Search

Your search keyword '"Ganguly G."' showing total 267 results
Start Over Author "Ganguly G."
267 results on '"Ganguly G."'

1. Shape coexistence in 153Ho

Author

Pramanik, Dibyadyuti, Sarkar, S., Sarkar, M. Saha, Bisoi, Abhijit, Ray, Sudatta, Dasgupta, Shinjinee, Chakraborty, A., Krishichayan, Kshetri, Ritesh, Ray, Indrani, Ganguly, S., Pradhan, M. K., Basu, M. Ray, Raut, R., Ganguly, G., Ghugre, S. S., Sinha, A. K., Basu, S. K., Bhattacharya, S., Mukherjee, A., Banerjee, P., and Goswami, A.

Subjects
Nuclear Experiment, Nuclear Theory
Abstract

The high-spin states in 153Ho, have been studied by 139 57 La(20Ne, 6n) reaction at a projectile energy of 139 MeV at Variable Energy Cyclotron Centre (VECC), Kolkata, India, utilizing an earlier campaign of Indian National Gamma Array (INGA) setup. Data from gamma-gamma coincidence, directional correlation and polarization measurements have been analyzed to assign and confirm the spins and parities of the levels. We have suggested a few additions and revisions of the reported level scheme of 153Ho. The RF-gamma time difference spectra have been useful to confirm the half-life of an isomer in this nucleus. From the comparison of experimental and theoretical results, it is found that there are definite indications of shape coexistence in this nucleus. The experimental and calculated lifetimes of several isomers have been compared to follow the coexistence and evolution of shape with increasing spin., Comment: Accepted for publication in Physical Review C as a regular article

Published
2016
Full Text
View/download PDF

2. Absence of M2 Retardation in $^{35}Cl$: Evidence for Stronger Isospin-Mixing Effects in A=35 Mirror Nuclei

Author

Kshetri, Ritesh, Ray, Indrani, Banerjee, P., Raut, R., Goswami, A., Chatterjee, J. M., Chattopadhyay, S., Pramanik, U. Datta, Mukherjee, A., Dey, C. C., Bhattacharya, S., Dasmahapatra, B., Sarkar, M. Saha, Sarkar, S., Bhowal, S., Ganguly, G., Golda, K. S., Kumar, R., Singh, R. P., Muralithar, S., Rao, P. V. Madhusudhana, Madhavan, N., Das, J. J., Nath, S., Sugathan, P., Jhingan, A., Bhowmik, R. K., Datta, P., Joshi, P. K., and Jain, H. C.

Subjects
Nuclear Experiment
Abstract

The lifetime of the 3163 keV, 7/2$^-$ isomeric state in $^{35}Cl$ that decays by a stretched M2 transition to the $3/2^+$ ground state, has been re-measured using the Doppler Shift Attenuation Method, by gating on the 1185 keV transition which directly feeds this state. This eliminates the uncertainties in the measurement arising from the direct feedings from the continuum. A mean life of 0.6$^{+0.5}_{-0.2}$ ps has been obtained from the present work. This is considerably smaller than the adopted value 45.3(6) ps. Implication of this major reduction in the lifetime has been pointed out., Comment: To be published in the Proc. of International Workshop on Nuclear Structure Physics at the Extremes: New Directions (NUSPE 05), 21-24 March, 2005, Shimla India

Published
2005

4. Proteinopathy, oxidative stress and mitochondrial dysfunction: cross talk in Alzheimer's disease and Parkinson's disease

Author

Ganguly G, Chakrabarti S, Chatterjee U, and Saso L

Subjects
proteinopathy, amyloid beta, oxidative stress, α-Synuclein, mitochondrial dysfunction., Therapeutics. Pharmacology, RM1-950
Abstract

