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The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal-semiconductor-metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS

The low voltage-operational thin-film type of the high-quality nanoporous ZnMnO (Mn: ∼18 at.%) green phosphor was fabricated by grain boundary engineering via the thermal nucleation of the well-crystallized columnar ZnMnO thin film. Vertically-aligned nanopores were observed to be formed throughout the whole area of the ZnMnO phosphor film; and the impact excitation of Mn2+ centers and the defect-mediated optical transition in nanoporous ZnMnO significantly enhanced green light emission in the nanoporous cavity. The results suggest nanoporous ZnMnO to hold promise for the next-generation color-field panels as a new type of the thin-film phosphor. The material characteristics, including the structural, electrical, and optical properties, are meticulously examined, and the formation mechanism of nanoporous ZnMnO and the origin of its low-voltage strong-green-cathodoluminescence are described.

The paper presents temperature-dependent Raman studies of anharmonic phonon properties of graphene as-grown on copper, transferred to copper, SiO2/Si, and Al2O3, as well as nitrogen-doped graphene on SiO2/Si. Different G and 2D peak position and linewidth temperature dependencies were obtained in the temperature range of 20–294 K, upon which anharmonic constants for 3- and 4-phonon processes were determined. Values of anharmonic constants obtained from G peak shift for undoped graphene on dielectric substrates were quantitatively close to both experimental results for unsupported graphene and theoretical predictions reported in the literature, while the values for graphene as-grown on copper were almost two orders of magnitude greater. The results were analyzed in terms of substrate effect on phonon properties of graphene. The present study is useful for taking into account anharmonic phonon effects in graphene when designing graphene-based nanoelectronic devices.

In this paper for the first time, a comparison was made of the electrochemical activity of graphene oxides synthesized by modified Hummer's, Brodie and electrochemical methods in aprotic media. Electrodes based on these GOs exhibit electrochemical activity in an aprotic solvent of propylene carbonate with 0.1 M (C4H9)4NClO4 electrolytes in the potential range from -3 to 1 V rel. Ag+/Ag in 0.01M AgNO3 0.1M (C4H9)4NClO4 in acetonitrile. These redox processes are irreversible. Despite the fact that the types of oxygen groups in GO synthesized by different methods are the same, the ratio of these groups is different. The specific capacity of electrodes based on GO during redox processes in aprotic media correlates with the C:O ratio determined from elemental analysis. The use of new active electrode materials based on graphene in electrochemical processes will allow the creation of electrochemical energy storage devices with a higher energy density and capacity.

Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.

The influence of quantum well structure and growth temperature on a synthesized multilayer system composed of a five-layer InMnGaAs quantum well with an InGaAs buffer layer grown on semi-insulating (100)-oriented substrates prepared by low temperature molecular beam epitaxy was studied. The magnetization measurements using a superconducting quantum interference device indicated the existence of ferromagnetism with a Curie temperature above room temperature in the five-layer InGaMnAs quantum well structure with an InGaAs buffer layer in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements confirmed the second phase formation of ferromagnetic GaMn clusters. The ferromagnetism that exists in the five-layer of the InMnGaAs quantum well with the InGaAs buffer layer results from a superposition of the ferromagnetism of the low temperature region from the substitutional Mn ions into Ga sites or interstitial Mn ions as well as the presence of manganese ions dopant clusters such as GaMn clusters.

Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.

MoS2/reduced graphene oxide (rGO) nanocomposites were synthesized using an ultrasonic pretreatment with a single-stage hydrothermal and reduction process. Self-assembled MoS2 layers in the rGO matrix were obtained. The effect of quantum confinement in the structure, controlled by the degree of reduction of graphene oxide and the size of the 2D MoS2 nanocrystals, made it possible to obtain tunable optical absorption. MoS2/rGO layered nanocomposites exhibit a wide UV-IR absorption in the wavelength range from 280 nm to 973 nm, which is attractive for highly efficient multiband solar cells and advanced photonics.

4H-SnS2 layered crystals synthesized by a hydrothermal method were used to obtain via liquid phase exfoliation quantum dots (QDs), consisting of a single layer (SLQDs) or multiple layers (MLQDs). Systematic downshift of the peaks in the Raman spectra of crystals with a decrease in size was observed. The bandgap of layered QDs, estimated by UV-visible absorption spectroscopy and the tunneling current measurements using graphene probes, increases from 2.25 eV to 3.50 eV with decreasing size. 2–4 nm SLQDs, which are transparent in the visible region, show selective absorption and photosensitivity at wavelengths in the ultraviolet region of the spectrum while larger MLQDs (5–90 nm) exhibit a broad band absorption in the visible spectral region and the photoresponse under white light. The results show that the layered quantum dots obtained by liquid phase exfoliation exhibit well-controlled and regulated bandgap absorption in a wide tunable wavelength range. These novel layered quantum dots prepared using an inexpensive method of exfoliation and deposition from solution onto various substrates at room temperature can be used to create highly efficient visible-blind ultraviolet photodetectors and multiple bandgap solar cells.

