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As a multiferroic material with substantial magnetoelectric coupling, gallium ferrite (GaFeO3, GFO) has been intensively studied in recent years. Cobalt ferrite (CoFe2O4, CFO) nano-hollowsphere (NHS), on the other hand, is found to be an efficient material for electromagnetic (EM) wave absorption. In this work, a composite consisting of magnetostrictive CFO NHS coated with GFO nanoparticles [(1−x)CoFe2O4 – xGaFeO3, for x = 0.0, 0.9, 0.7, 0.5, 0.3, and 1.0] is prepared as an effective strategy to develop highly efficient microwave material. The EM wave absorption properties of the samples are thoroughly investigated across a widely used frequency range of 1–20 GHz. Remarkable performance of the x = 0.7 composite is evident by its effective bandwidth of approximately 3 GHz and a minimum reflection loss of approximately −63.26 dB. Moreover, the excellent impedance matching, with |Zin/Z0| ≅ 1.00, observed in the aforementioned composite, satisfies well with the required characteristics for a superior microwave absorber. Therefore, a core–shell nanostructure consisting of CFO NHS as core and GFO with optimized shell thickness can be used successfully in microwave devices. [ABSTRACT FROM AUTHOR]

β-(AlxGa1−x)2O3 presents a diverse material characterization exhibiting exceptional electrical and optical properties. Considering the miniaturization of gallium oxide devices, two-dimensional (AlxGa1−x)2O3 alloys, as a critical component in the formation of two-dimensional electron gases, demand an in-depth examination of their carrier transport properties. Herein, we investigate the temperature-dependent carrier mobility and scattering mechanisms of quasi-two-dimensional (2D) (AlxGa1−x)2O3 (x ≤ 5) by solving the Boltzmann transport equation from first-principles. Anisotropic electron mobility of 2D (AlxGa1−x)2O3 is limited to 30−80 cm2/Vs at room temperature, and it finds that the relatively large ion-clamped dielectric tensors (Δɛ) suggest a major scattering role for polar optical phonons. The mobility of 2D (AlxGa1−x)2 is less than that of bulk β-(AlxGa1−x)2O3 and shows no quantum effects attributed to the dangling bonds on the surface. We further demonstrate that the bandgap of 2D (AlxGa1−x)2O3 decreases with the number of layers, and the electron localization function also shows an anisotropy. This work comprehensively interprets the scattering mechanism and unintentional doping intrinsic electron mobility of (AlxGa1−x)2O3 alloys, providing physical elaboration and alternative horizons for experimental synthesis, crystallographic investigations, and power device fabrication of 2D (AlxGa1−x)2O3 atomically thin layered systems. [ABSTRACT FROM AUTHOR]

Optical and electrical properties of Hf- and Zn-doped β-Ga2O3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga2O3:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga2O3:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga2O3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies. [ABSTRACT FROM AUTHOR]

Optical and electrical properties of Hf- and Zn-doped β-Ga2O3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga2O3:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga2O3:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga2O3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies. [ABSTRACT FROM AUTHOR]

GaCH2, a free radical thought to play a role in the chemical vapor deposition of gallium-containing thin films and semiconductors, has been spectroscopically detected for the first time. The radical was produced in a pulsed discharge jet using a precursor mixture of trimethylgallium vapor in high pressure argon and studied by laser-induced fluorescence and wavelength resolved emission techniques. Partially rotationally resolved spectra of the hydrogenated and deuterated species were obtained, and they exhibit the nuclear statistical weight variations and subband structure expected for a 2A2–2B1 electronic transition. The measured spectroscopic quantities have been compared to our own ab initio calculations of the ground and excited state properties. The electronic spectrum of gallium methylene is similar to the corresponding spectrum of the aluminum methylene radical, which we reported in 2022. [ABSTRACT FROM AUTHOR]

The effect of high temperature annealing under O2 and N2 atmospheres on the electrical properties and defect formation on Sn doped n-type β-Ga2O3 bulk samples was investigated by electron paramagnetic resonance (EPR) spectroscopy. EPR, being a volume sensitive technique, probes the entire sample volume. Our results show an electrical compensation being correlated with the formation of a negatively charged Ga vacancy defect VGa2−. This VGa center is different from the one observed after particle irradiation. The associated shift of the Fermi level reveals the presence of Fe3+, Cu2+, and Cr3+, which are residuals related to the growth conditions. The 1100 °C N2 annealed sample is fully compensated, and the neutral donor resonance is no longer observed. Our results directly confirm the thermal instability of Ga and Sn in n-type conducting samples. No oxygen vacancy related centers were detected. We discuss the various Ga vacancy centers reported previously. [ABSTRACT FROM AUTHOR]

Gadolinium gallium aluminum garnet doped with cerium (GGAG:Ce), a promising ceramic scintillator material, is being excessively explored for its high quality optical properties by the bandgap engineering with different Ga/Al ratio. In this study, GGAG:Ce powders were synthesized using a solvothermal method and sintered at 1300 °C to investigate the impact of the gallium-to-aluminum (Ga/Al) ratio on optical characteristics. The results revealed that a decrease in the Ga/Al ratio led to a decrease in particle size. This observation can be attributed to the different reactivity and growth kinetics of gallium and aluminum precursors during the solvothermal process. Perturbations from the optimized Ga/Al ratio of 1.5–1.77 and 1.27 resulted in substantially enhanced photoluminescence (PL) and radioluminescence (RL) spectra intensities. PL lifetime measurements of various Ga/Al ratio exhibit average PL lifetime between 48 and 57 ns. Specifically, the deviations to 1.77 and 1.27 ratios yielded approximately 125 % and 106 %, respectively, in observed luminescent measurements compared to other ratios. This enhancement in PL and RL intensity suggests that the Ga/Al ratio plays a critical role in modulating the optical properties of GGAG:Ce ceramic powders. The results of this study also highlight the importance of the Ga/Al ratio in tailoring the optical or luminescence characteristics of GGAG:Ce powders. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin, on Ga2O3 samples using a disclosed initiated chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga2O3 through a heat treatment process. Diffusion model of Sn into the Ga2O3 is proposed through secondary ion mass spectroscopy analysis and bond dissociation energy. The fabricated device exhibited typical n-type field-effect transistor (FET) behavior. Ga2O3 Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga2O3-based power semiconductor device manufacturing process. [ABSTRACT FROM AUTHOR]

