

Author

Andreani, C, Senesi, R, Paccagnella, A, Bagatin, M, Gerardin, S, Cazzaniga, C, Frost, C, Picozza, P, Gorini, G, Mancini, R, Sarno, M, Andreani C., Senesi R., Paccagnella A., Bagatin M., Gerardin S., Cazzaniga C., Frost C. D., Picozza P., Gorini G., Mancini R., Sarno M., Andreani, C, Senesi, R, Paccagnella, A, Bagatin, M, Gerardin, S, Cazzaniga, C, Frost, C, Picozza, P, Gorini, G, Mancini, R, Sarno, M, Andreani C., Senesi R., Paccagnella A., Bagatin M., Gerardin S., Cazzaniga C., Frost C. D., Picozza P., Gorini G., Mancini R., and Sarno M.

Abstract

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories.

Published
2018

27. 1GigaRad TID impact on 28 nm HEP analog circuits

Author

Resta, F, Gerardin, S, Mattiazzo, S, Paccagnella, A, De Matteis, M, Enz, C, Baschirotto, A, Resta, F., Gerardin, S., Mattiazzo, S., Paccagnella, A., De Matteis, M., Enz, C., Baschirotto, A., Resta, F, Gerardin, S, Mattiazzo, S, Paccagnella, A, De Matteis, M, Enz, C, Baschirotto, A, Resta, F., Gerardin, S., Mattiazzo, S., Paccagnella, A., De Matteis, M., Enz, C., and Baschirotto, A.

Abstract

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC 28 nm bulk CMOS technology have been realized and studied. Preliminary experimental results demonstrate nMOS structures more resistant than pMOS. Nevertheless, the considerable leakage current increment is not negligible because it could affect analog circuits as the pixel readout channel hereby presented. In the particular case, the high radiation level induces a gain reduction and a slowdown of the time response.

Published
2018

28. Degradation induced by X-ray irradiation and channel hot carrier stresses in 130-nm NMOSFETs with enclosed layout

Author

Silvestri, M., Gerardin, S., Paccagnella, A., and Faccio, F.

Subjects
X-rays -- Technology application, Metal oxide semiconductor field effect transistors -- Analysis, Electrons -- Scattering, Electrons -- Analysis, Technology application, Business, Electronics, Electronics and electrical industries
Abstract

We present new experimental results about channel hot carrier degradation of enclosed layout transistors as a function of previous accumulated total ionizing dose, stress temperature, and transistor geometry. We show that the parametric degradation follows a power law, whose exponent is higher than in conventional open layout transistors, possibly due to a different diffusion geometry of hydrogen. Through physical simulation we attribute this effect to the electric field at the device corners, which leads to a non-uniform impact ionization. Previous irradiation reduces the channel hot carrier degradation in MOSFETs with 5.2-nm gate oxide, while having a minor influence with 2.2-nm gate dielectric. Index Terms--CHC, enclosed layout transistor, hot-electrons, TID, X-ray.

Published
2008

29. Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides

Author

Porti, M., Gerardin, S., Nafria, M., Aymerich, X., Cester, A., and Paccagnella, A.

Subjects
Nanotechnology -- Research, Atomic force microscopy -- Usage, Oxides -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. In particular, conductive-AFM (C-AFM), scanning capacitance microscopy (SCM), and Kelvin probe force microscopy (KPFM) have been used to measure at the nanoscale level the electrical conduction, capacitance, and contact potential, respectively, of fresh, irradiated, and electrically stressed MOS capacitors. The electrical properties of the different samples have been compared and the impact of the irradiation analyzed. Index Terms--AFM, C-AFM, KPFM, radiation effects, SCM.

Published
2007

30. A new hardware/software platform and a new 1/E neutron source for soft error studies: testing FPGAs at the ISIS facility

Author

Violante, M., Sterpone, L., Manuzzato, A., Gerardin, S., Rech, P., Bagatin, M., Paccagnella, A., Andreani, C., Gorini, G., Pietropaolo, A., Cardarilli, G., Pontarelli, S., and Frost, C.

