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The work centered mainly in four areas: two new photolithographic mask sets were devised to insure the necessary geometrical variations were investigated. These new sets will enable both epitaxial and nonepitaxial techniques to be more fully developed; stable processing steps were formulated with results shown on capacitance-voltage plots; advanced devices were fabricated using information obtained from the initial production group; reliability information was compiled and certain conclusions were drawn. (Author), See also AD-634 828.