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Optical and electrical properties of Hf- and Zn-doped β-Ga2O3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga2O3:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga2O3:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga2O3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies. [ABSTRACT FROM AUTHOR]

GaCH2, a free radical thought to play a role in the chemical vapor deposition of gallium-containing thin films and semiconductors, has been spectroscopically detected for the first time. The radical was produced in a pulsed discharge jet using a precursor mixture of trimethylgallium vapor in high pressure argon and studied by laser-induced fluorescence and wavelength resolved emission techniques. Partially rotationally resolved spectra of the hydrogenated and deuterated species were obtained, and they exhibit the nuclear statistical weight variations and subband structure expected for a 2A2–2B1 electronic transition. The measured spectroscopic quantities have been compared to our own ab initio calculations of the ground and excited state properties. The electronic spectrum of gallium methylene is similar to the corresponding spectrum of the aluminum methylene radical, which we reported in 2022. [ABSTRACT FROM AUTHOR]

The effect of high temperature annealing under O2 and N2 atmospheres on the electrical properties and defect formation on Sn doped n-type β-Ga2O3 bulk samples was investigated by electron paramagnetic resonance (EPR) spectroscopy. EPR, being a volume sensitive technique, probes the entire sample volume. Our results show an electrical compensation being correlated with the formation of a negatively charged Ga vacancy defect VGa2−. This VGa center is different from the one observed after particle irradiation. The associated shift of the Fermi level reveals the presence of Fe3+, Cu2+, and Cr3+, which are residuals related to the growth conditions. The 1100 °C N2 annealed sample is fully compensated, and the neutral donor resonance is no longer observed. Our results directly confirm the thermal instability of Ga and Sn in n-type conducting samples. No oxygen vacancy related centers were detected. We discuss the various Ga vacancy centers reported previously. [ABSTRACT FROM AUTHOR]

Ice nucleation particles play a crucial role in atmospheric processes; for example, they can trigger ice formation in clouds and thus influence their lifetime and optical properties. The quantification and characterization of these particles require reliable and precise measurement techniques. In this publication, we present a novel droplet freezing instrument to measure the immersion freezing of biotic and abiotic ice-nucleating particles within the temperature range of 0 to - 25 °C. Immersion freezing of the samples is investigated using 384-well PCR plates with a sample volume of 30 µL. Nucleation events are detected with high precision using a thermal camera that records the increase in infrared emission due to the latent heat release. To maximize the thermal contact between the PCR plate and the surrounding cooling unit, we use a gallium bath as a mount for the PCR plate. The instrument was validated relative to a calibrated temperature standard and through reproducibility measurements employing the same suspension. We find that the combination of good thermal connectivity and precise temperature recording enables accurate (± 0.81 °C at - 10 °C) and reproducible (± 0.20 °C) detection of the nucleation temperatures. Consequently, the results that are produced using the MICROtiter-Plate-based instrument for Ice Nucleation detection in GalliUm with an INfrared camera (micro-PINGUIN) are of good quality and the instrument can be used to study the immersion freezing of various ice-nucleating particles. For comparison with already existing instruments, Snomax® (hereafter Snomax) and illite NX suspensions are measured with the new ice nucleation instrument, micro-PINGUIN. Further, we investigated the reproducibility of experiments using Snomax suspensions and found poor reproducibility when suspensions were prepared freshly even if the same batch of Snomax is used. This could be attributed to substrate heterogeneity, aging effects, and dilution errors. The reproducibility of the measurements is greatly improved for Snomax suspensions that are prepared in advance and stored frozen in aliquots. Thus, we suggest the use of suspensions frozen in aliquots for further reproducibility measurements and intercomparison studies. [ABSTRACT FROM AUTHOR]

Gallium (Ga) and germanium (Ge) critical elements have a wide range of applications and market value. Extracting critical elements from coal gangue and combustion products can alleviate pressures on primary mining resources. Understanding the transformation behavior of Ga and Ge during coal gangue combustion processes is significant for resource utilization and environmental protection. Coal gangue from Xing'an League, Inner Mongolia, was chosen to explore how combustion temperatures (600 °C to 1000 °C) and particle sizes (50, 80, 10, 140, and 200 mesh) influence Ga and Ge migration during combustion. Techniques such as ICP-MS, XRD, XRF, SEM, TG-DSC, and sequential chemical extraction were employed to analyze the transformation of minerals and to quantify the contents and occurrence forms of Ga and Ge. Smaller gangue particle sizes were associated with higher concentrations of Ga and Ge. Approximately 99.19% of Ga and Ge in coal gangue were found in the residual, organic/sulfide-bound, and metal-oxide-bound modes. High temperatures promoted element volatilization and changed the reactions and interactions between elements and minerals. As combustion temperatures rose from 600 °C to 1000 °C, Ga and Ge contents in the products declined progressively. Under high temperatures, minerals like kaolinite, illite, and pyrite in gangue converted to silicate glass phases, mullite, and hematite. Minerals like kaolinite, calcite, and pyrite melted, leading to increased cohesion and agglomeration in the products. Over 90% of Ga and Ge in the combustion products existed in the residual, organic/sulfide-bound, and metal-oxide-bound forms. Moreover, Ga was enriched in combustion products, with its content exceeding critical extraction levels. The results may provide a useful reference for developing critical elements enrichment, extraction, and separation technologies from coal gangue. [ABSTRACT FROM AUTHOR]

The increasing demand for multispectral information acquisition and the complexity of application environments have sparked a growing interest in broadband detection. However, achieving a high level of responsivity across a wide response range remains a significant challenge. Herein, an ultrasensitive broadband phototransistor based on hybrid photogating (HPG) structure is demonstrated, which consisted of a quasi‐2D beta‐phase gallium oxide (β‐Ga2O3) nanoflake as the carrier transport channel and a tellurium (Te) nanoflake as the photogating layer. Attributed to the strong doping influence of the Te nanoflake, a low off‐state current of pA level and a high on/off current ratio of ≈108 are obtained. Upon 255 nm wavelength illumination, the device exhibited an ultrahigh responsivity up to 3.82 × 106 A W−1 and a detectivity as high as 1.59 × 1014 Jones across a large gate voltage range. Notably, an exciting infrared response is obtained with a responsivity of 138 A W−1 and a detectivity of 3.70 × 109 Jones under the 1550 nm wavelength illumination, exclusively achievable when the gate voltage exceeded 4 V. Leveraging the gate‐tunable spectral response, an innovative model for secure optical communication was proposed. This work presents an efficient and feasible strategy for fabricating multifunctional optoelectronic devices. [ABSTRACT FROM AUTHOR]

Five pyrazagalloles bearing H and CH3 substituents on the gallium atom and/or in the pyrazole ring have been calculated. The theoretical results have been compared with literature results concerning geometries from the Cambridge Data Base with very good agreement. 1H and 13C NMR results from the literature, scarce, and unpublished from our group are also well reproduced from GIAO calculations. The most important conclusion from this work is the assignment to a pz3Ga3 trimer as the isomer present in the 1H NMR spectra of dimeric pyrazagalloles. A mechanism connecting dimers and trimers has been found and the transition states identified. [ABSTRACT FROM AUTHOR]

