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Organic semiconductors with distinct molecular properties and large carrier mobilities are constantly developed in attempt to produce highly-efficient electronic materials. Recently, designer molecules with unique structural modifications have been expressly developed to suppress molecular motions in the solid state that arise from low-energy phonon modes, which uniquely limit carrier mobilities through electron-phonon coupling. However, such low-frequency vibrational dynamics often involve complex molecular dynamics, making comprehension of the underlying electronic origins of electron-phonon coupling difficult. In this work, we first generate a mode-resolved picture of electron-phonon coupling in a series of materials that were specifically designed to suppress detrimental vibrational effects. From this foundation, we develop a method based on the crystalline orbital Hamiltonian population analyses to resolve the origins -- down to the single atomic-orbital scale -- of surprisingly large electron-phonon coupling constants of particular vibrations, explicitly detailing the manner in which the intermolecular wavefunction overlap is perturbed. Overall, this approach provides a comprehensive explanation into the unexpected effects of less-commonly studied molecular vibrations, revealing new aspects of molecular design that should be considered for creating improved organic semiconducting materials.

Electronic structure calculations unveil structure-property relationships in doped polymers: dopants inserted in the alkyl chains are stronger electron acceptors than those in conjugated backbones, leading to integer charge transfer complexes.

International audience; We report on high-dimensional quantum dynamical simulations of electron−hole separation in self-assembled mesomorphic nanostructures composed of donor−acceptor conjugated co-oligomers. The latter are based on perylene diimide (PDI) acceptor units combined with fluorene-thiophene-benzothiadiazole donor units, which form highly ordered, stacked structural motifs upon self-assembly. Simulations are shown for a first-principles parametrized model lattice of 25 stacked PDI units under the effects of an applied external field and temperature. The simulations are carried out with the multilayer multiconfiguration timedependent Hartree (ML-MCTDH) method with nearly 900 vibrational degrees of freedom and 25 electronic states. Temperature effects are included using the thermofield dynamics approach. A transition between a short-time coherent dynamics and a kinetic regime is highlighted. From a flux-overpopulation analysis, electron−hole dissociation rates are obtained in the range of 5−20 ns −1 in the absence of static disorder, exhibiting a moderate field and temperature dependence. These results for electron−hole separation rates can be employed as a benchmark to calibrate the parametrization of kinetic Monte Carlo simulations applied to much larger lattice sizes.

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counterions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique based on ion exchange, we prepare highly doped films with several counterions of varying size and shape and characterize their carrier density, electrical conductivity, and paracrystalline disorder. In this uniquely large data set composed of several classes of high-mobility conjugated polymers, each doped with at least five different ions, we find electrical conductivity to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parametrized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localization theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disorder-limited nature of charge transport and suggesting new strategies to further improve conductivities.

We study defect energy levels in hexagonal boron-nitride with varying number of layers using a fragment many-body $GW$ formalism, taking as examples the paradigmatic carbon-dimer and $C_BV_N$ defects. We show that a single layer can be fragmented in polarizable finite-size areas reproducing faithfully the effect of the dielectric environment, dramatically facilitating the study at the many-body level of point defects in the dilute limit. The evolution of defect energy levels from the monolayer to a $n$-layer system due to increased screening, labeled polarization energies, follow a simple $({\Delta P}/n + P_{\infty})$ behavior. The coefficients $\Delta P$ and $P_{\infty}$ are found to be close-to-universal, with opposite signs for holes and electrons, characterizing mainly the host and the position of the defect (surface or bulk), but hardly the defect type. Our results rationalize the evolution of defect energy levels with layers number, allowing to safely extrapolate results obtained for the monolayer to few-layers, surface or bulk \textit{h}-BN. The present many-body fragment approach further opens the door to studying disordered 2D layers., Comment: Published in Phys. Rev. Materials 6, 064008 (2022)

