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Background Carotid plaque ulceration has been associated with imaging characteristics of high risk of future events (plaque vulnerability) in patients with a significant degree of stenosis, while little is known about its role in patients with a lesser degree of stenosis and its association with markers of vascular inflammation. Purpose We evaluated the association between imaging characteristics of plaque vulnerability and vascular inflammation detected by different imaging tests. Methods One hundred and seven patients with unilateral asymptomatic carotid artery stenosis (40–60% detected by Doppler ultrasound (DUS)), enrolled in the ongoing Carotid Artery Multimodality Prognostic (CAMP) study were prospectively evaluated with computed tomography angiography (CTA), contrast-enhanced magnetic resonance imaging (CEMRA) and, in a subgroup of patients, with 18-F-fluorodeoxyglucose positron emission tomography (PET). Plaque ulceration was detected by CTA. Variables are expressed as median (1st–3rd quartiles) and number (percentages).The Student's t-test or Mann-Whitney and Chi square or Fisher's exact test were used to study associations among variables. Results An ulcerated plaque was present in 35% patients (n=33) of those undergoing CTA (n=94), while intraplaque hemorrhage and lipid-rich necrotic core were present in 9% and 15% of those undergoing CEMRA. Compared with patients with non-ulcerated plaques, those with an ulcerated plaque had a significant higher degree of stenosis at DUS, a higher target to background ratio (TBR) at 18F-FDG-PET and a higher high-sensitivity cardiac troponin (cTn) T. Conclusions Plaque ulceration is common and associated with higher degree of stenosis, higher indices of wall inflammation and higher serum markers of myocardial injury. Funding Acknowledgement Type of funding sources: Public grant(s) – National budget only. Main funding source(s): Regione Toscana

Introduction Dual antiplatelet therapy (DAPT) with aspirin and a P2Y12 receptor inhibitor for at least 1 month is the mainstay of therapy after an acute coronary syndrome (ACS). Despite several randomized controlled trials (RCTs) having compared different DAPT regimens after an ACS, the choice of the optimal P2Y12 receptor inhibitor is still debated. Purpose We aimed to compare the efficacy and safety profiles of the new P2Y12 receptor inhibitors (prasugrel and ticagrelor) versus clopidogrel in patients with ACS through a meta-analysis of RCTs. Methods We performed an extensive literature search, from January 1970 to December 2021 using PubMed database. Studies were eligible if they were RCTs directly comparing different oral P2Y12 receptor inhibitors in patients with ACS. Data on study methods, patient characteristics, and outcomes of interest (all-cause and cardiovascular death, recurrent myocardial infarction, stroke, major and non-major bleeding) were extracted from the original publications. We performed a meta-analysis using a random-effects model with the Mantel–Haenszel method. The effect measures of each study included were calculated and reported as odds ratio (OR) with 95% confidence interval (CI), visually presented in forest plots. A two-sided p-value Results A total of 117 studies were available for the analysis; after full reading 11 studies were eligible to be analyzed. The 11 studies reported data on 50,722 patients: 25,424 [50.1%] taking a new oral P2Y12 receptor inhibitor and 25,298 [49.9%] taking clopidogrel. Patients receiving ticagrelor or prasugrel showed a lower risk of all-cause mortality (OR 0.88, 95% confidence interval [CI] 0.80–0.97, I2=8%), cardiovascular mortality (OR 0.88, 95% CI 0.81–0.95, I2=0%), and recurrent myocardial infarction (OR 0.86, 95% CI 0.76–0.97, I2=43%) compared to those receiving clopidogrel. The two groups did not differ significantly concerning the risk of stroke (OR 0.98, 95% CI 0.82–1.17, I2=0%), major bleeding (OR 1.05, 95% CI 0.97–1.15, I2=0%), or non-major bleeding (OR 1.36, 95% CI 0.85–2.20, I2=67%). By restricting the analysis to the studies comparing ticagrelor versus clopidogrel, the ticagrelor group showed a lower risk of all-cause mortality (OR 0.79, 95% CI 0.70–0.90, I2=0%), but a higher risk of non-major bleeding (OR 1.67, 95% CI 1.05–2.66, I2=30%). There was no significant difference between ticagrelor and clopidogrel in terms of cardiovascular death (OR 0.87, 95% CI 0.73–1.05, I2=0%), stroke (OR 1.06, 95% CI 0.85–1.13, I2=0%), or major bleeding (OR 1.02, 95% CI 0.93–1.12, I2=0%). Conclusions In patients with an ACS, a DAPT strategy with aspirin plus either prasugrel or ticagrelor is associated with a reduced risk of all-cause and cardiovascular mortality as well as of recurrent myocardial infarction compared to aspirin plus clopidogrel, without an increased risk of bleeding. Funding Acknowledgement Type of funding sources: None.