Single‐phase NaGa4 samples were prepared by annealing stoichiometric element mixtures at 200 °C, 300 °C, and 450 °C in closed tantalum ampoules. No compositional homogeneity range was detected. While single crystals annealed at 200 °C feature a fully ordered crystal structure, a crystal annealed at 300 °C reveals a defect with mutual exchange of Na atoms and Ga2 dumbbells. The structure motif caused by the violation of translational symmetry resembles the CeMg2Si2 type of structure. The NaGa4 structure constitutes a branch of the BaAl4 type distinguished by a notably high c/a ratio (space group I4/mmm; a=4.2261(1) Å, c=11.2633(6) Å, c/a=2.67). This distortion enables the adaption of the BaAl4‐type to small cations, when the further shortening of the apical–apical distance d(Ga–Ga) is not possible any more. Therefore, NaGa4 offers an adaption alternative to the monoclinic distortion observed in CaGa4 and YbGa4. Conductivity measurements validate the metallic behavior anticipated by NMR measurements in earlier studies. [ABSTRACT FROM AUTHOR]

Single‐phase NaGa4 samples were prepared by annealing stoichiometric element mixtures at 200 °C, 300 °C, and 450 °C in closed tantalum ampoules. No compositional homogeneity range was detected. While single crystals annealed at 200 °C feature a fully ordered crystal structure, a crystal annealed at 300 °C reveals a defect with mutual exchange of Na atoms and Ga2 dumbbells. The structure motif caused by the violation of translational symmetry resembles the CeMg2Si2 type of structure. The NaGa4 structure constitutes a branch of the BaAl4 type distinguished by a notably high c/a ratio (space group I4/mmm; a=4.2261(1) Å, c=11.2633(6) Å, c/a=2.67). This distortion enables the adaption of the BaAl4‐type to small cations, when the further shortening of the apical–apical distance d(Ga–Ga) is not possible any more. Therefore, NaGa4 offers an adaption alternative to the monoclinic distortion observed in CaGa4 and YbGa4. Conductivity measurements validate the metallic behavior anticipated by NMR measurements in earlier studies. [ABSTRACT FROM AUTHOR]

[Display omitted] To achieve rapid preparation of hydrogels without using conventional chemical initiators, a stable suspension of eutectic gallium indium (EGaIn) liquid metal nanoparticles is explored by probe-sonicating the metal in an aqueous solution. Liquid metal suspension was sonicated to serve as a photo-initiator for acrylamide polymerization and produce hydrogels. The initiation effect comes from the fact that liquid metal suspension after sonication can produce a large number of free radicals when exposed to ultraviolet (UV) radiation, leading to initiation. The changes of liquid metal nanodroplets under UV light irradiation have been systematically investigated. Further, the liquid metal colloidal solutions were used to prepare hydrogels with the same transparency and adjustable mechanical properties as the samples initiated by commercial photo-initiators. This work shows the great application potential of liquid metal in the preparation of hydrogels and provides a new technical idea for the design of multifunctional hydrogels. [ABSTRACT FROM AUTHOR]

This work investigated the optical and scintillation properties of cerium-doped gadolinium aluminum gallium garnet (Ce:GAGG) ceramics with different gallium-to-aluminum (Ga/Al) ratios. The optical transmittance, fluorescence spectra, fluorescence lifetime, light yield, scintillation decay, and afterglow characteristics of the ceramic samples were studied. The experimental results reveal that the decay time of Ce:GAGG ceramic is significantly decreased with the increase of Ga content. The mean decay time of 60 ns is achieved when the Ga/Al ratio is 3:2 in our experiment. The light yield of ceramics varies from 12,140 to 44,825 ph/MeV with the change of Ga content, and the highest light yield is achieved when the Ga/Al ratio is 2.4:2.6. Noteworthy fluctuation in the afterglow performance is affected by the Ga content significantly. The afterglow intensity of the sample with Ga/Al = 2:3 is approximately 0.5 % of its initial intensity after the X-ray excitation was turned off for 5 s. The formation mechanism of defects which is related with the afterglow behaviors were investigated and discussed. [ABSTRACT FROM AUTHOR]

The emergence of multidrug-resistant Pseudomonas aeruginosa isolates is a growing concern for public health, necessitating new therapeutic strategies. Gallium nitrate [Ga(NO3)3], a medication for cancer-related hypercalcemia, has attracted great attention due to its ability to inhibit P. aeruginosa growth and biofilm formation by disrupting iron metabolism. However, the antibacterial efficacy of Ga(NO3)3 is not always satisfactory. It is imperative to investigate the factors that affect the bactericidal effects of Ga(NO3)3 and to identify new ways to enhance its efficacy. This study focused on the impact of pH on P. aeruginosa resistance to Ga(NO3)3, along with the underlying mechanism. The results indicate that acidic conditions could increase the effectiveness of Ga(NO3)3 against P. aeruginosa by promoting the production of pyochelin and gallium uptake. Subsequently, using glutamic acid, a clinically compatible acidic amino acid, the pH was significantly lowered and enhanced the bactericidal and inhibitory efficacy of Ga(NO3)3 against biofilm formation by P. aeruginosa, including a reference strain PA14 and several multidrug-resistant clinical isolates. Furthermore, we used an abscess mouse model to evaluate this combination in vivo; the results show that the combination of glutamic acid and Ga(NO3)3 significantly improved P. aeruginosa clearance. Overall, the present study demonstrates that acidic conditions can increase the sensitivity of P. aeruginosa to Ga(NO3)3. Combining glutamic acid and Ga(NO3)3 is a potential strategy for the treatment of P. aeruginosa infections. [ABSTRACT FROM AUTHOR]

