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Herpes zoster (HZ), also known as shingles, remains a significant global health issue and most commonly seen in elderly individuals with an early exposure history to varicella-zoster virus (VZV). Currently, the licensed vaccine Shingrix, which comprises a recombinant VZV glycoprotein E (gE) formulated with a potent adjuvant AS01B, is the most effective shingles vaccine on the market. However, undesired reactogenicity and increasing global demand causing vaccine shortage, prompting the development of novel shingles vaccines. Here, we developed novel vaccine candidates utilising multiple nanoparticle (NP) platforms to display the recombinant gE antigen, formulated in an MF59-biosimilar adjuvant. In naïve mice, all tested NP vaccines induced higher humoral and cellular immune responses than Shingrix, among which, the gEM candidate induced the highest cellular response. In live attenuated VZV (VZV LAV)-primed mouse and rhesus macaque models, the gEM candidate elicited superior cellmediated immunity (CMI) over Shingrix. Collectively, we demonstrated that NP technology remains a suitable tool for developing shingles vaccine, and the reported gEM construct is a highly promising candidate in the next-generation shingles vaccine development. [ABSTRACT FROM AUTHOR]

Matching of various chalcogenide films shows the advantage of delivering multilayer heterostructures whose physical properties can be tuned with respect to the ones of the constituent single films. In this work, (Ge–Sb–Te)-based heterostructures were deposited by radio frequency sputtering on Si(100) substrates and annealed up to 400 °C. The as-deposited and annealed samples were studied by means of X-ray fluorescence, X-ray diffraction, scanning transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The heterostructures, combining thermally stable thin layers (i. e. Ge-rich Ge5.5Sb2Te5, Ge) and films exhibiting fast switching dynamics (i. e. Sb2Te3), show, on the one side, higher crystallization-onset temperatures than the standard Ge2Sb2Te5 alloy and, on the other side, none to minimal Ge-segregation. [ABSTRACT FROM AUTHOR]

Abstract Matching of various chalcogenide films shows the advantage of delivering multilayer heterostructures whose physical properties can be tuned with respect to the ones of the constituent single films. In this work, (Ge–Sb–Te)-based heterostructures were deposited by radio frequency sputtering on Si(100) substrates and annealed up to 400 °C. The as-deposited and annealed samples were studied by means of X-ray fluorescence, X-ray diffraction, scanning transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The heterostructures, combining thermally stable thin layers (i. e. Ge-rich Ge5.5Sb2Te5, Ge) and films exhibiting fast switching dynamics (i. e. Sb2Te3), show, on the one side, higher crystallization-onset temperatures than the standard Ge2Sb2Te5 alloy and, on the other side, none to minimal Ge-segregation.

Crude palm oil (CPO) purification aims to remove or degrade unwanted components such as free fatty acids (FFA), phospholipids, impurities, color pigments, metals, and odors. The CPO purification generally consists of degumming, bleaching, and deodorization process. During the stages, some undesirable compounds are formed, including 3-monochloropropane-1,2-diol ester (3-MCPDE) and glycidyl ester (GE). The main precursors responsible for formation of the two compounds are chlorides and acyl glycerol fractions, especially diacylglycerol (DAG) and this occurs high temperatures in the deodorization process. Therefore, it is necessary to reduce their precursors in order to supress the contaminants. To cope with the problem, a washing process of CPO was proposed as an extra process before a purification stage. The washing process was carried out in two ways, namely wet washing by using water, and dry washing by using bleaching earth (BE) by 2 types of commercial BE (natural and acid activated). Washing processes using wet and dry washing (natural and activated BE) showed comparable effectiveness in reducing 3-MCPDE and GE levels in refined palm oil. As a result, the process successfully reduced 3-MCPDE content to comply with a standard Commission Regulation (EU) 2020/1332, but GE content did not conform to standard.

Abstract Pseudorabies virus (PRV) is recognized as the aetiological agent responsible for Aujeszky’s disease, or pseudorabies, in swine populations. Rab6, a member of the small GTPase family, is implicated in various membrane trafficking processes, particularly exocytosis regulation. Its involvement in PRV infection, however, has not been documented previously. In our study, we observed a significant increase in the Rab6 mRNA and protein levels in both PK-15 porcine kidney epithelial cells and porcine alveolar macrophages, as well as in the lungs and spleens of mice infected with PRV. The overexpression of wild-type Rab6 and its GTP-bound mutant facilitated PRV proliferation, whereas the GDP-bound mutant form of Rab6 had no effect on viral propagation. These findings indicated that the GTPase activity of Rab6 was crucial for the successful spread of PRV. Further investigations revealed that the reduction in Rab6 levels through knockdown significantly hampered PRV proliferation and disrupted virus assembly and egress. At the molecular level, Rab6 was found to interact with the PRV glycoproteins gB and gE, both of which are essential for viral assembly and egress. Our results collectively suggest that PRV exploits Rab6 to expedite its assembly and egress and identify Rab6 as a promising novel target for therapeutic treatment for PRV infection.

