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Biased bilayer graphene (BBG) is an important system for studies of excitonic effects in graphene--based systems, with its easily tunable bandgap. This bandgap is governed by an external gate voltage, allowing one to tune the optical response of the system. In this paper, we study the excitonic linear and nonlinear optical response of Bernal stacked BBG as a function of the gate voltage, both for in--plane (IP) and out--of--plane (OOP) directions. Based on a semi-analytical model of the electronic structure of BBG describing the influence of gate voltage on excitonic binding energies, we focus our discussion on both the IP and OOP excitonic response. Both linear and second harmonic generation (SHG) nonlinear responses are shown to be very sensitive to the gate voltage, as both the interband momentum matrix elements and the bandgap of the system will vary greatly with bias potential., Comment: 18 pages, 8 figures

The optical properties of two-dimensional materials are exceptional in several respects. They are highly anisotropic and frequently dominated by excitonic effects. Dipole-allowed second order non-linear optical properties require broken inversion symmetry. Hence, several two-dimensional materials show strong in-plane (IP) non-linearity but negligible out-of-plane (OOP) response due to vertical symmetry. By considering buckled hexagonal monolayers, we analyze the critical role of broken vertical symmetry on their excitonic optical response. Both linear as well as second order shift current and second harmonic response are studied. We demonstrate that substantial OOP non-linear response can be obtained, in particular, through off-diagonal tensor elements coupling IP excitation to OOP response. Our findings are explained by excitonic selection rules for OOP response and the impact of dielectric screening on excitons is elucidated., Comment: 20 pages, 8 figures

Biased bilayer graphene (BBG) is a variable band gap semiconductor, with a strongly field-dependent band gap of up to $300 \, \text{meV}$, making it of particular interest for graphene-based nano-electronic and -photonic devices. The optical properties of BBG are dominated by strongly bound excitons. We perform ab initio density-functional-theory+Bethe-Salpeter-equation modelling of excitons in BBG and calculate the exciton band structures and optical matrix elements for field strengths in the range $30-300 \, \text{mV}/{\unicode{x212B}}$. The exciton properties prove to have a strong field dependence, with both energy ordering and dipole alignment varying significantly between the low and high field regions. Namely, at low fields we find a mostly dark ground state exciton, as opposed to high fields, where the lowest exciton is bright. Also, excitons preferentially align with a dipole moment opposite the field, due to the field-induced charge transfer in the ground state of BBG. However, in stronger fields, this alignment becomes energetically less favorable. Additionally, the bright excitons show particle- and light-like bands similar to monolayer transition metal dichalchogenides. Finally, we model the radiative lifetimes and emission properties of BBG, which prove to be strongly dependent on temperature in addition to field strength.

Excitons in low-dimensional materials behave mathematically as confined hydrogen atoms. An appealing unified description of confinement in quantum wells or wires, etc., is found by restricting space to a fractional dimension 1 < D <= 3 serving as an adjustable parameter. We compute the dynamic polarizability of D-dimensional excitons in terms of discrete and continuum oscillator strengths. Analyzing exact sum rules, we show that continuum contributions are increasingly important in low dimensions. The dynamical responses of excitons in various dimensions are compared. Finally, an exact and compact closed-form expression for the dynamic polarizability is found. This completely general formula takes D as input and provides exact results for arbitrary frequency.

Several monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors and potentially efficient emitters in light emitting devices. Photons are emitted when strongly bound excitons decay radiatively, and accurate models of such excitons are important for a full understanding of the emission. Importantly, photons are emitted in directions uniquely determined by the exciton center of mass momentum and with lifetimes determined by the exciton transition matrix element. The exciton band structures of two-dimensional hexagonal materials, including TMDs, are highly unusual with coexisting particle- and light-like bands. The latter is non-analytic with emission selection rules essentially opposite to the particle-like states, but has been ignored in analyses of TMD light emission so far. In the present work, we analyse the temperature and angular dependence of light emission from both exciton species and point out several important consequences of the unique exciton band structure. Within a first-principles Density-Functional-Theory+Bethe-Salpeter-Equation framework, we compute exciton band structures and optical matrix elements for the important TMDs MoS2, MoSe2, WS2, and WSe2. At low temperature, only the particle-like band is populated and our results agree with previous work. However, at slightly elevated temperatures, a significant population of the light-like band leads to modified angular emission patterns and lifetimes. Clear experimental fingerprints are predicted and explained by a simple four-state model incorporating spin-orbit as well as intervalley exchange coupling.

