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4. Editorial

Author

Gamiz, Francisco, primary, Sampedro, Carlos, additional, Donetti, Luca, additional, and Navarro, Carlos, additional

Published
2024
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6. Electrostatic Performance of InSb, GaSb, Si and Ge p-channel Nanowires

Author

Martinez-Blanque, Celso, Marin, Enrique G., Toral, Alejandro, Gonzalez-Medina, Jose M., Ruiz, Francisco G., Godoy, Andres, and Gamiz, Francisco

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by traditional semiconductors usually employed for p-MOS such as Si and Ge. To do so, a self-consistent kp simulator has been implemented to achieve an accurate description of the Valence Band and evaluate the charge behavior as a function of the applied gate bias. The contribution and role of the constituent capacitances, namely the insulator, centroid and quantum ones are assessed. It is demonstrated that the centroid and quantum capacitances are strongly dependent on the semiconductor material. We find a good inherent electrostatic performance of GaSb and InSb NWs, comparable to their Ge and Si counterparts making these III-Sb compounds good candidates for future technological nodes.

Published
2017
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8. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

Author

Sampedro, Carlos, Medina-Bailon, Cristina, Donetti, Luca, Padilla, Jose Luis, Navarro, Carlos, Marquez, Carlos, Gamiz, Francisco, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Woeginger, Gerhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Lirkov, Ivan, editor, and Margenov, Svetozar, editor

Published
2020
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9. Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator

Author

Medina-Bailon, Cristina, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar, Gamiz, Francisco, Asenov, Asen, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Woeginger, Gerhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Lirkov, Ivan, editor, and Margenov, Svetozar, editor

Published
2020
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11. Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator

Author

Medina-Bailon, Cristina, Sadi, Toufik, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar, Gamiz, Francisco, Asenov, Asen, Hutchison, David, Series Editor, Kanade, Takeo, Series Editor, Kittler, Josef, Series Editor, Kleinberg, Jon M., Series Editor, Mattern, Friedemann, Series Editor, Mitchell, John C., Series Editor, Naor, Moni, Series Editor, Pandu Rangan, C., Series Editor, Steffen, Bernhard, Series Editor, Terzopoulos, Demetri, Series Editor, Tygar, Doug, Series Editor, Nikolov, Geno, editor, Kolkovska, Natalia, editor, and Georgiev, Krassimir, editor

Published
2019
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14. List of contributors

Author

Bahk, Young-Mi, primary, Choi, Geunchang, additional, Filice, Marco, additional, Gamiz, Francisco, additional, He, Jing-Liang, additional, Jhon, Young In, additional, Jhon, Young Min, additional, Kislyakov, Ivan M., additional, Lee, Chao-Kuei, additional, Lee, Ju Han, additional, Ma, Guoqing, additional, Marchal, Juan A., additional, Marquez, Carlos, additional, Salazar, Norberto, additional, Seo, Minah, additional, Tiu, Z.C., additional, Wang, Jun, additional, Wang, Yunzhen, additional, Wu, Kan, additional, Yang, Hongyan, additional, Yuan, Libo, additional, Zhang, Bai-Tao, additional, and Zhang, Han, additional

Published
2021
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20. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.

Author

Lee, Ming-Wen, Chuang, Cheng-Wei, Gamiz, Francisco, Chang, Edward-Yi, and Lin, Yueh-Chin

Subjects
MODULATION-doped field-effect transistors, OHMIC contacts, GALLIUM nitride, RADIO frequency, FREQUENCIES of oscillating systems, ETCHING, ALUMINUM gallium nitride, POWER density
Abstract

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) "fabricated to improve device radio frequency (RF) performance for Ka-band applications" are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances (Rs and Rd) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure (NFmin) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (fT) and maximum oscillation frequency (fmax) value of the 1 μm line OEP device exhibited optimized values of 36.4 GHz and 158.29 GHz, respectively. The load–pull results show that the 1 μm line OEP HEMTs exhibited an optimized maximum output power density (Pout, max) of 1.94 W/mm at 28 GHz. The 1 μm line OEP HEMTs also exhibited an optimized NFmin of 1.75 dB at 28 GHz. The increase in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be fabricated, producing the best improvement in RF performance for Ka-band applications. [ABSTRACT FROM AUTHOR]

Published
2024
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25. Low-Frequency Noise in InGaAs-OI Transistors

Author

Marquez, Carlos, Navarro, Carlos, Karg, Siegfried, Ortega, Ruben, Zota, Cezar, and Gamiz, Francisco

Abstract

The III-V compounds have recently attracted high expectation due to their potential to relieve semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors have recently proved to operate as single-transistor dynamic random access memory (DRAM) exploiting the floating-body effect, enabling getting rid of the external capacitor and minimizing the cell footprint. However, extensive characterization of the interface quality and disturbing mechanisms affecting the device operation are still required. This work addresses the low-frequency noise characterization of these III-V InGaAs transistors focusing on their DRAM operation. The experimentally extracted power spectral density of current follows a flicker-noise characteristic which points to carrier number fluctuations as the main noise source. However, mobility degradation associated with trapping-detrapping carrier phenomena has also to be taken into account to model the device operation. Finally, the device dimension and the back-gate bias dependence on the effective trap density have been evaluated.

Published
2024
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35. Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact

Author

Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions, Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat, Calomarde Palomino, Antonio, Manich Bou, Salvador, Rubio Sola, Jose Antonio, Gamiz, Francisco, Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions, Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat, Calomarde Palomino, Antonio, Manich Bou, Salvador, Rubio Sola, Jose Antonio, and Gamiz, Francisco

Abstract

This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been performed to obtain a detailed map of the sensitivity areas in a full cell 6-T SRAM 22 nm bulk-FinFET process. The influence of the well depth on the charge collected by the drain devices of the SRAM cell has been studied, and it has been concluded that the collected charge can be reduced down to 300% simply by modifying the depth of the well, without affecting the performance of the cell. Different PTS layer depths have been analyzed in order to calculate which value minimizes the impact of the charge generated by an ion during its track along the FinFET body. The simulations carried out allow to conclude that the incorporation of a PTS layer not only reduces the leakage current, but also reduces the amount of charge, delivered by the ion, that reaches the drain region. Simulation results also show that the fraction of the charge generated by the ion impact, which is collected by the drain, mainly depends on the depth of the wells, whereas the PTS layer hardly modifies the collected charge., Peer Reviewed, Postprint (published version)

Published
2022

40. A Review of Sharp-Switching Band-Modulation Devices

Author

Cristoloveanu, Sorin, primary, Lacord, Joris, additional, Martinie, Sébastien, additional, Navarro, Carlos, additional, Gamiz, Francisco, additional, Wan, Jing, additional, Dirani, Hassan, additional, Lee, Kyunghwa, additional, and Zaslavsky, Alexander, additional

Published
2021
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47. Revisiting pseudo-MOSFET models for the characterization of ultrathin SOI wafers

Author

Rodriguez, Noel, Cristoloveanu, Sorin, and Gamiz, Francisco

Subjects
Voltage -- Measurement, Metal oxide semiconductor field effect transistors -- Models, Metal oxide semiconductor field effect transistors -- Evaluation, Silicon-on-isolator -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Modern ultrathin films can be characterized by reconsidering the pseudo-MOS transistor physics and models. Updated models are derived that have accounted for the density of interface states and channel-to-surface coupling effects in ultrathin silicon-on-insulator (SOI) wafers with passivated and nonpassivated surfaces.

Published
2009

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