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Flexible thermoelectric devices with high optical transparency may enable new applications; however, the lack of a p-type counterpart has hitherto hindered its development. Yanget al., report a transparent p-type thermoelectric based on polycrystalline copper iodide thin film with record performance.

Conductive atomic force microscopy (CAFM) has become the preferred tool of many companies and academics to analyze the electronic properties of materials and devices at the nanoscale. This technique scans the surface of a sample using an ultrasharp conductive nanoprobe so that the contact area between them is very small (<100 nm 2 ) and it can measure the properties of the sample with a very high lateral resolution. However, measuring relatively low currents (∼1 nA) in such small areas produces high current densities (∼1000 A/cm 2 ), which almost always results in fast nanoprobe degradation. That is not only expensive but also endangers the reliability of the data collected because detecting which data sets are affected by tip degradation can be complex. Here, we show an inexpensive long-sought solution for this problem by using a current limitation system. We test its performance by measuring the tunneling current across a reference ultrathin dielectric when applying ramped voltage stresses at hundreds of randomly selected locations of its surface, and we conclude that the use of a current limitation system increases the lifetime of the tips by a factor of ∼50. Our work contributes to significantly enhance the reliability of one of the most important characterization techniques in the field of nanoelectronics.

Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductor industry 1,2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (more than 1 µm 2 ) devices on unfunctional SiO 2 -Si substrates. Some studies have integrated monolayer graphene on silicon microchips as a large-area (more than 500 µm 2 ) interconnection 3 and as a channel of large transistors (roughly 16.5 µm 2 ) (refs.  4,5 ), but in all cases the integration density was low, no computation was demonstrated and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here, we present the fabrication of high-integration-density 2D-CMOS hybrid microchips for memristive applications-CMOS stands for complementary metal-oxide-semiconductor. We transfer a sheet of multilayer hexagonal boron nitride onto the back-end-of-line interconnections of silicon microchips containing CMOS transistors of the 180 nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the hexagonal boron nitride memristors, which allows us to achieve endurances of roughly 5 million cycles in memristors as small as 0.053 µm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity signals that are suitable for the implementation of spiking neural networks. The high performance and the relatively-high technology readiness level achieved represent a notable advance towards the integration of 2D materials in microelectronic products and memristive applications., (© 2023. The Author(s).)

Conductive atomic force microscopy (CAFM) is a powerful technique to investigate electrical and mechanical properties of materials and devices at the nanoscale. However, its main challenge is the reliability of the probe tips and their interaction with the samples. The most common probe tips used in CAFM studies are made of Si coated with a thin (∼20 nm) film of Pt or Pt-rich alloys (such as Pt/Ir), but this can degrade fast due to high current densities (>10 2 A/cm 2 ) and mechanical frictions. Si tips coated with doped diamond and solid doped diamond tips are more durable, but they are significantly more expensive and their high stiffness often damages the surface of most samples. One growing alternative is to use solid Pt tips, which have an intermediate price and are expected to be more durable than metal-coated silicon tips. However, a thorough characterization of the performance of solid Pt probes for CAFM research has never been reported. In this article, we characterize the performance of solid Pt probes for nanoelectronics research by performing various types of experiments and compare them to Pt/Ir-coated Si probes. Our results indicate that solid Pt probes exhibit a lateral resolution that is very similar to that of Pt/Ir-coated Si probes but with the big advantage of a much longer lifetime. Moreover, the probe-to-probe deviation of the electrical data collected is small. The use of solid Pt probes can help researchers to enhance the reliability of their CAFM experiments.

A well-known method for measuring thermal conductivity is the 3-Omega (3 ω ) method. A prerequisite for it is the deposition of a metal heater on top of the sample surface. The known design rules for the heater geometry, however, are not yet sufficient. In this work, heaters with different lengths and widths within the known restrictions were investigated. The measurements were carried out on SiO 2 thin films with different film thicknesses as a reference. There was a significant difference between theoretical deposited heater width and real heater width, which could lead to errors of up to 50% for the determined thermal conductivity. Heaters with lengths between 11 and 13 mm and widths of 6.5 µm or more proved to deliver the most trustworthy results. To verify the performance of these newfound heaters, additional investigations on Al 2 O 3 thin films were carried out, proving our conclusions to be correct and delivering thermal conductivity values of 0.81 Wm -1 K -1 and 0.93 Wm -1 K -1 for unannealed and annealed samples, respectively. Furthermore, the effect of annealing on Al 2 O 3 was studied, revealing a significant shrinking in film thickness of approximately 11% and an increase in thermal conductivity of 15%. The presented results on well-defined geometries will help to produce optimized heater structures for the 3 ω method.