Zinc oxide (ZnO) nanostructures were successfully incorporated into carbon nanotubes (CNTs) using an arc discharge method. Studies of the morphologies of ZnO incorporated CNTs (ZnO-CNTs) revealed that ZnO nanoparticles were attached on the exterior of CNTs. X-ray diffraction, Raman spectra and cathodoluminescence (CL) spectra revealed the existence of ZnO. The I D / I G ratios from Raman spectroscopy for the CNTs and ZnO-CNTs were 0.44 and 0.51, respectively, suggesting an increased degree of disorder of the CNT walls after the incorporation of ZnO. The deep red CL emission peak at 747 nm originated from ZnO defect emission in ZnO incorporated CNTs. X-ray photoelectron spectroscopy results revealed that sp 3 -hybridized C O bonds at 286.2 eV in ZnO-CNTs had higher intensities than CNTs, indicating presence of more C O bonds in ZnO-CNTs. A low turn-on field of ~ 1.5 V μm − 1 at a current density of 0.1 μA cm − 2 , low threshold field of ~ 2.9 V μm − 1 at a current density of 1 mA cm − 2 , high field enhancement factor (5741), and stable emission current were obtained from ZnO-CNTs. The simplicity of synthesis, coupled with the promising emission results, make ZnO-CNTs a promising candidate for low-cost, compact CNT cold cathode materials.

MoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low-dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H-1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real-time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.

Optical modulation of resistive switching in an optoelectronic memristor allows it to be optically controlled at ultra-high speed and ultra-low power consumption. Optical memristive systems with memory elements switched by electromagnetic radiation can be used in optically reconfigurable and tunable neural networks for neuromorphic computing and brain-inspired artificial intelligence systems. Two-dimensional (2D) crystals with unique electrical and optical properties demonstrate tremendous potential in the creation of highly efficient information and sensor systems for real-time data monitoring and processing. In this paper, we consider optoelectronic structures based on graphene, graphene oxide, and molybdenum disulfide for dynamic memristive signal processing. 2D optoelectronic memristor structures exhibit multiple states, which can be monitored in a wide range of optical excitations and used as sensors for pattern recognition and image processing. An optoelectronic dynamic memristive structure with quantum dots (QDs), controlled by ultrafast photoinduced structural phase transitions, is promising for creating information systems with stochastic data processing. The phase transition, controlled by charge and temperature, results in tunable periodic oscillations due to two state variables that exhibit chaotic behavior similar to that which occurs in a biological neuron network.

The voltage-tunable multicolor emission was realized in a poly(p-phenylene)/nanoporous ZnMnO organic–inorganic hybrid light-emitting diode. Red, green, and blue (RGB) colors sequentially appeared with increasing magnitude of the bias voltage (i.e., R → RG → RGB with V↑). At a higher voltage (>2.4 V), eventually, the device emitted the visible light with a mixture of colors including RGB. These unique features may move us a step closer to the application of organic–inorganic hybrid solid-state lighting devices for the full-color display and/or the electrical-to-optical data converter for multivalue electronic signal processes. In-depth analyses on electrical and optical properties are presented, and voltage-controllable multicolor-emission mechanisms are discussed.

This study is a continuation of a cycle of studies into the effect of Atlantic climate on the hydrometeorological regime of European Russia. In this article, an attempt is made to analyze the effect of climate variations in the Atlantic on the Don basin and the hydrological regime of the Tsimlyansk Reservoir. A new composite index of heat transfer NAAII (North Atlantic Air Interaction Index) is suggested, the use of which enables the explanation of changes that have taken place in the Don basin. Evaporation was evaluated with the bathymetry of the Tsimlyansk Reservoir taken into account, and the water level of 32 m abs. was shown to be critical in the interaction between the reservoir and the atmosphere.