Diffusion of Ge donors in β‐Ga2O3 is studied using a combination of secondary‐ion mass spectrometry, diffusion simulations, and first‐principles calculations, and compared to previous studies on Sn diffusion. Ge is implanted into (2¯$\bar{2}$01)‐oriented samples and annealed at temperatures from 900 to 1050 °C for a total of 8 h. From previous first‐principles calculations, Sn is predicted to diffuse via the formation of a mobile complex with VGa that migrates through a sequence of exchange and rotation jumps. Herein, it is similarly predicted that Ge diffusion is mediated by VGa. However, the microscopic mechanism differs, as Ge can diffuse more easily through exchange combined with complex dissociation, rather than rotational jumps. This is explained by the difference in Ga‐site preference of Ge compared to Sn, and the three‐split mechanism that enables low migration barriers for VGa. The dissociation mechanism leads to a considerably faster transport for Ge as compared to Sn. The experimentally obtained Ge diffusion profiles are successfully fitted using a reaction–diffusion model based on the predicted diffusion mechanism, yielding a migration barrier of 2.5 ± 0.2 eV for the complex. The 2.72 eV obtained from first‐principles calculations is in good agreement with this value. [ABSTRACT FROM AUTHOR]

Although the adduct of aluminum trichloride with thionyl chloride has been reported, no thionyl chloride adduct of a main group element Lewis acid or organometallic compound has been structurally characterized. In this communication we present the synthesis and reactivity of the structurally ascertained adduct of thionyl chloride with tris(pentafluoroethyl)gallane as a representative of a main group element Lewis acid. Gallium and indium compounds with electron withdrawing groups, e.g. the pentafluoroethyl ligand, display versatile properties. While gallates and indates, [MR4]−, behave as weakly coordinating anions, neutral gallanes and indanes, MR3, are strong Lewis acids. Salts with the tetrakis(pentafluoroethyl)gallate and ‐indate, [M(C2F5)4]− (M=Ga, In), have recently been studied in detail. In contrast to this, work on the syntheses of the free Lewis superacids M(C2F5)3 (M=Ga, In) is scarce and underdeveloped. The hydrates [M(C2F5)3(OH2)2] proved to be suitable starting materials, particularly due to their thermal stability. Herein we report on synthesis and characterization of reactive adducts, [M(C2F5)3D], with the weak donor molecules (D) SOCl2 and Me3SiF. The effective Lewis acidities of Ga(C2F5)3 and In(C2F5)3 were experimentally determined by the (modified) Gutmann‐Beckett method and their catalytic potential is showcased. [ABSTRACT FROM AUTHOR]

Gallium and indium, metals present in light-emitting diode (LED) lighting technology, can be effectively recovered from aqueous solutions by sorption. For this purpose, carbonaceous materials, such as activated carbon, or low-cost biosorbents as beer bagasse, spent coffee grounds or peanut shells, and a low-cost zeolite as chabazite, were characterized by BET, FTIR, XRD, and SEM analysis prior use. Protonated chabazite, with high surface area (505 m2/g) and a Si/Al molar ratio of 3.4, showed high sorption capacities for gallium (56 mg/g) and indium (92 mg/g), which is 10 to 30 times higher than those of our carbonaceous materials (T = 298 K, pH < 3, dosage = 1 g/L). Sorption experiments with both metals in solution showed a competitive effect between gallium and indium for the sorption sites of the chabazite, showing more affinity toward gallium than indium. Ga3+sorbed/In3+sorbed molar ratio above 2 was achieved for the same initial concentration of both metals, increasing to almost 3 when the initial gallium concentration increased, which was appropriate since gallium concentration tends to be higher in LED chips. However, the sorption capacity for both metals was always around 0.35 mmol Ga + In/g. The selectivity of the chabazite was conditioned by different behavior of both metals in aqueous solution at the sorption pH (below 3.5) being the predominant species in solution Ga(OH)2+ for gallium and In3+ for indium. Sorption with protonated chabazite can be used in the treatment of spent LEDs leachate for the dual purpose of water purification and selective metal separation. [ABSTRACT FROM AUTHOR]

Summary The article introduces liquid metals as materials, showcasing extreme modulation of interfacial tension, which can be perceived by the naked eye, while exhibiting a high degree of sustainability. Therefore, we recommend the use of liquid metals in chemical education in schools and universities. [ABSTRACT FROM AUTHOR]

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This paper provides an overview of methods used to recover gallium from Bayer liquors, highlights and analyzes shortcomings of the current state of research, and predicts the direction of recovery processes in the future. Currently, techniques for recovering gallium from Bayer liquor can be classified as resin ion exchange, solvent extraction, precipitation, and electrochemical. Compared with other recovery methods, the precipitation method is inexpensive but suffers from disadvantages regarding the relatively complex procedures and poor recovery results. Electrochemical methods do not change the solution composition but suffer from low electrolysis efficiency and high mercury content. Solvent extraction methods are simple to operate but complex to separate effectively because of low gallium concentrations. The resin ion exchange method has become the primary method of gallium recovery from Bayer liquor due to its simple operation, high recovery efficiency, and low contamination. Recently, researchers have discovered more efficient methods for recovering gallium based on resin ion exchange: impregnated resin methods and ion blotting. The impregnated resin method combines high adsorption efficiency with extractant selectivity but still suffers from extractant loss problems. Ion impregnation has the advantage of specific adsorption of target ions in complex systems, and its preparation process is improving, which will be a new research hotspot in the future. [ABSTRACT FROM AUTHOR]

Address to low recovery rates of gallium in the process of zinc hydrometallurgy by two-stage countercurrent oxygen pressure leaching in a smelter, XRD, SEM-EDS and ICP-AES were used to analyze the solutions and residues phases at each stage of the process, and the mechanism of the influence of pre-neutralization and zinc powder replacement on the low gallium recovery was investigated. The results show that the co-precipitation of gallium with jarosite or plumbojarosite due to the low acidity during the pre-neutralization of the primary leaching solution is the cause of gallium loss. In the process of zinc powder replacement, gallium cannot be precipitated completely by increasing pH value only by zinc powder. It is suggested that the acidly of the end point of the preneutralization is controlled to 6 g/L, the reaction time is one hour, and the reaction temperature is 85 °C to avoid gallium loss during the preneutralization process. In the replacement stage, the method of first neutralization and then replacement is adopted: 7 g/L high-quality zinc oxide is used for neutralization reaction for one hour, and then 3 g/L zinc powder Is added for reaction for one hour at 85 °C. After optimization, the precipitatlon rate of gallium can reach 100%. [ABSTRACT FROM AUTHOR]

