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The element boron has long been central to two-dimensional superconducting materials, and numerous studies have demonstrated the presence of superconductivity in various boron-based structures. Recent work introduced a new variant: Bilayer Kagome borophene, characterized by its bilayer Kagome lattice with van Hove singularity. Using first-principles calculations, our research investigates the unique electronic structure and superconducting properties of Bilayer Kagome borophene (BK-borophene) through first-principles calculations. BK-borophene is identified as a single-gap superconductor with an initial superconducting transition temperature (Tc) of 11.0 K. By strategically doping the material to align its Fermi level with the Van Hove singularity, Tc is significantly enhanced to 30.0 K. The results contribute to the existing understanding of BK-borophene, highlighting its potential as a member of the expanding family of two-dimensional superconducting materials., Comment: 12 pages, 6 figures

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles calculations based on Boltzmann transport theory. The results show that SnP, SnAs, and PbAs all exhibit indirect band gaps, whereas PbP is the only semiconductor with a direct band gap. One important finding is that intravalley scattering has a significant impact on electron-phonon coupling. Interestingly, changes in carrier concentration do not affect the electron mobility within these MX monolayers, with SnP exhibiting the highest electron mobility among them. Subsequently, the SnP under a 6% biaxial strain is further explored and the results demonstrated a considerable increase in electron mobility to 2,511.9 cm^2/Vs, which is attributable to decreased scattering. This suggests that MX monolayers, especially SnP, are promising options for 2D semiconductor materials in the future.

In the present work, the three stable MXenes M n+1 C n O 2 (M=Nb,Ta) are explored based onfirst-principles calculations. These materials are important derivatives of 2D materials and exhib-it distinctive properties, holding vast potential in nanodevices. All these M n+1 C n O 2 (M=Nb,Ta)materials exhibit outstanding superconducting performance, with corresponding superconductingtransition temperatures of 23.00K, 25.00K, and 29.00K. Analysis reveals that the high supercon-ducting transition temperatures of MXenes M n+1 C n O 2 (M=Nb,Ta) are closely associated with thehigh value of the logarithmic average of phonon frequencies, {\omega} log , and the strong electron-phononcoupling (EPC), attributed to the crucial contribution of low-frequency phonons. Additionally, weapplied strain treatments of 2% and 4% to M n+1 C n O 2 (M=Nb,Ta), resulting in varying changes insuperconducting transition temperatures under different strains.

The discovery of superconductivity in CaC6 with a critical temperature (Tc) of 11.5 K reignites much interest in exploring high-temperature superconductivity in graphite intercalation compounds (GICs). Here we identify a GIC NaC4, discovered by ab initio evolutionary structure search, as a superconductor with a computed Tc of 41.2 K at 5 GPa. This value is eight times higher than that of the synthesized GIC NaC2 and possesses the highest Tc among available GICs. The remarkable superconductivity of GIC NaC4 mainly arises from the coupling of {\pi} electrons in graphene with the low-frequency vibrations involving both Na and C atoms. These findings suggest that Na-GICs may hold great promise as high-Tc superconductors., Comment: 4 figures

In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom of monolayer GaN and form a buckling structure with a magnetic moment of 1 $\mu_B$ per dopant. The N-rich growth conditions are more desirable for such a substitution process than the Ga-rich grow conditions. With a large diffusion barrier vertical to the monolayer GaN, both Ge and Sn atoms tend to stay on the same side of monolayer GaN with an antiferromagnetic coupling between them. When intrinsic vacancies exist in monolayer GaN, the magnetic moments of group-IV dopants vanish due to the charge transferring from the dopants to Ga or N vacancies. The precondition creation of Ga vacancies, a plentiful supply of Ge or Sn dopants, and the N-rich conditions can be adopted to maintain the magnetic properties of group-IV-doped monolayer GaN. These theoretical results help to promote the applications of 2D GaN-based materials in spintronics.