The increasing interest and rapid progress in the artificial neural networks have driven extensive research in resistive switching memory based on various insulators and two-dimensional nanomaterials. Herein, we have demonstrated a kind of resistive switching memory device based on GaSe layered nanorods fabricated by liquid phase exfoliation (LPE) method with a lateral graphene/GaSe/graphene structure. The single crystalline GaSe layered nanorods mixed with a few nanoflakes were synthesized by shear and ultrasonic (bath and probe) exfoliation methods, which showed high quality and hexagonal crystalline structure. The electrical properties and the resistive switching behavior were investigated, indicating the charge trapping/detrapping effect is the dominant resistive switching mechanism. This work suggests a novel strategy to develop the resistive switching devices based on various 2D materials by using LPE method, and these 2D-nanomaterials-based memristors have the potential to be used for constructing neuromorphic computing systems.

The cause of Caspian level variations is still to be found, and their forecasting is still among the problems to be solved. This study proposes a new approach based on the results of analysis of the effect the North Atlantic has on climate formation in the Caspian Sea basin. The article presents the results of analysis of moisture transport into the Caspian Sea basin, as well as a relationship between precipitation and temperature in this basin and the indices of atmospheric and oceanic circulation for the periods of Caspian level drop and rise. A pioneer study of moisture transport from the North Atlantic showed this transport to govern the formation of Caspian Sea level regime.

We demonstrate that a correlation exists between the tendencies in the climatic variations in the Arctic and oscillations of the oceanic circulation intensity in the North Atlantic. We present the results illustrating reliable reproduction of the Arctic ice concentration using a model of the general ocean circulation under prescribed atmospheric forcing based on the NCEP reanalysis data during the period from 1948 to 2009. We show that the decrease in the intensity of the Atlan� tic Thermohaline Circulation (ATC) that started in the beginning of the 21st century may provide evi� dence of a possible change in the ice concentration in the Arctic. A scenario of the inertial forecast obtained under the prescribed atmospheric forcing confirms this and demonstrates the tendency to an increase in the ice concentration in the Arctic up to 2020 with its further decrease.

We report the epitaxial growth of c-plane GaN films on a novel langasite (La3Ga5SiO14, LGS) substrate by plasma-assisted molecular beam epitaxy. The in-plane epitaxial relationship and the structural properties of GaN films on an LGS substrate were investigated using in situ reflective high energy electron diffraction (RHEED), high resolution X-ray diffraction (HR-XRD) and Raman spectroscopy. The in-plane epitaxial relationship between GaN and LGS determined using RHEED pattern was found to be GaN[100]//LGS[210] and GaN[110]//LGS[140]. HR-XRD results confirmed the exact epitaxial relationship, and showed that six reflection peaks of GaN(102) were shifted around 19° from those of LGS(102). Raman analysis revealed that a minute compressive strain still existed in the GaN film due to the very small lattice mismatch between GaN and LGS. The results obtained in this study demonstrate that the nearly lattice-matched LGS can be a promising and futuristic substrate material for the growth of GaN, and it is foreseen that our results could be a reference for the further development of high performance nitride-based devices.

MoS

A novel green luminescent and phosphorescent material of semiconductive nanoporous ZnMnO was synthesized by the thermal nucleation of nanopores in the 20-period Zn0.93Mn0.07O/Zn0.65Mn0.35O multilayer structure. Nanoporous ZnMnO showed an n-type semiconducting property and exhibited an extremely strong green light emission in its luminescence and phosphorescence characteristics. This arises from the formation of the localized energy level (i.e., green emission band) within the energy band gap and the confinement of photons. The results suggest nanoporous ZnMnO to have a great potential for the new type of semiconducting green phosphors and semiconductor light-emitting diodes with lower thresholds, producing an efficient light emission. In-depth analyses on the structural, electrical, and optical properties are thoroughly examined, and the formation mechanism of nanoporous ZnMnO and the origin of the strong green light emission are discussed.

4H-SnS

Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T−4) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO2/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation.

Using X-ray photoemission microscopy, we discovered that oxidation of commercial large-scale graphene on Cu foil, which typically has bilayer islands, by atomic oxygen proceeds with the formation of the specific structures: though relatively mobile epoxy groups are generated uniformly across the surface of single-layer graphene, their concentration is significantly lower for bilayer islands. More oxidized species like carbonyl and lactones are preferably located at the centers of these bilayer islands. Such structures are randomly distributed over the surface with a mean density of about 3× 106 cm–2 in our case. Using a set of advanced spectromicroscopy instruments including Raman microscopy, X-ray photoelectron spectroscopy (μ-XPS), Auger electron spectroscopy (nano-AES), and angle-resolved photoelectron spectroscopy (μ-ARPES), we found that the centers of the bilayer islands where the second layer nucleates have a high defect concentration and serve as the active sites for deep oxidation. This information can be potentially useful in developing lateral heterostructures for electronics and optoelectronics based on graphene/graphene oxide heterojunctions., The work is performed within the joint project of the Russian Science Foundation (16-42-01093) and DFG (LA655-17/1). The work of O.O.K. was supported by the Russian Foundation of Basic Researches (individual project 16-33-60229).