The design of various cycloaddition/annulation processes is one of the most intriguing challenges in the development of donor‐acceptor (D–A) cyclopropane chemistry. In this work, a new class of formal high‐order [6+n]‐cycloaddition and annulation processes of D–A cyclopropanes with cycloheptatriene systems has been designed and reported, to fill a significant gap in the chemistry of D–A cyclopropanes. The reactivity of methylated cycloheptatrienes from Me1 to Me5 as well as unsubstituted cycloheptatriene was studied in detail under GaCl3 activation conditions, which makes it possible to efficiently generate gallium 1,2‐zwitterionic complexes or 1,3‐zwitterionic intermediates starting from D–A cyclopropanes, while other Lewis acids are ineffective and non‐selective. New examples of formal [6+2]‐, [6+3]‐, [6+4]‐, [6+1]‐, and [4+2]‐cycloaddition and annulation reactions with cycloheptatrienes along with more complex processes were discovered. Cycloheptatriene itself can also successfully act as a hydride anion donor, which allows the ionic hydrogenation of D–A cyclopropanes to be performed under mild conditions. As a result, a number of efficient and highly diastereoselective protocols for the synthesis of seven‐membered carbocycles has been developed. [ABSTRACT FROM AUTHOR]

Extremely limited research exploring the photocatalytic potential of main group metals, such as aluminum, gallium, and tin, has been undertaken due to their weak light harvesting properties. This study reports the efficient transformation of sugars to 5‐hydroxymethylfurfural (HMF) with high yield employing an original heterogeneous photocatalyst comprising a gallium(III) complex immobilized on an alumina support. Under visible light irradiation, the reaction rate of HMF formation is ~143 times higher than the equivalent thermal reaction performed in the absence of light. The turnover number (TON) of the heterogeneous gallium(III) photocatalyst was as high as 1500, which was ca. two orders of magnitude higher than the TON of the homogeneous gallium(III) system. It is proposed that photoirradiation significantly enhances the Lewis acidity of the catalyst by forming a semi‐coordination state between gallium(III) and N‐donor ligands, enabling the increased interaction of reactant sugar molecules with gallium(III) active sites. Consistent with this, the photoresponsive coordination of the gallium(III) complex and the abstraction of the hydroxy group by the metal under irradiation with visible light is observed by NMR spectroscopy for the first time. These findings demonstrate that efficient photocatalysts derived from the main group elements can facilitate biomass conversion using visible light. [ABSTRACT FROM AUTHOR]

Various kinds of boron complexes have been utilized as functional luminescent materials. However, only a limited number of emissive complexes containing other group 13 elements have been reported. Herein, we report the synthesis and optical properties of luminescent ß-diketiminate complexes containing a series of group 13 elements. The synthesized complexes exhibited crystallization-induced emission properties. It was indicated that the heavier group 13 elements accelerate intersystem crossing from the singlet to the triplet excited state because of the strong heavy atom effect. Finally, we discovered that aluminum and gallium complexes can work as solid-state luminescent materials with high emission efficiencies. [ABSTRACT FROM AUTHOR]

Gallium-based therapy has been considered a potentially effective cancer therapy for decades and has recently re-emerged as a novel therapeutic strategy for the management of glioblastoma tumors. Gallium targets the iron-dependent phenotype associated with aggressive tumors by mimicking iron in circulation and gaining intracellular access through transferrin-receptor-mediated endocytosis. Mechanistically, it is believed that gallium inhibits critical iron-dependent enzymes like ribonucleotide reductase and NADH dehydrogenase (electron transport chain complex I) by replacing iron and removing the ability to transfer electrons through the protein secondary structure. However, information regarding the effects of gallium on cellular iron metabolism is limited. As mitochondrial iron metabolism serves as a central hub of the iron metabolic network, the goal of this study was to investigate the effects of gallium on mitochondrial iron metabolism in glioblastoma cells. Here, it has been discovered that gallium nitrate can induce mitochondrial iron depletion, which is associated with the induction of DNA damage. Moreover, the generation of gallium-resistant cell lines reveals a highly unstable phenotype characterized by impaired colony formation associated with a significant decrease in mitochondrial iron content and loss of the mitochondrial iron uptake transporter, mitoferrin-1. Moreover, gallium-resistant cell lines are significantly more sensitive to radiation and have an impaired ability to repair any sublethal damage and to survive potentially lethal radiation damage when left for 24 h following radiation. These results support the hypothesis that gallium can disrupt mitochondrial iron metabolism and serve as a potential radiosensitizer. [ABSTRACT FROM AUTHOR]

In recent years, transparent terbium gallium garnet (TGG) ceramics have garnered significant interest for their application in high‐power Faraday isolators. However, challenges in achieving high transparency have led researchers to explore the addition of various sintering aids as a key strategy to enhance the optical quality of TGG ceramics. Through this work, the effect of germanium (Ge) addition on the microstructure and optical transparency of TGG magneto‐optical ceramics was investigated. TGG powders were synthesized by the co‐precipitation method, and the source Ge was Ge ethoxide added through a ball‐milling step. Transparent TGG ceramics were prepared by air pre‐sintering combined with hot isostatic pressing post‐treatment and subsequent annealing. The ceramics containing 200 ppm Ge exhibit optimal transmittance of 81.3% at 1064 nm (a value of theoretical transmittance), the Verdet constant was −133.0 rad·T−1·m−1 at 633 nm. When the addition of Ge reaches 600 ppm, a secondary phase can be observed on the surface of ceramic. Subsequently, TGG ceramics prepared from 1425°C to 1500°C with 200 ppm of Ge were analyzed, which revealed that the optimal pre‐sintering temperature is 1450°C. [ABSTRACT FROM AUTHOR]