Background: Portal hypertension commonly occurs due to liver cirrhosis, and esophageal varices (EV) is one of the major complications associated with it. The most common cause of death in liver cirrhosis is EV bleeding. Hence, GE screening for EV is required, which is an invasive procedure. Regular use of endoscopy results in low compliance due to cost and discomfort for patients. Hence, identifying non-invasive markers that could grade EV provides a useful screening tool for family physicians and primary health centers (PHCs) by referring the patient to higher centers for definitive treatment, which could reduce mortality due to variceal bleeding in cirrhotic patients. Aims: To assess non-invasive predictors of grade EV in patients diagnosed with liver cirrhosis. Settings and Design: Cross-sectional study. Methods and Material: A total of 109 patients with liver cirrhosis underwent clinical and biochemical evaluation, USG abdomen with spleen bipolar diameter, ascitic fluid analysis, and upper GE with a grade of EV are recorded. Statistical Analysis Used: SPSS software with Student t-test, Chi-square t-test, analysis of variance, receiver operator characteristic (ROC) curves, and Spearman correlation with 95% CI is used. P 1.815, PC/SD ≤909, and SAAG >1.1g/dl showed EV in liver cirrhosis (P < 0.05). The order of prediction with ROC curves shows APRI score > PC/SD > SAAG. In grading EV, APRI scores of 1.9–2.5 and >2.5 showed small and large EV, respectively (P < 0.05). Conclusions: APRI score may be used in PHC as an early intervention to grade EV and refer the patient to higher centers for definitive treatment. This would prevent the progression of varices to rupture and reduce mortality due to variceal bleeds in liver cirrhosis patients.

Pemurnian crude palm oil (CPO) bertujuan untuk menghilangkan atau menurunkan komponenkomponen yang tidak diinginkan seperti kadar asam lemak bebas (ALB), fosfolipida, kotoran, pigmen warna, logam, dan bau. Tahap pemurnian CPO secara umum terdiri atas proses degumming, bleaching, dan deodorization. Tahapan pemurnian tersebut dapat membentuk senyawa yang tidak diinginkan yaitu 3-monochloropropane-1,2-diol ester (3-MCPDE) dan glycidyl ester (GE). Prekursor utama terbentuknya kedua senyawa tersebut adalah klorida dan fraksi asil gliserol terutama diasilgliserol (DAG) yang melibatkan suhu tinggi pada proses deodorisasi. Oleh karena itu, perlu dilakukan mitigasi pengurangan prekursor pembentuk kedua kontaminan tersebut. Adapun alternatif yang digunakan pada penelitian ini adalah dengan menambahkan satu tahap proses yaitu pencucian yang dilakukan sebelum memasuki proses pemurnian. Proses pencucian dilakukan dengan dua cara yaitu pencucian basah menggunakan air dan pencucian kering menggunakan bleaching earth (BE) dari 2 jenis BE komersial (BE natural dan BE aktivasi asam). Proses pencucian dengan metode pencucian basah dan kering (BE natural dan aktivasi asam) memiliki efektivitas yang sama dalam menurunkan kadar 3-MCPDE dan GE pada pemurnian minyak sawit. Kadar 3-MCPDE telah memenuhi Commission Regulation (EU) 2020/1332, namun kadar GE belum memenuhi standar. Crude palm oil (CPO) purification aims to remove or degrade unwanted components such as free fatty acids (FFA), phospholipids, impurities, color pigments, metals, and odors. The CPO purification generally consists of degumming, bleaching, and deodorization process. During the stages, some undesirable compounds are formed, including 3-monochloropropane-1,2-diol ester (3-MCPDE) and glycidyl ester (GE). The main precursors responsible for formation of the two compounds are chlorides and acyl glycerol fractions, especially diacylglycerol (DAG) and this occurs high temperatures in the deodorization process. Therefore, it is necessary to reduce their precursors in order to supress the contaminants. To cope with the problem, a washing process of CPO was proposed as an extra process before a purification stage. The washing process was carried out in two ways, namely wet washing by using water, and dry washing by using bleaching earth (BE) by 2 types of commercial BE (natural and acid activated). Washing processes using wet and dry washing (natural and activated BE) showed comparable effectiveness in reducing 3-MCPDE and GE levels in refined palm oil. As a result, the process successfully reduced 3-MCPDE content to comply with a standard Commission Regulation (EU) 2020/1332, but GE content did not conform to standard. [ABSTRACT FROM AUTHOR]