Janus materials possess extraordinary physical, chemical, and mechanical properties caused by symmetry breaking. Here, the mechanic properties, electronic structure, magnetic properties, and optical properties of Janus Cr$_2$TeX (X= P, As, Sb) monolayers are systematically investigated by the density functional theory. Janus Cr$_2$TeP, Cr$_2$TeAs, and Cr$_2$TeSb are intrinsic ferromagnetic (FM) half-metals with wide spin gaps and half-metallic gaps. Monte Carlo simulations based on the Heisenberg model estimate the Curie temperature (\emph{T}$_c$) of these monolayers are about 583, 608, and 597 K, respectively. Additionally, it is found that Cr$_2$TeX (X= P, As, Sb) monolayers still exhibit FM half-metallic properties under biaxial strain from -6% to 6%. At last, the Cr$_2$TeP monolayer has a higher absorption coefficient than the Cr$_2$TeAs and Cr$_2$TeSb monolayers in the visible region. The results predict that Janus Cr$_2$TeX (X= P, As, Sb) monolayers with novel properties have good potential for applications in future nanodevices., Comment: 14 pages, 5 figures

Two-dimensional (2D) XY magnets with easy magnetization planes support the nontrivial topological spin textures whose dissipationless transport is highly desirable for 2D spintronic devices. Here, we predicted that Janus monolayer V$_{2}$XN (X = P, As) with a square lattice are 2D-XY ferromagnets by first-principles calculations. Both the magnetocrystalline anisotropy and magnetic shape anisotropy favor an in-plane magnetization, leading to an easy magnetization $xy$-plane in Janus monolayer V$_{2}$XN. Resting on the Monte Carlo simulations, we observed the Berezinskii-Kosterlitz-Thouless (BKT) phase transition in monolayer V$_{2}$XN with transition temperature $T_{\rm BKT}$ being above the room temperature. Especially, monolayer V$_{2}$AsN has a magnetic anisotropy energy (MAE) of 292.0 $\mu$eV per V atom and a $T_{\rm BKT}$ of 434 K, which is larger than that of monolayer V$_{2}$PN. Moreover, a tensile strain of 5\% can further improve the $T_{\rm BKT}$ of monolayer V$_{2}$XN to be above 500 K. Our results indicated that Janus monolayer V$_{2}$XN (X = P, As) were candidate materials to realize high-temperature 2D-XY ferromagnetism for spintronics applications., Comment: 18 pages, 7 figures

The electronic and topological properties of single-layer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) materials have been studied with the aid of first principles calculations. This kind of materials belong to topological semimetals (TMs) with abundant nodal lines and nodes. Considering their similar properties, we focus on the analysis of Ta3SnTe6 and Ta3SiSe6. The present of spin-orbit coupling (SOC) leads to the transition from type-I nodal lines to Dirac points as well as the disappear of type-II Dirac points. The three-dimensional (3D) band diagrams reproduce vividly the characteristics of nodes and nodal lines. The appearance of the flat bands in (110) edge states further confirm their nontrivial topological properties. We also explore the relationship among different nodal lines (nodes), crystal symmetry and SOC. The type-I nodal lines are protected by Mz and My symmetry in the absent of SOC. Symmetry breaking leads to band splitting even in the presence of SOC. The single-layer X3YZ6 can be used as candidates for two-dimensional (2D) TMs and provide a platform for further study of interesting physical phenomena., Comment: 14 pages, 7 figures and Supporting Materials

Two-dimensional intrinsic antiferromagnetic semiconductors are expected to stand out in the spintronic field. The present work finds the monolayer T'-MoTeI is intrinsically an antiferromagnetic semiconductor by using first-principles calculation. Firstly, the dimerized distortion of the Mo atoms causes T'-MoTeI to have dynamic stability, which is different from the small imaginary frequency in the phonon spectrum of T-MoTeI. Secondly, T'-MoTeI is an indirect-bandgap semiconductor with 1.35 eV. Finally, in the systematic study of strain effects, there are significant changes in the electronic structure as well as the bandgap, but the antiferromagnetic ground state is not affected. Monte Carlo simulations predict that the Neel temperature of T'-MoTeI is 95 K. The results suggest that the monolayer T'-MoTeI can be a potential candidate for spintronics applications., Comment: 6 pages, 7 figures