Correlations between the changes in the climate of the Caspian Sea region and in its level and the variations in the North Atlantic climate are studied. The indices of North Atlantic oscillation (NAO), Atlantic multidecadal oscillation (AMO), the intensity of Atlantic thermohaline circulation (ATHC), and the air humidity above the North Atlantic are used as basic indicators of climatic variations that influence the Caspian Sea. Results of an experiment for reproducing the World Ocean circulation and the parameterization of cyclic climate peculiarities made it possible to reveal their impact on the formation of Eurasian climatic variability and on the level regime of the Caspian Sea. This impact is studied through the variability of ATHC, the NAO index, and a composite index of moisture transport (CIMT) that is proposed as a result of the studies.

We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/p-GaN VCLEDs on a large area of about 4 cm2. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurallyperfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

Using Raman and photoemission spectroscopy, we probe the atmospheric adsorption on pristine and nitrogen p -doped graphene supported by SiO2/Si. Laser annealing in vacuum led to a pronounced change in Raman spectra parameters, corresponding to a decrease in hole density due to adsorbate removal from the sample surface. We found that the shift inversely correlates with a degree of initial nitrogen doping, and thus less p -type adsorption doping takes place on graphene with a higher density of charge carriers with the same sign. The amount of hole doping required for the absence of atmospheric adsorption doping was found to be p noad = (3.87 ± 0.31) × 1013 cm−2 (~2.3% of pyridine-like nitrogen), while the electronic doping required to fully compensate adsorption hole doping was n equil = (0.46 ± 0.12) × 1013 cm−2 (~0.2% of graphitic nitrogen). We showed that atmospheric adsorption on pristine graphene increases the spatial charge carrier inhomogeneity; in contrast, the adsorption on nitrogen-doped graphene shows a spatially selective nature and reduces the inhomogeneity of charge carriers. This study is useful for graphene applications which require specific adsorption properties, as well as for taking these properties into account when designing graphene-based nanoelectronic devices.

We fabricated a silver ion emitter based on the solid state electrolyte film of RbAg4I5 prepared by pulsed laser deposition. The RbAg4I5 target for PLD process was mechano-chemically synthesized by high-energy ball milling in Ar atmosphere using β-AgI and RbI as raw materials. The ion-conducting properties of RbAg4I5 were studied by alternating current (AC) impedance spectroscopy and the ionic conductivity at room temperature was estimated 0.21 S/m. The structure, morphology, and elemental composition of the RbAg4I5 film were investigated. The Ag+ ion-conducting property of the prepared superioni-conductor film was exploited for ion–beam generation. The temperature and accelerating voltage dependences of the ion current were studied. Few nA current was obtained at the temperature of 196 °C and the accelerating voltage of 10 kV.

Vertically aligned and uniform ZnO1−xSx NRs with blue–green luminescence were obtained on glass using the hydrothermal method. The ratio of the blue to green luminescence intensities increases with thiourea doping and the positions of the luminescence peaks are red-shifted. At high doping concentration of thiourea, phase and morphology separations lead to formation of NR arrays with varied luminescent and electronic properties. The vertical ZnOS NRs p–n junctions could be self-assembled as indicated by SEM measurements in a through-the lens secondary electron mode.

Self-assembled ZnO nanorods/graphene field emission structures were fabricated by using a hydrothermal growth of nanorods on few layer graphene (FLG) substrates. The FLG patterned electrode was used to improve the contact resistance and to control the density and the area of field emission. This approach allows creation of high-performance field emission devices over a large area using an inexpensive low-temperature growth and FLG patterned substrates. The obtained ZnO NRs/FLG field emission structures operate at a low vacuum of 10 −5 Torr and low turn-on electric field of 0.9 V/µm, demonstrating a high field enhancement factor β =5556.

The evaporation regime of Lake Ladoga is specified using the renewed meteorological data. The traditional approach is supplemented with a new method of estimating the impact of shallow-water zones on the evaporation intensification worked out by G.N. Panin. The obtained results corroborate that the level of precipitation minus evaporation varies in different zones of the lake that can influence the water mass redistribution in the lake in certain seasons.