Pseudorabies virus (PRV) is recognized as the aetiological agent responsible for Aujeszky's disease, or pseudorabies, in swine populations. Rab6, a member of the small GTPase family, is implicated in various membrane trafficking processes, particularly exocytosis regulation. Its involvement in PRV infection, however, has not been documented previously. In our study, we observed a significant increase in the Rab6 mRNA and protein levels in both PK-15 porcine kidney epithelial cells and porcine alveolar macrophages, as well as in the lungs and spleens of mice infected with PRV. The overexpression of wild-type Rab6 and its GTP-bound mutant facilitated PRV proliferation, whereas the GDP-bound mutant form of Rab6 had no effect on viral propagation. These findings indicated that the GTPase activity of Rab6 was crucial for the successful spread of PRV. Further investigations revealed that the reduction in Rab6 levels through knockdown significantly hampered PRV proliferation and disrupted virus assembly and egress. At the molecular level, Rab6 was found to interact with the PRV glycoproteins gB and gE, both of which are essential for viral assembly and egress. Our results collectively suggest that PRV exploits Rab6 to expedite its assembly and egress and identify Rab6 as a promising novel target for therapeutic treatment for PRV infection. [ABSTRACT FROM AUTHOR]

Background: Portal hypertension commonly occurs due to liver cirrhosis, and esophageal varices (EV) is one of the major complications associated with it. The most common cause of death in liver cirrhosis is EV bleeding. Hence, GE screening for EV is required, which is an invasive procedure. Regular use of endoscopy results in low compliance due to cost and discomfort for patients. Hence, identifying non-invasive markers that could grade EV provides a useful screening tool for family physicians and primary health centers (PHCs) by referring the patient to higher centers for definitive treatment, which could reduce mortality due to variceal bleeding in cirrhotic patients. Aims: To assess non-invasive predictors of grade EV in patients diagnosed with liver cirrhosis. Settings and Design: Cross-sectional study. Methods and Material: A total of 109 patients with liver cirrhosis underwent clinical and biochemical evaluation, USG abdomen with spleen bipolar diameter, ascitic fluid analysis, and upper GE with a grade of EV are recorded. Statistical Analysis Used: SPSS software with Student t-test, Chi-square t-test, analysis of variance, receiver operator characteristic (ROC) curves, and Spearman correlation with 95% CI is used. P <0.05 is considered significant. Results: Aminotransferase to Platelet count Ratio Index (APRI) score >1.815, PC/SD ≤909, and SAAG >1.1g/dl showed EV in liver cirrhosis (P < 0.05). The order of prediction with ROC curves shows APRI score > PC/SD > SAAG. In grading EV, APRI scores of 1.9-2.5 and >2.5 showed small and large EV, respectively (P < 0.05). Conclusions: APRI score may be used in PHC as an early intervention to grade EV and refer the patient to higher centers for definitive treatment. This would prevent the progression of varices to rupture and reduce mortality due to variceal bleeds in liver cirrhosis patients. [ABSTRACT FROM AUTHOR]

In this paper, we focus on the single crystal material germanium (Ge), which is fabricated into saturable absorbers (SAs) employing liquid phase exfoliation, and validate it with an erbium-doped fiber laser (EDFL). The Ge SA was obtained with a modulation depth of 9.8% and a saturation intensity of 11.02 MW cm−2. The single-wavelength mode-locked pulse with a minimum pulse width of 847 fs was obtained at a cavity length of 10.5 m. In addition, at a cavity length of 106 m, a dual-wavelength mode-locked phenomenon was obtained in which the central wavelengths were located at 1559.20 nm and 1561.31 nm. The experimental results show that Ge nanosheets in an EDFL provide a strong basis for the development of nonlinear optics and have a wide range of applications in the field of pulsed fiber lasers. [ABSTRACT FROM AUTHOR]

Wearable technologies encompass a diverse range of devices integral to our daily routines. Thermoelectric materials, known for their ability to convert heat differentials into electrical energy, are driving advancements in the automotive, aerospace, consumer electronics, and healthcare sectors. In automotive and aerospace, thermoelectric generators (TEGs) are utilized to enhance fuel efficiency and power onboard systems. In consumer electronics, thermoelectric coolers regulate temperature in devices like laptops and smartphones while also powering wearable technologies and sensors. Healthcare applications include wearable health monitors and drug delivery systems, utilizing thermoelectric devices for thermal management and diagnostics. Smartwatches, intelligent bracelets, sunglasses, and blood pressure sensors exemplify this trend, harnessing the potential of thermoelectric materials to generate power from temperature differentials. Ag2S is a ductile thermoelectric material with a potential use in thermoelectric devices. The aim of the article was to characterize the thermoelectric Ag2S -based material and describe the impact of chosen dopants on material properties. The Seebeck coefficient of pure Ag2S is -1051 μV.K−1, the Seebeck coefficient of Sb-doped material is −2.54 μV.K−1, and that of Ge-doped material is more positive at −87 μV.K−1. Material doped with Ge shows better thermoelectric properties.