Both boron nitride (BN) and carbon (C) have sp, sp2 and sp3 hybridization modes, and thus resulting in a variety of BN and C polymorphs with similar structures, such as hexagonal BN (hBN) and graphite, cubic BN (cBN) and diamond. Here, five types of BN polymorph structures were proposed theoretically, inspired by the graphite-diamond hybrid structures discovered in recent experiment. These BN polymorphs with graphite-diamond hybrid structures possessed excellent mechanical properties with combined high hardness and high ductility, and also exhibited various electronic properties such as semi-conductivity, semi-metallicity, and even one- and two-dimensional conductivity, differing from known insulators hBN and cBN. The simulated diffraction patterns of these BN hybrid structures could account for the unsolved diffraction patterns of intermediate products composed of "compressed hBN" and diamond-like BN, caused by phase transitions in previous experiments. Thus, this work provides a theoretical basis for the presence of these types of hybrid materials during phase transitions between graphite-like and diamond-like BN polymorphs.

Search for new high-temperature superconductors and insight into their superconducting mechanism are of fundamental importance in condensed matter physics. The discovery of near-room temperature superconductivity at more than a million atmospheres ushers in a new era for superconductors. However, the critical task of identifying materials with comparable superconductivity at near or ambient pressure remains. Carbon materials can always lead to intriguing surprises due to their structural diversity and electronic adjustability. Insulating diamond upon doping or external stimuli has achieved superconducting state. Thus, it still has a great opportunity to find superconducting ones with higher transition temperature (Tc). Here, we report an intrinsic superconducting graphite-diamond hybrid through first-principles calculations, whose atomic-resolution structural characteristics have been experimentally determined recently. The predicted Tc is approximated at 39 K at ambient pressure, and strain energizing can further boost Tc to 42 K. The strong electron-phonon coupling associated with the out-of-plane vibration of carbon atoms at the junction plays a dominant role in the superconducting transition. Our work demonstrates the great potential of such carbon materials as high-Tc superconductors, which will definitely attract extensive research., Comment: 11 pages, 3 figures

Two-dimensional (2D) intrinsic magnetic materials with high Curie temperature (Tc) coexisting with 100% spin-polarization are highly desirable for realizing promising spintronic devices. In the present work, the intrinsic magnetism of monolayer square CrBr2 is predicted by using first-principles calculations. The monolayer CrBr2 is an intrinsic ferromagnetic (FM) half-metal with the half-metallic gap of 1.58 eV. Monte Carlo simulations based on the Heisenberg model estimates Tc as 212 K. Furthermore, the large compressive strain makes CrBr2 undergo ferromagnetic-antiferromagnetic phase transition, when the biaxial tensile strain larger than 9.3% leads to the emergence of semiconducting electronic structures. Our results show that the intrinsic half-metal with a high Tc and controllable magnetic properties endow monolayer square CrBr2 a potential material for spintronic applications., Comment: 5 pages, 5 figures

Based on first-principles calculations, we have found a family of 2D transition-metal (TM) chalcogenides MX5 (M = Zr, Hf and X = S, Se and Te) can host quantum spin Hall (QSH) effect. The molecular dynamics simulation indicate that they are all thermal-dynamically stable at room temperature, the largest band gap is 0.19 eV. We have investigated MX5's electronic properties and found their properties are very similar. The single-layer ZrX5 are all gapless semimetals without consideration of spin-orbit coupling (SOC). The consideration of SOC will result in insulating phases with band gaps of 0.05 eV (direct), 0.18 eV (direct) and 0.13 eV (indirect) for ZrS5, ZrSe5 to ZrTe5, respectively. The evolution of Wannier charge centers and edge states confirm they are all QSH insulators. The mechanisms for QSH effect in ZrX5 originate from the special nonsymmorphic space group features. In addition, the QSH state of ZrS5 survives at a large range of strain as long as the interchain coupling is not strong enough to reverse the band ordering. The single-layer ZrS5 will occur a topological insulator (TI)-to-semimetal (metal) or metal-to-semimetal transition under certain strain. Monolayer MX5 expand the TI materials based on TM chalcogenides and may open up a new way to fabricate novel low power spintronic devices at room temperature., Comment: 13 pages,7 figures

Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTe$_4$Se. The band structure of bulk ZrTe$_4$Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7\% tensile strain. Meanwhile, the Z$_2$ invariants (0; 110) demonstrate conclusively it is a weak topological insulator (WTI). The two Dirac cones for the (001) surface further confirm the nontrivial topological nature. The single-layer ZrTe$_4$Se is a quantum spin Hall (QSH) insulator with a band gap 86.4 meV and Z$_2$=1, the nontrivial metallic edge states further confirm the nontrivial topological nature. The maximum global band gap is 0.211 eV at the tensile strain 8\%. When the compressive strain is more than 1\%, the band structure of single-layer ZrTe$_4$Se produces a TI-to-semimetal transition. These theoretical analysis may provide a method for searching large band gap TIs and platform for topological nanoelectronic device applications., Comment: 13 pages,8 figures

Recent theoretical and experimental studies of hydrogen-rich materials at megabar pressures (i.e., >100 GPa) have led to the discovery of very high-temperature superconductivity in these materials. Lanthanum superhydride LaH$_{10}$ has been of particular focus as the first material to exhibit a superconducting critical temperature (T$_c$) near room temperature. Experiments indicate that the use of ammonia borane as the hydrogen source can increase the conductivity onset temperatures of lanthanum superhydride to as high as 290 K. Here we examine the doping effects of B and N atoms on the superconductivity of LaH$_{10}$ in its fcc (Fm-3m) clathrate structure at megabar pressures. Doping at H atomic positions strengthens the H$_{32}$ cages of the structure to give higher phonon frequencies that enhance the Debye frequency and thus the calculated T$_c$. The predicted T$_c$ can reach 288 K in LaH$_{9.985}$N$_{0.015}$ within the average high-symmetry structure at 240 GPa., Comment: 10 pages, 4 figures

Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI$_3$ to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI$_3$ onto monolayer CrI$_3$ with a middle-layer I atoms discarded to construct monolayer V$_2$Cr$_2$I$_9$. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature $\sim$ 6 (4) times higher than monolayer CrI$_3$ and VI$_3$. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 $\mu$eV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide V$_2$Cr$_2$I$_9$ monolayer would support potential opportunities for spintronic devices., Comment: 7 pages and 6 figures

In this paper, we systematically investigated the structural and magnetic properties of CrTe by combining particle swarm optimization algorithm and first-principles calculations. With the electronic correlation effect considered, we predicted the ground-state structure of CrTe to be NiAs-type (space group P63/mmc) structure at ambient pressure, consistent with the experimental observation. Moreover, we found two extra meta-stable Cmca and R3m structure which have negative formation enthalpy and stable phonon dispersion at ambient pressure. The Cmca structure is a layered antiferromagnetic metal. The cleaved energy of a single layer is 0.464 J/m2, indicating the possible synthesis of CrTe monolayer. R3m structure is a ferromagnetic half-metal. When the pressure was applied, the ground-state structure of CrTe transitioned from P63/mmc to R3m, then to Fm3m structure at a pressure about 34 and 42 GPa, respectively. We thought these results help to motivate experimental studies the CrTe compounds in the application of spintronics., Comment: 5 pages, 5 figures

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H$_3$S$_{0.962}$C$_{0.038}$ at 260 GPa and H$_3$S$_{0.960}$Si$_{0.040}$ at 230 GPa. The former may provide an explanation for the recent experimental observation of room-temperature superconductivity in a highly compressed C-S-H system [Nature 586, 373-377 (2020)]. Our work opens a new avenue for substantially raising the critical temperatures of hydrogen-rich materials., Comment: 5 pages, 2 figures