Funding Acknowledgements Type of funding sources: None. Background Iron deficiency anemia (IDA) after cardiac surgery (CS) increases mortality, serious adverse events and length of stay. Aim of the study was to compare the efficacy of Sucrosomal Iron (SI) on IDA and hematinic deficiencies (HD) in patients (P) after CS, compared to i.v. Ferric Carboxymaltose (FCM). SI was chosen for its peculiar intestinal absorption properties such as to overcome the hepcidin's block. Methods 106 consecutive anemic P were tested for HD after the admission in Cardiac Rehabilitation and alternately treated with SI (56) or FCM (54). The study design included a single dose of 1000 mg of FCM at T1 (8-10 days CS) or a dose of 120 mg of SI per day from T1 to T2 (on the day of discharge 10 days after T1); since then the SI was reduced to 30 mg per day until T3 (follow-up, 10 days after T2). Measures of efficacy included changes from baseline in Hb, HD, natriuretic peptides (NP), C-reactive protein (CRP), and the 6-minute-walking-test (6MWT). Results The data are shown in the Table. At T1, two treatment groups did not show statistically significant differences. Hb increased significantly (p Conclusions SI and FCM show similar efficacy on HD, starting from Hb, in P with IDA, after CS. The quick response to treatment, comparable between SI and FCM, could support the choice of oral iron, with organizational and cost benefits. In addition, was shown a positive impact on functional capacity, assessed with the 6MWT, for the first time similar between an oral and i.v. iron. Inflammation was reduced, but only SI is able to recover Hb levels, avoiding the risk of hyperferritinemia.

BACKGROUND: Raltegravir and maraviroc represent new, important resources for HIV-infected patients with intolerance or resistance to other antiretroviral agents. The safety and efficacy of both drugs have been investigated, but there is no information on possible pharmacokinetic interactions between these 2 drugs in clinical practice. OBJECTIVE: To evaluate raltegravir plasma concentrations in heavily treatment-experienced patients receiving salvage regimens and explore, in a preliminary assessment, the potential influence of maraviroc coadministration and other cofactors on raltegravir trough concentrations (Ctrough). METHODS: Fifty-four HIV-infected patients with triple class (nucleoside reverse transcriptase inhibitor, nonnucleoside reverse transcriptase inhibitor, protease inhibitor) treatment experience starting raltegravir 400 mg twice daily, with (n = 11) or without (n = 43) concomitant maraviroc 300 mg twice daily, were evaluated. All regimens included at least 3 drugs of at least 2 different classes. Raltegravir plasma Ctrough, after at least 1 month of treatment, were analyzed to compare groups of patients taking raltegravir only and raltegravir plus maraviroc. Immunovirological (CD4, HIV-RNA) and clinical data after 6 months of treatment were also collected and described. RESULTS: Raltegravir plasma Ctrough showed a large variability (range 0.02 μg/mL) raltegravir concentrations were observed in all patients receiving raltegravir + maraviroc and in 74% of patients receiving raltegravir alone (p = 0.060). After 6 months of treatment, the 2 groups had similar clinical, virologic, and immunologic conditions. CONCLUSIONS: Coadministration of maraviroc does not seem to have any relevant effects on raltegravir plasma Ctrough in heavily treatment-experienced patients receiving salvage regimens. Further studies should evaluate the potential additional benefits of maraviroc coadministration in terms of virologic and immunologic response.