The analysis of the prospects for the creation of ultrathin, lightweight and highly efficient solar cells based on AIIIBV/Ge heterostructures. Technological problems and prospects of various options are discussed. As the most promising method, it is proposed to use chemical thinning of AIIIBV/Ge heterostructures using a temporary technological carrier. A solar cell grown on a germanium substrate with a contact grid, an antireflection coating and radiation-proof glass, but without a back metal contact, is glued face-on to a technological carrier. Next, the Ge substrate is etched to the desired thickness and a back contact is created, and the carrier is removed by heating. This technique makes it possible to thin the Ge substrate to several tens of microns and significantly increase the percentage of yield of suitable devices almost without the risk of destroying the heterostructure. Measurement of the current-voltage characteristics of a thinned solar cell showed that for the terrestrial spectrum, the values of the parameters of the thinned sample coincide with the initial values. The idling voltage is 2.67 V, the current density is 14 mA/cm2.This opens up the possibility of creating highly efficient thin and light solar cells for space batteries based on currently mass-produced heterostructures - AIIIBV/Ge.

This study investigated the effects of Ag and Ge on the precipitation behavior and resultant properties of AA6061 alloys using hardness measurements, electrical conductivity tests, transmission electron microscopy (TEM), and atom probe tomography (APT). Trace addition of Ge can increase the electrical conductivity and thermal stability, but slightly deteriorates the hardness during the early- and peak-aging stages. Trace addition of Ag can enhance the hardness during aging, especially in the over-aging stage, but it deteriorates the electrical conductivity. For the Ag-added alloys, the Ag atoms provide more nucleation sites and are substantially incorporated into the clusters, suggesting the formation of various types of precipitates with increasing aging time. During the peak- and over-aging stages, the Ag atoms not only segregate but also incorporate into the precipitates, resulting in the disordering of the precipitates and suppression of the coarsening of the precipitates. For the Ge-added alloys, the formation and evolution of the clusters are suppressed by Ge addition, owing to the high binding energy between the Ge and Mg atoms. With the aging time increasing, the Ge atoms are incorporated into the precipitates and suppress the ordering process of the precipitates, resulting in better thermal stability of the Ge-added alloys in the over-aging stage. The addition of both Ag and Ge shows potential for elevated temperature component applications.

Learning and teaching a language for specific purposes, in our case English language, is quite a new approach at the Public University of Prishtina, which was established only in 1970. Considering this fact, English language teaching in Kosovo has been around ever since. It was initially taught as General English (GE) in the schools of the capital city and later, namely from the 1980s to date throughout the country. Nevertheless, English for Specific Purposes (ESP) is one of the most recent courses that have started to attract the attention of the domestic teaching authorities, mainly at the university level, while it continues to be absent in secondary schools. Despite this, the reason for the absence of ESP in secondary education relates to the lack of planning, extracurricular teaching materials or specific textbooks. In this paper, we will review the current state of GE at the University of Prishtina by assessing the English language first-term exam results for two groups of students in the first year in the Departments of History and Political Sciences, with the aim of finding out whether they are ready to attend ESP courses in the second semester. Research has taken place amongst male and female students, aged 18-19, who attended the A1 and B2+GE level as per the CEFR requirements. The students who pass the exam may be qualified to attend the ESP classes in the second semester, whereas students who did not should continue with GE classes. [ABSTRACT FROM AUTHOR]

Wearable technologies encompass a diverse range of devices integral to our daily routines. Thermoelectric materials, known for their ability to convert heat differentials into electrical energy, are driving advancements in the automotive, aerospace, consumer electronics, and healthcare sectors. In automotive and aerospace, thermoelectric generators (TEGs) are utilized to enhance fuel efficiency and power onboard systems. In consumer electronics, thermoelectric coolers regulate temperature in devices like laptops and smartphones while also powering wearable technologies and sensors. Healthcare applications include wearable health monitors and drug delivery systems, utilizing thermoelectric devices for thermal management and diagnostics. Smartwatches, intelligent bracelets, sunglasses, and blood pressure sensors exemplify this trend, harnessing the potential of thermoelectric materials to generate power from temperature differentials. Ag2S is a ductile thermoelectric material with a potential use in thermoelectric devices. The aim of the article was to characterize the thermoelectric Ag2S -based material and describe the impact of chosen dopants on material properties. The Seebeck coefficient of pure Ag2S is -1051 μV.K−1, the Seebeck coefficient of Sb-doped material is −2.54 μV.K−1, and that of Ge-doped material is more positive at −87 μV.K−1. Material doped with Ge shows better thermoelectric properties. [ABSTRACT FROM AUTHOR]