The cost‐effectiveness and environmental benefits of aqueous zinc‐ion batteries (ZIBs) have attracted considerable attention. However, practical applications are hindered by side processes including dendritic growth and hydrogen evolution corrosion. Herein, gallium ions (Ga3+) have been chosen as a multifunctional electrolyte additive to improve the reversibility of zinc‐ion batteries (ZIBs). Remarkably, Ga3+ ions adhere to the anode surface, establishing a dynamic electrostatic shielding layer that modulates Zn2+ deposition and prevents side reactions. Typically, Ga3+ ions preferentially adsorb onto the (002) and (110) planes of Zn, facilitating preferential deposition on the (100) plane, resulting in a dendrites‐free zinc anode. Consequently, the Zn||Zn symmetrical cell with Ga3+‐modified electrolyte demonstrates a prolonged lifespan of 4000 h, while the Zn||Ti asymmetric cell exhibits an impressive coulombic efficiency of 99.12% for zinc stripping and plating at 2 mA cm−2. Additionally, the Zn||VO2 cell maintains high capacity retention after 1500 cycles at 5 A g−1. This work presents Ga3+ ions as an electrolyte additive, facilitating the development of a durable dynamic electrostatic shielding effect and preferential (100) plane electroplating, ensuring zinc deposition free from dendrite formation. Such discoveries form a basis for future investigations into novel materials to propel advancements in metal battery technology. [ABSTRACT FROM AUTHOR]

In the present communication, binary (ZnO:Ga 2 O 3 - 1:1 (ZGO), ZnO:Ga 2 O 3 - 2:1 (GaZn))/ternary (EZG (Eu 2 O 3 : ZnO: Ga 2 O 3 (1:1:1)), MZG (MgO: ZnO: Ga 2 O 3 (1:1:1)) NCs are synthesized by P i p e r b e t l e leaves extract as a reducing agent followed by calcination at 600 °C for 3 h. The Bragg reflections confirms the formation of single phase cubic symmetry with F d 3 m space group in ZGO NCs whereas reflections related individual metal oxides are observed in the GaZn, EZG and MZG NCs. The irregular size and shaped nanoparticles are observed in all the synthesized NCs. The tuned band gap was found to be in the range of 3.08 to 3.11 eV. The optical nonlinearity of the specimens was analyzed using the open aperture Z-scan technique. The material demonstrated reverse saturable absorption attributed to a two-photon absorption (2PA) process. The non linear absorption coefficient follows the order MZG > GaZn > ZGO > EZG. However, the optical limiting threshold follows the order ZGO > GaZn > MZG > EZG NCs with increase in energy band gap. These outcomes distinctly indicate the superior potential of GaZn binary NCs for optical limiting applications. This characteristic is advantageous for shielding sensors and the human eye, safeguarding them against the detrimental effects of intense green laser radiation. [ABSTRACT FROM AUTHOR]

In this study, we successfully synthesized three gallium oxide thin films on (0001)-faceted Al 2 O 3 substrates using hydrogen-reduced chemical vapor deposition (CVD) at different deposition temperatures, resulting in distinct morphologies and crystalline phases. These films consist of two pure-phase β-Ga 2 O 3 films and one mixed-phase film comprising both β- and ε-Ga 2 O 3 phases. The mixed-phase samples were subsequently annealed at high temperatures to obtain pure-phase β-Ga 2 O 3 thin films. Furthermore, by precisely controlling the growth temperature, we achieved in-situ formation of Ga 2 O 3 nanostructures (nanowires and nanoribbons) on the surface of the β-Ga 2 O 3 thin films. The presence of different dominant crystal planes in the samples was confirmed through X-ray diffraction analysis (XRD) for verification purposes. In directly grown β-Ga 2 O 3 films, the (−201) plane emerged as the primary crystallographic plane, while both the (−201) and (401) planes dominated in β-Ga 2 O 3 films obtained via ε-Ga 2 O 3 film annealing. Raman spectroscopy findings further supported these observations regarding the crystalline phase of the films as observed through XRD analysis. Scanning electron microscopy (SEM) images revealed distinct film morphologies resulting from variations in deposition temperatures. A flatter surface was observed when a higher proportion of ε-Ga 2 O 3 was present in the film, however, regular cracking occurred after annealing. Atomic Force Microscope (AFM) images demonstrated that at a deposition temperature of 800 °C, regular steps were present on the film's surface. Mixed-phase films exhibited hillock morphology that disappeared after annealing, leading to a decrease in the surface roughness in root mean square (RMS) value. By elevating the growth temperature, a significantly enhanced density of gallium oxide nanoribbons can be seamlessly integrated onto the film surface. The transferred nanoribbons exhibit an ultra-thin profile with a minimum thickness of merely 12 nm, rendering them more slender and economically advantageous in comparison to conventional mechanical stripping methods. This study presents a CVD-based approach for growing gallium oxide thin films with varying morphologies by employing temperature modulation and demonstrates an innovative one-step method for growing nanostructures on gallium oxide films in situ, providing valuable insights for future device development involving gallium oxide. [ABSTRACT FROM AUTHOR]

By solvothermal reactions of fluoro substituted biphenyl‐3,3',5,5'‐tetracarboxylic acids (H4BPTC) with the respective metal salts, four new MOFs with the MFM‐300 topology were synthesized, namely [MIII2(OH)2(L)] with MIII=Ga3+, In3+ and L=4‐mF‐BPTC4− and 4,4'‐dF‐BPTC4−. Three of them were refined from X‐ray single crystal diffraction data (I4122, Z=4), [Ga2(OH)2(4,4'‐dF‐BPTC)] was confirmed by Le Bail fits based on synchrotron powder diffraction data. To the best of our knowledge, these four compounds represent the very first examples of MFM‐300 type MOFs with a substituted BPTC4− linker. With increasing fluorination of the linker, the thermal stability decreases, as the decarboxylation of the linker is facilitated. On the other hand, the gas uptake is enhanced significantly. E.g. the CO2 uptake (273 K, 1 bar) increases from 124 cm3/g for [Ga2(OH)2(4‐mF‐BPTC)] to 136 cm3/g for [Ga2(OH)2(4,4'‐dF‐BPTC)]. Surprisingly, the exact determination of specific surface areas (SBET) turned out to be difficult. It is supposed that due to transient open metal sites, complete removal of solvent molecules (DMF, acetone) is not always possible before degradation of the framework starts. [ABSTRACT FROM AUTHOR]

