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13 results on '"Gapihan, E."'

1. Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Author

Ulloa, J. M., Celebi, C., Koenraad, P. M., Simon, A., Gapihan, E., Letoublon, A., Bertru, N., Drouzas, I., Mowbray, D.J., Steer, M.J., and Hopkinson, M.

Subjects
Arsenic compounds -- Mechanical properties, Arsenic compounds -- Atomic properties, Indium -- Mechanical properties, Indium -- Atomic properties, Scanning tunneling microscopy -- Usage, Physics
Abstract

The cross-sectional scanning tunneling microscopy is used to study the impact of the capping material on the structural properties of self-assembled InAs quantum dots (QDs) at the atomic scale. The results have shown that the dot/capping layer strain plays a major role in inducing dot decomposition during capping.

Published
2007

2. FeMn Exchange biased storage layer for thermally assisted MRAM

Author

Gapihan, E., Sousa, R.C., Herault, J., Papusoi, C., Delaye, M.T., Dieny, B., Prejbeanu, I.L., Ducruet, C., Portemont, C., Mackay, K., and Nozieres, J.-P.

Subjects
Iron alloys -- Magnetic properties, Iron alloys -- Electric properties, Iron alloys -- Thermal properties, MRAM (Computer memory) -- Analysis, Magnetic hysteresis -- Measurement, Manganese alloys -- Magnetic properties, Manganese alloys -- Electric properties, Manganese alloys -- Thermal properties, Business, Electronics, Electronics and electrical industries
Published
2010

3. Materials investigation for thermally-assisted magnetic random access memory robust against 400°C temperatures.

Author

Annunziata, A. J., Trouilloud, P. L., Bandiera, S., Brown, S. L., Gapihan, E., O'Sullivan, E. J., and Worledge, D. C.

Subjects
MAGNETIC materials, RANDOM access memory, MAGNETORESISTANCE measurement, MAGNETIC fields, METALLIC oxides
Abstract

Magnetic materials are investigated in order to enable a new type of Thermally Assisted Magnetic Random Access Memory (TAS-MRAM). A TAS-MRAM materials stack that is robust against the 400 °C process temperatures required for embedded integration with complementary metal oxide silicon processes is demonstrated. In unpatterned sheet film stacks, a stable resistance-area product, tunneling magnetoresistance (MR)>100%, and temperature-dependent exchange bias of 1500 Oe after 400 °C anneal are shown for this stack. It is further shown that by doping the sense and storage layers with Ta using thin laminations of Ta/CoFeB, the moment of each layer can be reduced by more than 40% without a major reduction in MR. In patterned nanopillar devices, it is shown that by reducing the moment of the sense and storage layers with laminations of Ta, and by adding a second MgO barrier, the resistance versus applied field loop quality is maintained, while the read field is reduced by more than 40% and devices survive 108 write cycles without breakdown or significant degradation. [ABSTRACT FROM AUTHOR]

Published
2015
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4. IrMn and FeMn blocking temperature dependence on heating pulse width

Author

Lombard, L., Gapihan, E., Sousa, R.C., Dahmane, Y., Conraux, Y., Portemont, C., Ducruet, C.;, Prejbeanu, I.L., Papusoi, C., Nozieres, J.P., Dieny, B., and Schuhl, A.

Subjects
Iridium -- Magnetic properties, Iridium -- Electric properties, Antiferromagnetism -- Analysis, Physics
Abstract

Several analyses are conducted to explain the effects of heating pulse width and antiferromagent thickness on the write power density of the IrMn and FeMn compounds. Lower thickness is shown to lead to low write power density.

Published
2010

6. Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires

Author

Ulloa, J.-M., Koenraad, Paul, Gapihan, E., Létoublon, Antoine, Bertru, Nicolas, Fuster, D., Gonzalez, Y., Gonzalez, Luisa, Cobra (COBRA), Eindhoven University of Technology [Eindhoven] (TU/e), Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectronica [Spain] (CNM)-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and Boyer, Soline

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2007

7. Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm

Author

Elias, Georges, Létoublon, Antoine, Caroff, Philippe, Alghoraibi, Ibrahim, Bertru, Nicolas, Dehaese, Olivier, Rohel, Tony, Le Corre, Alain, Ponchet, Anne, Ulloa, J.-M., Koenraad, Paul, Gapihan, E., Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Cobra (COBRA), Eindhoven University of Technology [Eindhoven] (TU/e), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2007

8. Double capping of molecular beam epixtaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

Author

Ulloa Herrero, J.M., Koenraad, P.M., Gapihan, E., Létoublon, A., Bertru, N., Ulloa Herrero, J.M., Koenraad, P.M., Gapihan, E., Létoublon, A., and Bertru, N.

Abstract

Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots.

Published
2007

9. Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Author

Ulloa Herrero, J.M., Celebi, C., Koenraad, P.M., Simon, A., Gapihan, E., Létoublon, A., Bertru, N., Drouzas, I.W.D., Mowbray, D.J., Steer, M.J., Hopkinson, M., Ulloa Herrero, J.M., Celebi, C., Koenraad, P.M., Simon, A., Gapihan, E., Létoublon, A., Bertru, N., Drouzas, I.W.D., Mowbray, D.J., Steer, M.J., and Hopkinson, M.

Abstract

The impact of the capping material on the structural properties of self-assembled InAs quantum dots (QDs) was studied at the at. scale by cross-sectional scanning tunneling microscopy. Capping with lattice matched layers and with strained layers was analyzed. When the different capping materials are lattice matched to the substrate, the differences in the QD properties can be dominated by chem. effects: InAs/InP QDs capped with InP have a 2 ML smaller height than those capped with InGaAs or InGaAsP due to As/P exchange induced decompn. The height of the dots is found to be much more strongly affected when strained capping layers are used. InAs/GaAs, QDs capped with InGaAs are considerably taller than typical GaAs-capped dots. When GaAsSb is used as the capping layer, the dots are almost full pyramids with a height of 9.5 nm, indicating that dot decompn. is almost completely suppressed. This indicates that the dot/capping layer strain plays a major role in inducing dot decompn. during capping. [on SciFinder (R)]

Published
2007

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