Atomic layer deposition was applied on mesoporous silica to synthesize a highly dispersed gallium oxide catalyst. This system was used as starting material to investigate different loadings of nickel in the dehydrogenation of propane under industrially relevant, Oleflex‐like conditions. The formation of NiGa alloys was confirmed by X‐ray diffraction analysis and electron microscopy. Surprisingly, the nanoalloys enhanced the selectivity towards C3H6 while decreasing the tendency for coking. Herein, in situ thermogravimetry, and measured mass fractions of carbon revealed that the coking rate was reduced by over 50 % compared to the pristine gallium oxide. Generally, the increased selectivity can be explained by the partial hydrogenation and reduction of the gallium oxide surface. The optimum temperature for the removal of deposited carbon was evaluated by a temperature programmed oxidation. Finally, the best‐performing Ni−GaOx catalyst was employed in a cycled experiment with periodic reaction and regeneration tests. After regeneration, the selected Ni−GaOx catalyst provided a higher yield of propylene compared to the unmodified gallium oxide. [ABSTRACT FROM AUTHOR]

Lewis superacids (LSA) are defined by a fluoride ion affinity (FIA) that exceeds that of SbF5, and are thus characterized as hard according to the HSAB concept. Soft superacidity was defined for compounds exceeding the hydride ion affinity (HIA) of B(C6F5)3. Herein we report on the synthesis of a Lewis acid being superacidic only on the soft regime: tris(pentafluoroethyl)indane, In(C2F5)3. It is accessible in the form of its dihydrate [In(C2F5)3(OH2)2]. An improved synthesis for the gallium analogue [Ga(C2F5)3(OH2)2] is also reported. Tris(pentafluoroethyl)indane dihydrate, [In(C2F5)3(OH2)2], was fully characterized by IR and NMR spectroscopy, as well as by single crystal X‐ray diffraction. Due to their stability and convenient accessibility, the hydrates are ideal starting compounds for the chemistry of tris(pentafluoroethyl)gallium and ‐indium compounds, for example hydroxogallates and ‐indates. An attempt to determine its gas‐phase structure and that of the gallium analogue by electron diffraction demonstrates that they lose water ligands upon evaporation. The energetics of these processes were predicted by quantum‐chemical calculations as was the nature of bonding in the free Lewis acids and their mono‐ and dihydrates. Furthermore, the synthesis and structural diversity of hydroxido tris(pentafluoroethyl) gallates and one indate are presented. [ABSTRACT FROM AUTHOR]

Radicals of the lightest group 13 element, boron, are well established and observed in numerous forms. In contrast to boron, radical chemistry involving the heavier group 13 elements (aluminum, gallium, indium, and thallium) remains largely underexplored, primarily attributed to the formidable synthetic challenges associated with these elements. Herein, we report the synthesis and isolation of planar and twisted conformers of a doubly CAAC (cyclic alkyl(amino)carbene)‐radical‐substituted dialane. Extensive characterization through spectroscopic analyses and X‐ray crystallography confirms their identity, while quantum chemical calculations support their open‐shell nature and provide further insights into their electronic structures. The dialane‐connected diradicals exhibit high susceptibility to oxidation, as evidenced by electrochemical measurements and reactions with o‐chloranil and a variety of organic azides. This study opens a previously uncharted class of dialuminum systems to study, broadening the scope of diradical chemistry and its potential applications. [ABSTRACT FROM AUTHOR]

Die Radikale des leichtesten Elements der Gruppe 13, Bor, sind gut bekannt und werden in zahlreichen Formen beobachtet. Im Gegensatz zu Bor ist die Radikalchemie mit den schwereren Elementen der Gruppe 13 (Aluminium, Gallium, Indium und Thallium) noch sehr wenig erforscht, was in erster Linie auf die synthetischen Herausforderungen zurückzuführen ist, die mit diesen Elementen verbunden sind. In diesem Artikel berichten wir über die Synthese und Isolierung planarer und verdrillter Konformere eines doppelt CAAC (cyclisches Alkyl(amino)carben)‐Radikal‐substituierten Dialans. Eine umfassende Charakterisierung durch spektroskopische Analysen und Röntgenkristallographie bestätigt ihre Identität, während quantenchemische Berechnungen ihren offenschaligen Charakter belegen und weitere Einblicke in ihre elektronischen Strukturen liefern. Die dialanverbrückten Diradikale weisen eine hohe Oxidationsanfälligkeit auf, wie elektrochemische Messungen sowie Reaktionen mit o‐Chloranil und einer Vielzahl organischer Azide zeigen. Diese Studie eröffnet eine bisher unbekannte Klasse von Dialuminiumsystemen und erweitert den Bereich der Diradikalchemie und ihrer möglichen Anwendungen. [ABSTRACT FROM AUTHOR]

Background: Steps have been taken by pharmaceutical companies to obtain marketing authorisation of PSMA ligands in the European Union. Since December 2022, Locametz® (PSMA-11, gozetotide) is licensed as kit for manual radiolabelling with gallium-68 and commercially available since mid-2023. The Summary of Product Characteristic (SmPC) describes manual radiolabelling with a maximum activity after radiolabelling of 1369 MBq. We aimed for radiolabelling with a higher activity to increase production efficiency, and thus, automated radiolabelling is strongly preferred over manual radiolabelling to reduce radiation exposure to personnel. The aim of this study was to develop and validate a method for automated radiolabelling of the Locametz® kit using ~ 2000 MBq of gallium-68 eluate for radiolabelling. Results: Automated radiolabelling of [68Ga]Ga-PSMA-11 using the Locametz® kit provided a product which complies to the Ph. Eur., had a shelf-life of 6 h at room temperature, and theoretically reduced radiation exposure 5.7 times. Radiolabelling with one and two generator(s) resulted in a radiochemical yield of 91–102% and 96–101% after preparation, respectively. The radiochemical purity ranged from 98.0 to 99.6% for radiolabelling with one generator and ranged from 98.4 to 99.3% for radiolabelling with two generators with similar stability. The activity of the final product was much higher when using two generators, 1961–2035 MBq compared to 740–1260 MBq, which leads to ~ 1.5 times more patient syringes available per preparation. Conclusion: Automated radiolabelling of [68Ga]Ga-PSMA-11 using the Locametz® kit with higher gallium-68 activity than specified in the SmPC results in a product that is in compliance with the Ph. Eur. monograph and has a shelf-life of 6 h at room temperature. Radiolabelling with two generators proved possible and resulted in a product with similar quality but with much higher efficiency. [ABSTRACT FROM AUTHOR]

Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray absorption fine structure reveals that a‐GaOx NSs possess lower tetrahedral Ga occupation (10%) compared to crystalline β‐Ga2O3 (50%). UV‒vis‒NIR diffuse reflectance spectra and magnetic hysteresis loops demonstrate broad absorption and weak ferromagnetism of a‐GaOx NSs, respectively. Density functional theory calculation further reveals sub‐gap states and spin polarization in a‐GaOx NSs. Moreover, combined with Mott–Schottky curves, photoluminescence and time‐resolved photoluminescence spectra inferred the effective suppression of carrier recombination via spin polarization of a‐GaOx NSs. The graphene/a‐GaOx NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring a dark current as low as 63 pA. All photogenerated carriers are in the depletion region of the photodetector favouring efficient charge separation. This photodetector exhibits a response time of τrise<60 ms and τfall<120 ms, and high specific detectivity 1013 Jones over 254–1064 nm light. [ABSTRACT FROM AUTHOR]