Subjects
Software -- Usage, Neutron beams -- Analysis, Software quality, Business, Electronics, Electronics and electrical industries
Abstract

We introduce a new hardware/software platform for testing SRAM-based FPGAs under heavy-ion and neutron beams, capable of tracing the bit-flips in the configuration memory back to the physical resources affected in the FPGA. The validation was performed using, for the first time, the neutron source at the RALISIS facility. The ISIS beam features a 1/E spectrum, which is similar to the terrestrial one with an acceleration between [10.sup.7] and [l0.sup.8] in the energy range 10-100 MeV. The results gathered on Xilinx SRAM-based FPGAs are discussed in terms of cross section and circuit-level modifications. Index Terms--FPGA, neutron source, radiation testing, Single Event Upset (SEU).

Published
2007

33. Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides

Author

Gerardin, S., Cester, A., Paccagnella, A., Gasiot, G., Mazoyer, P., and Roche, P.

Subjects
Complementary metal oxide semiconductors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

We present new experimental data about the radiation-induced breakdown in 1.7 nm gate oxides, typical of the 90nm technology node. We irradiated several MOS capacitors with n-and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing procedure was introduced based on a low voltage sensing of the gate current during irradiation. We showed that, even in spite of a smaller gate oxide field, irradiation was more damaging for biases in deep depletion than for biases in accumulation. We attributed this to the injection in the oxide of energetic carriers heated in the depletion region. In this regime of operation, we highlighted the differences in the gate current degradation of nMOS and pMOS devices: abrupt changes followed by a smooth growth in the first -ones, an increase proportional to the area in the second. Index Terms--CMOS, SEGR, ultra-thin gate oxides.

Published
2005

38. Characterizing High-Energy Ion Beams With PIPS Detectors

Author

Bagatin, M., primary, Ferlet-Cavrois, V., additional, Gerardin, S., additional, Muschitiello, M., additional, Paccagnella, A., additional, Costantino, A., additional, Santin, G., additional, Boatella Polo, C., additional, Alia, R. Garcia, additional, Fernandez Martinez, P., additional, and Kastriotou, M., additional

Published
2020
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40. Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC

Author

Gaioni, (Gaioni, L, Luigi), Barbero, (Barbero, Mb, ( 1 ), M. B., Fougeron, (Fougeron, D, ( 1 ), D., Godiot, (Godiot, S, ( 1 ), S., Menouni, (Menouni, M, ( 1 ), M., Pangaud, (Pangaud, P, ( 1 ), P., Rozanov, (Rozanov, A, ( 1 ), A., Breugnon, (Breugnon, P, Bomben, (Bomben, M, ( 2 ), M., Calderini, (Calderini, G, ( 2 ), G., Crescioli, (Crescioli, F, ( 2 ), F., Dortz, Le, O (Le Dortz, ( 2 ), O., Marchiori, (Marchiori, G, Dzahini, (Dzahini, D, ( 3 ), D., Rarbi, (Rarbi, Fe, ( 3 ), F. E., Gaglione, (Gaglione, R, ( 4 ), R., Kruger, (Krueger, H, ( 5 ), H., Daas, (Daas, M, ( 5 ), M., Dieter, (Dieter, Y, ( 5 ), Y., Hemperek, (Hemperek, T, ( 5 ), T., Hugging, (Huegging, F, ( 5 ), F., Moustakas, (Moustakas, K, ( 5 ), K., Pohl, (Pohl, D, ( 5 ), D., Rymaszewski, (Rymaszewski, P, ( 5 ), P., Standke, (Standke, M, Vogt, (Vogt, M, Wang, (Wang, T, Wermes, (Wermes, N, ( 5 ), N., Karagounis, (Karagounis, M, Stiller, (Stiller, A, ( 6 ), A., Marzocca, (Marzocca, C, ( 7 ), C., Robertis, De, G (De Robertis, ( 8 ), G., Loddo, (Loddo, F, ( 8 ), F., Licciulli, (Licciulli, F, Andreazza, (Andreazza, A, ( 9, A., 10, ), Liberali, (Liberali, V, V)(, 9, Stabile, (Stabile, A, Frontini, (Frontini, L, ( 9, L., Bagatin, (Bagatin, M, ( 11, M., 12, ), Bisello, (Bisello, D, ( 11, D., Gerardin, (Gerardin, S, ( 11, S., Mattiazzo, (Mattiazzo, S, Paccagnella, (Paccagnella, A, ( 11, A., Vogrig, (Vogrig, D, Bonaldo, (Bonaldo, S, Bacchetta, (Bacchetta, N, ( 11 ), N., ( 13, L., 14, ), Canio, De, F (De Canio, ( 13, F., Manghisoni, (Manghisoni, M, ( 13, M., (Re, V, V)(, 13, Riceputi, (Riceputi, E, ( 13, E., Traversi, (Traversi, G, ( 13, G., Ratti, (Ratti, L, ( 15, L., 16, ), Vacchi, (Vacchi, C, ( 15, C., Androsov, (Androsov, K, ( 18, K., 19, ), Beccherle, (Beccherle, R, ( 17 ), R., Magazzu, (Magazzu, G, ( 17 ), G., Minuti, (Minuti, M, ( 17 ), M., Morsani, (Morsani, F, ( 17 ), F., Palla, (Palla, F, Poulios, (Poulios, S, ( 17 ), S., Bilei, (Bilei, Gm, ( 20 ), G. M., Menichelli, (Menichelli, M, ( 20 ), M., Marconi, S., Placidi, P., Dellacasa, (Dellacasa, G, ( 22 ), G., Demaria, (Demaria, N, ( 22 ), N., Mazza, (Mazza, G, Monteil, (Monteil, E, ( 22 ), E., Pacher, (Pacher, L, ( 22 ), L., Paterno, (Paterno, A, ( 22, A., 23, ), Rivetti, (Rivetti, A, ( 22 ), A., Rolo, Mdd, (Rolo, Da Rocha)( 22 ), M. D., Gajanana, (Gajanana, D, ( 24 ), D., Gromov, (Gromov, V, V)( 24, ), Van, Eijk, B (van Eijk, ( 24 ), B., Kluit, (Kluit, R, ( 24 ), R., Vitkovskiy, (Vitkovskiy, A, ( 24 ), A., Benka, (Benka, T, ( 25 ), T., Havranek, (Havranek, M, ( 25 ), M., Janoska, (Janoska, Z, ( 25 ), Z., Marcisovsky, (Marcisovsky, M, Neue, (Neue, G, ( 25 ), G., Tomasek, (Tomasek, L, ( 25 ), L., Kafka, (Kafka, V, V)( 26, ), Vrba, (Vrba, V, ( 28 ), V., Lopez-Morillo, (Lopez-Morillo, E, ( 28 ), E., Palomo, (Palomo, Fr, ( 28 ), F. R., Munoz, (Munoz, F, ( 28 ), F., Vila, (Vila, I, I)( 27, ), Jimenez, Ems, (Jimenez, ( 27 ), E. M. S., Abbaneo, (Abbaneo, D, ( 29 ), D., Christiansen, (Christiansen, J, ( 29 ), J., Orfanelli, (Orfanelli, S, ( 29 ), S., Casas, Lmj, (Casas, Jara)( 29 ), L. M., Conti, (Conti, E, ( 29 ), E., Bell, (Bell, S, ( 30 ), S., Prydderch, (Prydderch, Ml, ( 30 ), M. L., Thomas, (Thomas, S, Christian, (Christian, Dc, ( 31 ), D. C., Deptuch, (Deptuch, G, ( 31 ), G., Fahim, (Fahim, F, ( 31 ), F., Hoff, (Hoff, J, ( 31 ), J., Lipton, (Lipton, R, ( 31 ), R., Liu, (Liu, T, ( 31 ), T., Zimmerman, (Zimmerman, T, Miryala, (Miryala, S, ( 31 ), S., Garcia-Sciveres, (Garcia-Sciveres, M, ( 32 ), M., Gnani, (Gnani, D, ( 32 ), D., Krieger, (Krieger, A, ( 32 ), A., Papadopoulou, (Papadopoulou, K, ( 32 ), K., Heim, (Heim, T, ( 32 ), T., Carney, (Carney, R, ( 32 ), R., Nachman, (Nachman, B, ( 32 ), B., Renteira, (Renteira, C, ( 32 ), C., Wallangen, (Wallangen, V, V)( 32, ), Hoeferkamp, (Hoeferkamp, M, ( 33 ), M., Seidel, (Seidel, S, ( 33 ), S., Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire d'Annecy de Physique des Particules (LAPP), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), RD53, and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Cmos chip, Nuclear and High Energy Physics, Scale (ratio), BitTorrent tracker, High-luminosity LHC, Low noise analog front-end, 01 natural sciences, Settore ING-INF/01 - Elettronica, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, semiconductor detector: pixel, ATLAS, CMS, Pixel readout chip, RD53, Micro-electronics and interconnections [4], 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, Instrumentation, activity report, radiation: damage, Physics, Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, radiation: effect, Emphasis (telecommunications), Mixed-signal integrated circuit, Chip, business, Computer hardware, performance, semiconductor detector: design
Abstract