In this contribution the CMOS photonics technology developed and commercialized by Luxtera (LuxG) is reviewed with particular emphasis on the Ge integrated photodiodes. The advantages of integration and usage of standard CMOS foundry toolset/processes/practices are discussed with details of the newest 14Gbps (FDR) and 25Gbps (EDR) transceiver chips.

The fabrication and characterization of near infrared photodetectors integrated on silicon substrates are reported on where the active layer is a thermally evaporated polycrystalline germanium. Recent results are presented in the effort to enhance the optoelectronic properties of the poly-Ge film in terms of uniformity for multiple device integration, speed and responsivity. In particular we demonstrate a 16 pixel linear array, a speed of photoresponse of about 650 ps and an enhancement of responsivity by a factor of four. The fabrication process, including substrate cleaning and preparation, requires temperatures lower than 300 degrees C being fully compatible with silicon technology. (C) 2000 Elsevier Science S.A. All rights reserved.

We introduce a novel method for the wavelength stabilization of semiconductor lasers for telecommunications. The approach is based on a wavelength-sensitive photodetector which, in a feedback system, generates an error signal apt to tune the source to the desired value. We extensively investigate the influence of various design parameters on performance figures such as tunability, steady-state error, and temperature dependence, as well as fabrication tolerances. The results are compared with standard specifications for wavelength-division-multiplexed optical communications with various channel spacings.

The aim of this work is to investigate by means of a 2-D and 3-D FLUENT© based numerical model the behaviour of a transferred arc plasma torch recently developed within Cebora S.p.A. for the cutting of a metallic substrate material. Flow and heat transfer equations are solved with coupled electromagnetic ones, for LTE optically thin plasma, while turbulence phenomena are taken into account by means of a k-epsilon realizable model. Simulations include a prediction of the thermal behaviour of the hafnium insert of the cathode and trajectories of hafnium oxide particles emitted from it and the efficiency of nozzle cooling systems in various operating conditions including gas mixtures (O2/Air, H35/N2, Air/Air) fitted for various dimension and type of the cutting material. Results obtained from the simulations are compared with experimental measurements in order to perform a validation of the model in terms of pressure in different regions of the device, gas mass flow rate and nozzle temperature during the processing phase. For this purpose a modified plasma torch has been designed and used with realistic cutting conditions.

Fluorescent lamps glass powders are sieved in two particle size ranges and are subjected to thermal plasma in-flight treatment by injection into the discharge of a Tekna PL-35 plasma torch and reaction chamber as part of a source operated at 3MHz with a maximum power of 25kW, with Ar as plasma and carrier gas and N2 as sheath gas. The sieved powders and the plasma treated ones have been characterized by powder XRD and particle size analysis in order to verify if the plasma treatment can induce modification in the mineralogical and physical characteristics. The spherical shape of the particles have been analyzed by scanning electron microscopy. Moreover, this technique has allowed to verify if the plasma treatment can induce modification of the (qualitative) chemical composition of the powder. Results for various operating conditions and injection probe positions are presented. The spherical powders have been then introduced in thermoplastic polymer (polypropylene) in place of glass spheres usually used, and the results are compared to each others. The samples are characterized by mechanical tests (flexural strength) and microstructural analysis (SEM) in order to verify the differences in materials properties obtainable by mean of conventional and plasma assisted processes.

The aim of this work is to investigate by means of a 2-D and 3-D FLUENT© based numerical model the behaviour of a transferred arc plasma torch recently developed within Cebora S.p.A. for the cutting of a metallic substrate material. Flow and heat transfer equations are solved with coupled electromagnetic ones, for LTE optically thin plasma, while turbulence phenomena are taken into account by means of a k-e Realizable model. Simulations include a prediction of the thermal behaviour of the hafnium insert of the cathode and trajectories of hafnium oxide particles emitted from it and the efficiency of nozzle cooling systems in various operating conditions including gas mixtures (O2/Air, H35/N2, Air/Air) fit for various dimension and type of the cutting material. Results obtained from the simulations are compared with experimental measurements in order to perform a validation of the model for what concerns pressure values in different regions of the device, gas mass flow rate and nozzle temperature during the working phase. For this purpose two a modified plasma torch has been designed and used during realistic cutting conditions.