Suitable contacts to gallium oxide are a controversial topic with contact behavior depending heavily on the pre- and post-processing conditions. Especially for the extreme environment applications such as those involving high temperatures, contact chemistry is varied and severely lacks understanding. Herein, we report on conventional pure Au contacts to polycrystalline β-Ga2O3, used as Schottky contacts, and explore the origin of their near-failure at high temperature up to 850 °C. For this purpose, β-Ga2O3 with Au interdigitated electrodes is subjected to high temperature annealing and their interface chemistry is studied and correlated with device performance for solar-blind photodetection. Around the optimized temperature of 450 °C, the performance of the PDs is found to be maximum, whereas it reduces drastically at 850 °C. Physical damage to the electrodes along with the formation of intermetallic gold-gallium alloy is observed via XPS depth profile studies and found to be the reason for the near-failure of device at extreme conditions. Although the alloy formation begins to slightly appear at 650 °C and reduces the performance, still it does not lead to device breakdown. This study proves that unlike its counterparts GaN and GaAs, which have reported alloy formation at lower temperatures, β-Ga2O3 shows a higher resilience to the formation of Au–Ga alloy and can withstand higher temperatures before the actual device failure is reached. The proposed study shows the stability of standard metal contacts to Ga2O3 based devices, which have far-reaching implications for the future commercialization of wideband gap semiconductor based (opto)electronics. [ABSTRACT FROM AUTHOR]

2,4‐dimethylfuran has a rare disubstitution pattern in the five‐membered heterocyclic furan ring that is highly interesting chemically but challenging to access synthetically. We present a heterogeneously catalysed route to synthesise 2,4‐dimethylfuran from commonly available 2,5‐dimethylfuran using a zeolite packed‐bed flow reactor. As supported by DFT calculations, the reaction occurs inside the zeolite channels, where the acid sites catalyse proton transfer followed by migration of a methyl group. The zeotype Ga‐silicate (MFI type) appears superior to an aluminium‐containing ZSM‐5 by demonstrating higher selectivities and slower catalyst deactivation. This work provides new opportunities for the continuous valorisation of bio‐feedstock molecules in the perspective of the emerging biorefinery era. [ABSTRACT FROM AUTHOR]

Gallium (Ga), indium (In), and germanium (Ge) play an important role in the modern high-tech material field. Due to their low content and scattered distribution in the crust, and the increasing demand for these metals in recent years, their supply risks have sharply increased. Therefore, the recycling of these metals is of great significance. In this work, a systematic review was performed using the Web of Science, Scopus, MDPI, Elsevier, and Springer Link databases. The combined terms used for the search were Ga/In/Ge, extraction, separation, and recycling. After a careful evaluation of the titles, abstracts, and full texts, a total of 106 articles were included. This paper briefly describes the resource features of Ga, In, and Ge. After that, the chemical principles, technical parameters, and metal recovery in various extraction and separation methods from monometallic and polymetallic resources are systematically reviewed. Leaching followed by solvent extraction or ion exchange is the main process for Ga, In, and Ge recovery. Although many attempts have been made to separate multiple metals from leaching solutions, highly selective solvents and resins are still the research priority. This review can provide theoretical and technical guidance for the separation of Ga, In, and Ge from various resources. [ABSTRACT FROM AUTHOR]

This paper presents the zonal geochemistry and elasticity characteristics of gallium- and lithium-rich No. 6 coalbed in the Haerwusu mine and discusses interpretation methodologies of coal-hosted gallium and lithium resources using lab-measured samples and field-measured wireline logs. The results demonstrate that both coal-composition-based and elastic-parameter-based classifications yield similar results, categorizing the coalbed into subzones related to coal quality. Material compositions, elastic properties, critical metals, and host minerals exhibit zonal distribution characteristics within the ultrathick No. 6 coalbed. Three-class classifications significantly enhance correlations among host minerals, elastic parameters, and critical metals, albeit with differing trends among classes. In classes II and III (ultralow- and low-ash-yield coals), boehmite and kaolinite primarily host gallium and lithium, respectively. In class I (medium-ash-yield coal), gallium is associated with kaolinite, while lithium lacks specific mineral associations. Constrained by wireline logs, a rock physics modeling strategy is proposed to link mesoscale coal compositions to macroscale elastic responses. Moreover, explicit correlations between host minerals and critical metals are established, connecting macroscale elastic responses to microscale gallium and lithium enrichments and exploring interpretation methods of coal-hosted critical metals. Preferred lithium interpretation methods include compositional ternary plots and elastic parameter cross plots, while preferred gallium interpretation methods involve boehmite-gallium and elastic parameter-gallium fitting. These findings may contribute to understanding the enrichment mechanisms and interpretation technologies of coal-hosted critical metals in ultrathick low-rank coalbeds. [ABSTRACT FROM AUTHOR]

The emergence of multidrug-resistant (MDR) microorganisms combined with the ever-draining antibiotic pipeline poses a disturbing and immensely growing public health challenge that requires a multidisciplinary approach and the application of novel therapies aimed at unconventional targets and/or applying innovative drug formulations. Hence, bacterial iron acquisition systems and bacterial Fe2+/3+-containing enzymes have been identified as a plausible target of great potential. The intriguing "Trojan horse" approach deprives microorganisms from the essential iron. Recently, gallium's potential in medicine as an iron mimicry species has attracted vast attention. Different Ga3+ formulations exhibit diverse effects upon entering the cell and thus supposedly have multiple targets. The aim of the current study is to specifically distinguish characteristics of great significance in regard to the initial gallium-based complex, allowing the alien cation to effectively compete with the native ferric ion for binding the siderophores pyochelin and pyoverdine secreted by the bacterium P. aeruginosa. Therefore, three gallium-based formulations were taken into consideration: the first-generation gallium nitrate, Ga(NO3)3, metabolized to Ga3+-hydrated forms, the second-generation gallium maltolate (tris(3-hydroxy-2-methyl-4-pyronato)gallium), and the experimentally proven Ga carrier in the bloodstream—the protein transferrin. We employed a reliable in silico approach based on DFT computations in order to understand the underlying biochemical processes that govern the Ga3+/Fe3+ rivalry for binding the two bacterial siderophores. [ABSTRACT FROM AUTHOR]

Here, a novel aluminum-gallium-phosphate (GAHPO) metal-inorganic framework structure was prepared by hydrothermal method, and it was fully characterized by single crystal X-ray diffraction, powder X-ray diffraction, IR spectroscopy, and gravimetric analysis-differential scanning calorimeter (TG-DSC). Single crystal X-ray diffraction results show that GAHPO is attributed to the trigonal system and Rc3 space group. Al(Ga) O6 octahedra and PO4 tetrahedral structures is distorted to form one-dimensional chains, and then is stacked into three-dimensional metal-inorganic frameworks through hydrogen bonding. TG-DSC shows that GAHPO is of high thermal stability, with the initial decomposition temperature of 240 ²C. Compared with aluminum phosphate, the introduction of Ga3+ distorted the AlPO4 lattice, thus weakening and elongating the Al--O bond, which makes more acid catalytic sites exposed and enhanced the catalytic activity. The experiment shows that when the reaction temperature is 60 ²C, and the catalyst dosage is 10% of acetaldehyde, GAHPO could catalyze the condensation of acetaldehyde to produce butanolal with good conversion rate (47%) and excellent selectivity ( >99%). The reaction mechanism of acetaldehyde condensation catalyzed by GAHPO was investigated using scavengers, NH3-TPD and specially designed derivatives to confirm the reactive sites of the catalyst and the substrate. This work provides a feasible way for novel aluminum inorganic framework structures and the catalytic applications. [ABSTRACT FROM AUTHOR]

