1. Trace Analysis of Al on Silicon Surfaces by Ultra‐soft X‐Ray Emission Spectroscopy
- Author
-
G. Andermann, T. Scimeca, and C. H. Zhang
- Subjects
Total internal reflection ,Photon ,Silicon ,Chemistry ,Physics::Optics ,chemistry.chemical_element ,Atomic and Molecular Physics, and Optics ,Synchrotron ,Analytical Chemistry ,law.invention ,law ,Electron excitation ,Emission spectrum ,Atomic physics ,Soft X-ray emission spectroscopy ,Spectroscopy ,Excitation - Abstract
It is shown that near normal incidence, low‐energy electron excitation of Al on silicon surfaces by ultra‐soft X‐Ray emission spectroscopy yielded limits of detectibility (LD) in the picogram region. This result on L band emission via electron excitation is fully competitive with photon excitation using K‐α lines via grazing incidence total reflection techniques (TXRF). Surprisingly, it was also found that normal incidence synchrotron photon excitation on the same sample yielded much higher values of LD than low‐energy electron excitation, undoubtedly due to the use of a poor transmission grating used in the entrance optics.
- Published
- 2003