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Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications.

Interfacial interactions are crucial in a variety of fields and can greatly affect the electric, magnetic, and chemical properties of materials. Among them, interface orbital hybridization plays a fundamental role in the properties of surface electrons such as dispersion, interaction, and ground states. Conventional measurements of electronic states at interfaces such as scanning tunneling microscopes are all based on electric interactions which, however, suffer from strong perturbation on these electrons. Here we unveil a new experimental detection of interface electrons based on the weak magnetic interactions between them and the nitrogen-vacancy (NV) center in diamond. With negligible perturbation on the interface electrons, their physical properties can be revealed by the NV spin coherence time. In our system, the interface interaction leads to significant decreases in both the density and coherence time of the electron spins at the diamond-graphene interface. Furthermore, together with electron spin resonance spectra and first-principle calculations, we can retrieve the effect of interface electron orbital hybridization. Our study opens a new pathway toward the microscopic probing of interfacial electronic states with weak magnetic interactions and provides a new avenue for future research on material interfaces.

Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural rotations, but its controlled switching remains elusive due to its invariance under both time reversal and spatial inversion. Here, we demonstrate electrical switching of ferro-rotational domain states in nanometer-thick 1T-TaS$_2$ crystals in its charge-density-wave phases. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, realized in a simple two-terminal configuration using a volt-scale voltage. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable, and nonvolatile isothermal state switching at room temperature. These results pave the path for manipulation of the ferro-rotational order and its nanoelectronic applications.

The charge-density wave (CDW) phase is often accompanied by the condensation of a soft acoustic phonon mode, giving rise to lattice distortion and charge density modulation. This picture was challenged for the recently discovered kagome metal CsV$_3$Sb$_5$, based on the evidence of absence of soft phonons. Here we report the observation of Raman-active CDW amplitude modes in this material, which are collective excitations typically thought to emerge out of frozen soft phonons. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which acoustic phonon softening can cease to exist. The observation of amplitude modes in the absence of soft phonons highlights the unconventional nature of the CDW in CsV$_3$Sb$_5$.

The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and thus their further technological applications. For instance, the freestanding Sb monolayer in puckered honeycomb phase ({\alpha}-antimonene), the structural analog of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and thus the electron band of epitaxial monolayer. As a result, the nearly freestanding (semiconducting) {\alpha}-antimonene monolayer with a band gap of ~170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer {\alpha}-antimonene. This study paves the way towards modifying the electron structure in two-dimensional vdW materials through interface engineering., Comment: 18 pages, 4 figures

In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap., Comment: 16 pages, 5 figures

Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of {\alpha} phase Sb ({\alpha}-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, we successfully grow high-quality monolayer {\alpha}-antimonene, with the thickness finely controlled. The {\alpha}-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscope, density functional theory calculations and transport measurement, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the {\alpha}-antimonene promising in the future electronic applications., Comment: 14 pages, 5 figures