A photodetector structure includes a silicon-based waveguide in which optical signals to be detected travel in a given direction and are confined therein and a germanium layer disposed in contact with a portion of the silicon-based waveguide so that an evanescent tail of the propagating optical signal in the waveguide is coupled into the germanium layer. In addition, the germanium layer includes a mesa having a length along the signal propagating direction and a width in a direction substantially perpendicular to the propagating direction, in which the width of said mesa is smaller than its length. The photodetector also comprises a first and a second metal contacts, the first metallic contact being located on the germanium layer, the said second metallic contact being located on the silicon-based waveguide, the first and second contacts being used to collect electrons generated by light absorption to obtain an output electric signal.

We report an extensive analysis of amorphous silicon bulk-barrier phototransistors. Starting from a new analytical model for the device, we take into account the peculiarity of the material and, in particular, of the p-doped base, which we find to critically affect device operation. We demonstrate the possibility of obtaining lightly p-doped material suitable for high-gain devices, and we use the equilibrium model of defects in amorphous silicon as a guideline for our work. Finally, measurements on a number of high-gain devices verify our theoretical predictions.

A new measurement technique, acoustoelectric deep-level transient spectroscopy (AE-DLTS) is used to characterize the GaAs epilayer film grown on a semi-insulating GaAs substrate. The electric field, generated by the propagation of a surface acoustic wave (SAW) on a piezoelectric crystal, is used as a probing tool to study the transient behaviour of deep levels. This field interacts with the free carriers present in the semiconductor, resulting in an alteration of the carrier density at the surface of the semiconductor and the generation of a DC voltage. The rate at which excess charges are induced at the semiconductor surface, or diminished after the passage of the SAW pulse, is related to the position and the cross section of the deep levels at the interface between the epilayer and the substrate. The theoretical analysis of the fall time of the DC voltage is presented along with experimental verification. In our experiments the voltage transients were recorded as a function of incident photon energy and at different temperatures, and the thermal and optical cross sections of the EL2 level in GaAs were evaluated from computer fit.

Electronic properties of n-SnO2/i-Si1−xCx:H/Au MIM-type devices (with x = 0.5–0.75) have been investigated by means of current-voltage measurements in dark conditions and under illumination. Richardson-Schottky emission is demonstrated to be the main injection mechanism. The large current increase observed under illumination is related to a barrier-lowering effect due to the accumulation of photogenerated holes at the n-SnO2/i-SiC:H interface, and a simple model is presented which is able to explain the experimental data. At high voltages, current injection is dominated by a bulk emission process, which cancels any photoeffect.

We report on a novel solid-state spectrum analyzer in the near infrared. The device is an array of six photodetectors based on polycrystalline germanium film evaporated on a silicon substrate and each element is a wavelength-selective detector. We describe the fabrication and characterization of such device and we demonstrate its capability both as a wavelengthmeter for quasi-monochromatic light beams and as a spectrum analyzer. (C) 2001 Elsevier Science Ltd. All rights reserved.

The complete process of design realization and characterization of mesa insulated a-Si bulk barrier phototransistors is reported. Device design is performed with the aid of a finite element numerical simulator. Results from a set of phototransistors grown with different base doping level are reported.

We demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved.

To prepare a dense, defect-free deposit of refractory metals relies not only on the droplets’ state, their temperature and velocity prior to impact on the surface of substrate and/or the precedent deposited layer, but also on the surface temperature of the substrate, whereupon the droplets impact. This paper presents a comprehensive investigation, in which the particles temperature, velocity, and the substrate temperature are studied all-in-one step to understand their influence on the deposit quality. The experimental results make our knowledge of the induction plasma spray of refractory metals process more integrated. Based on our estimation on the effect of all of the three factors, a set of optimized process parameters was established and proved by applying it in producing stationary deposits and coating layers. The results obtained distinguish the induction plasma spray a unique technique, which is ideal to be utilized in refractory metals deposit.