Summary: Standard CHOP treatment includes a high cumulative dose of prednisone, and studies have shown increased fracture risk following CHOP. It is unclear whether reductions in bone mineral density (BMD) are caused by glucocorticoids or by the combination with chemotherapy. Our objective was to determine the effect of obinutuzumab (G)/rituximab (R)‐bendamustine versus G/R‐CHOP on BMD in follicular lymphoma patients. Patients in this GALLIUM post hoc study were ≥60 years old and in complete remission at induction treatment completion (ITC), following treatment with G or R in combination with bendamustine or CHOP. To assess BMD, Hounsfield units (HU) were measured in lumbar vertebra L1 on annual computed tomography. Furthermore, vertebral compression fractures were recorded. Of 173 patients included, 59 (34%) received CHOP and 114 (66%) received bendamustine. At baseline, there was no difference in HU between groups. The mean HU decrease from baseline to ITC was 27.8 after CHOP and 17.3 after bendamustine, corresponding to a difference of 10.4 (95% CI: 3.2–17.6). Vertebral fractures were recorded in 5/59 patients receiving CHOP and in 2/114 receiving bendamustine. CHOP was associated with a significant greater decrease in BMD and more frequent fractures. These results suggest that prophylaxis against BMD loss should be considered. [ABSTRACT FROM AUTHOR]

Given the scarcity of novel antibiotics, the eradication of bacterial biofilm infections poses formidable challenges. Upon bacterial infection, the host restricts Fe ions, which are crucial for bacterial growth and maintenance. Having coevolved with the host, bacteria developed adaptive pathways like the hemin‐uptake system to avoid iron deficiency. Inspired by this, we propose a novel strategy, termed iron nutritional immunity therapy (INIT), utilizing Ga‐CT@P nanocomposites constructed with gallium, copper‐doped tetrakis (4‐carboxyphenyl) porphyrin (TCPP) metal–organic framework, and polyamine‐amine polymer dots, to target bacterial iron intakes and starve them. Owing to the similarity between iron/hemin and gallium/TCPP, gallium‐incorporated porphyrin potentially deceives bacteria into uptaking gallium ions and concurrently extracts iron ions from the surrounding bacteria milieu through the porphyrin ring. This strategy orchestrates a "give and take" approach for Ga3+/Fe3+ exchange. Simultaneously, polymer dots can impede bacterial iron metabolism and serve as real‐time fluorescent iron‐sensing probes to continuously monitor dynamic iron restriction status. INIT based on Ga‐CT@P nanocomposites induced long‐term iron starvation, which affected iron‐sulfur cluster biogenesis and carbohydrate metabolism, ultimately facilitating biofilm eradication and tissue regeneration. Therefore, this study presents an innovative antibacterial strategy from a nutritional perspective that sheds light on refractory bacterial infection treatment and its future clinical application. [ABSTRACT FROM AUTHOR]

Given the scarcity of novel antibiotics, the eradication of bacterial biofilm infections poses formidable challenges. Upon bacterial infection, the host restricts Fe ions, which are crucial for bacterial growth and maintenance. Having coevolved with the host, bacteria developed adaptive pathways like the hemin‐uptake system to avoid iron deficiency. Inspired by this, we propose a novel strategy, termed iron nutritional immunity therapy (INIT), utilizing Ga‐CT@P nanocomposites constructed with gallium, copper‐doped tetrakis (4‐carboxyphenyl) porphyrin (TCPP) metal–organic framework, and polyamine‐amine polymer dots, to target bacterial iron intakes and starve them. Owing to the similarity between iron/hemin and gallium/TCPP, gallium‐incorporated porphyrin potentially deceives bacteria into uptaking gallium ions and concurrently extracts iron ions from the surrounding bacteria milieu through the porphyrin ring. This strategy orchestrates a "give and take" approach for Ga3+/Fe3+ exchange. Simultaneously, polymer dots can impede bacterial iron metabolism and serve as real‐time fluorescent iron‐sensing probes to continuously monitor dynamic iron restriction status. INIT based on Ga‐CT@P nanocomposites induced long‐term iron starvation, which affected iron‐sulfur cluster biogenesis and carbohydrate metabolism, ultimately facilitating biofilm eradication and tissue regeneration. Therefore, this study presents an innovative antibacterial strategy from a nutritional perspective that sheds light on refractory bacterial infection treatment and its future clinical application. [ABSTRACT FROM AUTHOR]

Investigations on binary lead‐bearing glass systems have shown that Pb2+ functions as a charge compensator at low concentrations and can participate in network formation at higher loadings. We use multinuclear magnetic resonance spectroscopy to investigate the mechanism underlying this dual‐role nature of Pb2+ in ternary lead‐borate glasses containing aluminum or gallium. 207Pb nuclear magnetic resonance (NMR) spectra—in conjunction with charge‐balance calculations, bond‐valence principles, and precedents from crystalline lead‐borates—are interpreted in terms of high‐ and low‐coordinate Pb2+ species, representing charge‐compensating "network modifier" sites and covalently‐bound "network forming" sites, respectively. Both high‐field 27Al and 71Ga magic‐angle spinning NMR spectra indicate the presence of substantial fractions of four, five, and six‐fold coordinated Al/Ga, reinforcing the isostructural nature of these elements. However, systematic differences in the boron speciation in Al‐ and Ga‐bearing glasses reveal that their size difference has a measurable effect on the short‐range structure in these glasses. [ABSTRACT FROM AUTHOR]

Gallaphosphene L(Cl)GaPGaL 1 (L=HC[C(Me)N(Ar)]2; Ar=2,6‐iPr2C6H3) reacts with N‐heterocyclic carbenes RNHC (RNHC=[CMeN(R)]2C; R=Me, iPr) to RNHC‐coordinated phosphinidenes RNHC→PGa(Cl)L (R=Me 2 a, iPr 2 b) and with isonitriles RNC (R=iPr, Cy) to 1,3‐phosphaazaallenes L(Cl)GaP=C=N−R (R=iPr 3 a, Cy 3 b), respectively. Quantum chemical calculations reveal that 2 a/2 b possess two localized lone pair of electrons, whereas 3 a/3 b only show one localized lone pair as was reported for gallaphosphene 1. 2 b reacts with 2.5 equivalents of a borane (THF ⋅ BH3) to the NHC‐stabilized phosphinidene‐borane complex [iPrNHC→P(BH2)]2(BH3)34 with concomitant formation of LGa(H)Cl 5. 2–5 are characterized by heteronuclear (1H, 13C{1H}, 31P{1H}) NMR and IR spectroscopy, elemental analysis, and single crystal X‐ray diffraction (sc‐XRD). [ABSTRACT FROM AUTHOR]