International audience; In this work, we demonstrate several organic amorphous donor−acceptor systems that exhibit sub-bandgap features over a more than 2 eV spectral range. An in-depth study of one of these systems, NPB:HAT-CN (NPB is N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine and HAT-CN is 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile), reveals that the broad sub-bandgap features are attributed to multiple electronic charge transfer (CT) state transitions, broadened by energetic disorder sourcing from the fluctuations of intramolecular conformations and by the disordered intermolecular environment. These unique CT features originate from an unconventional donor and acceptor selection that reveals new insight about photocurrent generation and nonradiative recombination. Unlike materials employed in high performing organic solar cells, the materials studied here feature large optical energy gaps with very large frontier orbital energy level offsets, creating high bandgap devices with low open-circuit voltage. In addition to multiple electronic CT levels, we reveal that the internal quantum efficiency of these multiple CT transitions is not constant but photon energy dependent and with photoluminescence that originates primarily from the second lowest electronic CT state implying slow (relative to radiative and nonradiative rates) internal conversion within the CT manifold. Overall, this class of donor−acceptor pairs provides an opportunity to probe CT states in unique ways to potentially unravel their role in carrier generation−recombination and energy loss mechanisms. ■ INTRODUCTION With more than 15% power conversion efficiency recently achieved 1 and coupled with the ability to be grown on flexible substrates on a large scale with low-cost fabrication techniques, organic solar cells are making a strong case for energy conversion applications. Most advances in power conversion efficiency are the result of impressive material and interface engineering and innovation. However, due to the lack of a complete understanding and consensus of carrier generation and recombination processes as well as loss mechanisms at charge generating donor−acceptor (D-A) interfaces, 2 the actual limits of organic solar cell performance remain unknown. In this context, intermolecular charge transfer (CT) excitations at D−A interfaces play an important role in the photophysical processes and energy losses of organic solar cells. 3−6 In order to understand how carrier generation and recombination are affected by CT states, a better comprehension of their origin and energetic distribution is crucial. More specifically, some key issues that are currently under inquiry include whether the carrier dissociation efficiency Special Issue: Jean-Luc Bredas Festschrift

We investigated the mixed-stack charge-transfer crystal, N,N'-dimethylphenazine-TCNQ (${\mathrm{M}}_{2}\mathrm{P}$-TCNQ), which is polar at room temperature and just at the neutral-to-ionic interface (ionicity $\ensuremath{\rho}\ensuremath{\approx}0.5$). We detect the typical dielectric signature of a relaxor ferroelectric and an asymmetric positive-up-negative-down behavior. While relaxor ferroelectricity is usually ascribed to disorder in the crystal, we find no evidence for structural disorder in the investigated crystals. To elucidate the origin of ${\mathrm{M}}_{2}\mathrm{P}$-TCNQ's dielectric properties we perform parallel structural and spectroscopic measurements, associated with theoretical modeling and quantum-mechanical calculations. Our combined effort points to a highly polarizable electronic system that is strongly coupled to lattice vibrations. The found indications for polarization reversal imply flipping of the bent conformation of the ${\mathrm{M}}_{2}\mathrm{P}$ molecule with an associated energy barrier of a few tens of an eV, broadly consistent with an Arrhenius fit of the dielectric relaxation times. While the polarization is mostly of electronic origin, its possible reversal implies slow collective motions that are affected by solid-state intermolecular interactions.

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport., arXiv admin note: text overlap with arXiv:1909.05344

The presence of a hydrogen bond (H-Bond) network has been proved to impact significantly the efficiency of organic light-emitting diode (OLED) devices by promoting molecular orientation and structural anisotropy in thin films. The design of specific compounds to control H-Bond network formation in an amorphous material, and hence to improve OLED performances, is needed. A successful example is given by the bi-pyridyl-based family n-type of organic semiconductors named BPyMPM. The experimental evidences demonstrate a surprisingly higher electron mobility in thin film composed of 4,6-bis(3,5-di(pyridine-4-yl)phenyl)-2-methylpyrimidine (B4PyMPM (B4)), which is almost two order of magnitude higher than mobility measured for very similar member of the family, 4,6-bis(3,5-di(pyridine-2-yl)phenyl)-2-methylpyrimidine (B2PyMPM (B2)). Herein, a comprehensive computational study is presented, wherein classical and ab initio methods are combined, to investigate the 2D H-Bond network in B4 and B2 thin films. The results indicate that B4 forms a larger number of intermolecular C-H···N H-Bonds that promote a higher orientational and positional order in B4 films, and superior electron transport properties.