We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 times 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera

Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 mu m we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/s. (C) 2005 American Institute of Physics.

In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 degrees C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented. (c) 2004 Elsevier B.V. All rights reserved.

In this paper we review the recent achievements of germanium on silicon technologies for the fabrication of near infrared photodetectors.

A new method to extract information about the spatial distribution of the density of defect states in the intrinsic layer of an amorphous silicon solar cell from capacitance measurements is presented. Forward bias capacitance measurements are shown to be strongly sensitive to the spatial distribution of defects in the i-layer of the p-i-n device, and thus they are suitable to be used as a powerful tool to detect the presence and the extension of nonuniformity, for example, the damaged zone near the doped layer. In this work, the authors develop a fit algorithm to extract the DOS (density of states) distribution from capacitance measurements. They use the 'double carrier model', which is an analytical description of both majority and minority carrier distributions in the p-i-n structure, together with SHR theory on trapping to develop the model of the capacitance. A set of capacitance measurements performed at different forward bias, frequency and temperature is taken in order to minimize measurement error. DOS is obtained by a simplex optimization procedure. Preliminary results of the fitting algorithm are presented. >

It is shown that discrete relaxation can be used to provide a technical document with a consistent labeling. It can reduce the number of hypotheses associated with each graphical primitive of a drawing by exhibiting a locally consistent labeling of these primitives. The tools considered have been tested on cadastral city maps, and the results are discussed. >

The performed study is an up-link carrier to interference (C/I) performance evaluation of narrow multibeam and wide sector-beam node antennas in a PMP system. It is shown that the introduction of three-beam node antennas improves up-link C/I with 5 dB compared with wide-beam sector antenna. The replacement of wide-beam antennas can be made on a sector by sector basis. Simulations have shown that it is possible to get significant interference improvement in a 5/spl times/3 hub network by replacing 20% of the wide-beam antennas with multi-beam antennas.

Two families of chiral selectors derived from deoxycholic acid, possessing both an arylamide and an arylcarbamate group on the cholestanic backbone were synthesized and covalently bonded to silica gel to afford new chiral stationary phases (CSPs A1 – D1 and A2 – D2 ) for the HPLC resolution of racemic compounds. The chromatographic data concerning the resolution of selected racemic compounds on CSPs A1 – D1 and A2 – D2 were compared with those obtained using analogous CSPs possessing only arylcarbamate groups on the cholestanic system (CSPs A – D ). This has allowed us to establish that the resolution capability of CSPs A1 – D1 and A2 – D2 depends not only on the position of the arylamide group on the cholestanic backbone, but also on the electronic characteristics of the aromatic substituents.

Polycrystalline germanium thermally evaporated on silicon has been demonstrated as a feasible way to the integration of fast near-infrared photodetectors and functional devices on silicon. However, the use of such devices is currently limited to applications which do not depend critically on responsivity. Several attempts are under investigation to overcome the problem: one of the most promising is the integration of a poly-Ge photodetector with a waveguiding structure. This approach allows the distributed absorption of the incoming light in the thin sensitive layer of the poly-Ge/Si heterojunction, thus increasing the effective absorption length and efficiency. (C) 2001 Elsevier Science B.V. All rights reserved.

We report on the state of the art of near infrared photodetectors based on germanium on silicon. After a brief review on material and devices, we describe our approach to the fabrication of fast Ge/Si p-i-n detectors based on a simple process with reduced thermal budget for compatibility with standard silicon technology. The diodes, fabricated by chemical vapor deposition at 600°C, exhibit responsivities of 0.4 and 0.2A/W at 1.3μm and 1.55μm, respectively, and operation at 10Gbit/s. copyright The Electrochemical Society.