In recent years, intrinsic two-dimensional (2D) magnetism aroused great interest because of its potential application in spintronic devices. However, low Curie temperature (\emph{T}$_c$) and magnetic anisotropy energy (MAE) limit its application prospects. Here, using first-principles calculations based on density-functional theory (DFT), we predicted a series of stable MnXSe$_4$ (X=As, Sb) single-layer. The MAE of single-layer MnAsSe$_4$ and MnSbSe$_4$ was 648.76 and 808.95 ${\mu}$eV per Mn atom, respectively. Monte Carlo (MC) simulations suggested the \emph{T}$_c$ of single-layer MnAsSe$_4$ and MnSbSe$_4$ was 174 and 250 K, respectively. The energy band calculation with hybrid Heyd-Scuseria-Ernzerhof (HSE06) function indicated the MnXSe$_4$ (X = As, Sb) were ferromagnetic (FM) half-metallic. Also it had 100\% spin-polarization ratio at the Fermi level. For MnAsSe$_4$ and MnSbSe$_4$, the spin-gap were 1.59 and 1.48 eV, respectively. These excellent magnetic properties render MnXSe$_4$ (X = As, Sb) promising candidate materials for 2D spintronic applications., Comment: 9 pages, 5 figures

Two-dimensional ultrawide bandgap materials, with bandgaps significantly wider than 3.4 eV, have compelling potential advantages in nano high-power semiconductor, deep-ultraviolet optoelectronics, and so on. Recently, two-dimensional layered h-BeO has been synthesized in the experiments. In the present work, the first-principles calculations predict that monolayer h-BeO has an indirect bandgap of 7.05 eV with the HSE functional. The ultrawide bandgap results from the two atomic electronegativity difference in the polar h-BeO. And the electronic transport properties are also systematically investigated by using the Boltzmann transport theory. The polar LO phonons of h-BeO can generate the macroscopic polarization field and strongly couple to electrons by the Frohlich interaction. Limited by the electron-phonon scattering, monolayer h-BeO has a high mobility of 473 cm^2/Vs at room temperature. Further studies indicate that the biaxial tensile strain can reduce the electronic effective mass and enhance the electron-phonon coupling strength. The suitable strain can promote the mobility to ~1000 cm^2/Vs at room temperature., Comment: 5 pages, 4 figures

Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics., Comment: 19 pages, 5 figures

Two-dimensional (2D) intrinsic half-metallic materials are of great interest to explore the exciting physics and applications of nanoscale spintronic devices, but no such materials have been experimentally realized. Using first-principles calculations based on density-functional theory (DFT), we predicted that single-layer MnAsS$_4$ was a 2D intrinsic ferromagnetic (FM) half-metal. The half-metallic spin gap for single-layer MnAsS$_4$ is about 1.46 eV, and it has a large spin splitting of about 0.49 eV in the conduction band. Monte Carlo simulations predicted the Curie temperature (\emph{T}$_c$) was about 740 K. Moreover, Within the biaxial strain ranging from -5\% to 5\%, the FM half-metallic properties remain unchanged. Its ground-state with 100\% spin-polarization ratio at Fermi level may be a promising candidate material for 2D spintronic applications., Comment: 12 pages, 6 figures

In this paper, the structural, electronic and magnetic properties of Zinc-blende Ga1-xVxSb compounds, with x from dilute doping situation to extreme doping limiting, were systematically investigated by first-principles calculations. V atoms prefer to substitute the Ga atoms and the formation energy is lower in Sb-rich than Ga-rich growth condition. Meantime, the SbGa antisite defects can effectively decrease the energy barrier of substitution process, from 0.85 eV to 0.53 eV. The diffusion of V atom in GaSb lattice is through meta-stable interstitial sites with an energy barrier of 0.6 eV. At a low V concentration x = 0.0625, V atoms prefer a homogeneous distribution and an antiferromagnetic coupling among them. However, starting from x = 0.5, the magnetic coupling among V atoms changes to be ferromagnetic, due to enhanced superexchange interaction between eg and t2g states of neighbouring V atoms. At the extreme limiting of x = 1.00, we found that Zinc-blende VSb as well as its analogs VAs and VP are intrinsic ferromagneitc semiconductors, with a large change of light absorption at the curie temperature. These results indicate that Ga1-xVxSb compounds can provide a platform to design the new electronic, spintronic and optoelectronic devices., Comment: 5 pages, 5 figures