Organic solar cells usually utilise a heterojunction between electron-donating (D) and electron-accepting (A) materials to split excitons into charges. However, the use of D-A blends intrinsically limits the photovoltage and introduces morphological instability. Here, we demonstrate that polycrystalline films of chemically identical molecules offer a promising alternative and show that photoexcitation of α-sexithiophene (α-6T) films results in efficient charge generation. This leads to α-6T based homojunction organic solar cells with an external quantum efficiency reaching up to 44% and an open-circuit voltage of 1.61 V. Morphological, photoemission, and modelling studies show that boundaries between α-6T crystalline domains with different orientations generate an electrostatic landscape with an interfacial energy offset of 0.4 eV, which promotes the formation of hybridised exciton/charge-transfer states at the interface, dissociating efficiently into free charges. Our findings open new avenues for organic solar cell design where material energetics are tuned through molecular electrostatic engineering and mesoscale structural control., Though single-material organic solar cells are attractive for next-generation photovoltaic technologies, designing new materials with ideal properties remains a challenge. Here, the authors report the use of orientation-dependent molecular electrostatics to realise efficient homojunction devices.

Large amplitude motions in molecular solids are responsible for anomalous electrical characteristics in amphidynamic crystals. We study the effect of orientational dipolar disorder on charge transfer excitons (CTEs) in a donor-acceptor amphidynamic co-crystal of perylene-tetrabromophthalic anhydride (-TBPA). This co-crystal offers long range positional order of alternating donor and acceptor molecular entities arranged in stacks. Further it has a phase transition at 250 K due to progressive freezing of the dipolar orientational motion in the TBPA permanent dipole. The optical absorption band and photoluminescence at the semiconductor gap consists of at least three energetically separated CTE resonances that cover a spectral range of more than 400 meV. As the temperature is lowered below the phase transition the CTE band remains broad, but shows a shift of ∼150 meV to higher energy. On the basis of optical reflectivity, photoluminescence, and model calculations we interpret the room temperature CTE band as a collection of resonances in which at least one the nearest neighbour dipoles to the CTE is flipped from their lowest energy configuration. This first comprehensive optical investigation on an amphidynamic co-crystal demonstrates the importance of understanding the role of permanent dipoles in the CTE photophysics of organic semiconductors. This journal is

By employing the Bethe-Salpeter formalism coupled with a nonequilibrium embedding scheme, we demonstrate that the paradigmatic case of S

International audience; By employing the Bethe-Salpeter formalism coupled with a non-equilibrium embedding scheme, we demonstrate that the paradigmatic case of S1 band separation between cis and trans in azobenzene derivatives can be computed with excellent accuracy compared to experimental optical spectra. Besides embedding, we show that the choice of the Kohn-Sham exchange correlation functional for DFT is critical, despite the iterative convergence of GW quasiparticle energies. We address this by adopting an orbital-tuning approach via the global hybrid functional, PBEh, yielding an environment-consistent ionization potential. The vertical excitation energy of 20 azo molecules are predicted with a mean absolute error as low as 0.06 eV, up to three times smaller compared to standard functionals such as M06-2X and PBE0, and five times smaller compared to recent TDDFT results.

