Search

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($\eta_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.

In this paper, we demonstrate that a few-period circular Bragg reflector around an infinite nanowire can increase the $\beta$ factor of the fundamental mode up to 0.999 due to further suppression of the emission into radiation modes caused by a photonic band gap effect. We then apply this strategy in the practically relevant case of the finite-sized SPS based on tapered nanowires and demonstrate that the collection efficiency can be further increased. Additionally, we also show the beneficial effects of adding optimized high-index rings around the micropillar SPS.

We present a detailed analysis of the physics governing the collection efficiency and the Purcell enhancement of the nanopost single-photon source. We show that a standard single-mode Fabry-P\'erot model is insufficient to describe the device performance, which benefits significantly from scattering from the fundamental mode to radiation modes. We show how the scattering mechanism decouples the collection efficiency from the Purcell enhancement, such that maximum collection efficiency is obtained off-resonance. Finally, we discuss how this scattering mechanism can be beneficial for future single-photon source designs.

An on-going challenge within scalable optical quantum information processing is to increase the collection efficiency $\varepsilon$ and the photon indistinguishability $\eta$ of the single-photon source towards unity. Within quantum dot-based sources, the prospect of increasing the product $\varepsilon \eta$ arbitrarily close to unity was recently questioned. In this work, we discuss the influence of the trade-off between efficiency and indistinguishability in the presence of phonon-induced decoherence, and we show that the photonic "hourglass" design allows for improving $\varepsilon \eta$ beyond the predicted maximum for the standard micropillar design subject to this trade-off. This circumvention of the trade-off is possible thanks to control of the spontaneous emission into background radiation modes, and our work highlights the importance of engineering of the background emission in future pursuits of near-unity performance of quantum dot single-photon sources., Comment: Added some small sections discussing possible reduction in indistinguishability due to charge noise, the possibility of electrical pumping, and some additional excitation schemes. Added small clarifications regarding the indistinguishability of QDs in bulk, the usage of dielectric screening in photonic crystals, and on the strong coupling regime

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

Hybrid quantum optomechanical systems offer an interface between a single two-level system and a macroscopical mechanical degree of freedom. In this work, we build a hybrid system made of a vibrating microwire coupled to a single semiconductor quantum dot (QD) via material strain. It was shown a few years ago, that the QD excitonic transition energy can thus be modulated by the microwire motion. We demonstrate here the reverse effect, whereby the wire is set in motion by the resonant drive of a single QD exciton with a laser modulated at the mechanical frequency. The resulting driving force is found to be almost 3 orders of magnitude larger than radiation pressure. From a fundamental aspect, this state dependent force offers a convenient strategy to map the QD quantum state onto a mechanical degree of freedom., Comment: 16 pages, 12 figures

We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode during its relaxation, using the emission of the QD ensemble as a broadband internal light source. Sub-ensembles of QDs emitting at a given frequency, interact transiently with the mode and emit an ultrashort spontaneous emission pulse into it. By playing with switching parameters and with the emission frequency of the QDs, selected by spectral filtering, pulse durations ranging from 300 ps down to 6 ps have been obtained. These pulses display a very small coherence length, which opens potential applications in the field of ultrafast imaging. The control of QD-mode coupling on ps-time scales establishes also cavity switching as a key resource for quantum photonics., Comment: 11 pages, 8 figures; includes supplemental material

In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations.

Coupling a microscopic mechanical resonator to a nano-scale quantum system enables control of the mechanical resonator via the quantum system, and vice versa. The coupling is usually achieved through functionalization of the mechanical resonator but this results in additional mass and dissipation channels. An alternative is an intrinsic coupling based on strain. We employ here a monolithic semiconductor system. The nano-scale quantum system is a quantum dot; the mechanical resonator a microscopic trumpet which simultaneously optimizes the mechanical and photonic properties. The quantum dot transition is driven resonantly. Via the resonance fluorescence, we observe mechanical Brownian motion even at 4K, and demonstrate a coupling to mechanical modes of different types. We identify a mechanical mode with a cooperativity larger than one. We show analytically that the Heisenberg limit on displacement measurement can be reached with an embedded two-level system in the case of a transform-limited optical emitter with perfect photon detection. We argue that operation close to the Heisenberg limit is achievable with state-of-the-art quantum dot devices.

In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 micrometers. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (> 99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.

We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental tensile strain along their growth axis. In contrast to recent studies conducted on similar QDs stressed perpendicularly to their growth axis, optical spectroscopy reveals 5-10 times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimise QD response to applied strain, with implications both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single photon sources or hybrid QD opto-mechanical systems.

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $\lambda-$layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth.

