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目的 探讨异基因造血干细胞移植（allo-HSCT）前巩固化疗对第1次形态学完全缓解且微小残留病阴性（CR1/MRD−）中/高危急性髓系白血病（AML）患者预后的影响。 方法 对2010年1月至2019年3月在CR1/MRD−状态下接受allo-HSCT的155例中/高危AML（不含急性早幼粒细胞白血病）患者进行回顾性分析。 结果 全部155例患者中，102例获得CR1/MRD−后接受移植前巩固化疗（巩固组），53例获得CR1/MRD−后直接行allo-HSCT（非巩固组），两组中位年龄分别为39（18~56）岁、38（19~67）岁。巩固组、非巩固组移植后5年总生存率分别为（59.3±7.5）%、（62.2±6.9）%（P=0.919），无复发生存率分别为（53.0±8.9）%、（61.6±7.0）%（P=0.936），累积复发率分别为（21.9±5.4）%、（18.3±6.0）%（P=0.942），非复发死亡率分别为（22.4±4.3）%、（28.4±6.5）%（P=0.464）。多因素分析显示，移植前是否接受巩固化疗及其疗程（

目的 比较传统Hyper-CVAD/MA方案及借鉴儿童急性淋巴细胞白血病（ALL）的新化疗方案CHALL-01在≤60岁成人Ph阳性ALL（Ph+ ALL）中的临床疗效。 方法 回顾性分析2007年1月至2017年12月第二军医大学附属长海医院及长征医院收治的158例Ph+ ALL患者（除外慢性髓性白血病急变期患者），其中Hyper-CVAD/MA组63例，CHALL-01组95例，诱导及巩固化疗期间联合酪氨酸激酶抑制剂（TKI）治疗，有合适供者的患者进行造血干细胞移植，并用TKI进行维持治疗。 结果 经过1~2个疗程的诱导治疗，91.1%（144/158）患者获得完全缓解（CR），其中Hyper-CVAD/MA组CR率为90.5%（57/63），CHALL-01组CR率为91.6%（87/95），两组间差异无统计学意义（χ2=0.057，P=0.811）。随访截止于2018年6月，共134例CR患者可进一步分析，其中Hyper-CVAD/MA组53例，CHALL-01组81例。CHALL-01组达到分子学缓解的比例显著高于Hyper-CVAD/MA组（完全分子学反应率：44.4%对22.6%，主要分子学反应率：9.9%对18.9%）（χ2=7.216，P=0.027）。Hyper-CVAD/MA组和CHALL-01组4年总生存率分别为44.81%（95%CI 30.80%~57.86%）和55.63%（95%CI 39.07%~69.36%）（P=0.037），4年无病生存率分别为37.95%（95%CI 24.87%~50.93%）和49.06%（95%CI 34.24%~62.29%）（P=0.015）。两组在4年累积复发率（P=0.328）及无复发死亡率（P=0.138）上差异无统计学意义。CHALL-01组肺部感染发生率较Hyper-CVAD/MA组明显减低（43.4%对67.9%，χ2=7.908，P=0.005）。 结论 CHALL-01方案治疗成人Ph+ ALL疗效优于Hyper-CVAD/MA方案，肺部感染发生率低，分子学缓解率高，可以提高Ph+ ALL患者的生存率。

3.0T superconducting magnetic resonance imaging (MRI) system has become the mainstream of modern clinical MRI system because of its high field intensity and high degree of uniformity and stability. It has broad prospects in scientific research and other fields. We analyze the principle of magnet designing in this paper. We also perform the magnetic field simulation and shimming analysis of the first 3.0T/850 superconducting MRI system in the world using the Ansoft Maxwell simulation software. We guide the production and optimization of the prototype based on the results of simulation analysis. Thus the magnetic field strength, magnetic field uniformity and magnetic field stability of the prototype is guided to achieve the expected target.

We report a resistive switching memory structure based on silicon wafers by employing both materials and processing fully compatible with complementary metal-oxide semiconductor technology. A SiOx nanolayer was fabricated by direct plasma-oxidation of silicon wafers at room-temperature. Resistive switching behaviors were investigated on both p- and n-Si wafers, whereas self-rectifying effect was obtained in the Cu/SiOx/n-Si structure at low-resistance state. The self-rectifying effect was explained by formation of the Schottky barrier between the as-formed Cu filament and the n-Si. These results suggest a convenient and cost-efficient technical-route to develop high-density resistive switching memory for nowadays Si-based semiconductor industry.

Doping into LiNbO3 (LN) and studying its magnetism might provide an alternative way for fabricating diluted magnetic compounds with potential application in the field of spintronics. Room-temperature ferromagnetic V-doped LN with V contents of 1–3 at. % was prepared by ion-beam implantation. The samples exhibit a maximum atomic magnetic moment of 3.82 μB/V at a V doping concentration of 2 at. %. Structural characterization and first principle calculation suggest that the magnetism most likely arises from the oxygen vacancy around the V dopant. X-ray absorption near-edge spectroscopy reveals that the V atom principally substituted for the Nb atom in the LN lattice and that the V is octahedrally coordinated but with a large distortion. It also showed that oxygen vacancies are present in the third shell of the doped V atoms. With the aid of first-principle calculations, we constructed the electronic structure of this system and demonstrated that the O vacancies play an important role in modulating the magnet...