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1. Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectors.

2. High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere

6. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

7. Effect of aluminium diffusion into 2D hBN on the mechanical release of III-N heterostructures

8. Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

9. Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

10. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer

11. Development and simulated environment testing of β-(Al)Ga2O3-based photodetectors for space-based observation of the Herzberg continuum

13. Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys

14. Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

16. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

17. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

19. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

21. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

22. Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

23. Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

25. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

27. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

28. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

29. Suppression of Crack Generation in AlGaN/GaN Distributed Bragg Reflector Grown by MOVPE

30. InGaN-based solar cells modelling including spontaneous and piezoelectric polarizations

31. Theoretical analysis of the influence of defect density on photovoltaic performances of composition graded InGaN solar cells

32. Etude structurelle de l'InGaN en fonction de l'épaisseur et de la concentration d'indium

33. Crystal quality characterization of MO-VPE InxGa1-xN thin films using disorder parameters

34. Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers

38. Natural Boron and 10 B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.

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