Halogenation of conjugated molecules represents a powerful approach to tune the electronic structure of molecular thin films through inductive effects and long-range intermolecular electrostatic interactions. The mixing of halogenated molecules with their pristine counterparts has recently proven successful in altering the blend’s energy levels to adjust the open-circuit voltage of organic solar cells by the mixing ratio. Here, we show that the prevailing rationale for this effect is not equally valid for different molecular orientations. We provide a comprehensive experimental and theoretical analysis of the prototypical blend formed by pentacene and perfluoropentacene to relate structure with electronic properties. We find a mixed-stack structural motif in standing and lying orientations depending on the substrate nature. In the standing orientation, the ionization potential lies in between the values of the pure components, in line with the established picture of averaged molecular quadrupole moments. For the lying orientation, however, we experimentally observe an ionization potential lower than both pristine values, which seems at odds with this simple rationale. Electrostatic simulations based on the knowledge of the atomistic structure of the films capture the complex experimental scenario for both orientations. In particular, the ultralow ionization potential of films formed by lying molecules is identified as a signature of the monolayer structure, where quadrupolar interactions are responsible for a difference of ca. 0.4 eV in the highest occupied molecular orbital energy as compared to thicker films with the same molecular orientation.

International audience; In an effort to gain a comprehensive picture of the interfacial states in bulk heterojunction solar cells, we provide a combined experimental−theoretical analysis of the energetics and dynamics of low-lying electronic charge-transfer (CT) states in donor:acceptor blends with a large frontier orbital energy offset. By varying the blend composition and temperature, we unravel the static and dynamic contributions to the disordered density of states (DOS) of the CT-state manifold and assess their recombination to the ground state. Namely, we find that static disorder (conformational and electrostatic) shapes the CT DOS and that fast nonradiative recombination crops the low-energy tail of the distribution probed by external quantum efficiency (EQE) measurements (thereby largely contributing to voltage losses). Our results then question the standard practice of extracting microscopic parameters such as exciton energy and energetic disorder from EQE.

International audience; Organic molecular beam deposition has been used to surpass the chemical approach commonly adopted for coating SiO x surfaces, obtaining a smooth and uniform monomolecular layer of sexithiophene that fully covers the SiO x surface on the centimetre length scale. This result has been achieved by submitting sexithiophene sub-monolayer films grown at different substrate temperatures to a post-deposition annealing process. Through Scanning Probe Microscopy techniques, morphological, tribological and mechanical measurements have highlighted the existence of face-on molecular aggregates on the SiO x surface and their reorganization by means of a post-annealing process. Atomistic molecular dynamics simulations complement experimental observations, shedding light on the microscopic aspects of molecular diffusion and aggregates reorganization. Exploiting the molecular reorganization upon post-annealing, almost perfect 6 T monolayers were grown through a sequence of deposition and annealing steps. This preparation technique represents a new route for changing surface properties by using high controlled monomolecular layers.

By employing the Bethe-Salpeter formalism with a non-equilibrium embedding scheme, we demonstrate that the paradigmatic case of S1 band separation between cis and trans in azobenzene derivatives can be computed with excellent accuracy compared to experimental optical spectra. Besides embedding, we show that the choice of the Kohn-Sham exchange correlation functional for DFT is critical, despite the iterative convergence of GW quasiparticle energies. We address this by using a global hybrid functional, PBEh, with the amount of exact exchange fulfilling the Koopman’s theorem for DFT hence yielding an environment-consistent ionization potential.This method yields the first vertical excitation energy of 20 azo molecules with a mean absolute error as low as 0.06 eV, up to three times smaller compared to standard functionals such as M06-2X and PBE0, and five times smaller compared to recent TDDFT results.

We compare two small π-conjugated donor-bridge-acceptor organic molecules differing mainly in the number of thiophene rings in their bridging motifs (1 ring in 1; 2 rings in 2) with the aim of rationalizing the origin of the enhancement in the singlet exciton diffusion coefficient and length of 1 with respect to 2. By combining force field molecular dynamics and micro electrostatic schemes with time-dependent density functional theory and kinetic Monte Carlo simulations, we dissect the nature of the lowest electronic excitations in amorphous thin films of these molecules and model the transport of singlet excitons across their broadly disordered energy landscapes. In addition to a longer excited-state lifetime associated with a more pronounced intramolecular charge-transfer character, our calculations reveal that singlet excitons in 1 are capable of funneling through long-distance hopping percolation pathways, presumably as a result of the less anisotropic shape of the molecule, which favours long-range 3D transport.