The interplay of two proximate gallium centres equips the bimetallic complex CyL2Ga2 (1, CyL2 = 1,2-trans-Cy[NC(Me)C(H)C(Me)N(Dip)]2, Dip = 2,6-i-Pr2C6H3) with increased Lewis basicity and higher reducing power compared to the monometallic gallanediyl LGa (2, L = HC[MeCN(Dip)]2) as evidenced by cross-over experiments. Quantum chemical calculations were employed to support the experimental findings. [ABSTRACT FROM AUTHOR]

Given the ever-increasing demand for gallium(III) as a crucial precursor in the fabrication of advanced materials, there arises an imperative to devise efficient recovery processes from primary and secondary sources. In the present investigation, the retrieval of gallium(III) from aqueous solutions through the mechanism of adsorption was investigated. Materials with superior adsorbent properties play an important role in the dynamics of the adsorption process. To enhance these properties, select materials, such as Amberlite-type polymeric resins, are amenable to functionalization through impregnation with extractants featuring specialized active groups, designed for the selective recovery of metal ions—specifically, Ga(III). The impregnation method employed in this study is the Solvent-Impregnated Resin (SIR) method, utilizing the amino acid DL-valine as the extractant. The new material was characterized through Scanning Electron Microscopy (SEM), Elemental Analysis via X-ray energy-dispersive spectroscopy (EDX), and Fourier transform infrared spectroscopy (FTIR) to elucidate the presence of the extractant on the resin's surface. Concurrently, the material's pHPZC was determined. The adsorptive prowess of the synthesized material was investigated through kinetic, thermodynamic, and equilibrium studies. The influence of specific parameters in the adsorption process—namely, pH, contact time, temperature, and Ga(III) initial concentration—on the maximal adsorption capacity was determined. The optimal adsorption conditions were established using the Taguchi method. [ABSTRACT FROM AUTHOR]

Molten gallium trichloride emerges as a promising solvent for oxidative metal recycling. The use of supercritical fluid enhances the performance and kinetics of metal dissolution due to significantly lower viscosity in the reaction media. Additionally, the dual molecular nature of gallium trichloride, existing as edge-sharing ES-Ga2Cl6 dimers at low temperatures and high pressure, or flat trigonal GaCl3 monomers in the vicinity of the critical point and low pressures, creates the possibility to tailor the chemical geometry to a particular metallic species. Nevertheless, the mechanism of dimer dissociation, local structure, and atomic dynamics in supercritical gallium trichloride fluids are not known. Using first-principles molecular dynamics, validated by comparison with our high-energy X-ray diffraction results, we illustrate the elementary steps in dimer dissociation. These include the formation of intermediate corner-sharing CS-Ga2Cl6 dimers, the partial disproportionation of GaCl3 monomers at high temperatures and low pressures, changes in the local environment of molecular entities, and unusual atomic dynamics in supercritical fluids. [ABSTRACT FROM AUTHOR]

A library of homoleptic mononuclear Ga(III) complexes of the general formula [Ga(DTC)3], where DTC is an alicyclic or a linear dithiocarbamate chelator, is reported. The complexes were prepared in high yields starting from Ga(NO3)3·6H2O and fully characterized by elemental analysis and IR and NMR spectroscopy. Crystals of five of these complexes were obtained. The antitumor activity of the newly synthesized compounds against a panel of human cancer cell lines was evaluated. The chemical nature of the DTC does not have a marked impact on the structural features of the final compound. X-ray crystal structure analyses revealed that all these complexes have a trigonal prismatic geometry with three identical chelating DTCs coordinating the Ga(III) ion. It is noteworthy that in complex 22, [Ga(NHEt)3] (NHEt = N-ethyldithiocarbamate), the asymmetric unit is formed by two independent and structurally different molecules. Cellular studies showed that all the synthesized Ga-DTC complexes exhibit marked cytotoxic activity, even against human colon cancer cells that are less sensitive to cisplatin. Among the tested compounds, 6 ([Ga(CEPipDTC)3], CEPipDTC = (ethoxycarbonyl)-piperidinedithiocarbamate) and 21 ([Ga(Pr-13)3], PR13 = 4 and N-(2-ethoxy-2-oxoethyl)-N-methyldithiocarbamate) are very promising derivatives, but they have no selectivity towards cancer cells. Nevertheless, the obtained data provide a foundation for developing gallium-dithiocarbamate complexes as anticancer agents. [ABSTRACT FROM AUTHOR]

The aim of this work was to compare anatomic and functional dose-volume parameters as predictors of acute radiation-induced lung toxicity (RILT) in patients with lung tumors treated with stereotactic body radiation therapy. Fifty-nine patients treated with stereotactic body radiation therapy were prospectively included. All patients underwent gallium 68 lung perfusion positron emission tomography (PET)/computed tomography (CT) imaging before treatment. Mean lung dose (MLD) and volumes receiving x Gy (VxGy, 5-30 Gy) were calculated in 5 lung volumes: the conventional anatomic volume (AV) delineated on CT images, 3 lung functional volumes (FVs) defined on lung perfusion PET imaging (FV50%, FV70%, and FV90%; ie, the minimal volume containing 50%, 70%, and 90% of the total activity within the AV), and a low FV (LFV; LFV = AV − FV90%). The primary endpoint of this analysis was grade ≥2 acute RILT at 3 months as assessed with National Cancer Institute Common Terminology Criteria for Adverse Events version 5. Dose-volume parameters in patients with and without acute RILT were compared. Receiver operating characteristic curves assessing the ability of dose-volume parameters to discriminate between patients with and without acute RILT were generated, and area under the curve (AUC) values were calculated. Of the 59 patients, 10 (17%) had grade ≥2 acute RILT. The MLD and the VxGy in the AV and LFV were not statistically different between patients with and without acute RILT (P >.05). All functional parameters were significantly higher in acute RILT patients (P <.05). AUC values (95% CI) for MLD AV, LFV, FV50%, FV70%, and FV90% were 0.66 (0.46-0.85), 0.60 (0.39-0.80), 0.77 (0.63-0.91), 0.77 (0.64-0.91), and 0.75 (0.58-0.91), respectively. AUC values for V20Gy AV, LFV, FV50%, FV70%, and FV90% were 0.65 (0.44-0.87), 0.64 (0.46-0.83), 0.82 (0.69-0.95), 0.81 (0.67-0.96), and 0.75 (0.57-0.94), respectively. The predictive value of PET perfusion-based functional parameters outperforms the standard CT-based dose-volume parameters for the risk of grade ≥2 acute RILT. Functional parameters could be useful for guiding radiation therapy planning and reducing the risk of acute RILT. [ABSTRACT FROM AUTHOR]

The first examples of tetrasubstituted conjugated bis‐guanidinate (CBG) supported monomeric and thermally stable gallium dihalides [LGaX2], (X=Cl (Ga−Cl), I (Ga−I)) and dihydride (Ga−H) [LGaH2] (where L={(ArHN)(ArN)−C=N−C=(NAr)(NHAr)}; Ar=2,6‐Et2−C6H3) compounds are reported. The reaction of in situ generated LLi with 1.0 equiv. GaX3 (X=Cl, I) afforded compounds Ga−Cl and Ga−I. The reaction between Ga−Cl and Li[HBEt3] in benzene yielded the dihydride compound Ga−H. All reported compounds (Ga−Cl, Ga−I, and Ga−H) were characterized by NMR, HRMS, and single‐crystal X‐ray diffraction studies. Ga−H was probed for the hydroboration of carbodiimides (CDI), isocyanates, and isothiocyanates with HBpin. Compound Ga−H was also found effective for the catalytic hydroboration of imines, nitriles, alkynes, esters, and formates, affording the corresponding products in quantitative yields. Stoichiometric reactions with a CDI were performed to establish the catalytic cycle. [ABSTRACT FROM AUTHOR]