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Among consumed-vegetable oils, RBDPO (refined, bleached and deodorized palm oil) is indicated containing higher level of 3-MCPDE and GE, which have been classified as potentially carcinogenic and/or genotoxic to human. Those contaminants in RBDPO are formed during deodorization process with high temperature and also correlate with chloride content and quality of CPO as raw material. The maximum limit for 3-MCPDE and GE content in vegetable oil has been set at 2500 and 1000 µg kg-1, and as low as 750 and 500 µg kg-1 when used for production of baby food and cereal-based foods for infants and young children. The mitigation of 3-MCPDE and GE in RBDPO is quite challenging for palm oil refineries in producing a good quality of palm oil in term of sensory, stability, safety, and nutritional value, especially in Indonesia. It has been proven that modification of conventional refining process can reduce the 3-MCPDE and GE content. They are including pre-treatment of CPO by water washing to reduce the chloride content, alkali neutralization to remove any acids present in the oil prior to deodorization, using neutral bleaching earth, adding antioxidants after bleaching to reduce free radical-mediated formation of 3-MCPDE and GE, lowering the deodorization temperature with a longer time, and even double bleaching and/or double deodorization of the palm oil. Post-refining treatment using specific adsorbents is also applied to remove the 3-MCPDE and GE. However, palm oil refineries have to apply combination of several mitigation strategies to adequately reduce the levels of 3-MCPDE and GE, including using good quality of CPO with low FFA, chloride, and oxidized components content.

Geothelphusa dehaani, a freshwater crab species endemic to Japan, has the largest distribution range amongst the 19 known species in the country. Due to its low dispersal capability and restricted habitat to freshwater, it serves as an excellent model for understanding gene flow between geographically isolated populations. In this study, we analysed the genetic relationships of 26 G. dehaani populations collected from different locations in the Japanese archipelago using two mitochondrial DNA regions - cytochrome oxidase subunit I (COI) and cytochrome b (cytB). Our results from the analysis of molecular variance (AMOVA) revealed high genetic variation amongst populations and the phylogenetic analysis identified four geographical groups: Clade I - Honshu and Shikoku, Clade II - north-eastern Kyushu, Clade III - southern Kyushu and Clade IV - north-western Kyushu. Notably, Clade IV exhibited the highest genetic distance amongst the observed groupings. These findings highlight the need for further examination of G. dehaani in Kyushu, including morphological and behavioural traits, to better understand the observed diversity within the species in the region.

We examined the fabrication process of uniaxial tensile-strained Ge wires in micro-bridge structures by utilizing the internal stresses in deposited metal thin films. This method enables strain control by adjusting film-deposition conditions, which is advantageous over previous methods that utilize internal stresses unintentionally applied to Ge-on-insulator substrates. We evaluated the internal stresses in W films formed by sputtering deposition methods. Tensile and compressive stresses were determined based on the Ar gas pressure during the deposition process. We applied tensile strain to Ge wires using 100-nm-thick W films, each with a tensile stress of 890 MPa, deposited in 1.5-Pa Ar gas. We confirmed that strains of up to 1.62% can be achieved and controlled by tuning the structural parameters of the bridge structure with the Ge wires. Photoluminescence peaks shifted to lower energies with increasing strain, in good agreement with theoretical predictions. We also used strained Ge wires to fabricate light-emitting diodes that exhibited clear electroluminescence peaks indicative of band structural modulation in the Ge wires. [ABSTRACT FROM AUTHOR]

This paper reports trench-filling epitaxy of Ge on (001) Si using [100]-oriented patterns, which is effective to fill the micron-deep trench in a short growth time. As a starting substrate, a trench with a width of about 0.6 µm and a depth of about 1.0 µm is prepared on a (001) Si wafer. The trench is aligned in the [100] direction, which deviates by 45° from the ordinary [110] direction. A Ge epitaxial film is selectively grown inside the trench by ultrahigh-vacuum chemical vapor deposition in a molecular flux regime. The mean free path of the GeH4 source gas is orders of magnitude longer than the trench depth of 1.0 µm, sufficiently supplying GeH4 in the trench. By aligning the trench in the [100] direction, Ge growth occurs not only on the trench bottom, but also on the {010} trench sidewalls. Despite the growth thickness of 0.5 µm on the flat (001) Si surface, the 1.0-µm-deep trench is fully filled with Ge, thanks to the growth on the sidewalls. For near-infrared photodetector applications, the tensile lattice strain due to the thermal expansion mismatch between Ge and Si is theoretically discussed in such a trench-filling structure. [ABSTRACT FROM AUTHOR]

A patterned Si substrate is used to reduce the threading dislocation density (TDD) in a Ge epitaxial film for near-infrared photonic device applications. Using photolithography and dry etching, an array of submicron-wide strips with a rectangular cross-section is patterned in the [110] direction of a Si (001) wafer. A Ge film as thick as 1 µm is grown on the patterned Si by chemical vapor deposition with an ordinary two-step growth method, where a buffer layer of pure Ge as thin as 50 nm is grown at a low temperature of 370°C, followed by growth at an elevated temperature of 700°C. A Ge film is formed with a reasonably flat surface despite the non-flat starting Si surface as well as the large lattice mismatch of 4.2% between Ge and Si. The etch-pit density measurements for the Ge film exhibits TDD of about 6 × 107 cm–2, which is significantly lower than that of about 2 × 108 cm–2 for the film on the unpatterned region prepared on the same Si substrate. The TDD reduction is attributed to a trapping of the dislocations in the trench regions between the Si strips, as observed in cross-sectional transmission electron microscope images. [ABSTRACT FROM AUTHOR]