Singlet exciton fission is a spin-allowed process in organic semiconductors by which one absorbed photon generates two triplet excitons. Theory predicts that singlet fission is mediated by intermolecular charge-transfer states in solid-state materials with appropriate singlet-triplet energy spacing, but direct evidence for the involvement of such states in the process has not been provided yet. Here, we report on the observation of subpicosecond singlet fission in mixed films of pentacene and perfluoropentacene. By combining transient spectroscopy measurements to nonadiabatic quantum-dynamics simulations, we show that direct excitation in the charge-transfer absorption band of the mixed films leads to the formation of triplet excitons, unambiguously proving that they act as intermediate states in the fission process.

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as organic light-emitting diodes or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10%, a phenomenon that has been put in relation with the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale model for the dielectric properties of doped organic semiconductor is set up by combining first principles and microelectrostatic calculations. The results predict a large nonlinear enhancement of the dielectric constant (tenfold at 8% load) as the system approaches a dielectric instability (catastrophe) upon increasing doping. This can be attributed to the presence of highly polarizable host-dopant complexes, plus a nontrivial leading contribution from dipolar interactions in the disordered and heterogeneous system. The enhanced screening in the material drastically reduces the (free) energy barriers for electron-hole separation, rationalizing the possibility for thermal charge release. The proposed mechanism is consistent with conductivity data and sets the basis for achieving higher conductivities at lower doping loads.

Molecular doping—the use of redox‐active small molecules as dopants for organic semiconductors—has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox‐active character of these materials. A recent breakthrough was a doping technique based on ion‐exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno(3,2‐b)thiophene) (PBTTT) doped with FeCl3 and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm−1 and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl3, are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.

Motivated by the potential for application of organic semiconductors in exible electronics, we present a theoretical study aiming at elucidating the interplay between mechanical strain and electronic, vibrational and charge transport properties of the prototypical high-mobility molecular semiconductor rubrene. Our study considers several factors that can play a role in the electro-mechanical response of a soft, van-der-Waals bonded, molecular crystal, such as intermolecular charge transfer integrals, lattice dynamics and electron phonon coupling. We find that compressive strain leads to an increase in magnitude of charge transfer integrals but also of the energetic disorder hampering the mobility. Charge transport simulations, based on the transient localization framework and fed with first-principles inputs, reveal a remarkably different response to strain applied along different crystal axes, in line with most recent experiments. The critical interplay between energetic disorder of intrinsic and extrinsic nature on the mobility-strain relationship is also discussed. The theoretical approach proposed in this work paves the way for the systematic study of the electro-mechanical response of different classes of high-mobility molecular semiconductors.

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron – phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, we have combined state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way we have been able to identify the long-axis sliding motion as a ‘killer’ phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, we propose a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors., Royal Society German Research Foundation European Research Council Engineering and Physical Sciences Research Council ARCHER UK National Supercomputing Service Belgian National Fund for Scientific Research Leverhulme Trust Wiener-Anspach Foundation Belgian Walloon Region GENCI-CINES/IDRIS

International audience; Charge carriers energetics is key in electron transfer processes such as those that enable the electrical doping of organic semiconductors. In this study, we take advantage of the quantitative accuracy of embedded GW calculations to perform a series of virtual experiments that allow measuring the electron affinity of p-type dopants in different host solids. Our calculations show that the energy levels of a molecular impurity strongly depend on the host environment as a result of electrostatic intermolecular interactions. In particular, the electron affinity of a dopant impurity in a given semiconductor is found to be up to 1 eV lower than that of the pure dopant crystal. This result questions the pertinence of the electron affinity measured for pure dopants in order to predict doping efficiency in a specific host. The role of the Coulomb electron-hole interaction for the dopant-to-semiconductor charge transfer and for the release of doping-induced charges is discussed.