We present the experimental realization of a quantum fiber-pigtail. The device consists of a semiconductor quantum-dot embedded into a conical photonic wire that is directly connected to the core of a fiber-pigtail. We demonstrate a photon collection efficiency at the output of the fiber of 5.8% and suggest realistic improvements for the implementation of a useful device in the context of quantum information. We finally discuss potential applications in scanning probe microscopy.

We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal that an unconventional regime of high indistinguishability can be reached for moderate emittercavity coupling strengths and high quality factor cavities. In this regime, the broad spectrum of a dissipative quantum system is funneled into the narrow lineshape of a cavity. The associated efficiency is found to greatly surpass spectral filtering effects. Our findings open the path towards on-chip scalable indistinguishable-photon emitting devices operating at room temperature., Comment: Main paper (6 pages, 3 figures)+ supplemental materials (4 pages)

Ever since the advent of nonlinear optics, the generation of light by frequency-conversion is drawing continued attention, and leading to emerging applications such as supercontinuum sources for ultra stable clocks and advanced microscopy. A modern approach to frequency-conversion is to switch light confined in micro- and nanocavity resonances to enable on-chip operation. Supposedly, nonlinear frequency conversion in such confined media differs from traditional non-linear optics in three key features regarding output spectrum, frequency shift, and critical time scale. Therefore, we switch GaAs-AlAs microcavities by the electronic Kerr effect, and study a range of quality factors to bridge the confined and the traditional non-linear regimes. We uncover the key role of the density of vacuum fluctuations, i.e., the local density of optical states (LDOS) for newly generated frequencies, a concept inspired by cavity quantum electrodynamics (cQED). As a result, we succeed to establish a framework, which not only describes nonlinear optics both in traditional bulk and in confined media but also opens a new control dimension in changing the color of light., Comment: 7 double column pages, 5 figures

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls., Comment: 4 pages, 3 figures

Recent progress in nanotechnology has allowed to fabricate new hybrid systems where a single two-level system is coupled to a mechanical nanoresonator. In such systems the quantum nature of a macroscopic degree of freedom can be revealed and manipulated. This opens up appealing perspectives for quantum information technologies, and for the exploration of quantum-classical boundary. Here we present the experimental realization of a monolithic solid-state hybrid system governed by material strain: a quantum dot is embedded within a nanowire featuring discrete mechanical resonances corresponding to flexural vibration modes. Mechanical vibrations result in a time-varying strain field that modulates the quantum dot transition energy. This approach simultaneously offers a large light extraction efficiency and a large exciton-phonon coupling strength $g_0$. By means of optical and mechanical spectroscopy, we find that $g_0/2\pi$ is nearly as large as the mechanical frequency, a criterion which defines the ultra-strong coupling regime., Comment: 6 pages, 3 figures

We have theoretically studied the effect of deterministic temporal control of spontaneous emission in a dynamic optical microcavity. We propose a new paradigm in light emission: we envision an ensemble of two-level emitters in an environment where the local density of optical states is modified on a time scale shorter than the decay time. A rate equation model is developed for the excited state population of two-level emitters in a time-dependent environment in the weak coupling regime in quantum electrodynamics. As a realistic experimental system, we consider emitters in a semiconductor microcavity that is switched by free-carrier excitation. We demonstrate that a short temporal increase of the radiative decay rate depletes the excited state and drastically increases the emission intensity during the switch time. The resulting time-dependent spontaneous emission shows a distribution of photon arrival times that strongly deviates from the usual exponential decay: A deterministic burst of photons is spontaneously emitted during the switch event., Comment: 12 pages, 4 figures

We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We exploit the virtually instantaneous electronic Kerr effect to repeatedly and reproducibly switch a GaAs-AlAs planar microcavity. We achieve repetition times as fast as 300 fs, thereby breaking the THz modulation barrier. The rate of the switching in our experiments is only determined by optics and not by material related relaxation. Our results offer novel opportunities for fundamental studies of cavity-QED and optical information processing in sub-picosecond time scale., Comment: 4 pages, 3 figures

We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the adiabatic expansion of this mode within a conical taper. Numerical simulations highlight the outstanding performance and robustness of this concept. As a first application in the field of quantum optics, we report the realisation of an ultra-bright single-photon source. The device, a GaAs photonic trumpet containing few InAs quantum dots, demonstrates a first-lens external efficiency of $0.75 \pm 0.1$.

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface charge and hence the electric field seen by the quantum dot. The influence of temperature and excitation laser power on this phenomenon is studied. Most importantly, we demonstrate a proper treatment of the nanowire surface to suppress the drift.