Controlling multidrug-resistant microorganisms (MRM) has a long history with the extensive and inappropriate use of antibiotics. At the cost of these drugs being scarce, new possibilities have to be explored to inhibit the growth of microorganisms. Thus, metallic compounds have shown to be promising as a viable alternative to contain pathogens resistant to conventional antimicrobials. Gallium (Ga3+) can be highlighted, which is an antimicrobial agent capable of disrupting the essential activities of microorganisms, such as metabolism, cellular respiration and DNA synthesis. It was observed that this occurs due to the similar properties between Ga3+ and iron (Fe3+), which is a fundamental ion for the correct functioning of bacterial activities. The mimetic effect performed by Ga3+ prevents iron transporters from distinguishing both ions and results in the substitution of Fe3+ for Ga3+ and in adverse metabolic disturbances in rapidly growing cells. This review focuses on analyzing the development of research involving Ga3+, elucidating the intracellular incorporation of the "Trojan Horse", summarizing the mechanism of interaction between gallium and iron and comparing the most recent and broad-spectrum studies using gallium-based compounds with antimicrobial scope. [ABSTRACT FROM AUTHOR]

Crystal structure, Raman spectra, electrical properties, and photoluminescence of unintentionally doped (UID) and W-doped β-Ga2O3 (W:β-Ga2O3) crystals grown using the optical floating zone technique were investigated. Based on the experimental data, W6+ ions substitute Ga3+ ions mainly in the octahedral lattice site, as revealed by the Raman spectroscopic assessment of W:β-Ga2O3 crystals. The carrier concentration of 0.10 mol. % W:β-Ga2O3 (3.92 × 1018 cm3) is more than forty times that of UID crystal (9.55 × 1016 cm3). In addition, the resistivity and mobility of 0.10 mol. % W: β-Ga2O3 decreased from 0.603 to 0.032 Ω cm and 153.1 to 126 cm−2 V−1 s−1, respectively. The transmittance of W:β-Ga2O3 crystals decreases with increasing W content (0.01, 0.05, and 0.10 mol. %) but remains high in the visible wavelength range. Three distinct emissions are observed in the photoluminescence spectra: two blue emissions and a UV band emission. These bands are owing to the −1 charge states of Ga(I) vacancies (VGa1−) at the octahedral site, the −1 charge states of gallium and oxygen vacancy pairs (VGa + VO)1−, as well as the recombination of self-trapped holes (STHs) are confined between two O(II)-s sites, respectively. [ABSTRACT FROM AUTHOR]

Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (Ga2O3) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, Ga2O3 material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap. These future commercial applications put forward an urgent require for high-quality epitaxial Ga2O3 material in an efficient growth method at a lower cost. Although there are some conventional methods for single crystal Ga2O3 film epitaxial growth such as MBE and MOCVD, these methods always need a vacuum growth environment and expensive equipment. As a fast-growing method, Mist-CVD gives the growth of Ga2O3 in a vacuum-free, process-simple, and low-cost method, which will greatly reduce the cost and facilitate the development of Ga2O3. This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga2O3, recent progress in the Ga2O3 film epitaxial growth, and various device properties based on the Mist-CVD method. Our work aims to provide help for the development of Ga2O3 material growth and device applications. [ABSTRACT FROM AUTHOR]

Acidic amino acid peptides have a high affinity for bone. Previously, we demonstrated that radiogallium complex-conjugated oligo-acidic amino acids possess promising properties as bone-seeking radiopharmaceuticals. Here, to elucidate the effect of stereoisomers of Glu in Glu-containing peptides [(Glu)14] on their accumulation in the kidney, the biodistributions of [67Ga]Ga-N,N′-bis-[2-hydroxy-5-(carboxyethyl)benzyl]ethylenediamine-N,N′-diacetic acid-conjugated (l-Glu)14 ([67Ga]Ga-HBED-CC-(l-Glu)14), [67Ga]Ga-HBED-CC-(d-Glu)14, [67Ga]Ga-HBED-CC-(dl-Glu)14, and [67Ga]Ga-HBED-CC-(d-Glu-l-Glu)7 were compared. Although the accumulation of these compounds in the bone was comparable, their kidney accumulation and retention were strikingly different, with [67Ga]Ga-HBED-CC-(d-Glu-l-Glu)7 exhibiting the lowest level of kidney accumulation among these compounds. Repeated d- and l-peptides may be a useful method for reducing renal accumulation in some cases. [ABSTRACT FROM AUTHOR]

Additive manufacturing is gaining wide acceptance in the manufacturing industries, but the joining of additively manufactured components is a rarely researched area. In this study, diffusion bonding of directed energy-deposited (DED) Mg alloy (AZ31), using an electric arc as an energy source was analyzed. Diffusion bonding (DB) was performed in a non-vacuum condition with gallium treatment at the faying surfaces to eliminate the oxide formation and promote metallurgical contact. Microstructural and elemental distribution analyses of additively manufactured AZ31 alloy and diffusion-bonded joints were carried out using FESEM and EPMA. EBSD analysis indicated that the bonding interface is characterized by discontinuous dynamic recrystallized grains featured by grain boundary bulging and grain boundary migration. The 90° triple junction observed at the interface migrates to reduce the grain boundary energy. The fine precipitates of β-Mg17Al12 were distributed uniformly throughout the material, which enhanced precipitation hardening. High integrity joints without any voids could be obtained by diffusion bonding and the joint line was not discernible. The high-intensity elemental content at the joint interface highlights the enhanced interdiffusion of constituent atoms across the faying surfaces. [ABSTRACT FROM AUTHOR]