Abstract We study the electrical and morphological properties of random arrays of Ge nanowires (NW) deposited on sapphire substrates. NW-based devices were fabricated with the aim of developing chemiresistive-type sensors for the detection of explosive vapours. We present the results obtained on pristine and annealed NWs and, focusing on the different phenomenology observed, we discuss the critical role played by NW–NW junctions on the electrical conduction and sensing performances. A mechanism is proposed to explain the high efficiency of the annealed arrays of NWs in detecting 2,4,6 trinitrotoluene vapours. This study shows the promising potential of Ge NW-based sensors in the field of civil security.

We report the fabrication and electrical characterization of single-hole transistors (SHTs), in which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self-organized tunnel barriers of Si3N4. A combination of lithographic patterning, sidewall spacers, and self-assembled growth was used for fabrication. The core experimental approach is based on the selective oxidation of poly-SiGe spacer islands located at the specially designed included-angle locations of Si3N4/Si-trenches. By adjusting processing times for conformal deposition, etch back and thermal oxidation, good tunability in the Ge QD size and its tunnel-barrier widths were controllably achieved. Each Ge QD is electrically addressable via self-aligned Si gate and reservoirs, thus offering an effective building block for implementing single-charge devices.

To realize high-capacity Ge anodes for next-generation Li ^+ -ion batteries, a multilayer anode with a C(top)/Ge(middle)/C(bottom) structure was developed, where nanostructured amorphous Ge (a-Ge) and amorphous-like carbon films with a grain size of 10–20 nm were deposited sequentially by high-pressure Ar sputtering at 500 mTorr. Compared with the a-Ge anode, the C(top)/a-Ge(middle)/C(bottom) multistacking layer anode showed improved capacity degradation for repeated lithiation/delithiation reactions and achieved a high capacity of 910 mAh g ^−1 with no capacity fading after 90 cycles at a C-rate of 0.1.

Esters of 2-monochloropropane-1,2-diol (2-MCPD), 3- monochloropropane-1,2-diol (3-MCPD), and glycidol are present in infant formulas, follow-on foods and similar compositions. They arise mainly from the vegetable oil content and may cause harmful effects in consumers. The contents of these substances in formulas were determined indirectly by converting the esters to the free form, followed by derivatization and analysis by gas chromatography-tandem mass spectrometry (GC-MS/MS). The validation results demonstrate that the method had sufficient specificity and adequate accuracy. The limits of detection (LOD) and limits of quantification (LOQ) for each of 2-MCPDE, 3-MCPDE, and GE were 1.5 and 5 µg/kg, respectively. Formula intake by children up to 36 months of age was surveyed, and the data was used to assess the risks due to 3-MCPD esters (3-MCPDE) and glycidyl esters (GE). The mean exposure dose of 3-MCPDE for different age groups ranged from 0.51 to 1.13 µg/kg bw per day. The corresponding mean GE exposure ranged from 0.031 to 0.069 µg/kg bw per day. Neither mean values nor the percentile 95% values of 3-MCPDE exposure doses exceed the recommended provisional maximum tolerable daily intake (PMTDI). [ABSTRACT FROM AUTHOR]

In this research, we present numerical simulations of the electromagnetic properties of a Ge/SiO2 grating structure with a distributed Bragg reflector at the bottom for efficient infrared absorption. We developed a single-period model to simulate an infinite periodic structure and used a Flouquet boundary condition to ensure periodic continuity. We verified the model's accuracy by testing different mesh densities and comparing the results to theoretical calculations based on Fresnel equations. We found that using 13 meshes per wavelength resulted in an error of less than 1%. Our simulations showed that the structure has a wide incident angle range of 100 degrees at a wavelength of 1550 nm. The absorbance spectrum of the design exhibits broadband properties, covering the primary wavelengths used in optical communications. The absorbance peaks reached 85.95% and 77.08% at 1340 and 1545 nm, respectively, with a minimum absorbance of 40% around 1400 nm. [ABSTRACT FROM AUTHOR]

This article primarily explores the electronic properties and geometrical structures of a Ge13 cluster with single-atom doped X (Ta, Fe, Pd and Co) based on density functional theory (DFT). The spin-polarized exchange correlation functional was used to analyze the isomers of doped Ge12X clusters generally to classify the stable structures. This work explores the diverse doping positions and magnetic parameters on each isomer. The analysis indicates that the Ta, Fe, Pd and Co doped Ge12X with cuboctahedral and decahedral structures have the lowest energy structures, whereas Ge13 mainly favors a cuboctahedral structure. The different doping atom positions contribute to strengthening the stability of the Ge12X cluster structures. Moreover, the Bader charge analysis of doped Ge12X reveals −0.3e accumulated for the dopant Ta as an electron donor in the cluster while other dopants tend to accept the electrons and the HOMO–LUMO gap is notably reduced. Density of states (DOS) analysis indicates that doped Ge12X is semimetallic and is capable of holding magnetism. In general, this work summarizes the relevance of inserting the doped atom at a strategic position on the Ge11X2 cluster in finding the stable structure. [ABSTRACT FROM AUTHOR]