International audience; The CERN RD53 collaboration was founded to tackle the extraordinary challenges associated with the design of pixel readout chips for the innermost layers of particle trackers at future high energy physics experiments. Around 20 institutions are involved in the collaboration, which has the support of both ATLAS and CMS experiments. The goals of the collaboration include the comprehensive understanding of radiation effects in the 65 nm technology, the development of tools and methodology to efficiently design large complex mixed signal chips and, ultimately, the development of a full size readout chip featuring a 400 × 400 pixel array with 50μm pitch. In August 2017, the collaboration submitted the large scale chip RD53A, integrating a matrix of 400 × 192 pixels and embodying three different analog front-end designs. This work discusses the characteristic of the RD53A chip, with some emphasis on the analog processors, and presents the first test results on the pixel array.

Published
2019

41. Gate Bias and Length Dependences of Total-Ionizing-Dose Effects in InGaAs FinFETs on Bulk Si

Author

Zhao, S. E., Bonaldo, S., Wang, P., Jiang, R., Gong, H., Zhang, E. X., Waldron, N., Kunert, B., Mitard, J., Collaert, N., Sioncke, S., Linten, D., Schrimpf, R. D., Reed, R. A., Gerardin, S., Paccagnella, A., and Fleetwood, D. M.

Subjects
total ionizing dose (TID), FinFETs, InGaAs, bulk Si, border trap, III–V, gate-length dependence, 1/ f noise, 1/ f noise, III–V, border trap, bulk Si, FinFETs, gate-length dependence, InGaAs, total ionizing dose (TID)
Published
2019

42. Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Author

Andreou, C. M., Javanainen, A., Rominski, A., Virtanen, A., Liberali, V., Calligaro, C., Prokofiev, A. V., Gerardin, S., Bagatin, M., Paccagnella, A., Gonzalez-Castano, D. M., Gomez, F., Nahmad, D., Georgiou, J., and Georgiou, J. [0000-0002-7474-5449]

Subjects
mikroelektroniikka, Nuclear and High Energy Physics, Bandgap voltage reference, circuit topology, single-event transient (SET), Integrated circuit, 01 natural sciences, law.invention, single event transients, Current mirror, law, pulse quenching, single-event effects (SEE), ionization, radiation hardening by design (RHBD), 0103 physical sciences, Electronic engineering, Microelectronics, Analog single-event transient (ASET), bandgap voltage reference (BGR), charge sharing, CMOS analog integrated circuits, heavy ion, parasitic bipolar effect, radiation effects, reference circuits, space electronics, Voltage reference, Nuclear Energy and Engineering, Electrical and Electronic Engineering, reference voltage, 010302 applied physics, Physics, ta114, ta213, 010308 nuclear & particles physics, business.industry, analog integrated circuits, Transistor, Pulse duration, Pulse (physics), Pulse-amplitude modulation, microelectronics, space applications, Optoelectronics, business
Abstract

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.

