393 results on '"Gaubas, E"'
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2. Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN
3. Room-temperature infrared photoluminescence in GaN doped with various impurities
4. Analysis of trap spectra in LEC and epitaxial GaAs
5. Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN
6. In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons
7. Modeling of radiation damage recovery in particle detectors based on GaN
8. Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
9. Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond
10. In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation
11. Barrier capacitance characteristics of CdS–Cu2S junction structures
12. Anneal dependent variations of recombination and generation lifetime in neutron irradiated MCZ Si
13. Photoconductivity spectra and deep levels in the irradiated p +–n–n + Si detectors
14. Recombination characteristics in 2–3 MeV protons irradiated FZ Si
15. Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
16. Study of recombination characteristics in 2 MeV protons irradiated and annealed Si structures
17. Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients
18. Development of cryogenic tracking detectors for very high luminosity experiments
19. Metal implants-dependent carrier recombination characteristics in Ge
20. Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
21. Recent progress in CERN RD39: radiation hard cryogenic silicon detectors for applications in LHC experiments and their future upgrades
22. Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
23. Cryogenic Si detectors for ultra radiation hardness in SLHC environment
24. GaN as a radiation hard particle detector
25. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment
26. Recent developments of CERN RD39 cryogenic tracking detectors collaboration: CERN RD39 Collaboration
27. Characterization of the radiation-induced defects in Si detectors by carrier transport and decay transients
28. Fluence dependent carrier lifetime variations in Si detectors determined by photoconductivity and transient grating techniques
29. Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
30. Super-radiation hard particle tracking at the CERN SLHC
31. Electrical characterization of shallow cobalt-silicided junctions
32. Carrier lifetime studies in Ge using microwave and infrared light techniques
33. Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation
34. Study of the electrical characteristics of CdZnTe Schottky diodes
35. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
36. Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures
37. Study of carrier recombination and trapping processes in γ-ray- and proton-irradiated silicon
38. Development of radiation tolerant semiconductor detectors for the Super-LHC
39. Characterization of carrier recombination and trapping processes in proton irradiated silicon by microwave absorption transients
40. Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence
41. Wide bandgap semiconductor detectors for harsh radiation environments
42. Radiation-hard semiconductor detectors for SuperLHC
43. Ion beam induced charge imaging of epitaxial GaN detectors
44. A simple technique for the separation of bulk and surface recombination parameters in silicon
45. Low-temperature tracking detectors
46. Recent results from the CERN RD39 Collaboration on super-radiation hard cryogenic silicon detectors for LHC and LHC upgrade
47. On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
48. Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN
49. The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles
50. Semi-insulating GaN and its evaluation for α particle detection
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