Wide bandgap gallium oxide thin-film transistor (TFT) is promising for next-generation sustainable energy-efficient power electronics. In particular, amorphous oxide channel exhibits inherent advantages on mass productions based on a low-temperature processability compatible with cost-effective large-sized glass. Here, we developed hydrogen defect termination to produce amorphous-GaOx (a-GaOx) channel for n-channel oxide-TFT and demonstrated high-mobility a-GaOx-TFT exhibiting a high saturation mobility (μsat) of ∼31 cm2 V−1 s−1, threshold voltage (Vth) of ∼3.3 V, a current on/off ratio of ∼108, and subthreshold swing value (s-value) of ∼1.17 V·dec−1. The study found that oxygen conditions during the channel fabrication process, i.e., oxygen partial pressure during the film deposition and post-thermal annealing atmospheres, were critical for the TFT performances of gallium oxide-TFTs, and subgap defects originated from low-valence Ga+ state and excess oxygen rather than oxygen vacancy had a large responsibility for the device performances. The finding explains why the development of gallium oxide-TFTs is largely behind the other oxide-TFTs. We also fabricated depletion and enhancement-mode a-GaOx-TFTs and developed a full-swing zero-VGS-load inverter with high voltage gain ∼200 and sufficient noise margins. The present study demonstrates a high potential of gallium oxide channel for low-temperature processed n-channel oxide-TFT for next-generation electronic applications. [ABSTRACT FROM AUTHOR]

Quantum‐chemical (DFT) calculations on hitherto unknown base(carbene)‐stabilized gallium monoiodides (LB→GaI) suggest that these systems feature one lone pair of electrons and a formally vacant p‐orbital – both centered at the central gallium atom – and exhibit metallomimetic behavior. The calculated reaction free energies as well as bond dissociation energies suggest that these LB→GaI systems are capable of forming stable donor‐acceptor complexes with group 13 trichlorides. Examination of the ligand exchange reactions with iron and nickel complexes indicates their potential use as ligands in transition metal chemistry. In addition, it is found that the title compounds are also able to activate various enthalpically robust bonds. Further, a detailed mechanistic investigation of these small molecule activation processes reveals the non‐innocent behavior of the carbene (base) moiety attached to the GaI fragment, thereby indicating the cooperative nature of these bond activation processes. The energy decomposition analysis (EDA) and activation strain model (ASM) of reactivity were also employed to quantitatively understand and rationalize the different activation processes. [ABSTRACT FROM AUTHOR]

Reactions of LGa(Cl)P(cAAC) (L=HC[C(Me)N(2,6‐iPr2C6H3)]2, MecAAC (MecAAC=1‐(2,6‐di‐iso‐propylphenyl)‐3,3,5,5‐tetramethyl‐pyrrolidin‐2‐ylidene) with NaPCO and NaN3 gave LGa(PCO)P(MecAAC) (1) and LGa(N3)P(MecAAC) (2), respectively. DFT calculations on the nature of compounds 1 and 2 reveal a phosphaalkene rather than a carbene‐phosphinidene structure. The reaction of 1 with MecAAC resulted in a nucleophilic attack of the electron‐rich P atom on the γ‐C backbone of the β‐diketiminate ligand to give compound 3 as the major product and cyclic 1,2‐diphospha‐1,3‐butadiene LGa(P2OC)MecAAC (4) in minor yield. [ABSTRACT FROM AUTHOR]

Poorly selective mixed-metal cluster synthesis and separation yield reaction solutions of inseparable intermetalloid cluster mixtures, which are often discarded. High-resolution mass spectrometry, however, can provide precise compositional data of such product mixtures. Structure assignments can be achieved by advanced computational screening and consideration of the complete structural space. Here, we experimentally verify structure and composition of a whole cluster ensemble by combining a set of spectroscopic techniques. Our study case are the very similar nickel/gallium clusters of M12, M13 and M14 core composition Ni6+xGa6+y (x + y ≤ 2). The rationalization of structure, bonding and reactivity is built upon the organometallic superatom cluster [Ni6Ga6](Cp*)6 = [Ga6](NiCp*)6 (1; Cp* = C5Me5). The structural conclusions are validated by reactivity tests using carbon monoxide, which selectively binds to Ni sites, whereas (triisopropylsilyl)acetylene selectively binds to Ga sites. Mixed-metal cluster generating reaction solutions contain several species of similar composition and structure that often result in hard-to-separate product mixtures. Here, the authors analyze elemental compositions obtained via high-resolution mass spectrometry with a computational permutative approach and assign individual structures of nickel gallium intermetalloid clusters without the need to isolate pure clusters. [ABSTRACT FROM AUTHOR]

The introduction of a number of unsaturated fluorinated and chlorinated substituents onto gallium and indium was investigated. Gallate, [GaR4]−, and indate, [InR4]−, anions with trifluorovinyl (CF=CF2), 1‐chloro‐2,2‐difluorovinyl (CCl=CF2), (E)‐pentafluoropropen‐1‐yl (E‐CF=CFCF3), 3,3,3‐trifluoropropynyl (C≡C−CF3) and dichloromethyl (CHCl2) substituents were synthesized and isolated as the respective tetraphenylphosphonium salts. The respective gallate and indate salts were characterized by various methods, including NMR spectroscopy, mass spectrometry and X‐ray diffraction analysis. The generation of the respective organyllithium reagents, required for the syntheses of the gallate and indates, was performed starting from commercially available materials. This series of novel gallate and indate salts extends the chemistry of electron withdrawing groups to gallium and indium compounds. [ABSTRACT FROM AUTHOR]

The reactions of bimetallic acenaphthene-1,2-diimine complex [(Dpp-bian-GaCr(CO)5]2-[Na(Thf)2]2 (I) (Dpp-bian = 1,2-bis[(2,6-diisopropylphenyl)imino]acenaphthene) with 4,4'-bipyridine (4,4'-Bipy) and 1,3-bis(4-pyridyl)propane (Bpp) in THF gave 3D coordination polymers [{(Dpp-bian)GaCr(CO)5}{Na(4,4'-Bipy)3}]n (II) and [(Dpp-bian)GaCr(CO)4Na(Et2O)(Bpp)1,5]n (III), respectively. Compounds II and III were characterized by elemental analysis and NMR and IR spectroscopy. The molecular structure of II was established by X-ray diffraction (CCDC no. 2278024). [ABSTRACT FROM AUTHOR]

The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure. [ABSTRACT FROM AUTHOR]

In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated, compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation is optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. Ultraviolet–visible–near‐infrared spectroscopy and photo response of thin film unveil that gallium oxide thin film is responsive to ultraviolet wavelengths including deep ultraviolet‐C and ultraviolet‐B bands and the mist‐generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It is observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultrasmooth thin film with root mean square value of 0.628 nm; which is closer and/or better than conventional semiconductor thin‐film deposition processes used for depositing Ga2O3. [ABSTRACT FROM AUTHOR]