Magnesium alloys are considered as promising materials for use as biodegradable implants due to their biocompatibility and similarity to human bone properties. However, their high corrosion rate in bodily fluids limits their use. To address this issue, amorphization can be used to inhibit microgalvanic corrosion and increase corrosion resistance. The Mg-Zn-Ga metallic glass system was investigated in this study, which shows potential for improving the corrosion resistance of magnesium alloys for biodegradable implants. According to clinical tests, it has been demonstrated that Ga ions are effective in the regeneration of bone tissue. The microstructure, phase composition, and phase transition temperatures of sixteen Mg-Zn-Ga alloys were analyzed. In addition, a liquidus projection of the Mg-Zn-Ga system was constructed and validated through the thermodynamic calculations based on the CALPHAD-type database. Furthermore, amorphous ribbons were prepared by rapid solidification of the melt for prospective alloys. XRD and DSC analysis indicate that the alloys with the most potential possess an amorphous structure. The ribbons exhibit an ultimate tensile strength of up to 524 MPa and a low corrosion rate of 0.1–0.3 mm/year in Hanks' solution. Therefore, it appears that Mg-Zn-Ga metallic glass alloys could be suitable for biodegradable applications. [ABSTRACT FROM AUTHOR]

Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O3 films. In this work, we fabricated amorphous Ga2O3 (a-Ga2O3) metal–semiconductor–metal photodetectors through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement in the responsivity is attained by regulating the capacitance-coupled plasma power during the deposition of a-Ga2O3. The proposed plasma energy generated by capacitive coupled plasma (CCP) effectively improved the disorder of amorphous Ga2O3 films. The results of X-ray photoelectron spectroscopy (XPS) and current-voltage tests demonstrate that the additional plasma introduced during the sputtering effectively adjust the concentration of oxygen vacancy effectively, exhibiting a trade-off effect on the performance of a-Ga2O3 photodetectors. The best overall performance of a-Ga2O3 photodetectors exhibits a high responsivity of 30.59 A/W, a low dark current of 4.18 × 10−11, and a decay time of 0.12 s. Our results demonstrate that the introduction of capacitive coupled plasma during deposition could be a potential approach for modifying the performance of photodetectors. [ABSTRACT FROM AUTHOR]

As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies. [ABSTRACT FROM AUTHOR]

Gallium fluoride phosphate glasses feature low refractive index, high energy radiation resistance, wide transmission range, and favorable emission characteristics of rare‐earth dopants. For the development of optimized glass compositions, a fundamental understanding of these properties in terms of glass structure is sought. We report nuclear magnetic resonance (NMR) structural studies of glasses in the system xGa(PO3)3–(40 − x)GaF3–20BaF2–20ZnF2–20SrF2 (x = 5, 10, 15, 20, and 25 mol%). 31P NMR results with 71Ga recoupling show that the network structure is dominated by P–O–Ga linkages, and no P–O–P linkages exist. 71Ga NMR results show that Ga is mainly six‐coordinated featuring a mixed fluoride/phosphate coordination. Quantitative estimates of this ligand distribution around gallium were obtained by 71Ga{31P} spin echo double resonance (REDOR) measurements. Photophysical properties suggest changes in the Eu(III) ligand distribution toward a fluoride‐dominated environment at low P/F ratio while the glass network is largely sustained by bridging oxygen atoms via P–O–Ga linkages. [ABSTRACT FROM AUTHOR]

Despite the significant recent advances in manufacturing materials supporting advanced dental therapies, peri‐implantitis still represents a severe complication in dental implantology. Herein, a sol–gel process is proposed to easily deposit antibacterial zirconia coatings onto bulk zirconia, material, which is becoming very popular for the manufacturing of abutments. The coatings' physicochemical properties were analyzed through x‐ray diffraction and scanning electron microscopy‐energy‐dispersive x‐ray spectroscopy investigations, while their stability and wettability were assessed by microscratch testing and static contact angle measurements. Uniform gallium‐doped tetragonal zirconia coatings were obtained, featuring optimal mechanical stability and a hydrophilic behavior. The biological investigations pointed out that gallium‐doped zirconia coatings: (i) displayed full cytocompatibility toward human gingival fibroblasts; (ii) exhibited significant antimicrobial activity against the Aggregatibacter actinomycetemcomitans pathogen; (iii) were able to preserve the commensal Streptococcus salivarius. Furthermore, the proteomic analyses revealed that the presence of Ga did not impair the normal oral microbiota. Still, interestingly, it decreased by 17% the presence of Fusobacterium nucleatum, a gram‐negative, strictly anaerobic bacteria that is naturally present in the gastrointestinal tract. Therefore, this work can provide a valuable starting point for the development of coatings aimed at easily improving zirconia dental implants' performance. [ABSTRACT FROM AUTHOR]

Metals play vital roles in biological systems, with iron/heme being essential for cellular and metabolic functions necessary for survival and/or virulence in many bacterial pathogens. Given the rise of bacterial resistance to current antibiotics, there is an urgent need for the development of non-toxic and novel antibiotics that do not contribute to resistance to other antibiotics. Gallium, which mimics iron, has emerged as a promising antimicrobial agent, offering a novel approach to combat bacterial infections. Gallium does not have any known functions in biological systems. Gallium exerts its effects primarily by replacing iron in redox enzymes, effectively inhibiting bacterial growth by targeting multiple iron/heme-dependent biological processes and suppressing the development of drug resistance. The aim of this review is to highlight recent findings on the mechanisms of action of gallium and provide further insights into the development of gallium-based compounds. Understanding the mechanisms underlying gallium’s biological activities is crucial for designing drugs that enhance their therapeutic therapies while minimizing side effects, offering promising avenues for the treatment of infectious diseases.

Gallium ions have a special action mechanism that interferes bacterial iron metabolism, thereby possessing great potential for the treatment of bacterial infections. In this work, gallium ions‐cross‐linked konjac glucomannan/polyacrylamide (KGM/PAM/Ga3+) hydrogels are successfully constructed with satisfactory swelling ability, appropriate mechanical properties and adjustable degradation performance. Ga ions as a kind of cross‐linking agent can enhance the stability, and more importantly, improve the bactericidal ability of hydrogel, thus forming novel functional KGM/PAM/Ga3+ hydrogels for treating wounds. After the evaluation of antibacterial activity and biocompatibility, KGM/PAM/Ga3+ hydrogels can effectively inhibit the proliferation of bacteria through the gradual and sustainable release of Ga ions from the hydrogel with negligible cytotoxicity and good blood compatibility. Furthermore, they possess exceptional self‐healing behavior, and can be readily adapted to varying degrees of bending, which matches skin wound dressing application. Finally, the results of wound healing performance and histological evaluation demonstrate that KGM/PAM/Ga3+ hydrogels can efficiently accelerate infected wound healing and facilitate the regeneration of skin tissues. [ABSTRACT FROM AUTHOR]