We systematically investigated the modulation of heat transport of experimentally accessible two-dimensional (2D) group-III chalcogenides by firstprinciples calculations. It was found that intrinsic thermal conductivity (kappa) of chalcogenides MX (M = Ga, In; X = S, Se) were desirable for efficient heat dissipation. Meanwhile, we showed that the long-range anharmonic interactions played an important role in heat transport of the chalcogenides. The difference of kappa among the 2D group-III chalcogenides can be well described by the Slack model and can be mainly attributed to phonon group velocity. Based on that, we proposed three methods including strain engineering, size effect and making Janus structures to effectively modulate the kappa of 2D group-III chalcogenides, with different underlying mechanisms. We found that tensile strain and rough boundary scattering could continuously decrease the kappa while compressive strain could increase the kappa of 2D group-III chalcogenides. On the other side, the change of kappa by producing Janus structures is permanent and dependent on the structural details. These results provide guilds to modulate heat transport properties of 2D group-III chalcogenides for devices application, Comment: 13 pages, 5 figures

Despite the exceeding 23\% photovoltaic efficiency achieved in organic-inorganic hybrid perovskite solar cells obtaining, the stable materials with desirable band gap are rare and are highly desired. With the aid of first-principles calculations, we predict a new promising family of nontoxic inorganic double perovskites (DPs), namely, silicon (Si)-based halides A$_{2}$SiI$_{6}$ (A = K, Rb, Cs; X = Cl, Br, I). This family containing the earth-abundant Si could be applied for perovskite solar cells (PSCs). Particularly A$_{2}$SiI$_{6}$ exhibits superb physical traits, including suitable band gaps of 0.84-1.15 eV, dispersive lower conduction bands, small carrier effective masses, wide photon absorption in the visible range. Importantly, the good stability at high temperature renders them as promising optical absorbers for solar cells., Comment: 17 pages, 6 figures

The experimental studies about monolayer transition metal dichalcogenides in the recent year reveal this kind of compounds have many metastable phases with unique physical properties, not just 1H phases. Here, we focus on the 1T'' phase and systematically investigate the electronic structures and transport properties of MX2 (M=Mo, W; X=S, Se, Te) using the first-principles calculations with Boltzmann transport theory. And among them, only three molybdenum compounds has small direct bandgap at K point, which derive from the distortion of octahedral-coordination [MoS6]. For these three cases, hole carrier mobility of MoSe2 is estimated as 690 cm^2/Vs at room temperature, far more high than that of other two MoX2. For the reason, the combination of the modest carrier effective mass and weak electron-phonon coupling lead to the outstanding transport performance of MoSe2. The Seebeck coefficient of MoSe2 is also evaluated as high as 300 10^-6 V/K at room temperature. Due to the temperature dependent mobility of T^-1.9 and higher Seebeck coefficient at low temperature, it is found that MoSe2 has a large thermoelectric power factor around 6 10^-3 W/mK^2 in the low to intermediate temperature range. The present results suggests 1T'' MoSe2 maybe a excellent candidate for thermoelectric material., Comment: 9 pages, 6 figures

The effect of strain on the magnetic order and band structure of single-layer CrAsS$_4$ has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS$_4$ was an antiferromagnetic (AFM) semiconductor, and would have a phase transition from AFM state to ferromagnetic (FM) state by applying a uniaxial tensile strain of 2.99\% along the y-direction or compressive strain of 1.76\% along the x-direction. The underlying physical mechanism of strain-dependent magnetic stability was further elucidated as the result of the competition between the direct exchange and indirect superexchange interactions. Moreover, band gap exhibit a abrupt change along with phase transition of magnetic order. Our study provides an intuitional approach to design strain-modulated spintronic devices., Comment: 7 pages, 6 figures