Highly reliable atomic layer deposition (ALD)‐derived In‐Ga‐Zn‐O thin‐film transistors with high field‐effect mobility (μFE) and hydrogen (H) resistivity are crucial for the semiconductor industry. Herein, a hybrid Al2O3 gate insulator (GI) is proposed that is designed by controlling the plasma‐enhanced ALD and thermal ALD processes in situ to demonstrate robust characteristics. A hybrid GI is applied to the top‐gate geometry of an In0.71Ga0.08Zn0.21O active layer. The optimal device exhibits exceptional electrical characteristics, including a threshold voltage of 0.37 V, μFE of 150.7 cm2 V s−1, subthreshold swing of 64.0 mV decade−1, and hysteresis of 0.02 V. It demonstrates high resistance to H annealing and reliable positive bias temperature stress, as well as changes in VTH shifts of −0.43 and 0.00 V, respectively. The excellent electrical characteristics and high robustness of the device can be attributed to the precise control of H, oxygen, and carbon species within the upper region of the hybrid GI. The achievement of robust device characteristics enables the design of a novel vertical complementary metal‐oxide‐semiconductor inverter that exhibits a voltage gain of 44.7 V V−1 and a noise margin of 87.5% at a 10 V supply voltage. [ABSTRACT FROM AUTHOR]

Phosphoric acid (H 3 PO 4) was proposed to replace sulfuric acid (H 2 SO 4) for the efficient gallium (Ga) leaching from red mud (RM). The effects of different leaching reagents were compared, and the influence of experiment conditions on the leaching was investigated. The results show that H 3 PO 4 has the best leaching effect. The efficiency of Ga leaching was 95.9% at the leaching temperature of 100 °C, H 3 PO 4 concentration of 10 mol/L, time of 6 h, liquid-to-solid ratio of 9:1, and stirring speed of 400 rpm. With H 3 PO 4 , the efficiency of Ga leaching was increased by 5% compared with the H 2 SO 4 system. The adsorption of Ga3+ by polysilicic acid generated under H 2 SO 4 leads to the Ga3+ entering the residue. Thermodynamic have clarified that Ga can be enriched into the leach liquor, as the leaching reaction is spontaneous. Finally, the reaction kinetic equation for the leaching process of Ga under the H 3 PO 4 system was [(1- α)−1/3-1]+ 1/3ln(1- α)= 203.296 C2.44exp(−40539/R T)t. This study improves the recovery of Ga from RM. The residue can be utilized for preparing mineral fertilizers, realizing the harmless utilization of RM. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) show a great promise for high-efficiency and cost-effective photovoltaic devices. This study focuses on the use of beta-gallium oxide (β-Ga2O3) as a versatile component in PSCs. β-Ga2O3 serves as the electron transport layer (ETL), a window material that reduces reflection of visible light, a UV absorption layer for perovskite stability, and a hole blocking layer (HBL) due to its high valence band-offset. Additionally, a bilayer of cuprous oxide/silicon (Cu2O/p-Si) is employed as the hole transport and electron blocking layer (HTL and EBL), while methylammonium lead iodide (CH3NH3PbI3) serves as the perovskite absorber. Numerical simulations using SILVACO-TCAD demonstrate that replacing ZnO with β-Ga2O3 as the ETL leads to a significant enhancement in PSC performance. The optimized device exhibits a power conversion efficiency (PCE) of 23.02%, an open circuit voltage (Voc) of 0.95 V, a short circuit current density (Jsc) of 31.12 mA/cm2, and a fill factor (FF) of 77.53%. The study highlights the benefits of using β-Ga2O3 and Cu2O/p-Si in PSCs, emphasizing their crucial role in improving device performance. Our findings will help perovskite solar cells designers to eliminate one of the causes of stability which is UV radiations by absorption utilizing a β-Ga2O3 layer at the front and which acts as an ETL and a window as well, hence contributing to material and cost reduction. The Cu2O/p-Si used as an HTL the PSC achieve a PCE close to the Shockley–Queisser limit which is 26.6%. [ABSTRACT FROM AUTHOR]

The dehydrogenation of propane over Pt supported on Ga-doped silica was investigated, using various meso- and microporous silica supports. The addition of a small amount of Ga (0.5 wt%) to SBA-15 was enough to boost the resultant 1 wt% Pt catalyst's conversion from < 5 up to 38%. Propene selectivity also increased from around 60 to 98%. Optimisation of the Pt and Ga content revealed that low loadings of both active components are necessary to increase the efficiency of the reaction and beyond this only modest improvements in performance were obtained. A range of pore structures were investigated, but the Ga content was found to be more important than the support morphology; without sufficient Ga incorporation into the support the catalyst could not achieve high conversion and selectivity. Post-reaction analysis suggested that coke formation blocking sites was the most likely explanation for catalyst deactivation. These results show that doping Ga into SiO2 as a support for Pt nanoparticles is a viable strategy for producing highly efficient catalysts for propane dehydrogenation. [ABSTRACT FROM AUTHOR]

Theoretical evaluation of gallium nano-clusters decorated with certain metalloids (B, Si and Ge) ( Ga 1 2 X 1 2 , where X = N, O) as proficient adsorbents for 2,4-dichloropropionic acid (Dal) was conducted using the DFT/ ω B97X-D functional with a 6-311++G(d,p) basis set. Notably, the Ga 1 2 O 1 2 -decorated nano-structures demonstrated superior efficiency compared to their Ga 1 2 N 1 2 counterparts. In the analysis of electronic structure, Ga@Si_Dal (GS2) exhibited a narrow band gap of 3.237 eV between the conduction and valence bands, signifying heightened system conductivity. For the adsorption system, Ga@Si_Dal (GS2) displayed an adsorption distance of 2.45400 Å, with the most stable optimal value of −2159.31 upon Dal adsorption. GaN@B_Dal (B1) exhibited the shortest bond length at 1.267 Å. The computed adsorption energy values for comparative assessment were universally negative, indicating robust interaction between adsorbent and adsorbate. GaO@Ge_Dal (GG2) boasted the most negative adsorption energy at −4.811 kcal/mol when compared with other decorated surfaces. The study underscored GaO@Si_Dal (GS2) as possessing a more potent non-covalent interaction than other adorned surfaces, as substantiated by its higher electron density and Laplacian of electron density. This research offers valuable insights for both researchers and industrialists engaged in combating environmental pollution. Theoretical evaluation of gallium nano-clusters decorated with certain metalloids (B, Si, and Ge) ( Ga 1 2 X 1 2 , where X = N, O) as proficient adsorbents for 2,4-dichloropropionic acid (Dal) was conducted using the DFT/ ω B97X-D functional with a 6-311++G(d,p) basis set. [ABSTRACT FROM AUTHOR]