Understanding and controlling the growth of organic crystals deposited from the vapor phase is important for fundamental materials science and necessary for applications in pharmaceutical and organic electronics industries. Here, this process is studied for the paradigmatic case of pentacene on silica by means of a specifically tailored computational approach inspired by the experimental vapor deposition process. This scheme is able to reproduce the early stages of the thin-film formation, characterized by a quasi layer-by-layer growth, thus showcasing its potential as a tool complementary to experimental techniques for investigating organic crystals. Crystalline islands of standing molecules are formed at a critical coverage, as a result of a collective reorientation of disordered aggregates of flat-lying molecules. The growth then proceeds by sequential attachment of molecules at the cluster and then terrace edges. Free-energy calculations allowed us to characterize the step-edge barrier for descending the terraces, a fundamental parameter for growth models for which only indirect experimental measurements are available. The barrier is found to be layer-dependent (approximately 1 kcal/mol for the first monolayer on silica, 2 kcal/mol for the second monolayer) and to extend over a distance comparable with the molecular length.

Thermally activated delayed fluorescence (TADF) offers promise for all-organic light-emitting diodes with quantum efficiencies competing with those of transition-metal-based phosphorescent devices. While computational efforts have so far largely focused on gas-phase calculations of singlet and triplet excitation energies, the design of TADF materials requires multiple methodological developments targeting among others a quantitative description of electronic excitation energetics, fully accounting for environmental electrostatics and molecular conformational effects, the accurate assessment of the quantum mechanical interactions that trigger the elementary electronic processes involved in TADF, and a robust picture for the dynamics of these fundamental processes. In this Perspective, we describe some recent progress along those lines and highlight the main challenges ahead for modeling, which we hope will be useful to the whole TADF community. The work in Mons was supported by the Belgian National Science Foundation, F.R.S.-FNRS. Computational resources have been provided by the Consortium des Équipements de Calcul Intensif (CÉCI), funded by F.R.S.-FNRS under Grant No. 2.5020.11 as well as the Tier-1 supercomputer of the Fédération Wallonie-Bruxelles, infrastructure funded by the Walloon Region under Grant Agreement n1117545. The research in Bologna, Grenoble, and Mons is also through the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. 646176 (EXTMOS project).

Thermally Activated Delayed Fluorescence (TADF) process is the new paradigm for Organic Light-Emitting Diodes (OLEDs). Despite all the efforts, a complete mechanistic understanding of TADF materials has not been fully uncovered yet. Part of the complexity arises from the apparent dichotomy between the need for small energy difference between the lowest singlet and triplet excited states (EST) which has to carry a significant charge transfer (CT) character; and for a significant spin-orbit coupling which according to El-Sayed rules requires the involved singlet and triplet excited states to have very different natures. In this contribution, we will show: (i) How the nature of these excited can be characterized and how this nature can be tuned by varying the nature of the electron donating (D) or accepting (A) units in D-A(-D) compounds. (ii) How this dichotomy can be resolved once accounting in a fully atomistic model of reference carbazole derivatives for thermal fluctuations of the molecular conformations and discrete electronic polarization effects in amorphous films. For both topics, we will demonstrate that, electronic excitations involved in the TADF process have a mixed CT-locally excited character being dynamically tuned by torsional vibrational modes and that overall, the conversion of triplet-to-singlet is a dynamic process gated by conformational fluctuations.

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure–charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure–property relationships in organic semiconductors., The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step density.

Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials., Martensitic transition is commonly seen in steel and shape memory alloys but rarely in organic materials. Chung et al. discover martensitic transitions in organic electronics and utilize it in designing field-effect transistors, leading to shape memory effect that in return modifies charge transport properties.