Recently, two-dimensional ferromagnetic semiconductors have been an important class of materials for many potential applications in spintronic devices. Based on density functional theory, we systematically explore the magnetic and electronic properties of CrGeS$_3$ with the monolayer structures. The comparison of total energy between different magnetic states ensures the ferromagnetic ground state of monolayer CrGeS$_3$. It is also shown that ferromagnetic and semiconducting properties are exhibited in monolayer CrGeS$_3$ with the magnetic moment of 3 $\mu_{B}$ for each Cr atom, donated mainly by the intense $dp$$\sigma$-hybridization of Cr $e_g$-S $p$. There are the bandgap of 0.70 eV of spin-up state in the monolayer structure when 0.77 eV in spin-down state. The global gap is 0.34 eV (2.21 eV by using HSE06 functional), which originates from bonding $dp\sigma$ hybridized states of Cr $e_g$-S $p$ and unoccupied Cr $t_{2g}$-Ge $p$ hybridization. Besides, we estimate that the monolayer CrGeS$_3$ possesses the Curie temperature of 161 K by mean-field theory., Comment: 8pages, 4figures

We systematically investigated the phonon and electron transport properties of monolayer InSe and its Janus derivatives including monolayer In2SSe and In2SeTe by first-principles calculations. The breaking of mirror symmetry produce a distinguishable A1 peak in the Raman spectra of monolayer In2SSe and In2SeTe. The room-temperature thermal conductivity (\k{appa}) of monolayer InSe, In2SSe and In2SeTe is 44.6, 46.9, and 29.9 W/(m K), respectively. There is a competition effect between atomic mass, phonon group velocity and phonon lifetime. The \k{appa} can be further effectively modulated by sample size for the purpose of thermoelectric applications. Meanwhile, monolayer In2SeTe exhibits a direct band and higher electron mobility than that of monolayer InSe, due to the smaller electron effective mass caused by tensile strain on the Se side. These results indicate that 2D Janus group-III chalcogenides can provide a platform to design the new electronic, optoelectronic and thermoelectric devices., Comment: 7 pages, 5 figures

Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure, magnetic properties, and optical properties of GaSb, which has exhibited half-metallicity, doped with Mn, a 3d transition metal, are calculated using the generalized gradient approximation and Heyd-Scuseria-Ernzerhof (HSE) functional. Ga$_{1-x}$Mn$_x$Sb ($x = 0.25, 0.5, 0.75$) materials exhibit ferromagnetic half-metallic properties and a high Curie temperature, indicating that this series can applied in spintronic devices. Meanwhile, they absorb strongly in the infrared band, suggesting that Ga$_{1-x}$Mn$_{x}$Sb also has potential applications in infrared photoelectric devices., Comment: 14 pages, 6 figures

Recently, boron arsenide (BAs) has been measured high thermal conductivity in the experiments, great encouraging for the low-power photoelectric devices. Therefore, in the present work, we have systematically investigated the direct and indirect optical absorptions of BAs and BSb and the doping effect of congeners by using first-principles calculations. We obtain the absorption onset corresponding to the value of indirect bandgap by considering the phonon-assisted second-order optical absorptions. And the redshift of absorption onset, enhancement and smoothness of optical absorptions spectra are also captured in the temperature-dependent calculations. In order to introduce one-order absorptions into the visible range, the doping effect of congeners on optical absorptions is studied without the assists of phonon. It is found that the decrease of local direct bandgap after doping derives from either the small bandgap in the prototypical III-V semiconductors or CBM locating at R$_c$ point. Thus, doping of congeners can improve the direct optical absorptions in visible range., Comment: 6 pages, 5 figures

MASnI$_3$, an organometallic halide, has great potential in the field of lead-free perovskite solar cells. Ultraviolet photons have been shown to generate deep trapping electronic defects in mesoporous TiO$_2$-based perovskite, affecting its performance and stability. In this study, the structure, electronic properties, and optical properties of the cubic, tetragonal, and hexagonal phases of MASnI$_3$ were studied using first-principles calculations. The results indicate that the hexagonal phase of MASnI$_3$ possesses a larger indirect band gap and larger carrier effective mass along the \emph{c}-axis compared with the cubic and tetragonal phases. These findings were attributed to the enhanced electronic coupling and localization in the hexagonal phase. Moreover, the hexagonal phase exhibited high absorption of ultraviolet photons and high transmission of visible photons, particularly along the \emph{c}-axis. These characteristics demonstrate the potential of hexagonal MASnI$_3$ for application in multijunction perovskite tandem solar cells or as coatings in mesoporous TiO$_2$-based perovskite solar cells to enhance ultraviolet stability and photon utilization., Comment: 7 pages, 4 figures