We describe the case of a 54-year-old male who was examined due to light chest pain experienced the previous day. The man was admitted to the cardiology division for the presence of a complete atrioventricular block. On admission the echocardiogram showed a large aortic regurgitation not present two years earlier. Suspecting an aortic dissection we performed a transesophageal echocardiography and a contrast computerized tomography: the two examinations were negative. The next days the patient had two episodes of acute pulmonary edema so he was transferred to the regional reference hospital where an hemodynamic unit and cardiac surgery division were available. There, he repeated a transesophageal echocardiography which was negative. The man had aortic valve replacement without angiography for his very critical condition. The surgeon identified a small aortic dissection, just above the aortic valve plane, which was responsible for valve leaflets prolapse and aortic regurgitation; the hematoma deepened towards the interatrial septum and atrioventricular junction justifying the atrioventricular block. In conclusion, a small aortic dissection can offer an atypical picture, and in this condition even very valuable diagnostic techniques may fail the diagnosis.

not Available.

Electronic properties of C-rich a-Si1 -xCx:H alloys are investigated through the characterization of MIM-type structures, by means of current-voltage measurements carried out at different temperatures. These measurements provide some new insight in both the dielectric behavior of the material and the physics of the metal/a-Si1-xCx:H junction.

It is known that sinus node dysfunctions can, in some instances, be accompanied by paroxysmal supraventricular arrhythmias. It is however not completely understood if, in these patients, it is present a situation of electrical atrial vulnerability or an electrophysiological condition which may represent the substrate for these arrhythmias. With the aim to solve this issue, 23 patients with sinus node dysfunction (8 of whom with atrial tachyarrhythmias) underwent a complete electrophysiological study, according to the protocol of the Italian Group of Cardiac Electrophysiology. The results of the electrophysiologic study allowed to demonstrate that in 75% of patients with atrial tachyarrhythmias it was possible to reproduce the arrhythmia by means of a low aggressive protocol. Also, in these patients, an inter- and intra-atrial conduction disturbance was demonstrated and, with respect to those patients without arrhythmias, the atrial refractory period was shorter in basal conditions and during induced atrial rhythm with cycle length of 600 ms, it was longer in left atrium than in high right atrium, and it shortened to a lesser extent with the shortening of the cardiac cycle.

In order to compare the efficacy of oral lidoflazine (240 mg/die) and oral quinidine (1200 mg/die) in re-establishing sinus rhythm, we studied 115 patients (mean age 63.8 years; range 32-91) with atrial fibrillation of recent onset (less than 3 months). Patients with cardiac failure, acute myocardial infarction, severe intraventricular conduction disturbances, kaliemia less than 3.8 mEq/L or digoxinemia greater than 2 ng/ml were not included. Patients were randomly given one of the 2 drugs, until conversion to sinus rhythm was achieved, severe side effects occurred or for a maximum therapy of 5 days. No significant differences were present between the 2 groups in terms of age, male/female ratio, duration of atrial fibrillation, presence of an enlarged left atrium, presence of organic heart disease (or arterial hypertension) or digitalis therapy. Sinus rhythm resumption was obtained in 41/58 (71%) patients treated with quinidine and in 47/57 (82%) patients treated with lidoflazine (p = ns). In successful cases, the mean treatment time was 79 +/- 33 (SD) hours for quinidine and 66 +/- 36 hours for lidoflazine (p = ns). Both drugs showed the same efficacy in 3 subgroups of patients in whom the arrhythmia had different duration (less than 24 hours; between 24 hours and 3 days; more than 3 days). Treatment was stopped in 5 patients receiving quinidine (gastrointestinal side effects) and in 3 patients receiving lidoflazine (frequent premature ventricular beats in 2 and polymorphic ventricular tachycardia of the "torsade de pointes" type in 1).(ABSTRACT TRUNCATED AT 250 WORDS)

A novel photodetector with wavemeter capability in the near infrared is demonstrated. The device is an InGaAsP/InGaAs double heterostructure operating as two back-to-back photodiodes with different spectral responses. This prototype is able to determine monochromatic-light wavelengths with an accuracy of /spl plusmn/40 pm around 1.55 /spl mu/m and a sensitivity of about 0.14 /spl mu/A/nm.