We demonstrated the surface treatment of polyimide using solid-source H2O plasma for the fabrication of Ge thin films as an electrode of flexible devices. By using the solid-source H2O plasma, the internal stress of a polyimide sheet with deposited Ge was decreased, and the adhesion between the polyimide and Ge was also improved. In addition, the solid-source H2O plasma treatment was effective for increasing the bending durability and decreasing the resistance of the Ge electrode on a polyimide surface. Moreover, we analyzed a polyimide surface treated with solid-source H2O plasma, by Fourier transform IR spectroscopy and X-ray photoelectron spectroscopy. We believe that the proposed solid-source H2O plasma process is useful for bonding between polyimide and Ge in the fabrication of flexible semiconductor electrodes. [ABSTRACT FROM AUTHOR]

Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the charge carriers in the device channel. The Ge 2DHG is particularly interesting, since Ge exhibits the highest hole mobility among all semiconductors. In this paper, we report on the temperature-dependent direct current-characteristics of normally-on MODFETs based on a high mobility Ge 2DHG. Here, we specifically investigate device characteristics down to cryogenic temperatures and analyze the impact of different MOD-doping on device performance. We find that the largest On-Off ratio of I On / I Off = 3.2 × 10 6 and lowest sub-threshold swing (SS) of SS = 64 mV de c − 1 at a temperature of T = 7.5 K are attained for a MOD-doping of N A = 5 × 10 17 c m − 3 , while the highest effective mobility μ eff = 864 c m 2 V − 1 s − 1 is obtained from a device with a MOD-doping of N A = 1.1 × 10 18 c m − 3 . Furthermore, while effective mobilities in the devices are strongly reduced compared to Hall mobilities measured in the unstructured Ge 2DHGs, both quantities can be seen to follow a similar trend. Our results motivate further investigations of Ge 2DHG MODFETs for applications in cryogenic low-noise amplifiers, besides their well-established potential for spintronic applications. [ABSTRACT FROM AUTHOR]

In this paper, Cu2 ZnSnSe4 (CZTSe) thin films were prepared by solution method. A small amount of Ge was added into the solution and the effect of Ge incorporation on the properties of CZTSe thin films and devices was investigated. For comparison, two sets of CZTSe thin films and corresponding solar cells, namely CZTSe without Ge and CZTSe with a small amount of Ge [Cu2 Zn(Sn, Ge)Se4, CZTGSe] were prepared. The crystal structure, phase purity, surface morphology, and carrier concentration of the prepared thin films, as well as the electrical properties of the complete devices were characterized and analyzed by X-ray diffractometer (XRD), Raman spectra, scanning electron microscopy (SEM), Hall measure system, current voltage (J-V) curve, and external quantum efficiency (EQE) tests, respectively. The results demonstrate that Ge incorporation into the CZTSe film promotes the crystallization mainly due to the formation of Ge-Se liquid flux during the selenization process, reduces the number of grain boundaries and the minority carriers recombination at the grain boundaries and enhances the carrier lifetime. In addition, partial substitution of Ge for Sn reduces the density of defect states associated with Sn, increases the energy band gap and open circuit voltage, improves the series and parallel resistance, and thus increases the fill factor. Finally, the prepared CZTGSe thin film solar cells reach a photoelectric conversion efficiency of 8.83% with open circuit voltage of 513.2 mV, short circuit current of 27.47 mA/cm2 and fill factor of 62.68%. [ABSTRACT FROM AUTHOR]

We study the electrical and morphological properties of random arrays of Ge nanowires (NW) deposited on sapphire substrates. NW-based devices were fabricated with the aim of developing chemiresistive-type sensors for the detection of explosive vapours. We present the results obtained on pristine and annealed NWs and, focusing on the different phenomenology observed, we discuss the critical role played by NW–NW junctions on the electrical conduction and sensing performances. A mechanism is proposed to explain the high efficiency of the annealed arrays of NWs in detecting 2,4,6 trinitrotoluene vapours. This study shows the promising potential of Ge NW-based sensors in the field of civil security. [ABSTRACT FROM AUTHOR]