Published
2016

45. RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades

Author

Monteil, Ennio, primary, Barbero, M., additional, Fougeron, D., additional, Godiot, S., additional, Menouni, M., additional, Pangaud, P., additional, Rozanov, A., additional, Breugnon, P., additional, Bomben, Marco, additional, Calderini, G., additional, Crescioli, F., additional, Marchiori, G., additional, Dzahini, D., additional, Rarbi, F.E., additional, Gaglione, R., additional, Krueger, H., additional, Hemperek, T., additional, Huegging, F., additional, Rymazewski, P., additional, Vogt, M., additional, Wang, T., additional, Wermes, N., additional, Karagounis, M., additional, Marzocca, C., additional, Loddo, F., additional, Licciulli, F., additional, Andreazza, A., additional, Liberali, V., additional, Stabile, A., additional, Frontini, L., additional, Bagatin, M., additional, Bisello, D., additional, Gerardin, S., additional, Mattiazzo, S., additional, Paccagnella, A., additional, Vogrig, D., additional, Bonaldo, S., additional, Bacchetta, N., additional, Gaioni, L., additional, Manghisoni, M., additional, Re, V., additional, Riceputi, E., additional, Traversi, G., additional, Ratti, L., additional, Vacchi, C., additional, Androsov, K., additional, Beccherle, R., additional, Magazzù, G., additional, Minuti, M., additional, Morsani, F., additional, Palla, F., additional, Poulios, S., additional, Bilei, G.M., additional, Menichelli, M., additional, Placidi, P., additional, Marconi, S., additional, Dellacasa, G., additional, Demaria, N., additional, Mazza, G., additional, Monteil, E., additional, Pacher, L., additional, Rivetti, A., additional, Paternò, A., additional, Gajanna, D., additional, Gromov, V., additional, Kluit, R., additional, Vitkovskiy, A., additional, Benka, T., additional, Havranek, M., additional, Janoska, Z., additional, Marcisovsky, M., additional, Neue, G., additional, Tomasek, L., additional, Kafka, V., additional, Vrba, V., additional, Lopez-Morillo, E., additional, Palomo, F.R., additional, Munoz, F., additional, Vila, Ivan, additional, Jiménez, E., additional, Abbaneo, D., additional, Christiansen, J., additional, Orfanelli, S., additional, Bell, S.J.M., additional, Prydderch, M., additional, Thomas, S., additional, Christian, D.C., additional, Deptuch, G., additional, Fahim, F., additional, Hoff, J., additional, Zimmerman, T., additional, Miryala, S., additional, Garcia-Sciveres, M., additional, Gnani, D., additional, Krieger, A., additional, Papadopoulou, K., additional, Heim, T., additional, Carney, R., additional, Nachman, Benjamin, additional, Renteira, C., additional, Wallangen, V., additional, Hoeferkamp, M.R., additional, Seidel, S., additional, Daas, M., additional, Dieter, Y., additional, Moustakas, K., additional, Stiller, A., additional, Lipton, R., additional, and Liu, T. C., additional

Published
2019
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47. Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC

Author

Marconi, S., primary, Barbero, M. B., additional, Fougeron, D., additional, Godiot, S., additional, Menouni, M., additional, Pangaud, P., additional, Rozanov, A., additional, Breugnon, P., additional, Bomben, M., additional, Calderini, G., additional, Crescioli, F., additional, Dortz, O. Le, additional, Marchiori, G., additional, Dzahini, D., additional, Rarbi, F. E., additional, Gaglione, R., additional, Kruger, H., additional, Daas, M., additional, Dieter, Y., additional, Hemperek, T., additional, Hugging, F., additional, Moustakas, K., additional, Pohl, D., additional, Rymaszewski, P., additional, Standke, M., additional, Vogt, M., additional, Wang, T., additional, Wermes, N., additional, Karagounis, M., additional, Stiller, A., additional, Marzocca, C., additional, Marzocca, G., additional, De Robertis, G., additional, Loddo, F., additional, Licciulli, F., additional, Andreazza, A., additional, Liberali, V., additional, Stabile, A., additional, Frontini, L., additional, Bagatin, M., additional, Bisello, D., additional, Gerardin, S., additional, Mattiazzo, S., additional, Paccagnella, A., additional, Vogrig, D., additional, Bonaldo, S., additional, Bacchetta, N., additional, Gaioni, L., additional, De Canio, F., additional, Manghisoni, M., additional, Re, V., additional, Riceputi, E., additional, Traversi, G., additional, Ratti, L., additional, Vacchi, C., additional, Androsov, K., additional, Beccherle, R., additional, Magazzu, G., additional, Minuti, M., additional, Morsani, F., additional, Palla, F., additional, Poulios, S., additional, Bilei, G. M., additional, Menichelli, M., additional, Placidi, P., additional, Dellacasa, G., additional, Demaria, N., additional, Mazza, G., additional, Monteil, E., additional, Pacher, L., additional, Paterno, A., additional, Rivetti, A., additional, Da Rocha Rolo, M. D., additional, Gajanana, D., additional, Gromov, V., additional, van Eijk, B., additional, Kluit, R., additional, Vitkovskiy, A., additional, Benka, T., additional, Havranek, M., additional, Janoska, Z., additional, Marcisovsky, M., additional, Neue, G., additional, Tomasek, L., additional, Kafka, V., additional, Vrba, V., additional, Lopez-Morillo, E., additional, Palomo, F. R., additional, Munoz, F., additional, Vila, I., additional, Jimenez, E. M. S., additional, Abbaneo, D., additional, Christiansen, J., additional, Orfanelli, S., additional, Jara Casas, L. M., additional, Conti, E., additional, Bell, S., additional, Prydderch, M. L., additional, Thomas, S., additional, Christian, D. C., additional, Deptuch, G., additional, Fahim, F., additional, Hoff, J., additional, Lipton, R., additional, Liu, T., additional, Zimmerman, T., additional, Miryala, S., additional, Garcia-Sciveres, M., additional, Gnani, D., additional, Krieger, A., additional, Papadopoulou, K., additional, Heim, T., additional, Carney, R., additional, Nachman, B., additional, Renteira, C., additional, Wallangen, V., additional, Hoeferkamp, M., additional, and Seidel, S., additional