We consider a Stark Hamiltonian on a two-dimensional bounded domain with Dirichlet boundary conditions. In the strong electric field limit we derive, under certain local convexity conditions, a three-term asymptotic expansion of the low-lying eigenvalues. This shows that the excitation frequencies are proportional to the square root of the boundary curvature at a certain point determined by the direction of the electric field.

Commensurability oscillations in the magnetotransport of periodically patterned systems, emerging from the interplay of cyclotron orbit and the pattern periodicity, are a benchmark of mesoscopic physics in electron gas systems. Exploiting similar effects in 2D materials would allow exceptional control of electron behaviour, but is hindered by the requirement to maintain ballistic transport over large length scales. Recent experiments have overcome this obstacle and observed distinct magnetoresistance commensurability peaks for perforated graphene sheets (antidot lattices). Interpreting the exact mechanisms behind these peaks is of key importance, particularly in graphene where a range of regimes are accessible by varying the electron density. In this work a fully atomistic, device-based simulation of magnetoresistance experiments allows us to analyse both the resistance peaks and the current flow at commensurability conditions. Magnetoresistance spectra are found in excellent agreement with experiment, but we show that a semi-classical analysis, in terms of simple skipping or pinned orbits, is insufficient to fully describe the corresponding electron trajectories. Instead, a generalised mechanism in terms of states bound to individual antidots, or to groups of antidots, is required. Commensurability features are shown to arise when scattering between such states is enhanced. The emergence and suppression of commensurability peaks is explored for different antidot sizes, magnetic field strengths and electron densities. The insights gained from our study will guide the design and optimization of future experiments with nanostructured graphene.

We consider the interaction of gapped graphene in the two-band approximation using an explicit time-dependent approach. In addition to the full high-order harmonic generation (HHG) spectrum, we also obtain the perturbative harmonic response using the time-dependent method at photon energies covering all the significant features in the responses. The transition from the perturbative to the fully non-perturbative regime of HHG at these photon energies is studied in detail., Comment: 11 pages, 9 figures

Magnetic fields are often used for characterizing transport in nanoscale materials. Recent magnetotransport experiments have demonstrated that ballistic transport is possible in graphene antidot lattices (GALs). These experiments have inspired the present theoretical study of GALs in a perpendicular magnetic field. We calculate magnetotransport through graphene antidot barriers (GABs), which are finite rows of antidots arranged periodically in a pristine graphene sheet, using a tight-binding model and the Landauer-B\"uttiker formula. We show that GABs behave as ideal Dirac mass barriers for antidots smaller than the magnetic length, and demonstrate the presence of magnetic edge states, which are localized states on the periphery of the antidots due to successive reflections on the antidot edge in the presence of a magnetic field. We show that these states are robust against variations in lattice configuration and antidot edge chirality. Moreover, we calculate the transmittance of disordered GABs and find that magnetic edge states survive a moderate degree of disorder. Due to the long phase-coherence length in graphene and the robustness of these states, we expect magnetic edge states to be observable in experiments as well.

A newly developed hypergeometric resummation technique [H. Mera et al., Phys. Rev. Lett. 115, 143001 (2015)] provides an easy-to-use recipe to obtain conserving approximations within the self-consistent nonequilibrium many-body perturbation theory. We demonstrate the usefulness of this technique by calculating the phonon-limited electronic current in a model of a single-molecule junction within the self-consistent Born approximation for the electron-phonon interacting system, where the perturbation expansion for the nonequilibrium Green function in powers of the free bosonic propagator typically consists of a series of non-crossing \sunset" diagrams. Hypergeometric resummation preserves conservation laws and it is shown to provide substantial convergence acceleration relative to more standard approaches to self-consistency. This result strongly suggests that the convergence of the self-consistent \sunset" series is limited by a branch-cut singularity, which is accurately described by Gauss hypergeometric functions. Our results showcase an alternative approach to conservation laws and self-consistency where expectation values obtained from conserving perturbation expansions are \summed" to their self-consistent value by analytic continuation functions able to mimic the convergence-limiting singularity structure., Comment: 13 pages, 6 figures

Studies of atomic systems in electric fields are challenging because of the diverging perturbation series. However, physically meaningful Stark shifts and ionization rates can be found by analytical continuation of the series using appropriate branch cut functions. We apply this approach to low-dimensional hydrogen atoms in order to study the effects of reduced dimensionality. We find that modifications by the electric field are strongly suppressed in reduced dimensions. This finding is explained from a Landau-type analysis of the ionization process.