International audience; We present a novel hybrid quantum/classical approach to the calculation of charged excitations in molecular solids based on the many-body Green's function GW formalism. Molecules described at the GW level are embedded into the crystalline environment modeled with an accurate classical polarizable scheme. This allows the calculation of electron addition and removal energies in the bulk and at crystal surfaces where charged excitations are probed in photoelectron experiments. By considering the paradigmatic case of pentacene and perfluoropentacene crystals, we discuss the different contributions from intermolecular interactions to electronic energy levels, distinguishing between polarization, which is accounted for combining quantum and classical polarizabilities, and crystal field effects, that can impact energy levels by up to ±0.6 eV. After introducing band dispersion, we achieve quantitative agreement (within 0.2 eV) on the ionization potential and electron affinity measured at pentacene and perfluoropentacene crystal surfaces characterized by standing molecules.

Despite significant efforts, a complete mechanistic understanding of thermally activated delayed fluorescence (TADF) materials has not yet been fully uncovered. Part of the complexity arises from the apparent dichotomy between the need for close energy resonance and for a significant spin-orbit coupling between alike charge-transfer singlet and triplet excitations. Here we show, in the case of reference carbazole derivatives, that this dichotomy can be resolved in a fully atomistic model accounting for thermal fluctuations of the molecular conformations and microscopic electronic polarization effects in amorphous films. These effects yield electronic excitations with a dynamically mixed charge-transfer and localized character, resulting in thermally averaged singlet-triplet energy differences and interconversion rates in excellent agreement with careful spectroscopic studies. The work in Mons was supported by the Programme d’Excellence de la Région Wallonne (OPTI2MAT project), the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. 646176 (EXTMOS project), and FNRS-FRFC. Computational resources were provided by the Consortium des Équipements de Calcul Intensif (CÉCI), funded by the Fonds de la Recherche Scientifiques de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11, as well as the Tier-1 supercomputer of the Fédération Wallonie-Bruxelles, infrastructure funded by theWalloon Region under Grant Agreement No. 1117545. B.Y. and T.Q.N. thank the Department of the Navy, Office of Naval Research (Award No. N00014-14-1-0580) for support. L.M. acknowledges funding by the French national grant ANR-10-LABX-0042-AMADEus managed by the National Research Agency under the initiative of excellence IdEx Bordeaux program (reference ANR-10-IDEX-0003-02). G.D. acknowledges support from EU through the FP7-PEOPLE-2013-IEF program (Project No. 625198).

Organic pi-conjugated polymers are deemed to be soft materials with strong electron-phonon coupling, which results in the formation of polarons, i.e., charge carriers dressed by self-localized distortion of the nuclei. Universal signatures for polarons are optical resonances below the band gap and intense vibrational modes (IVMs), both found in the infrared (IR) spectral region. Here, we study p-doped conjugated homo- and copolymers by combining first-principles modelling and optical spectroscopy from the far-IR to the visible. Polaronic IVMs are found to feature absorption intensities comparable to purely electronic transitions and, most remarkably, show only loose resemblance to the Raman or IR-active modes of the neutral polymer. The IVM frequency is dramatically scaled down (up to 50%) compared to the backbone carbon-stretching modes in the pristine polymers. The very large intensity of IVMs is associated with displacement of the excess positive charge along the backbone driven by specific vibrational modes. We propose a quantitative picture for the identification of these polaron shifting modes that solely based on structural information, directly correlates with their IR intensity. This finding finally discloses the elusive microscopic mechanism behind the huge IR intensity of IVMs in doped polymeric semiconductors.