We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by the cavity storage time of ?tcav = 0.3ps and not by intrinsic material parameters. Our results pave the way to supra-THz switching rates for on-chip data modulation and real-time cavity quantum electrodynamics., Comment: 3 pages, 3 figures

We have performed white-light reflectivity measurements on GaAs/AlAs micropillar cavities with diameters ranging from 1 {\mu}m up to 20 {\mu}m. We are able to resolve the spatial field distribution of each cavity mode in real space by scanning a small-sized beam across the top facet of each micropillar. We spectrally resolve distinct transverse optical cavity modes in reflectivity. Using this procedure we can selectively address a single mode in the multimode micropillar cavity. Calculations for the coupling efficiency of a small-diameter beam to each mode are in very good agreement with our reflectivity measurements., Comment: 7 pages, 8 figures

We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to crucial parameters that control future applications., Comment: Discussed effect of probe bandwidth. Included functional forms of n(z) and R(z)

We have measured time-resolved the photon storage time and the quality factor of an ultrafast photonic cavity using an autocorrelator. The cavity consists of a $\lambda$-thick GaAs layer sandwiched between GaAs/AlAs distributed Bragg reflectors and resonates at 985 nm wavelength. The inverse relative linewidth measured with white light reflectivity is 830, while the quality factor obtained from the time resolved measurements is 1500. The photon storage time in the cavity is 0.78 ps. We show that the difference between the quality factor and the inverse relative linewidth results from inhomogeneous broadening of the microcavity resonance due to a spatial gradient in the cavity layer., Comment: 5 figures

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any given induced carrier density, if the modulation depth is to be maximized., Comment: 1.) improved introduction 2.) superior modelling, better agreement with data

It is usually assumed that when performing a photoluminescence experiment on a microcavity containing an inhomogeneously broadened quantum dots ensemble, the cavity mode appears as a positive peak with a linewidth that reflects the mode quality factor Q. We show in this article that this conclusion is in general not true, and that the measured mode linewidth depends strongly on the excitation power for microcavities having large Purcell factors. We analyze theoretically this effect in the case of the micropillar cavity and we show that the same microcavity can give rise to a large variety of photoluminescence spectral signatures depending on the excitation power and collection set-up. We finally give guidelines to measure the real cavity quality factor by photoluminescence., Comment: 15 pages, 5 figures

We have computed the spectrum emitted spontaneously by a quantum dot coupled to an arbitrarily detuned single mode cavity, taking into account pure dephasing processes. We show that if the emitter is incoherent, the cavity can efficiently emit photons with its own spectral characteristics. This effect opens unique opportunities for the development of devices exploiting both cavity quantum electrodynamics effects and pure dephasing, such as wavelength stabilized single photon sources robust against spectral diffusion., Comment: 5 pages, 3 figures

We performed non-degenerate pump-probe experiments on a GaAs/AlAs photonic structure. We switched the photonic properties using the optical Kerr effect and free carriers excited by three photon absorption. From these measurements we extracted the non-degenerate Kerr coefficients over a broad wavelength range and we extracted the three photon absorption coefficient for GaAs at three wavelengths in the near infrared. We show that the optical Kerr effect is large enough to switch a cavity resonance with a high \emph{Q} ($Q>1000$) photonic cavity., Comment: 18 pages, 8 figures pdf format

In this paper we consider an initially excited two-level system coupled to a monomode cavity, and compute exact expressions for the spectra spontaneously emitted by each system in the general case where they have arbitrary linewidths and frequencies. Our method is based on the fact that this problem has an easily solvable classical counterpart, which provides a clear interpretation of the evidenced phenomena. We show that if the cavity linewidth is much lower than the atomic linewidth, photons are emitted at the cavity frequency, even if the atom and the cavity are strongly detuned. We also study the links between the spontaneous emission spectra and the fluorescence spectra emitted when the atom is driven by a classical field of tunable frequency., Comment: 21 pages, 5 figures

The authors study the ultrafast switching-on and -off of planar GaAs/AlAs microcavities. Up to 0.8% refractive index changes are achieved by optically exciting free carriers at 1720 nm and a pulse energy of 1.8 micro Joules. The cavity resonance is dynamically tracked by measuring reflectivity versus time delay with tunable laser pulses, and is found to shift by as much as 3.3 linewidths within a few picoseconds. The switching-off occurs with a decay time of around 50 ps. The authors derive the dynamic behavior of the carrier density and of the complex refractive index. They propose that the inferred 10 GHz switching rate may be tenfold improved by optimized sample growth., Comment: 1.) Replaced figure 1 (linear reflectivity) with a more recent and improved measurement 2.) Included a Figure of Merit for switching and compared to other recent contributions 3.) Explained more precisely the effect of embedded Quantum Dots (namely no effect on measurement) 4.) Changed wording in a few places

A 3D biomechanical dynamical model of human tongue is presented, which is elaborated to test in the future hypotheses about speech motor control. Tissue elastic properties are accounted for in Finite Element Modelling (FEM). The FEM mesh was designed in order to facilitate implementation of muscle arrangement in the tongue. Therefore, its structure was determined on the basis of accurate anatomical data. Mechanically, the hypothesis of hyperelasticity was adopted. Muscles are modelled as general force generators that act on anatomically specified sets of nodes of the FEM structure. Simulations, using ANSYS software, of the influence of muscle activations onto the tongue shape are presented.

