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A multilayered seed to be used for the electrochemical deposition (ECD) of Cu was investigated to develop narrow-pitched dual-damascene Cu interconnects for future ULSI devices. The seed of the thinner chemical vapor deposition (CVD)-Cu element and the thicker physical vapor deposition (PVD) element demonstrated better filling characteristics in high-aspect ratio vias.

A barrier layer of titanium nitride was used to protect the electrical properties of a ferroelectric compound against the effects of H2.

The composition of ferroelectric capacitors employing SrBi(sub 2)(Ta(sub 1-x)Nb(sub x))(sub 2)O(sub 9) (SBTN) were modified by varying Nb concentration from 0 to 1. The corresponding current-voltage and polarization-electric field electrical properties were investigated from room temperature to 145 deg C. Temperature investigations indicated that the leakage current will increase with larger Nb concentration and the dominant conduction mechanism changes from Schottky to Frenkel-Pole emission.

Contact angle measurement was used to evaluate the changes in adhesive energy at Cu/TiW interface resulting from increased Ti concentration in the TiW film. The adhesive energy between Cu and TiW was characterized as a function of the Ti concentration and evaluated through the application of the Young-Dupre equation to the contact angle of Cu particles to the TiW films. The findings show that increasing Ti concentration from 0 to 20 wt % produces around a 70% increase in the adhesive energy.

Ta penetration into a planar template-type porous low-k film during atomic layer deposition of TaN has been investigated by evaluating relations between Ta penetration and number of deposition cycles, exposure time of Ta precursor per deposition cycle, substrate temperature, and porosity of the porous low-k. The precursors were pentakisdimethylaminotantalum [PDMAT:Ta(N(CH3)2)5] and NH3. The porous low-k was a methylsiloxane (MSX) whose pore size in the maximum distribution and porosity of the porous low-k were 0–1.9 nm and 0%–47%. Depth profile of the Ta penetration was measured by transmission electron microscopy and energy dispersive x-ray spectroscopy. The amount of penetrated and the penetration depth depended on the porosity. It was found that the precursors penetrate into the MSX film dominantly by gas phase diffusion through pores connecting from the surface to the inside. Increased surface area of the MSX film due to the pores results in a depletion of precursor at the wafer edge, and that this depletion causes the penetration characteristics at the edge of wafer differ from those at the center of the wafer. Moreover, the thickness required for the pore sealing by additive liner deposition is discussed. [ABSTRACT FROM AUTHOR]

Deals with a study that reports on high temperature electrical characteristics of (Ta1-xNb1)2 ratios of ferroelectric solid solutions of chemicals. Details on the experiment; Results and discussions.

A Cu-metallization technology for fabricating peel-free fine-structure TiW/Cu/TiW interconnection lines uses infrared-assisted reactive ion etching to obtain fine structure Cu lines that have low electrical resistivity and high electro-migration resistance. MOS diodes and MOSFET's developed using these lines exhibit fine characteristics and are stable up to 700 degrees celsius annealing. The high resistivity exhibited by the TiW/Cu/TiW interconnection lines assumes importance while fabricating ULSI devices, and their C-V characteristics resemble those of Al lines.