Metal-assisted chemical etching (MACE) is a flexible technique for texturing the surface of semiconductors. In this work, we study the spatial variation of the etch profile, the effect of angular orientation relative to the crystallographic planes, and the effect of doping type. We employ gold in direct contact with germanium as the metal catalyst, and dilute hydrogen peroxide solution as the chemical etchant. With this catalyst-etchant combination, we observe inverse-MACE, where the area directly under gold is not etched, but the neighboring, exposed germanium experiences enhanced etching. This enhancement in etching decays exponentially with the lateral distance from the gold structure. An empirical formula for the gold-enhanced etching depth as a function of lateral distance from the edge of the gold film is extracted from the experimentally measured etch profiles. The lateral range of enhanced etching is approximately 10–20 μ m and is independent of etchant concentration. At length scales beyond a few microns, the etching enhancement is independent of the orientation with respect to the germanium crystallographic planes. The etch rate as a function of etchant concentration follows a power law with exponent smaller than 1. The observed etch rates and profiles are independent of whether the germanium substrate is n-type, p-type, or nearly intrinsic. [ABSTRACT FROM AUTHOR]

Simple Summary: Porcine pseudorabies is a virulent infectious disease of domestic and wild animals caused by pseudorabies virus. Especially since 2011, the prevalence of mutant strains in China has caused severe economic losses to its breeding industry. As a marker protein, gE glycoprotein can distinguish wild strains from vaccine strains. Therefore, we are committed to obtaining a monoclonal antibody against the gE glycoprotein. We are also studying its characteristics to further explore its application value. In this study, we used a novel immunization and screening strategy to prepare a monoclonal antibody and obtained the monoclonal antibody 1H5 against the gE glycoprotein. An indirect immunofluorescence assay revealed that this monoclonal antibody was specific to both classic and variant strains of pseudorabies virus. Subsequently, we identified the linear epitopes of B cells recognized using the monoclonal antibody. The monoclonal antibody 1H5 bound at 67RRAG70, which is a novel epitope and is conserved in almost all pseudorabies virus strains. This study provides a new idea for the preparation of monoclonal antibodies. Since 2011, pseudorabies virus (PRV) has recurred in several vaccinated pig farms in China. PRV variants with high virulence were found to be the main cause of the outbreaks. In the face of the PRV epidemic, detection of the wild strain is as important as vaccine immunization, so we hoped to achieve differential diagnosis of PRV by obtaining a monoclonal antibody (mAB) that could be used to identify the wild strain. In this study, we used a novel immunization and screening strategy to prepare an mAB and obtained mAB 1H5 against the gE glycoprotein. An immunofluorescence assay (IFA) revealed that this mAB was specific to both classic and variant strains of PRV. Subsequently, we further identified the linear epitopes of B cells recognized using the mAB. The mAB 1H5 bound at 67RRAG70, which is a novel epitope and is conserved in almost all PRV strains. These findings provide novel insight into the structure and function of PRV proteins, the analysis of antigenic epitope characteristics, and the establishment of antigen or antibody detection methods. [ABSTRACT FROM AUTHOR]

Ge is an attractive alternative to replace Si as the body material for scaled CMOS technologies. This work comprehensively investigates hot-electron generation and injection in the Ge-based channel body and gate dielectric charge-trapping memory. This study numerically elucidates the mechanisms of transverse dielectric and lateral channel band engineering used in source-side and drain-side injection. Various Ge- and Si-based cells are compared to determine the optimal low-voltage energy-efficient cells. The Ge-body cells with Si-based gate dielectrics have slightly higher source-side and drain-side injection than their Si-body counterparts based on their intrinsic dielectric barriers and impact ionization rates. The Ge-based gate dielectric has a key function in tailoring the transverse dielectric barriers for hot-electron injection, while the Schottky barrier source/drain plays a major role in controlling the lateral channel band bending of high-field spots for efficient source-side injection. Incorporating the Ge-based gate dielectrics and Schottky barrier source/drain into the Ge-body, the Ge-based charge-trapping cell can be separately optimized in terms of the lateral channel and the transverse dielectrics to ensure the most efficient low-voltage injection, serving as a promising green cell. [ABSTRACT FROM AUTHOR]

In this paper the performance analysis of nanowire has been presented. The comparison of Si Nanowire FET and Ge Nanowire FET has been carried out. The sub threshold slope of Si Nanowire FET is 74.50 mV/dec and in the case of Ge nanowire is FET 64.38 mV/dec. Further it is analyzed that the observed Ion/Ioff ratio of Si nanowire FET is 3.94 × 107 and Ge Nanowire FET is 1.84 × 107 which is very high in the case of Si Nanowire FET as compare to Ge nanowire FET. The overall simulation analysis is done using TCAD Silivaco tool. [ABSTRACT FROM AUTHOR]

We propose a method for obtaining crack-free fully-strained SiGe layers on Ge(111). To achieve the crack-free strained SiGe layers, we introduce a patterned area with a sufficient depth (step height) of more than 1 μ m on Ge(111) substrates. Because of the complete suppression of the crack propagation from the SiGe layer grown on the outside of the patterned area on Ge(111), we achieve crack-free fully strained SiGe layers on the inside of the patterned area. This approach will drastically expand the applicability of the strained SiGe to the fields of Si photonics and spintronics. [ABSTRACT FROM AUTHOR]