Dopants positioned near edges in nanostructured graphene behave differently from bulk dopants. Most notable, the amount of charge transferred to delocalized states (i.e. doping efficiency) depends on position as well as edge chirality. We apply a self-consistent tight-binding model to analyze this problem focusing on substitutional nitrogen and boron doping. Using a Greens function technique, very large structures can be studied and artificial interactions between dopants in periodically repeated simulations cells are avoided. We find pronounced signatures of edges in the local impurity density of states. Importantly, the doping efficiency is found to oscillate with sublattice position, in particular, for dopants near zigzag edges. Finally, to assess the effect of electron-electron interactions, we compute the self-energy corrected Greens function.

Inspired by recent experimental realizations of monolayer Fe membranes in graphene perforations, we perform ab initio calculations of Fe monolayers and membranes embedded in graphene in order to assess their structural stability and magnetization. We demonstrate that monolayer Fe has a larger spin magnetization per atom than bulk Fe and that Fe membranes embedded in graphene exhibit spin magnetization comparable to monolayer Fe. We find that free-standing monolayer Fe is structurally more stable in a triangular lattice compared to both square and honeycomb lattices. This is contradictory to the experimental observation that the embedded Fe membranes form a square lattice. However, we find that embedded Fe membranes in graphene perforations can be more stable in the square lattice configuration compared to the triangular. In addition, we find that the square lattice has a lower edge formation energy, which means that the square Fe lattice may be favored during formation of the membrane.

Nanostructured graphene on SiO2 substrates pave the way for enhanced light-matter interactions and explorations of strong plasmon-phonon hybridization in the mid-infrared regime. Unprecedented large-area graphene nanodot and antidot optical arrays are fabricated by nanosphere lithography, with structural control down to the sub-100 nanometer regime. The interaction between graphene plasmon modes and the substrate phonons is experimentally demonstrated and structural control is used to map out the hybridization of plasmons and phonons, showing coupling energies of the order 20 meV. Our findings are further supported by theoretical calculations and numerical simulations., Comment: 7 pages including 6 figures. Supporting information is available upon request to authors

Recent experimental results have demonstrated the ability of monolayer MoS$_2$ to efficiently generate second harmonic fields with susceptibilities between 0.1 and 100 nm/V. However, no theoretical calculations exist with which to interpret these findings. In particular, it is of interest to theoretically estimate the modulus of the second harmonic response, since experimental reports on this differ by almost three orders of magnitude. Here, we present single-particle calculations of the second harmonic response based on a tight-binding band structure. We compare directly with recent experimental findings and include in the discussion also spectral features and the effects of multiple layers.

We study graphene antidot lattices (GALs) in magnetic fields. Using a tight-binding model and a recursive Green's function technique that we extend to deal with periodic structures, we calculate Hofstadter butterflies of GALs. We compare the results to those obtained in a simpler gapped graphene model. A crucial difference emerges in the behaviour of the lowest Landau level, which in a gapped graphene model is independent of magnetic field. In stark contrast to this picture, we find that in GALs the band gap can be completely closed by applying a magnetic field. While our numerical simulations can only be performed on structures much smaller than can be experimentally realized, we find that the critical magnetic field for which the gap closes can be directly related to the ratio between the cyclotron radius and the neck width of the GAL. In this way, we obtain a simple scaling law for extrapolation of our results to more realistically sized structures and find resulting quenching magnetic fields that should be well within reach of experiments., Comment: 8 pages, 8 figures

We present a perturbative method for calculating the optical Hall conductivity in a tight-binding framework based on the Kubo formalism. The method involves diagonalization only of the Hamiltonian in absence of the magnetic field, and thus avoids the computational problems usually arising due to the huge magnetic unit cells required to maintain translational invariance in presence of a Peierls phase. A recipe for applying the method to numerical calculations of the magneto-optical response is presented. We apply the formalism to the case of ordinary and gapped graphene in a next-nearest neighbour tight-binding model as well as graphene antidot lattices. In both case, we find unique signatures in the Hall response, that are not captured in continuum (Dirac) approximations. These include a non-zero optical Hall conductivity even when the chemical potential is at the Dirac point energy. Numerical results suggest that this effect should be measurable in experiments., Comment: 7 pages, 4 figures, accepted in Physical Review B