Gargi Ganguly,1 Sasanka Chakrabarti,2 Uttara Chatterjee,1 Luciano Saso3 1Department of Pathology, Institute of Post Graduate Medical Education and Research, Kolkata, 2Department of Biochemistry, ICARE Institute of Medical Sciences and Research, Haldia, West Bengal, India; 3Department of Physiology and Pharmacology “Vittorio Erspamer”, Sapienza University of Rome, Rome, Italy Abstract: Alzheimer’s disease and Parkinson’s disease are two common neurodegenerative diseases of the elderly people that have devastating effects in terms of morbidity and mortality. The predominant form of the disease in either case is sporadic with uncertain etiology. The clinical features of Parkinson’s disease are primarily motor deficits, while the patients of Alzheimer’s disease present with dementia and cognitive impairment. Though neuronal death is a common element in both the disorders, the postmortem histopathology of the brain is very characteristic in each case and different from each other. In terms of molecular pathogenesis, however, both the diseases have a significant commonality, and proteinopathy (abnormal accumulation of misfolded proteins), mitochondrial dysfunction and oxidative stress are the cardinal features in either case. These three damage mechanisms work in concert, reinforcing each other to drive the pathology in the aging brain for both the diseases; very interestingly, the nature of interactions among these three damage mechanisms is very similar in both the diseases, and this review attempts to highlight these aspects. In the case of Alzheimer’s disease, the peptide amyloid beta (Aβ) is responsible for the proteinopathy, while α-synuclein plays a similar role in Parkinson’s disease. The expression levels of these two proteins and their aggregation processes are modulated by reactive oxygen radicals and transition metal ions in a similar manner. In turn, these proteins – as oligomers or in aggregated forms – cause mitochondrial impairment by apparently following similar mechanisms. Understanding the common nature of these interactions may, therefore, help us to identify putative neuroprotective strategies that would be beneficial in both the clinical conditions. Keywords: proteinopathy, amyloid beta, oxidative stress, α-synuclein, mitochondrial dysfunction

Published
2017

6. A guide to building climate-financial scenarios for financial institutions

Author

Koberle, A, Ostrovnaya, A, and Ganguly, G

Subjects
climate change, finance, economics, climate
Abstract

This briefing considers how the financial sector can manage the risks associated with moving to a zero-carbon future. The paper outlines why it is essential for financial institutions to understand so-called climate transition scenarios, which explore this journey to a zero-carbon future. The paper also sets out a framework that financial institutions can use to construct, or understand and use, climate transition scenarios in the context of financial sector risk management.

Published
2021
Full Text
View/download PDF

15. Reliability issues in plated-through-holes due to insertion-mount compliant-pin connectors

Author

Ganguly, G. and Dasgupta, A.

Subjects
Reliability (Engineering) -- Research, Connectors -- Research, Deformations (Mechanics) -- Research, Electronic packaging -- Research, Electronics
Abstract

Stresses arising in plated through holes (PTHs) and surrounding printed wiring board (PWB) substrates due to pin forces of insertion-mount compliant-pin connectors are modeled analytically. The analytical model is based on separation of variable techniques using Fourier series representation of the pin loads, and will be calibrated in the future using both experimental measurements as well as numerical finite element results. Linear and nonlinear results are presented in this paper, to predict deformation and stresses in the assembly. Incremental load-stepping methods are used, to handle nonlinear material properties such as elastic-plastic behavior of copper and post-damage behavior of the PWB substrate. The nonlinearity of the materials is modeled with a simplified bilinear stress-strain curve. The goal is to develop mechanistic predictive models for PTH behavior under insertion forces of compliant pins, to reduce the need for highly repetitive and costly failure analysis for damage evaluation, resulting in significant cost savings to the industry as a whole.

Published
1995

35. Vaginal birth after cesarean section (VBAC) versus emergency repeat cesarean section at teaching hospitals in India: an ICMR task force study

Author

B. Dhillon, Nomita Chandhiok, Bharti S., Bhatia P., Coyaji K.J., Das M.C., Das V., Davar R.G., Devambigai S., Ganguly G., Ghosh T.K., Gopalan S., Habeebulah S., Idnani R., Kochar S., Kodkany B.S., Madhini V., Mittal S., Mukherjee J., Naphade P.R., Nevrekar P., Padmanaban I., Pagi S.L., Patnaik S., Rajarajeswari S., Salhan S., Salvi V., Sanghamitra M., Sharma S., Soni I.J.K., Sulekha P.B., and Taly A.

Subjects
Gynecology, medicine.medical_specialty, Eclampsia, Blood transfusion, Repeat Cesarean Section, business.industry, Vaginal birth, Vaginal delivery, medicine.medical_treatment, Public health, medicine.disease, Childbirth, Medicine, Caesarean section, business, reproductive and urinary physiology
Abstract