A theoretical investigation of the molecular organization at a sexithiophene (T6)-C-60 fullerene planar heterojunction, based on atomistic molecular dynamics, is presented, in which the effect of two different sample preparation processes on the resulting interface morphology is explored. First, the landing of T6 on C-60(001) substrate is considered, which leads to crystalline layers of standing and tilted molecules, in accordance with experiments. The observation and the quantitative characterization of the nucleation and growth provide detailed insights on this out-of-equilibrium process, including the establishment of an epitaxial relationship between the substrate and the interfacial T6 layer, and the spontaneous formation of defective islands, characterized by chiral edges, during the growth of the second and third layers. It is then shown that molecular orientations can be radically changed upon annealing at 600 K, at which T6 forms a smectic phase with planar alignment, whose layers are perpendicular to the interface. The interfacial T6 morphologies are then analyzed in detail at room temperature and compared to the known bulk polymorphs.

Static dielectric tensors and charge carrier polarization energies of a wide set of organic molecules of interest for organic electronics application are calculated with two different approaches: intramolecular charge redistribution and induced dipoles (microlectrostatics). Our results show that, while charge redistribution is better suited for calculating the collective response to an external field, both methods reliably describe the effect of a localized charge carrier in the crystal. Advantages and limitations inherent to the different methods are discussed, also in relation to previous theoretical studies. The agreement with available experimental data confers to our results a predictive character where measurements are missing.

D’Avino, Gabriele et al.

The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors., Keywords: Organic semiconductors, Molecular doping, Approximation methods for many-body systems, GW formalism, Bethe-Salpeter equation

Neutral-ionic transitions (NITs) occur in organic charge-transfer (CT) crystals of planar π -electron donors (D) and acceptors (A) that form mixed stacks ... D+ρA−ρD+ρA−ρD+ρA−ρ ... with variable ionicity 0 < ρ < 1 and electron transfer t along the stack. The microscopic NIT model presented here combines a modified Hubbard model for strongly correlated electrons delocalized along the stack with Coulomb intermolecular interactions treated in mean field. It also accounts for linear coupling of electrons to a harmonic molecular vibration and to the Peierls phonon. This simple framework captures the observed complexity of NITs with continuous and discontinuous ρ on cooling or under pressure, together with the stack’s instability to dimerization. The interplay of charge, molecular and lattice degrees of freedom at NIT amplifies the nonlinearity of responses, accounts for the dielectric anomaly, and generates strongly anharmonic potential energy surfaces (PES). Dynamics on the ground state PES address vibrational spectra using time correlation functions. When extended to the excited state PES, the NIT model describes the early (

10 pages; International audience; The semiconducting and self-assembling properties of columnar discotic liquid crystals have stimulated intense research toward their application in organic solar cells, although with a rather disappointing outcome to date in terms of efficiencies. These failures call for a rational strategy to choose those molecular design features (e.g., lattice parameter, length and nature of peripheral chains) that could optimize solar cell performance. With this purpose, in this work we address for the first time the construction of a realistic planar heterojunction between a columnar donor and acceptor as well as a quantitative measurement of charge separation and recombination rates using state of the art computational techniques. In particular, choosing as a case study the interface between a perylene donor and a benzoperylene diimide acceptor, we attempt to answer the largely overlooked question of whether having well-matching donor and acceptor columns at the interface is really beneficial for optimal charge separation. Surprisingly, it turns out that achieving a system with contiguous columns is detrimental to the solar cell efficiency and that engineering the mismatch is the key to optimal performance.

We present an original hybrid QM/MM scheme merging the many-body Green’s functionGWformalism with classical discrete polarizable models and its application to the paradigmatic case of a pentacene crystal. Our calculated transport gap is found to be in excellent agreement with reference periodic bulkGWcalculations, together with properly parametrized classical microelectrostatic calculations, and with photoionization measurements at crystal surfaces. More importantly, we prove that the gap is insensitive to the partitioning of pentacene molecules in QM and MM subsystems, as a result of the mutual compensation of quantum and classical polarizabilities, clarifying the relation between polarization energy and delocalization. The proposed hybrid method offers a computationally attractive strategy to compute the full spectrum of charged excitations in complex molecular environments, accounting for both QM and MM contributions to the polarization energy, a crucial requirement in the limit of large QM subsystems.