Published
2018
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48. Design of analog front-ends for the RD53 demonstrator chip

Author

Luigi Gaioni, F. De Canio, Nodari, B, Manghisoni, M, Re, V, Traversi, G, Barbero, M. B, Fougeron, D, Gensolen, F, Godiot M. Menouni, S, Pangaud, P, Rozanov, A, Wang, A, Bomben, M, Calderini, G, Crescioli, F, Le Dortz, O, Marchiori, G, Dzahini, D, Rarbi, F. E, Gaglione, R, Gonella, L, Hemperek, T, Huegging, F, Karagounis, M, Kishishita, T, Krueger, H, Rymaszewski, P, Wermes, N, Ciciriello, F, Corsi, F, Marzocca, C, De Robertis, G, Loddo, F, Licciulli, F, Andreazza, A, Liberali, V, Shojaii, S, Stabile, A, Bagatin, M, Bisello, D, Mattiazzo, S, Ding, L, Gerardin, S, Giubilato, P, Neviani, A, Paccagnella, A, Vogrig, D, Wyss, J, Bacchetta, N, Della Casa, G, Demaria, N, Mazza, G, Rivetti, Angelo, Da Rocha Rolo, M. D, Comotti, D, Ratti, L, Vacchi, C, Beccherle, R, Bellazzini, R, Magazzu, G, Minuti, M, Morsani, F, Palla, F, Poulios, S, Fanucci, L, Rizzi, A, Saponara, S, Androsov, K, Bilei, G. M, Menichelli, M, Conti, E, Marconi, S, Passeri, D, Placidi, P, Monteil, E, Pacher, L, Gajanana, D, Gromov, V, Hessey, N, Kluit, R, Zivkovic, V, Havranek, M, Janoska, Z, Marcisovsky, M, Neue, G, Tomasek, L, Kafka, V, Sicho, P, Vrba, V, Vila, I, Lopez Morillo, E, Aguirre, M. A, Palomo, F. R, Munoz, F, Abbaneo, D, Christiansen, J, Dannheim, D, Dobos, D, Linssen, L, Pernegger, H, Valerio, P, Alipour Tehrani, N, Bell, S, Prydderch, M. L, Thomas, S, Christian, D. C, Fahim, F, Hoff, J, Lipton, R, Liu, T, Zimmerman, T, Garcia Sciveres, M, Gnani, D, Mekkaoui, A, Gorelov, I, Hoeferkamp, M, Seidel, S, Toms, K, De Witt, J. N, and Grillo, A.

Published
2017

49. Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers

Author

Alayan, M., Bagatin, M., Gerardin, S., Paccagnella, A., Vianello, E., Nowak, E., De Salvo, B., Larcher, Luca, and Perniola, L.

Subjects
Radiation Effects, Radiation, Flash, Resistive Memories, Single Event Upset, Electrical and Electronic Engineering
Published
2017

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