Background: Objective of current study was to study the outcome of trial of vaginal birth after Previous Cesarean Section (PCS) and indications for emergency repeat cesarean section at teaching hospitals in India. Methods: Prospective data was recorded on management practices, associated complications and mortality for a period of 8 months in 2005-2006 at 30 medical colleges/teaching hospitals for delivery. Results: A total of 155863 deliveries occurred during the study duration, there were 28.1% (n=43824) cesarean section and (10.1%) (n=15664) were the number of previous cesarean section. In 84% (n=13151) had repeat cesarean delivery and 2513 (16%) delivered vaginally. A trial of labor was planned in 4035 (25.8%) women. The success rate of VBAC was 62.3% with 2513 women had successful vaginal delivery and 1522 (37.7%) delivered by emergency repeat cesarean section. Major indication of emergency cesarean section was CPD (52.9%), foetal distress (25.8%), severe PIH/eclampsia (5.0%), previous 2 CS (0.7%), APH (1.4%) and others (2.7%). In majority, surgical technique was conventional and in 3.7% the Misgav-Ladach technique was used. Scar dehiscence and surgical complications were observed in 5.4% and 4.0% of cases respectively. Blood transfusion was given in 7.0% and post-operative complications were seen in 6.8%. Perinatal and maternal mortality was 18.0/1000 and 257/100000 deliveries respectively. Conclusions: Safety in childbirth for women with prior cesarean is a major public health concern. Repeat caesarean section and planned vaginal birth after cesarean section are both associated with benefits and harms and correct management represents one of the most significant and challenging issues in obstetric practice.

Published
2014
Full Text
View/download PDF

43. New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

Author

Hoefnagels, J. P.M., Langereis, E., van de Sanden, M. C.M., Kessels, W. M.M., Ganguly, G., Kondo, M., Schiff, E.A., Plasma & Materials Processing, Applied Physics and Science Education, and Atomic scale processing

Subjects
Materials science, Hydrogen, business.industry, Radical, Analytical chemistry, chemistry.chemical_element, Plasma, chemistry, Etching (microfabrication), Yield (chemistry), Spectroscopic ellipsometry, Optoelectronics, Deposition (phase transition), business, Wire source
Abstract

A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

Published
2004

44. External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique

Author

Smets, A. H.M., Kessels, W. M.M., van de Sanden, M. C.M., Kono, M., Ganguly, G., Schiff, E.A., Applied Physics and Science Education, Plasma & Materials Processing, and Atomic scale processing

Abstract

The interchangeability of ion bombardment and deposition temperature during a-Si:H film growth at high deposition rates (10-42 Å/s) by means of the expanding thermal plasma has been studied. The ion bombardment is generated by applying an external rf bias voltage on the substrate. It is shown that the opto-electronic performance of the a-Si:H films improves considerably when a moderate rf substrate bias voltage (∼20-60 V) is applied, i.e. the photo response increases two orders of magnitude up to 106. Furthermore, it is also revealed that the additional energy supplied to the growth surface by the ion bombardment, makes a reduction of the deposition temperature by ∼100°C possible, while preserving good material properties. On the basis of the results obtained, three effects caused by the rf substrate bias can be distinguished: creation of an additional growth flux, a reduction of the void incorporation, and an increase in the vacancy density.

Published
2004

45. Reduced light-induced changes of photoconductivity in duterated amorphous silicon.

Author

Ganguly, G., Suzuki, A., Yamasaki, S., Nomoto, K., and Matsuda, A.

Subjects
*PHOTOCONDUCTIVITY, *SILICON, *AMORPHOUS substances
Abstract

Presents a study which examined the light-induced changes in photoconductivity in deuterated amorphous silicon (α–Si:D). Details on studies of the light-induced changes in hydrogenated amorphous silicon (α–Si:H); Preparation of the dark conductivity, photoconductivity and spin density of the α–Si:D, H films; Conclusion of the study.

Published
1990
Full Text
View/download PDF

46. Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications

Author

Abelson J.R., Ganguly G., Matsumura H., Robertson J., Schiff E.A., Bollani, M, Binetti, S, Acciarri, M, Fumagalli, L, Arcari, A, Pizzini, S, Von Känel, H, BINETTI, SIMONA OLGA, ACCIARRI, MAURIZIO FILIPPO, Von Känel, H., Abelson J.R., Ganguly G., Matsumura H., Robertson J., Schiff E.A., Bollani, M, Binetti, S, Acciarri, M, Fumagalli, L, Arcari, A, Pizzini, S, Von Känel, H, BINETTI, SIMONA OLGA, ACCIARRI, MAURIZIO FILIPPO, and Von Känel, H.

Abstract

This work deals with the structural properties of nanocrystalline (nc) silicon films for solar cell applications, grown using a new PECVD process based on an arc discharge plasma characterized by low ion energies, called LEPECVD (Low energy PECVD). This process permits to increase the intensity of the plasma discharge in the growth region and thus to achieve higher growth rates while avoiding ion-induced surface damage of films. The structural properties of the LEPECVD grown films were studied as a function of the deposition parameters (substrate temperature, growth rate, hydrogen dilution) by Raman Spectroscopy, SEM, and HRTEM analysis. The results of this work allowed us to identify the process requirements suitable for the growth of nc-grains in an amorphous matrix.

Published
2003

Catalog

Books, media, physical & digital resources
See catalog results