We present a simple way to prepare low-resistance ZnO nanorods by hydrothermal self-assembled growth at 95 °C and in situ doped with Al. The NRs were grown on graphene/Ni/Si and annealed at 400 °C. Few layer graphene was used to assist aligned growth of the NRs and acted as an electrode during electric measurement. The measurement showed resistance of the Al-doped ZnO NRs 100 times lower than that of undoped ZnO NRs. Photoluminescence measurement showed enhanced deep level emission for the Al-doped NRs and low temperature photoluminescence study showed coexistence of acceptor bound-exciton (3.353 eV) and donor bound-exciton (3.362 eV).

Scientific Reports 6: Article number: 31224; published online: 05 August 2016; updated: 14 November 2016

A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

We report preparation of graphene oxide (GO)/graphene (G) nanostructures and their structural, optical and electrical properties. GO was synthesized through oxidation of graphite by using the modified Hummer’s method, in which a long oxidation time was combined with a highly effective method for purifying the reaction products. The obtained GO was partially reduced (r-GO) by adding ascorbic acid and thermal annealing. An electrical reduction/oxidation process in r-GO under an electric field was used to form and control the GO/G nanostructures and the potential barrier at the interface. After the treatment, the ratio of the intensity of peak G (1578 cm−1) to that of peak D (1357 cm−1) in Raman spectra of the samples is increased, which is attributed to an increase in the ratio between the sp2 and sp3 regions. The electrical and the luminescence characteristics of the GO/G nanostructures were investigated.

The luminescent properties of core-shell nanocrystal structures were investigated with high spatial resolution. The composites consisting of ZnO/MgO core/shell nanoheteroparticles showed an increase in the relative intensity of the green luminescence after annealing while a suppression of green luminescence from samples of ZnO tetrapods in a MgO nanoparticle matrix was observed. Combined spatially-resolved combined through-the-lens-detector (TLD) and cathodoluminescence (CL) measurements revealed that the depletion of electrons in the ZnO nanocrystals could lead to a suppression of the luminescence.

The paper is based on a box model of heat and mass exchange with the incorporation of a block for calculating latent heat flux, supplemented by parameterization of heat and mass exchange between shallow water area and the atmosphere. The results of calculation of evaporation from the water area of the Ivankovo Reservoir, with allowance made for more intense evaporation from shallows, are given. The latent heat fluxes from shallow and deep-water zones of the water body are shown to differ, depending on weather conditions and water level; the increase in the evaporated-water volume due to taking into account the shallow-water effect is evaluated.

In this study, a novel attempt has been made to establish Au decorated multilayered graphene (MLG) structures using Shipley׳s photoresist as the carbon source. Au decorations on the multilayers were achieved through mixing the Au precursors directly with the photoresist and their subsequent oxidization over the catalytic metal substrate. The electron microscopic results revealed the homogenous distribution of Au nanoparticles across the multilayer graphene structures. The Au core level X-ray photoelectron spectroscopic measurements confirmed them to exist in form of nanoparticles. The weak D bands observed in Raman spectra signify the reduced defect levels in multilayer films. The current–voltage characteristics revealed a significant reduction in the sheet resistance values for the Au decorated multilayer graphene structures.

Vertically oriented arrays of zinc oxide nanorods with high structural perfection and good optical properties have been obtained by gas-phase synthesis from the elements on the substrates. Homogeneous and heterogeneous e-n transitions have been produced on the basis of these arrays of nanorods. Thermal growth from salt mixtures has been used to synthesize zinc oxide nanorods doped with transition metals (Fe, Mn, Cr). Zinc oxide nanorods doped with iron, manganese, tin, and lithium showed room-temperature ferromagnetic properties. Two-terminal planar structures have been produced from the nanorods doped with chrome. These structures are sensitive to ultraviolet radiation and insensitive to visible light. The field-effect transistor made from the zinc oxide nanorod doped with chrome has electron conductivity and works in the enhancement mode.

Air temperature variations are studied in the territory of the middle and high latitudes of the Northern Hemisphere. Estimates of the intraregional homogeneity of current climate changes were used to carry out zoning by several criteria for the XX and early XXI centuries. Six zones with typical climate change were identified: the Pacific, Canadian, Atlantic, European, Siberian, and Far Eastern. A new approach is proposed to the description of possible regional and global climate changes in the Northern Hemisphere basing on a combination of “greenhouse” and “rotational” effects. It is shown that the data on variations in the angular velocity of the Earth’s rotation can be used as a universal indicator of climate changes on the planet. The proposed approach made it possible to account for not only the growth in temperature caused by greenhouse gas emission, but also climate changes (in particular, the cooling of the 1940s–1970s). A concept is developed, allowing a new scenario of possible climate changes in the XXI century to be proposed.