The transverse thermoelectric effect based on the anomalous Nernst effect (ANE) has attracted attention, especially for thermoelectric and spintronic applications. Fe 3 X (X = Ga, Al) is known to exhibit a large ANE at room temperature owing to the topological electronic band structure so-called nodal web. Here, we systematically investigate ANE in the polycrystalline Fe3Ga1−xAlx and Fe3Al1−xSix. Despite significant chemical substitutions, a very robust feature of the large ANE − S y x ∼ 5.7 μ V/K is found for Fe3Ga1−xAlx (0 ≲ x ≲ 0.6), exhibiting a striking x independent nodal web contribution. Since aluminum is more low-cost and abundant than gallium, our results indicate Fe3Ga1−xAlx (x ∼ 0.6) should be suitable for large-scale thermoelectric applications. [ABSTRACT FROM AUTHOR]

The effective recovery of gallium from wastewater discharge in the Bayer process is promising for the long-term development of gallium resources. The adsorption and desorption behavior of gallium (Ga), vanadium (V), and aluminum (Al) ions on a strong acidic styrene cation exchange resin (JK resin) from a simulated Bayer solution was systematically investigated by static experiments. The results showed that the optimum conditions for separating Ga from V and Al were at low temperatures and short contact times, with 78.30%, 15.16%, and 6.63% of the adsorption efficiency at 25 °C and 60 min, respectively, for Ga, V, and Al. The adsorption kinetics of Ga3+ conformed to the pseudo-second order model, and the static saturation adsorption capacity was 18.25 mg/g. The Langmuir model fitted the adsorption isotherm of gallium well, and the maximum adsorption capacity was 1.11 mg/g at 25 °C. FT-IR spectroscopy and XPS showed that the mechanism of the Ga3+ adsorption was only related to the interaction of the oxygen atoms of the amide oxime group (C=NOH). The separation of Ga, V, and Al can be achieved by desorbing 98% of Al with low concentrations of ammonia and 90% of Ga with low concentrations of hydrochloric acid. The results indicate that JK resin is an efficient adsorbent for separating gallium and vanadium in alkaline solutions. [ABSTRACT FROM AUTHOR]

A novel graphene-based composite, 5-methyl-1,3,4-thiadiazol-2-amine (MTA) covalently functionalized graphene oxide (GO-MTA), was rationally developed and used for the selective sorption of Ga3+ from aqueous solutions, showing a higher adsorption capacity (48.20 mg g−1) toward Ga3+ than In3+ (15.41 mg g−1) and Sc3+ (~0 mg g−1). The adsorption experiment's parameters, such as the contact time, temperature, initial Ga3+ concentration, solution pH, and desorption solvent, were investigated. Under optimized conditions, the GO-MTA composite displayed the highest adsorption capacity of 55.6 mg g−1 toward Ga3+. Moreover, a possible adsorption mechanism was proposed using various characterization methods, including scanning electron microscopy (SEM) equipped with X-ray energy-dispersive spectroscopy (EDS), elemental mapping analysis, Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Ga3+ adsorption with the GO-MTA composite could be better described by the linear pseudo-second-order kinetic model (R2 = 0.962), suggesting that the rate-limiting step may be chemical sorption or chemisorption through the sharing or exchange of electrons between the adsorbent and the adsorbate. Importantly, the calculated qe value (55.066 mg g−1) is closer to the experimental result (55.60 mg g−1). The well-fitted linear Langmuir isothermal model (R2 = 0.972~0.997) confirmed that an interfacial monolayer and cooperative adsorption occur on a heterogeneous surface. The results showed that the GO-MTA composite might be a potential adsorbent for the enrichment and/or separation of Ga3+ at low or ultra-low concentrations in aqueous solutions. [ABSTRACT FROM AUTHOR]

Liquid metal alloys can accumulate specific solute metal atoms on their surface, creating distinct quasi‐ordered atomic layers. Such atomic layers can be tuned by varying the alloy composition to form catalytic interfaces suited for multi‐step reactions. Here, the surface enrichment in gallium‐indium alloys is studied and utilized for carbon dioxide (CO2) electrochemical reduction. The results show that adding a small amount of indium (16.8 at%) to gallium leads to a significant indium enrichment of >83 at% on the topmost layer of the alloy. This enrichment dictates the CO2 conversion pathway, leading to 98% faradaic efficiency toward formate at −1.90 V vs reversible hydrogen electrode (RHE). This study produces unprecedented insights into key interfacial processes and lays the foundation for significant further work within the areas of catalysis and liquid metals. [ABSTRACT FROM AUTHOR]

The study investigates the potential of technology-critical elements (TCEs) in the bottom sediments of the Biała Przemsza River as indicators of anthropogenic activities. The mass fractions of TCEs: Ge, Ga, In, Tl, Sb and Te (and other elements) in the sediment were analysed by inductively coupled plasma mass spectrometry with the maximum mass fractions: 2.46, 25.6, 0.528, 27.7, 12.5 and 0.293 mg/kg, respectively. Distribution and identification of TCE sources were supported by statistical analysis (principal component analysis coupled with varimax rotation and hierarchical cluster analysis). Assessments of TCE contamination using the geoaccumulation index, pollution index, contamination factor, enrichment factor and the antimony-to-arsenic ratio highlighted the high contamination of bottom sediments by Sb, Ga, Tl, Cd, As, Zn, Pb and moderate contamination by Co, In and V. Distinct behaviour patterns were observed among TCEs, revealing Sb and Tl as potential indicators of Zn-Pb ore mining activities. Co, V, Ge and, to a lesser extent, Te emerged as promising indicators of coal and coal fly ash effluents. Sequential chemical extraction of TCEs showed that Sb, In and Tl had the highest mobility from sediments. The Risk Assessment Code calculations suggest, that in the Biała Przemsza River bottom sediments, there is an average risk of contamination by As, Tl and Mn. Soluble forms of Tl, Ge, Sb, Te and In were identified in descending order, indicating their bioavailability. [ABSTRACT FROM AUTHOR]