Tin monoxide is an interesting two-dimensional material because of the rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically investigate the effects of the different layer structures and strains on the electron-phonon coupling and phonon-limited mobility of SnO. The A2u phonon mode in the high frequency region is the main contributor coupling with electron for the different layer structures. And the orbital hybridization of Sn atoms existing only in bilayer structure changes the conduction band edge and decreases the electron-phonon coupling conspicuously, thus the electronic transport performance of bilayer is superior to others. In addition, the compressive strain of -1.0% in monolayer structure makes CBM consist of two valleys at Gamma point and along M-Gamma line, also leads to the intervalley electronic scattering assisted by Eg-1 mode. However, the electron-phonon coupling regional transferring from high frequency (A2u) to low frequency (Eg-1) results in the little significant change of mobility., Comment: 7 pages, 7 figures

Recently the discovery of magnetic order in two-dimensional monolayer chromium trihalides opens the new research field in two-dimensional materials. We use first-principles calculations to systematically examine the doping effect of chalcogen on CrBr3. In the case of S-doping, four stable configurations, Cr2Br5S, Cr2Br4S2-A, Cr2Br4S2-B and Cr2Br3S3-A, are predicted to be ferromagnetic semiconductors. It is found that the new bands appearing in the original bandgap are made up of S-p and Cr-d-egorbits, lead to the obvious reduce of bandgap and the enhanced optical absorption in the visible range. Due to the decrease of valence electron after chalcogen doping, the magnetic moment also decreases with the increase of S atoms, and the character of ferromagnetic semiconductor is always hold in a wide range of strain. The results shown that monolayer CrBr3with chalcogen doping supply a effectual way to control the magnetism and extend the optoelectronic applications., Comment: 7 pages, 10 figures

Motivated by the excellent electronic and optoelectronic properties of two-dimensional (2D) tin oxides, we systematically investigated the thermal conductivity of monolayer SnO and SnO2by the first-principles calculations. The room-temperature thermal conductivity of monolayer SnO and SnO2reaches 9.6 W/(mK) and 98.8 W/(mK), respectively. The size effect is much weaker for monolayer SnO than for monolayer SnO2, due to the coexistence of size dependent and independent component in the thermal conductivity of monolayer SnO. The large difference between the thermal conductivity of 2D tin oxides can be attributed to the small phonon group velocity and strong anharmonicity strength of monolayer SnO. Further electronic structure analysis reveals that the existence of lone-pair Sn-5s electrons is the key factor for the small \k{appa} of monolayer SnO. These results provide a guide for the manipulation of thermal transport in the electronic or thermoelectric devices based on 2D tin oxides., Comment: 6 pages, 5 figures

Recent experiment reports that high thermal conductivity of ~1000 W/mK is observed in cubic boron arsenide crystal (BAs). In order to expand the scope of future applications, we use first-principles calculations to investigate the phonon-limited electronic transport in BAs family and modulation effect of pressure. In the case of electron doping, BAs, AlAs and AlSb exhibit the coupling between high frequency optical phonons and electron as well as the low frequency acoustical phonons in BSb. And BAs has the weakest electron-phonon coupling thus has a high N-type carrier mobility of 1740 cm^2/Vs. After the introduction of pressure, phonon spectra has more obvious change than the electronic structure. The phonon hardening under the pressure gives rise to the weakening of electron-phonon coupling. It is obtained that the pressure of 50 GPa can improve the mobility of BAs up to 4300 cm^2/Vs, which is much high and great significance to the current semiconductor industry., Comment: 7 pages