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms -1 . It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

In this work, we monitor in situ the movement of ZnO piezoelectric nanowires by using a conductive atomic force microscope integrated into a scanning electron microscope. This setup allows seeing the bending of the nanowires and simultaneously measuring the currents generated. We conclude that the currents generated not only come from piezoelectric effect, but also from contact potential and triboelectric effect. These contributions have been ignored in all previous reports in this field, meaning that the power conversion efficiency of these devices may have been systematically overestimated. Our study helps to clarify the working mechanism of piezoelectric nanogenerators based on ZnO nanowires.

: Conductive atomic force microscopy (CAFM) is one of the most powerful techniques in studying the electrical properties of various materials at the nanoscale. However, understanding current fluctuations within one study (due to degradation of the probe tips) and from one study to another (due to the use of probe tips with different characteristics), are still two major problems that may drive CAFM researchers to extract wrong conclusions. In this manuscript, these two issues are statistically analyzed by collecting experimental CAFM data and processing them using two different computational models. Our study indicates that: (i) before their complete degradation, CAFM tips show a stable state with degraded conductance, which is difficult to detect and it requires CAFM tip conductivity characterization before and after the CAFM experiments; and (ii) CAFM tips with low spring constants may unavoidably lead to the presence of a ~1.2 nm thick water film at the tip/sample junction, even if the maximum contact force allowed by the setup is applied. These two phenomena can easily drive CAFM users to overestimate the properties of the samples under test (e.g., oxide thickness). Our study can help researchers to better understand the current shifts that were observed during their CAFM experiments, as well as which probe tip to use and how it degrades. Ultimately, this work may contribute to enhancing the reliability of CAFM investigations., Competing Interests: The authors declare no conflict of interest.

For advanced atomic force microscopy (AFM) investigation of chemical surface modifications or very soft organic sample surfaces, the AFM probe tip needs to be operated in a liquid environment because any attractive or repulsive forces influenced by the measurement environment could obscure molecular forces. Due to fluid properties, the mechanical behavior of the AFM cantilever is influenced by the hydrodynamic drag force due to viscous friction with the liquid. This study provides a numerical model based on computational fluid dynamics (CFD) and investigates the hydrodynamic drag forces for different cantilever geometries and varying fluid conditions for Peakforce Tapping (PFT) in liquids. The developed model was verified by comparing the predicted values with published results of other researchers and the findings confirmed that drag force dependence on tip speed is essentially linear in nature. We observed that triangular cantilever geometry provides significant lower drag forces than rectangular geometry and that short cantilever offers reduced flow resistance. The influence of different liquids such as ultrapure water or an ethanol-water mixture as well as a temperature induced variation of the drag force could be demonstrated. The acting forces are lowest in ultrapure water, whereas with increasing ethanol concentrations the drag forces increase.

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.

The damage layer of a W (100) crystal irradiated with 120 eV hydrogen ions at a fluence of up to 1.5 × 10(25)/m(2) was investigated by scanning electron microscopy and conductive atomic force microscopy (CAFM). The periodic surface degeneration of the W crystal at a surface temperature of 373 K was formed at increasing hydrogen fluence. Observations by CCD camera and CAFM indicate the existence of ultrathin surface layers due to low-energy H irradiation. The W surface layer can contain a high density of nanometer-sized defects, resulting in the thermal instability of W atoms in the surface layer. Our findings suggest that the periodic surface degeneration of the W crystal can be ascribed to the lateral erosion of W surface layers falling off during the low-energy hydrogen irradiation. Our density functional theory calculations confirm the thermal instability of W atoms in the top layer, especially if H atoms are adsorbed on the surface.

We report the formation of wave-like structures and nanostructured fuzzes in the polycrystalline tungsten (W) irradiated with high-flux and low-energy helium (He) ions. From conductive atomic force microscope measurements, we have simultaneously obtained the surface topography and current emission images of the irradiated W materials. Our measurements show that He-enriched and nanostructured strips are formed in W crystal grains when they are exposed to low-energy and high-flux He ions at a temperature of 1400 K. The experimental measurements are confirmed by theoretical calculations, where He atoms in W crystal grains are found to cluster in a close-packed arrangement between {101} planes and form He-enriched strips. The formations of wave-like structures and nanostructured fuzzes on the W surface can be attributed to the surface sputtering and swelling of He-enriched strips, respectively.