We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gap in the surrounding antidot lattices enable localized states to emerge in the central waveguide region. We model the waveguides via a position-dependent mass term in the Dirac approximation of graphene, and arrive at analytical results for the dispersion relation and spinor eigenstates of the localized waveguide modes. To include atomistic details we also use a tight-binding model, which is in excellent agreement with the analytical results. The waveguides resemble graphene nanoribbons, but without the particular properties of ribbons that emerge due to the details of the edge. We show that electrons can be guided through kinks without additional resistance and that transport through the waveguides is robust against structural disorder., Comment: 9 pages, 7 figures, accepted for publication in Physical Review B

Periodic arrays of antidots, i.e. nanoscale perforations, in graphene enable tight confinement of carriers and efficient transport barriers. Such barriers evade the Klein tunneling mechanism by being of the mass rather than electrostatic type. While all graphene antidot lattices (GALs) may support directional barriers, we show, however, that a full transport gap exists only for certain orientations of the GAL. Moreover, we assess the applicability of gapped graphene and the Dirac continuum approach as simplified models of various antidot structures showing that, in particular, the former is an excellent approximation for transport in GALs supporting a bulk band gap. Finally, the transport properties of a GAL based resonant tunneling diode is analyzed indicating that such advanced graphene based devices may, indeed, be realized using GAL structures., Comment: 12 pages, 9 figures, accepted for publication on Journal of Applied Physics

Much attention has been focused on ways of rendering graphene semiconducting. We study periodically gated graphene in a tight-binding model and find that, contrary to predictions based on the Dirac equation, it is possible to open a band gap at the Fermi level using electrostatic gating of graphene. However, comparing to other methods of periodically modulating graphene, namely perforated graphene structures, we find that the resulting band gap is significantly smaller. We discuss the intricate dependence of the band gap on the magnitude of the gate potential as well as the exact geometry of the edge of the gate region. The role of the overlap of the eigenstates with the gate region is elucidated. Considering more realistic gate potentials, we find that introducing smoothing in the potential distribution, even over a range of little more than a single carbon atom, reduces the attainable band gap significantly., Comment: 9 pages, 9 figures

We study the optical properties of gapped graphene in presence of a magnetic field. We consider a model based on the Dirac equation, with a gap introduced via a mass term, for which analytical expressions for the diagonal and Hall optical conductivities can be derived. We discuss the effect of the mass term on electron-hole symmetry and $\pi$-$\pi^*$ symmetry and its implications for the optical Hall conductivity. We compare these results with those obtained using a tight-binding model, in which the mass is modeled via a staggered potential and a magnetic field is included via a Peierls substitution. Considering antidot lattices as the source of the mass term, we focus on the limit where the mass term dominates the cyclotron energy. We find that a large gap quenches the effect of the magnetic field. The role of overlap between neighboring $\pi$ orbitals is investigated, and we find that the overlap has pronounced consequences for the optical Hall conductivity that are missed in the Dirac model., Comment: 10 pages, 9 figures, submitted for Physical Review B

Pristine graphene is a semimetal and thus does not have a band gap. By making a nanometer scale periodic array of holes in the graphene sheet a band gap may form; the size of the gap is controllable by adjusting the parameters of the lattice. The hole diameter, hole geometry, lattice geometry and the separation of the holes are parameters that all play an important role in determining the size of the band gap, which, for technological applications, should be at least of the order of tenths of an eV. We investigate four different hole configurations: the rectangular, the triangular, the rotated triangular and the honeycomb lattice. It is found that the lattice geometry plays a crucial role for size of the band gap: the triangular arrangement displays always a sizable gap, while for the other types only particular hole separations lead to a large gap. This observation is explained using Clar sextet theory, and we find that a sufficient condition for a large gap is that the number of sextets exceeds one third of the total number of hexagons in the unit cell. Furthermore, we investigate non-isosceles triangular structures to probe the sensitivity of the gap in triangular lattices to small changes in geometry.