The demand for information processing at ultrahigh speed with large data transmission capacity is continuously rising. Necessary building blocks for on‐chip photonic integrated circuits (PICs) are reconfigurable integrated low‐loss high‐speed modulators and switches. Phase change materials (PCMs) provide unique opportunities for integration into PICs. Here, the investigation of layered gallium monosulfide (GaS) as a novel low‐loss PCM from infrared to optical frequencies is pioneered, with high index contrast (Δn ≈0.5) at the optical telecommunication band. The GaS bandgap switches from 1.5 ± 0.2 eV for the amorphous state to 2.1 ± 0.1 eV for the crystalline state. It is demonstrated that the reversible GaS amorphous‐to‐crystalline phase transition can be operated thermally and by picosecond green (532 nm) laser irradiation. The design of a reconfigurable integrated optical modulator on‐chip based on Mach‐Zehnder Interferometers (MZI) with the GaS PCM cell deposited on one of the arms for application is presented at the telecommunication wavelength of λ = 1310 nm, where the standard single mode optical fiber exhibits zero chromatic dispersion, and at λ = 1550 nm, where a minimum optical loss of 0.22 dB km−1 is obtained. This opens the route to applications such as reconfigurable modulators, beam steering using phase modulation, and photonic neural networks. [ABSTRACT FROM AUTHOR]

We report on so‐called "hidden FLPs" (FLP: frustrated Lewis pair) consisting of a phosphorus ylide featuring a group 13 fragment in the ortho position of a phenyl ring scaffold to form five‐membered ring structures. Although the formation of the Lewis acid/base adducts was observed in the solid state, most of the title compounds readily react with carbon dioxide to provide stable insertion products. Strikingly, 0.3–3.0 mol% of the reported aluminum and gallium/carbon‐based ambiphiles catalyze the reduction of CO2 to methanol with satisfactory high selectivity and yields using pinacol borane as stoichiometric reduction equivalent. Comprehensive computational studies provided valuable mechanistic insights and shed more light on activity differences. [ABSTRACT FROM AUTHOR]

We present the easy and high yield synthesis of several group 13 MesDPM compounds (Al–In) with alkyl substituents at the metal atom. All these compounds were fully characterized using techniques including X-ray diffraction analysis and photoluminescence measurements. It shows that for aluminium and gallium pronounced green fluorescence is observed, which is absent for indium. DFT calculations confirm that the first electronic transition corresponds to a ligand-based π–π* transition. [ABSTRACT FROM AUTHOR]

A swarf of aluminum alloy with high corrosion resistance and ductility was successfully converted into fine hydro reactive powders via ball milling with silver powder and either lithium chloride or gallium. The latter substances significantly intensified particle size reduction, while silver formed 'cathodic' sites (Ag, Ag2Al), promoting Al corrosion in aqueous saline solutions with hydrogen generation. The diffraction patterns, microphotographs, and elemental analysis results demonstrated partial aluminum oxidation in the samples and their contamination with tungsten carbide from milling balls. Those factors were responsible for obtaining lower hydrogen yields than expected. For AlCl3 solution at 60 °C, Al–LiCl–Ag, Al–LiCl, Al–Ga–Ag, and Al–Ga composites delivered (84.6 ± 0.2), (86.8 ± 1.4), (80.2 ± 0.5), and (76.7 ± 0.7)% of the expected hydrogen, respectively. Modification with Ag promoted Al oxidation, thus providing higher hydrogen evolution rates. The samples with Ag were tested in a CaCl2 solution as well, for which the reaction proceeded much more slowly. At a higher temperature (80 °C) after 3 h of experiment, the corresponding hydrogen yields for Al–LiCl–Ag and Al–Ga–Ag powders were (46.7 ± 2.1) and (31.8 ± 1.9)%. The tested Ag-modified composite powders were considered promising for hydrogen generation and had the potential for further improvement to deliver higher hydrogen yields. [ABSTRACT FROM AUTHOR]

The aim of this work is to explore a new library of coordination compounds for medicinal applications. Gallium is known for its various applications in this field. Presently, indium is not particularly important in medicine, but it shares a lot of chemical traits with its above-mentioned lighter companion, gallium, and is also used in radio imaging. These metals are combined with thiosemicarbazones, ligating compounds increasingly known for their biological and pharmaceutical applications. In particular, the few ligands chosen to interact with these hard metal ions share the ideal affinity for a high charge density. Therefore, in this work we describe the synthesis and the characterization of the resulting coordination compounds. The yields of the reactions vary from a minimum of 21% to a maximum of 82%, using a fast and easy procedure. Nuclear Magnetic Resonance (NMR) and Infra Red (IR) spectroscopy, mass spectrometry, elemental analysis, and X-ray Diffraction (XRD) confirm the formation of stable compounds in all cases and a ligand-to-metal 2:1 stoichiometry with both cations. In addition, we further investigated their chemical and biological characteristics, via UV-visible titrations, stability tests, and cytotoxicity and antibiotic assays. The results confirm a strong stability in all explored conditions, which suggests that these compounds are more suitable for radio imaging applications rather than for antitumoral or antimicrobic ones. [ABSTRACT FROM AUTHOR]

The chalcogenides of p-block elements constitute a significant category of materials with substantial potential for advancing the field of electronic and optoelectronic devices. This is attributed to their exceptional characteristics, including elevated carrier mobility and the ability to fine-tune band gaps through solid solution formation. These compounds exhibit diverse structures, encompassing both three-dimensional and two-dimensional configurations, the latter exemplified by the compound In2Se3. Sesqui-chalcogenides were synthesized through the direct reaction of highly pure elements within a quartz ampoule. Their single-phase composition was confirmed using X-ray diffraction, and the morphology and chemical composition were characterized using scanning electron microscopy. The compositions of all six materials were also confirmed using X-ray photoelectron spectroscopy and Raman spectroscopy. This investigation delves into the thermodynamic properties of indium and gallium sesqui-chalcogenides. It involves low-temperature heat capacity measurements to evaluate standard entropies and Tian–Calvet calorimetry to elucidate the temperature dependence of heat capacity beyond the reference temperature of 298.15 K, as well as the enthalpy of formation assessed from DFT calculations. [ABSTRACT FROM AUTHOR]

In this work, a highly efficient Pd catalyst containing gallium oxides supported on reduced graphene oxides has been synthesized by sodium borohydride reduction method for the electro-oxidation of formic acid. The synthesized Pd x Ga y /rGOs display outstanding electrocatalytic activity with considerably higher surface area and improved electrical conductivity during formic acid oxidation as compared to Pd/C. According to the electrochemical results the Pd 6 Ga 4 /rGO showed significantly higher electrochemical surface area (102.4 m2/g), improved catalytic activity (86 mA/cm2), smaller Tafel slope value (121 mV dec−1) and excellent durability during the electrocatalytic formic acid oxidation. Th higher turnover frequency of Pd 6 Ga 4 /rGO (4.2 × 10−1) further validates its better electrocatalytic activity. This work proves that adding gallium oxides to palladium-based electrocatalysts increases electrical conductivity and causes the uniform dispersion of palladium nanoparticles on reduced graphene oxide surface. • Gallium oxide promoted Pd electrocatalysts (Pd x Ga y /rGO) are synthesized. • Pd x Ga y /rGO electrocatalysts are investigated for formic acid oxidation reaction. • Adding gallium oxide to the Pd/rGO electrocatalyst boosts the electrochemical activity. • Pd 6 Ga 4 /rGO shows catalytic activity of 86 mA/cm2 and a Tafel slope value of 121 mV dec−1. • Pd 6 Ga 4 /rGO demonstrates high CO tolerance and great stability. [ABSTRACT FROM AUTHOR]