A two-level system that is coupled to a high-finesse cavity in the Purcell regime exhibits a giant optical non-linearity due to the saturation of the two-level system at very low intensities, of the order of one photon per lifetime. We perform a detailed analysis of this effect, taking into account the most important practical imperfections. Our conclusion is that an experimental demonstration of the giant non-linearity should be feasible using semiconductor micropillar cavities containing a single quantum dot in resonance with the cavity mode., Comment: 40 pages, 16 figures, accepted in Phys. Rev. A

Motional narrowing refers to the striking phenomenon where the resonance line of a system coupled to a reservoir becomes narrower when increasing the reservoir fluctuation. A textbook example is found in nuclear magnetic resonance, where the fluctuating local magnetic fields created by randomly oriented nuclear spins are averaged when the motion of the nuclei is thermally activated. The existence of a motional narrowing effect in the optical response of semiconductor quantum dots remains so far unexplored. This effect may be important in this instance since the decoherence dynamics is a central issue for the implementation of quantum information processing based on quantum dots. Here we report on the experimental evidence of motional narrowing in the optical spectrum of a semiconductor quantum dot broadened by the spectral diffusion phenomenon. Surprisingly, motional narrowing is achieved when decreasing incident power or temperature, in contrast with the standard phenomenology observed for nuclear magnetic resonance.

Single electron spins in quantum dots are attractive for quantum communication because of their expected long coherence times. We propose a method to create entanglement between two remote spins based on the coincident detection of two photons emitted by the dots. Local nodes of several qubits can be realized using the dipole-dipole interaction between trions in neighboring dots and spectral addressing, allowing the realization of quantum repeater protocols. We have performed a detailed feasibility study of our proposal based on tight-binding calculations of quantum dot properties., Comment: 4 pages, 2 figures, new and improved version, explicit performance estimates

A 3D biomechanical dynamical model of human tongue is presented, that is elaborated in the aim to test hypotheses about speech motor control. Tissue elastic properties are accounted for in Finite Element Modeling (FEM). The FEM mesh was designed in order to facilitate the implementation of muscle arrangement within the tongue. Therefore, its structure was determined on the basis of accurate anatomical data about the tongue. Mechanically, the hypothesis of hyperelasticity was adopted with the Mooney-Rivlin formulation of the strain energy function. Muscles are modeled as general force generators that act on anatomically specified sets of nodes of the FEM structure. The 8 muscles that are known to be largely involved in the production of basic speech movements are modeled. The model and the solving of the Lagrangian equations of movement are implemented using the ANSYSTM software. Simulations of the influence of muscle activations onto the tongue shape are presented and analyzed.

We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots coupled to the evanescent wave of the high-$Q$ whispering gallery modes of a silica microsphere. In spite of high temperature and $Q$-spoiling of whispering gallery modes due to diffusion and refraction on the high index semiconductor sample, room temperature lasing is obtained with less than 100 quantum dots. This result highlights the feasibility and interest of combining self-assembled quantum dots and microspheres in view of cavity-quantum electrodynamics experiments., Comment: To be published in Optics Express

We report on the observation of the strong coupling regime between a single GaAs quantum dot and a microdisk optical mode. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical mode. At resonance, we observe an anticrossing, signature of the strong coupling regime with a well resolved doublet. The Vacuum Rabi splitting amounts to 400 μeV and is twice as large as the individual linewidths., Comment: submitted on November 7th 2004

We discuss the efficiency of single photon sources based on a single quasi-monochromatic emitter (such as a semiconductor quantum dot) inserted in a pillar microcavity. We show that their efficiency, which is in principle excellent thanks to the Purcell effect, can be drastically limited by extrinsic cavity losses, such as those related to the scattering by the sidewalls roughness. We present novel design rules for micropillars in view of this application and show that for the well-mastered GaAs/AlAs system more than 70% of the emission can be concentrated into the collimated emission beam associated with the fundamental cavity mode., Comment: 15 pages, 3 figures